摘要:
The positive photosensitive resin of the present invention has an acid-labile protecting group and the structure represented by the following general formula (1): (wherein X1 and X2 may be the sake or different and each independently a straight or branched chain hydrocarbon group, having 1 to 30 carbon atoms, an alicyclic hydrocarbon group or a heterocyclic group, which may substituted with straight or branched chain hydrocarbon of 1 to 6 carbon atoms or —O— hydrocarbon; Y1 and Y2 may be the same or different and are each independently a hydrogen atom, a straight or branched chain hydrocarbon group having 1 to 6 carbon atoms, a sulfur-containing hydrocarbon group, or an aromatic hydrocarbon group which may have a substituent; and two Zs may be the same or different and each independently an oxygen atom or a sulfur atom).
摘要:
The present invention provides a positive photosensitive resin and a resist composition containing the positive photosensitive resin, both of which are used for fine pattern formation in semiconductor production and are preferably used in a semiconductor lithography of higher-than-before sensitivity. The positive photosensitive resin of the present invention is a positive photosensitive resin having an acid-labile protecting group which is dissociatable by the action of an acid to allow the resin to have higher solubility in an alkaline developing solution, which resin having, in the high-molecular main chain, a structure represented by the following general formula (1): (wherein X1 and X2 may be the same or different and are each independently a straight chain or branched chain hydrocarbon group having 1 to 30 carbon atoms, an alicyclic hydrocarbon group, an aromatic hydrocarbon group or a heterocyclic group, and these groups may be substituted with straight chain or branched chain hydrocarbon of 1 to 6 carbon atoms or —O-hydrocarbon; Y1 and Y2 may be the same or different and are each independently a hydrogen atom, a straight chain or branched chain hydrocarbon group having 1 to 6 carbon atoms, a sulfur-containing hydrocarbon group, or an aromatic hydrocarbon group which may have a substituent; and two Zs may be the same or different and are each independently an oxygen atom or a sulfur atom).
摘要:
To provide a novel ABA-type triblock copolymer of vinyl ether series, comprising polyvinyl ether and an oxystyrene-series unit, and a process of producing the ABA-type copolymer at a series of steps. The invention relates to a novel ABA-type triblock copolymer comprising Segment A comprising an oxystyrene-series repeat unit (a) and Segment B comprising a vinyl ether-series repeat unit (b), in which the Segment A and the Segment B are bonded together with a single bond, and to a simple process of producing the same. The triblock copolymer can be produced at a series of steps in a simple manner, comprising living cationic polymerization of a vinyl ether-series monomer such as ethyl vinyl ether in the presence of a bifunctional initiator and a Lewis acid, and subsequently adding an oxystyrene-series monomer such as p-hydroxystyrene for living cationic polymerization.
摘要:
To provide a novel ABA-type triblock copolymer of vinyl ether series, comprising polyvinyl ether and an oxystyrene-series unit, and a process of producing the ABA-type copolymer at a series of steps. The invention relates to a novel ABA-type triblock copolymer comprising Segment A comprising an oxystyrene-series repeat unit (a) and Segment B comprising a vinyl ether-series repeat unit (b), in which the Segment A and the Segment B are bonded together with a single bond, and to a simple process of producing the same. The triblock copolymer can be produced at a series of steps in a simple manner, comprising living cationic polymerization of a vinyl ether-series monomer such as ethyl vinyl ether in the presence of a bifunctional initiator and a Lewis acid, and subsequently adding an oxystyrene-series monomer such as p-hydroxystyrene for living cationic polymerization.