公开(公告)号：US20060006541A1

公开(公告)日：2006-01-12

申请号：US11176622

申请日：2005-07-08

申请人： Hajime Tsuchiya ,  Hiromi Egawa ,  Terukazu Kokubo ,  Atsushi Shiota

发明人： Hajime Tsuchiya ,  Hiromi Egawa ,  Terukazu Kokubo ,  Atsushi Shiota

IPC分类号： H01B3/20 ,  H01L23/48 ,  H01L21/31

CPC分类号： H01L21/3122 ,  C09D183/04 ,  C09D183/14 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/02348 ,  Y10T428/31663

摘要： A method of forming an organic silica-based film, including: applying a composition for forming an insulating film for a semiconductor device, which is cured by using heat and ultraviolet radiation, to a substrate to form a coating; heating the coating; and applying heat and ultraviolet radiation to the coating to effect a curing treatment, wherein the composition includes organic silica sol having a carbon content of 11.8 to 16.7 mol %, and an organic solvent, the organic silica sol being a hydrolysis-condensation product produced by hydrolysis and condensation of a silane compound selected from compounds shown by the general formulae (1): R1Si(OR2)3, (2): Si(OR3)4, (3): (R4)2Si(OR5)2, and (4): R6b(R7O)3-bSi—(R10)d—Si(OR8)3-cR9c.

摘要翻译： 一种形成有机二氧化硅基膜的方法，包括：将通过使用热和紫外线辐射固化的用于形成用于半导体器件的绝缘膜的组合物施加到基底以形成涂层; 加热涂层; 并对涂层施加热和紫外线辐射以进行固化处理，其中所述组合物包含碳含量为11.8至16.7mol％的有机硅溶胶和有机溶剂，所述有机二氧化硅溶胶为水解缩合产物，其由 选自通式（1）所示的化合物的硅烷化合物的水解和缩合：R 1 Si（OR 2）3，（ 2）：Si（OR 3）4，（3）：（R 4）2 Si（或 （4）：R 6 B 7（R 7） O）3-b Si-（R 10）n -Si（OR 8）3 -c 9

公开(公告)号：US07932295B2

公开(公告)日：2011-04-26

申请号：US12135594

申请日：2008-06-09

申请人： Hajime Tsuchiya ,  Hiromi Egawa ,  Terukazu Kokubo ,  Atsushi Shiota

发明人： Hajime Tsuchiya ,  Hiromi Egawa ,  Terukazu Kokubo ,  Atsushi Shiota

IPC分类号： C01B33/155 ,  C09K3/00 ,  H01L23/535 ,  H01L23/538

CPC分类号： H01L21/3122 ,  C09D183/04 ,  C09D183/14 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/02348 ,  Y10T428/31663

摘要： A method of forming an organic silica-based film, including: applying a composition for forming an insulating film for a semiconductor device, which is cured by using heat and ultraviolet radiation, to a substrate to form a coating; heating the coating; and applying heat and ultraviolet radiation to the coating to effect a curing treatment, wherein the composition includes organic silica sol having a carbon content of 11.8 to 16.7 mol %, and an organic solvent, the organic silica sol being a hydrolysis-condensation product produced by hydrolysis and condensation of a silane compound selected from compounds shown by the general formulae (1): R1Si(OR2)3, (2): Si(OR3)4, (3): (R4)2Si(OR5)2, and (4): R6b(R7O)3-bSi—(R10)d—Si(OR8)3-cR9c.

摘要翻译： 一种形成有机二氧化硅基膜的方法，包括：将通过使用热和紫外线辐射固化的用于形成用于半导体器件的绝缘膜的组合物施加到基底以形成涂层; 加热涂层; 并对涂层施加热和紫外线辐射以进行固化处理，其中所述组合物包含碳含量为11.8至16.7mol％的有机硅溶胶和有机溶剂，所述有机二氧化硅溶胶为水解缩合产物，其由 硅烷化合物的水解和缩合选自通式（1）所示的化合物：R1Si（OR2）3，（2）：Si（OR3）4，（3）：（R4）2Si（OR5）2和（ 4）：R6b（R7O）3-bSi-（R10）d-Si（OR8）3-cR9c。

公开(公告)号：US20080246153A1

公开(公告)日：2008-10-09

申请号：US12135594

申请日：2008-06-09

申请人： Hajime TSUCHIYA ,  Hiromi Egawa ,  Terukazu Kokubo ,  Atsushi Shiota

发明人： Hajime TSUCHIYA ,  Hiromi Egawa ,  Terukazu Kokubo ,  Atsushi Shiota

IPC分类号： H01L23/52 ,  B32B9/00 ,  C09D4/00

CPC分类号： H01L21/3122 ,  C09D183/04 ,  C09D183/14 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/02348 ,  Y10T428/31663

摘要： A method of forming an organic silica-based film, including: applying a composition for forming an insulating film for a semiconductor device, which is cured by using heat and ultraviolet radiation, to a substrate to form a coating; heating the coating; and applying heat and ultraviolet radiation to the coating to effect a curing treatment, wherein the composition includes organic silica sol having a carbon content of 11.8 to 16.7 mol %, and an organic solvent, the organic silica sol being a hydrolysis-condensation product produced by hydrolysis and condensation of a silane compound selected from compounds shown by the general formulae (1): R1Si(OR2)3, (2): Si(OR3)4, (3): (R4)2Si(OR5)2, and (4): R6b(R7O)3-bSi—(R10)d—Si(OR8)3-cR9c.

摘要翻译： 一种形成有机二氧化硅基膜的方法，包括：将通过使用热和紫外线辐射固化的用于形成用于半导体器件的绝缘膜的组合物施加到基底以形成涂层; 加热涂层; 并对涂层施加热和紫外线辐射以进行固化处理，其中所述组合物包含碳含量为11.8至16.7mol％的有机硅溶胶和有机溶剂，所述有机二氧化硅溶胶为水解缩合产物，其由 选自通式（1）所示的化合物的硅烷化合物的水解和缩合：R 1 Si（OR 2）3，（ 2）：Si（OR 3）4，（3）：（R 4）2 Si（或 （4）：R 6 B 7（R 7） O）3-b Si-（R 10）n -Si（OR 8）3 -c 9

公开(公告)号：US07399715B2

公开(公告)日：2008-07-15

申请号：US11176622

申请日：2005-07-08

申请人： Hajime Tsuchiya ,  Hiromi Egawa ,  Terukazu Kokubo ,  Atsushi Shiota

发明人： Hajime Tsuchiya ,  Hiromi Egawa ,  Terukazu Kokubo ,  Atsushi Shiota

IPC分类号： H01L21/31

CPC分类号： H01L21/3122 ,  C09D183/04 ,  C09D183/14 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/02348 ,  Y10T428/31663

摘要： A method of forming an organic silica-based film, including: applying a composition for forming an insulating film for a semiconductor device, which is cured by using heat and ultraviolet radiation, to a substrate to form a coating; heating the coating; and applying heat and ultraviolet radiation to the coating to effect a curing treatment, wherein the composition includes organic silica sol having a carbon content of 11.8 to 16.7 mol %, and an organic solvent, the organic silica sol being a hydrolysis-condensation product produced by hydrolysis and condensation of a silane compound selected from compounds shown by the general formulae (1): R1Si(OR2)3, (2): Si(OR3)4, (3): (R4)2Si(OR5)2, and (4): R6b(R7O)3-bSi—(R10)d—Si(OR8)3-cR9c.

摘要翻译： 一种形成有机二氧化硅基膜的方法，包括：将通过使用热和紫外线辐射固化的用于形成用于半导体器件的绝缘膜的组合物施加到基底以形成涂层; 加热涂层; 并对涂层施加热和紫外线辐射以进行固化处理，其中所述组合物包含碳含量为11.8至16.7mol％的有机硅溶胶和有机溶剂，所述有机二氧化硅溶胶为水解缩合产物，其由 选自通式（1）所示的化合物的硅烷化合物的水解和缩合：R 1 Si（OR 2）3，（ 2）：Si（OR 3）4，（3）：（R 4）2 Si（或 （4）：R 6 B 7（R 7） O）3-b Si-（R 10）n -Si（OR 8）3 -c 9

公开(公告)号：US20060223001A1

公开(公告)日：2006-10-05

申请号：US11387711

申请日：2006-03-24

申请人： Isao Nishimura ,  Hiromi Egawa ,  Norihiko Sugie ,  Norihiro Natsume ,  Junichi Takahashi

发明人： Isao Nishimura ,  Hiromi Egawa ,  Norihiko Sugie ,  Norihiro Natsume ,  Junichi Takahashi

IPC分类号： G03C1/00

CPC分类号： G03F7/0757 ,  G03F7/0045 ,  G03F7/0046

摘要： A radiation-sensitive resin composition useful as a chemically amplified resist excelling particularly in depth of focus (DOF) and capability of substantially decreasing development defects, while maintaining excellent basic performance as a resist is provided. The radiation-sensitive resin composition comprises (A) a siloxane resin containing an acid-dissociable group and (B) a photoacid generator, wherein when a coating formed from the radiation-sensitive resin composition is exposed to radiation and heated, the contact angle (α) with water in an unexposed area and the contact angle (β) with water in an exposed area satisfy an inequality formula of (α−β)>5. The component (A) is preferably a compound having a structural unit (I) shown by the following formula (I) and a structural unit (II) shown by the following formula (II), wherein A represents a substituted or unsubstituted divalent cyclic hydrocarbon group, R1 represents a monovalent acid-dissociable group, X represents a single bond or a substituted or unsubstituted divalent hydrocarbon group, Y represents a single bond or a divalent coupling means, and Z represents a single bond or a substituted or unsubstituted divalent hydrocarbon group.

摘要翻译： 提供了用作化学放大抗蚀剂的辐射敏感性树脂组合物，其具有特别优异的焦深（DOF）和显着减少显影缺陷的能力，同时保持了作为抗蚀剂的优异的基本性能。 该辐射敏感性树脂组合物包含（A）含有酸解离基团的硅氧烷树脂和（B）光致酸产生剂，其中当将由该辐射敏感性树脂组合物形成的涂层暴露于辐射并加热时，其接触角 α）与暴露区域中的水的接触角（β）满足不等式（α-β）> 5。 组分（A）优选是具有由下式（I）表示的结构单元（I）的化合物和由下式（II）表示的结构单元（II），其中A表示取代或未取代的二价环状烃 基团R 1表示一价酸解离基团，X表示单键或取代或未取代的二价烃基，Y表示单键或二价键合方式，Z表示单键 或取代或未取代的二价烃基。

公开(公告)号：US4818806A

公开(公告)日：1989-04-04

申请号：US93143

申请日：1987-09-02

申请人： Kouichi Kunimune ,  Yoshiya Kutsuzawa ,  Hiromi Egawa ,  Shiro Konotsune

发明人： Kouichi Kunimune ,  Yoshiya Kutsuzawa ,  Hiromi Egawa ,  Shiro Konotsune

IPC分类号： C08G73/00 ,  C08G73/10 ,  C08G77/455 ,  C08G77/04

CPC分类号： C08G73/1085 ,  C08G73/106 ,  C08G77/455

摘要： A process for producing a silicon-containing polyamic acid of a specified inherent viscosity as a precursor affording polyimide resins having a considerable extent of heat resistance as adhesives or resins for multilayer laminated composite materials, and a good adhesion onto inorganic materials, metals or resins, and a crosslinked silicon-containing polyimide resin prepared from the polyamic acid are provided, which process comprises reacting a tetracarboxylic acid dianhydride of formula (1) (A mols), a diamine of formula (2) (B mols) and an aminosilicon compound of formula (3) (C mols), satisfying the expressions of (4) and (5): ##STR1## wherein R.sup.1 is a tetravalent carboxylic aromatic group; R.sup.2 is an aliphatic, alicyclic, aromatic aliphatic or carboyclic aromatic group each of a specified number of carbon atoms, a specified polysiloxane group, or a formula of ##STR2## wherein R.sup.8 is a specified hydrocarbon group or hydrogen atom; ##STR3## (s: 1 to 4); R.sup.4 is alkyl, phenyl or alkyl-substituted phenyl each of a specified number of carbon atoms; X is alkoxy, acetoxy or halogen; and 1.ltoreq.k.ltoreq.3, and which polyimide resin is produced by baking a solution containing the above polyamic acid at 50.degree. to 450.degree. C.

摘要翻译： 制备具有特定的特性粘度的含硅聚酰胺酸作为前体的方法，其提供具有相当程度耐热性的聚酰亚胺树脂作为多层层压复合材料的粘合剂或树脂，以及对无机材料，金属或树脂的良好粘附性， 和由聚酰胺酸制备的交联的含硅聚酰亚胺树脂，该方法包括使式（1）的四羧酸二酐（A摩尔），式（2）的二胺（B摩尔）和氨基硅化合物 （3）（3）（3）（3）（3）（3）（3）（3）（IMA） ）其中R1是四价羧酸芳族基团; R2是指定数量的碳原子的脂肪族，脂环族，芳香族脂肪族或碳环芳香族基团，特定的聚硅氧烷基团，或者其中R8是特定的烃基或氢原子的式 + TR （s：1至4）; R4是烷基，苯基或烷基取代的苯基，各自具有特定数目的碳原子; X是烷氧基，乙酰氧基或卤素; 和1