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公开(公告)号：US4556553A
公开(公告)日：1985-12-03
申请号：US499447
申请日：1983-05-31
IPC分类号： A61K8/00 , A61K8/21 , A61K8/26 , A61K8/34 , A61K8/73 , A61Q11/00 , B65D35/02 , A61K7/16 , A61K7/18
摘要： A plastics container having oxygen permeability of 3 cc/m.sup.2.day.atm or more is filled with an antiseptic toothpaste composition comprising an aluminum oxide compound such as aluminum oxide trihydrate as a main abrasive and a polyhydric alcohol such as propylene glycol, sorbitol, etc. in an amount of 5 to 100 moles in fluoride-free systems or 4.0 to 100 moles in fluoride-containing systems per liter of water in the toothpaste composition.
摘要翻译： 氧透过度为3cc / m2.day.atm以上的塑料容器装有防氧化牙膏组合物，其包含氧化铝化合物如氧化铝三水合物作为主要研磨剂，多元醇如丙二醇，山梨醇等 在无氟系统中为5至100摩尔，或者在牙膏组合物中每升水中含有4.0至100摩尔含氟化物体系。
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公开(公告)号：US07868385B2
公开(公告)日：2011-01-11
申请号：US11072268
申请日：2005-03-07
申请人： Hiromichi Ichikawa
发明人： Hiromichi Ichikawa
IPC分类号： H01L29/76 , H01L29/94 , H01L31/062 , H01L31/113 , H01L31/119
CPC分类号： H01L29/0847 , H01L21/823814 , H01L27/0623 , H01L27/0922 , H01L29/0696 , H01L29/42368 , H01L29/66659 , H01L29/7835
摘要： A semiconductor device is disclosed that is capable of improving the drain breakdown voltage during operation. The semiconductor device includes a first drain region that is arranged to extend from the vicinity of an end portion of the gate electrode at the drain electrode side in a direction toward the drain electrode, a drain contact region that is formed within the first drain region and comes into contact with the drain electrode, and a second drain region that is formed around and underneath the drain contact region. The second drain contact region has an impurity concentration that is higher than the impurity concentration of the first drain contact region and lower than the impurity concentration of the drain contact region. An end portion of the second drain region at the gate electrode side is positioned away from the end portion of the gate electrode by a predetermined distance.
摘要翻译： 公开了能够改善工作时的漏极击穿电压的半导体器件。 半导体器件包括：第一漏极区，其被布置成在漏极电极侧的栅电极的端部附近沿着漏极电极的方向延伸;漏极接触区域，形成在第一漏极区域内;以及 与漏极接触，以及形成在漏极接触区域周围和下方的第二漏极区域。 第二漏极接触区域的杂质浓度高于第一漏极接触区域的杂质浓度，并且低于漏极接触区域的杂质浓度。 栅电极侧的第二漏极区域的端部远离栅电极的端部远离预定距离。
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公开(公告)号：US20060081924A1
公开(公告)日：2006-04-20
申请号：US11072268
申请日：2005-03-07
申请人： Hiromichi Ichikawa
发明人： Hiromichi Ichikawa
IPC分类号： H01L29/76
CPC分类号： H01L29/0847 , H01L21/823814 , H01L27/0623 , H01L27/0922 , H01L29/0696 , H01L29/42368 , H01L29/66659 , H01L29/7835
摘要： A semiconductor device is disclosed that is capable of improving the drain breakdown voltage during operation. The semiconductor device includes a first drain region that is arranged to extend from the vicinity of an end portion of the gate electrode at the drain electrode side in a direction toward the drain electrode, a drain contact region that is formed within the first drain region and comes into contact with the drain electrode, and a second drain region that is formed around and underneath the drain contact region. The second drain contact region has an impurity concentration that is higher than the impurity concentration of the first drain contact region and lower than the impurity concentration of the drain contact region. An end portion of the second drain region at the gate electrode side is positioned away from the end portion of the gate electrode by a predetermined distance.
摘要翻译： 公开了能够改善工作时的漏极击穿电压的半导体器件。 半导体器件包括：第一漏极区，其被布置成在漏极电极侧的栅电极的端部附近沿着漏极电极的方向延伸;漏极接触区域，形成在第一漏极区域内;以及 与漏极接触，以及形成在漏极接触区域周围和下方的第二漏极区域。 第二漏极接触区域的杂质浓度高于第一漏极接触区域的杂质浓度，并且低于漏极接触区域的杂质浓度。 栅电极侧的第二漏极区域的端部远离栅电极的端部远离预定距离。
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公开(公告)号：US4576816A
公开(公告)日：1986-03-18
申请号：US407901
申请日：1982-08-13
摘要： A dentifrice composition is disclosed which comprises 100-100,000 units per gram of the composition of dextranase and 20-90% by weight of the composition of an aluminum oxide compound having the formula:Al.sub.2 O.sub.3.nH.sub.2 Owherein n.gtoreq.0, with an average particle size of 1-50 microns as a main abrasive. Dextranase is maintained stable in the dentifrice composition and the composition itself is stable, subject to minimal aging discoloration.
摘要翻译： 公开了一种洁齿剂组合物，其包含每克组合物为100-100,000单位的葡聚糖酶和20-90重量％组合物的具有下式的氧化铝化合物：Al 2 O 3·nH 2 O，其中n≥0，平均值 粒度为1-50微米的主要研磨剂。 糊精酶在洁牙剂组合物中保持稳定，并且组合物本身是稳定的，经历最小的老化变色。
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公开(公告)号：US4612189A
公开(公告)日：1986-09-16
申请号：US372005
申请日：1982-04-26
CPC分类号： A61Q11/00 , A61K8/25 , A61K2800/262
摘要： Transparent and translucent dentifrice compositions improved in cleaning ability, stain removing ability and feeling are disclosed which comprise a mixture of an amorphous silica and an amorphous silicate containing at least 70% by weight of SiO.sub.2 which is partially inter-bonded with 1-10% by weight of an oxide of a metal selected from the group consisting of aluminum, magnesium and calcium and a transparent vehicle having substantially the same refractive index as that of the silica, the ratio of the silica to the silicate being in the range of 4:6 to 6:4 on a weight basis, the content of said mixture being in the range of 1 to 25% by weight of the composition, and the pH of the composition being in the range of 4.5 to 10.
摘要翻译： 公开了透明和半透明的洁牙剂组合物，其清洁能力，除斑能力和感觉都提高了，其包含无定形二氧化硅和含有至少70重量％SiO 2的无定形硅酸盐的混合物，其与1-10％部分互连， 选自铝，镁和钙的金属的氧化物的重量和具有与二氧化硅基本相同的折射率的透明载体，二氧化硅与硅酸盐的比例在4:6的范围内 至6：4，所述混合物的含量在组合物的1至25重量％的范围内，组合物的pH在4.5至10的范围内。
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公开(公告)号：US4466954A
公开(公告)日：1984-08-21
申请号：US427542
申请日：1982-09-29
申请人： Hiromichi Ichikawa , Kazuo Saso , Nobuo Suganuma
发明人： Hiromichi Ichikawa , Kazuo Saso , Nobuo Suganuma
CPC分类号： C12N9/96 , A61K8/463 , A61K8/66 , A61Q11/00 , C12N9/2454
摘要： A stable dextranase-containing oral composition having a good feeling upon use is disclosed which comprises a dextranase enzyme produced by the genus Chaetomium, one of fungi, and a stabilizing amount of an admixture comprising water-soluble salts of alkyl sulfates having 10, 12, 14, and 16 carbon atoms in the alkyl chain in the following proportion:______________________________________ C.sub.10 --alkyl sulfate salt 0-20%, C.sub.12 --alkyl sulfate salt 50-80%, C.sub.14 --alkyl sulfate salt 10-30%, and C.sub.16 --alkyl sulfate salt 0-15%, ______________________________________ based on the weight of the admixture.
摘要翻译： 本发明公开了一种具有良好使用感的稳定的含葡聚糖酶的口腔用组合物，其包含由毛壳菌属（Chaetomium），真菌之一和稳定量的包含具有10,12， 烷基链中的14个和16个碳原子以下列比例：-C 10 - 烷基硫酸盐0-20％，-C 12 - 烷基硫酸盐50-80％，-C 14烷基硫酸盐10-30％ C16烷基硫酸盐0-15％， - 基于混合物的重量。
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公开(公告)号：US20110076821A1
公开(公告)日：2011-03-31
申请号：US12963270
申请日：2010-12-08
申请人： Hiromichi Ichikawa
发明人： Hiromichi Ichikawa
IPC分类号： H01L21/336
CPC分类号： H01L29/0847 , H01L21/823814 , H01L27/0623 , H01L27/0922 , H01L29/0696 , H01L29/42368 , H01L29/66659 , H01L29/7835
摘要： A method of manufacturing a semiconductor device, includes forming a gate insulating film and a gate electrode on a semiconductor substrate of a first conductivity type; forming a first drain region by implanting at a first predetermined dosage a first impurity of a second conductivity type corresponding to an opposite conductivity type with respect to the first conductivity type at a region of the semiconductor substrate in the vicinity of an end portion of the gate electrode; forming a second drain region substantially within the first drain region by implanting a second impurity of the second conductivity type at a second dosage that is greater than the first dosage; and forming a drain contact region within the second drain region by implanting a third impurity of the second conductivity type at a third dosage that is greater than the second dosage.
摘要翻译： 一种制造半导体器件的方法，包括在第一导电类型的半导体衬底上形成栅极绝缘膜和栅电极; 通过以第一预定剂量注入第二导电类型的第一杂质，形成第一漏区，所述第二杂质与所述半导体衬底的所述栅极端部附近的区域相对于所述第一导电类型对应于相反导电类型 电极; 通过以大于所述第一剂量的第二剂量注入所述第二导电类型的第二杂质，形成基本上在所述第一漏区范围内的第二漏区; 以及通过以大于所述第二剂量的第三剂量注入所述第二导电类型的第三杂质，在所述第二漏区内形成漏极接触区域。
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公开(公告)号：US4581228A
公开(公告)日：1986-04-08
申请号：US316400
申请日：1981-10-29
IPC分类号： A61K8/00 , A61K8/21 , A61K8/26 , A61K8/34 , A61K8/73 , A61Q11/00 , B65D35/02 , A61K7/16 , A61K7/18
摘要： A plastic container is filled with an antiseptic toothpaste composition comprising an aluminum oxide compound such as aluminum oxide trihydrate as a main abrasive and a polyhydric alcohol such as propylene glycol, sorbitol, etc. in an amount of 5 to 100 moles in fluoride-free systems or 4.0 to 100 moles in fluoride-containing systems per liter of water in the toothpaste composition.
摘要翻译： 塑料容器中填充有防腐牙膏组合物，其包含氧化铝化合物如氧化铝三水合物作为主要研磨剂，多元醇如丙二醇，山梨糖醇等，在无氟体系中为5-100摩尔 或在牙膏组合物中每升水中含氟化物体系中为4.0至100摩尔。
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9.发明授权Manufacturing method of semiconductor device with increased drain breakdown voltage 有权具有增加的漏极击穿电压的半导体器件的制造方法公开(公告)号：US08298898B2
公开(公告)日：2012-10-30
申请号：US12963270
申请日：2010-12-08
申请人： Hiromichi Ichikawa
发明人： Hiromichi Ichikawa
IPC分类号： H01L21/336
CPC分类号： H01L29/0847 , H01L21/823814 , H01L27/0623 , H01L27/0922 , H01L29/0696 , H01L29/42368 , H01L29/66659 , H01L29/7835
摘要： A method of manufacturing a semiconductor device, includes forming a gate insulating film and a gate electrode on a semiconductor substrate of a first conductivity type; forming a first drain region by implanting at a first predetermined dosage a first impurity of a second conductivity type corresponding to an opposite conductivity type with respect to the first conductivity type at a region of the semiconductor substrate in the vicinity of an end portion of the gate electrode; forming a second drain region substantially within the first drain region by implanting a second impurity of the second conductivity type at a second dosage that is greater than the first dosage; and forming a drain contact region within the second drain region by implanting a third impurity of the second conductivity type at a third dosage that is greater than the second dosage.
摘要翻译： 一种制造半导体器件的方法，包括在第一导电类型的半导体衬底上形成栅极绝缘膜和栅电极; 通过以第一预定剂量注入第二导电类型的第一杂质，形成第一漏区，所述第二杂质与所述半导体衬底的所述栅极端部附近的区域相对于所述第一导电类型对应于相反导电类型 电极; 通过以大于所述第一剂量的第二剂量注入所述第二导电类型的第二杂质，形成基本上在所述第一漏区范围内的第二漏区; 以及通过以大于所述第二剂量的第三剂量注入所述第二导电类型的第三杂质，在所述第二漏区内形成漏极接触区域。
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