Silicon wafer, and heat treatment method of the same and the heat-treated silicon wafer
    1.
    发明授权
    Silicon wafer, and heat treatment method of the same and the heat-treated silicon wafer 有权
    硅晶片及其热处理方法和热处理硅晶片

    公开(公告)号:US06428619B1

    公开(公告)日:2002-08-06

    申请号:US09694163

    申请日:2000-10-23

    IPC分类号: C30B2502

    摘要: A method of heat-treating a silicon wafer has the steps of: preparing a silicon wafer having an oxygen concentration of 1.2×1018 atoms/cm3 or less (old ASTM) without generating crystal originated particles(COP'S) and interstitial-type large dislocation(L/D); forming a polysilicon layer of 0.1 &mgr;m to 1.6 &mgr;m in thickness on a back of the silicon wafer by a chemical-vapor deposition at a temperature of 670° C.±30° C.; and heat-treating the silicon wafer having the polysilicon layer in an oxygen atmosphere at 1000° C.±30° C. for 2 to 5 hours and subsequently at 1130° C.±30° C. for 1 to 16 hours. In this method, the silicon wafer before the formation of the polysilicon layer thereon is the type of a wafer in which oxidation induced stacking faults(OSF's) manifest itself at a center of the wafer when the wafer is subjected to the heat-treatment. Accordingly, the resulting silicon wafer with a polysilicon layer is of OSF fee and COP free, even when the wafer is subjected to the conventional OSF-manifesting heat treatment. The wafer with the polysilicon layer exerts a uniform gettering effect between the peripheral edge and center of the silicon wafer as a result of a uniform oxygen precipitation occurred at the entire surface of the silicon wafer.

    摘要翻译: 硅晶片的热处理方法具有以下步骤:制备氧浓度为1.2×1018原子/ cm3以下(旧ASTM)的硅晶片,不产生晶体起始粒子(COP'S)和间隙型大位错(L / D); 通过在670℃±30℃的温度下的化学气相沉积在硅晶片的背面上形成厚度为0.1μm至1.6μm的多晶硅层。 在氧气氛中,在1000℃±30℃下,将具有多晶硅层的硅晶片热处理2〜5小时,然后在1130℃±30℃下热处理1〜16小时。 在该方法中,在其上形成多晶硅层之前的硅晶片是当晶片进行热处理时,氧化诱导堆垛层错(OSF)在晶片的中心处显现的晶片的类型。 因此,即使当经过常规的OSF显示热处理时,所得到的具有多晶硅层的硅晶片也具有OSF费用和COP。 具有多晶硅层的晶片在硅晶片的整个表面上发生均匀的氧沉淀的结果,在硅晶片的外围边缘和中心之间施加均匀的吸气效应。

    Silicon wafer, and heat treatment method of the same and the heat-treated silicon wafer
    2.
    发明授权
    Silicon wafer, and heat treatment method of the same and the heat-treated silicon wafer 有权
    硅晶片及其热处理方法和热处理硅晶片

    公开(公告)号:US06682597B2

    公开(公告)日:2004-01-27

    申请号:US10162012

    申请日:2002-06-03

    IPC分类号: C30B2814

    CPC分类号: C30B15/203 C30B29/06

    摘要: A method of heat-treating a silicon wafer has the steps of: preparing a silicon wafer having an oxygen concentration of 1.2×1018 atoms/cm3 or less (old ASTM) without generating crystal originated particles(COP'S) and interstitial-type large dislocation(L/D); forming a polysilicon layer of 0.1 &mgr;m to 1.6 &mgr;m in thickness on a back of the silicon wafer by a chemical-vapor deposition at a temperature of 670° C.±30° C.; and heat-treating the silicon wafer having the polysilicon layer in an oxygen atmosphere at 1000° C.±30° C. for 2 to 5 hours and subsequently at 1130° C.±30° C. for 1 to 16 hours. In this method, the silicon wafer before the formation of the polysilicon layer thereon is the type of a wafer in which oxidation induced stacking faults(OSF's) manifest itself at a center of the wafer when the wafer is subjected to the heat-treatment. Accordingly, the resulting silicon wafer with a polysilicon layer is of OSF fee and COP free, even when the wafer is subjected to the conventional OSF-manifesting heat treatment. The wafer with the polysilicon layer exerts a uniform gettering effect between the peripheral edge and center of the silicon wafer as a result of a uniform oxygen precipitation occurred at the entire surface of the silicon wafer.

    摘要翻译: 硅晶片的热处理方法具有以下步骤:制备氧浓度为1.2×10 18原子/ cm 3或更低(旧ASTM)的硅晶片,而不产生晶体起始颗粒(COP'S)和间隙 型大位错(L / D); 通过在670℃±30℃的温度下的化学气相沉积在硅晶片的背面上形成厚度为0.1μm至1.6μm的多晶硅层。 在氧气氛下,在1000℃±30℃下,将具有多晶硅层的硅晶片热处理2〜5小时,然后在1130℃±30℃下热处理1〜16小时。 在该方法中,在其上形成多晶硅层之前的硅晶片是当晶片进行热处理时,氧化诱导堆垛层错(OSF)在晶片的中心处显现的晶片的类型。 因此,即使当经过常规的OSF显示热处理时,所得到的具有多晶硅层的硅晶片也具有OSF费用和COP。 具有多晶硅层的晶片在硅晶片的整个表面上发生均匀的氧沉淀的结果,在硅晶片的外围边缘和中心之间施加均匀的吸气效应。