公开(公告)号：US20100190282A1

公开(公告)日：2010-07-29

申请号：US12469755

申请日：2009-05-21

申请人： Yasuaki Yoshida ,  Hitoshi Sakuma

发明人： Yasuaki Yoshida ,  Hitoshi Sakuma

IPC分类号： H01L21/00

CPC分类号： H01S5/4043 ,  B82Y20/00 ,  H01S5/0202 ,  H01S5/02272 ,  H01S5/34313 ,  H01S5/34326 ,  H01S5/34333 ,  H01S5/4087 ,  H01S2304/04

摘要： A method for manufacturing a multiple-wavelength semiconductor laser comprises: forming a first bar having an array of first semiconductor chips, wherein at least two semiconductor lasers producing light of different wavelengths are monolithically formed; forming a second bar having an array of second semiconductor chips, wherein a semiconductor laser producing light having a different wavelength from the light produced by the semiconductor lasers of the first semiconductor chips is formed; forming a third bar by locating a laser-forming surface of said first bar facing a back surface of the second bar, and joining respective first semiconductor chips in the first bar to respective second semiconductor chips in the second bar; forming scribe lines by irradiating boundaries of the first semiconductor chips and boundaries of the second semiconductor chips with laser beams, and dividing the third bar along the scribe lines into respective chips.

摘要翻译： 一种制造多波长半导体激光器的方法包括：形成具有第一半导体芯片阵列的第一条，其中产生不同波长的光的至少两个半导体激光器是单片形成的; 形成具有第二半导体芯片阵列的第二条形状，其中形成具有与由第一半导体芯片的半导体激光器产生的光不同波长的光的半导体激光器; 通过将所述第一杆的激光形成表面定位成朝向所述第二杆的后表面，并将所述第一杆中的相应的第一半导体芯片连接到所述第二杆中的相应的第二半导体芯片来形成第三棒; 通过用激光束照射第一半导体芯片的边界和第二半导体芯片的边界来形成划线，并且沿着划线将第三条线划分成各自的芯片。

公开(公告)号：US07555026B2

公开(公告)日：2009-06-30

申请号：US11934174

申请日：2007-11-02

申请人： Yasuaki Yoshida

发明人： Yasuaki Yoshida

IPC分类号： H01S5/00

CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01S3/22 ,  H01S5/028 ,  H01S5/0283 ,  H01S5/0287

摘要： A semiconductor laser device includes a cavity extending in a propagation direction of a laser beam (X-direction). A front facet is on one end of the cavity through which the laser beam is emitted. A rear facet is on the other end of the cavity. An anodic oxide film is provided on at least one of the front facet and the rear facet, and the anodic oxide film preferably has a thickness of λ/4n or an odd integer multiple thereof, where λ is the wavelength of the laser beam and n is the refractive index of the anodic oxide film.

摘要翻译： 半导体激光装置包括沿激光束（X方向）的传播方向延伸的空腔。 前面是在空腔的一端，激光束通过该端面发射。 后面是在腔的另一端。 阳极氧化膜设置在前面和后面的至少一个上，阳极氧化膜优选具有λ/ 4n的厚度或其奇数整数倍，其中λ是激光束的波长，n是 是阳极氧化膜的折射率。

公开(公告)号：US20080310473A1

公开(公告)日：2008-12-18

申请号：US12179627

申请日：2008-07-25

申请人： Tsutomu Yamaguchi ,  Takehiro Nishida ,  Harumi Nishiguchi ,  Hitoshi Tada ,  Yasuaki Yoshida

发明人： Tsutomu Yamaguchi ,  Takehiro Nishida ,  Harumi Nishiguchi ,  Hitoshi Tada ,  Yasuaki Yoshida

IPC分类号： H01S5/22 ,  H01S5/20

CPC分类号： H01S5/22

摘要： A semiconductor laser is provided which emits laser light in which the intensity center of the far-field pattern in the horizontal direction does not vary with variation of the optical output and in which the shape of the far-field pattern in the horizontal direction is stable. The width of trenches is determined so that the magnitude (E1) of the electric field at the center of a ridge and the magnitude (E2) of the electric field at the edges of the trenches provide a ratio E1/E2 that is larger than 0.0001 and smaller than 0.01. In a semiconductor laser with a double-channel ridge structure, layers having a larger equivalent refractive index than the trenches exist outside the trenches. Accordingly, the semiconductor absorbs the light distributed outside the trenches and it is possible to obtain laser light in which the intensity center of the far-field pattern in the horizontal direction does not vary with variation of the optical output and in which the shape of the far-field pattern in the horizontal direction is stable.

摘要翻译： 提供一种半导体激光器，其发射激光，其中远场图案的水平方向的强度中心不随光输出的变化而变化，并且其中水平方向上的远场图案的形状是稳定的 。 确定沟槽的宽度，使得脊的中心处的电场的大小（E1）和沟槽边缘处的电场的幅度（E2）提供大于0.0001的比E1 / E2 小于0.01。 在具有双沟道脊结构的半导体激光器中，具有比沟槽更大的等效折射率的层存在于沟槽外部。 因此，半导体吸收分布在沟槽外侧的光，能够获得激光，其中远场图案的强度中心在水平方向上不随光输出的变化而变化，并且其形状 水平方向的远场模式是稳定的。

公开(公告)号：US20080219314A1

公开(公告)日：2008-09-11

申请号：US11934174

申请日：2007-11-02

申请人： Yasuaki Yoshida

发明人： Yasuaki Yoshida

IPC分类号： H01S5/00

CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01S3/22 ,  H01S5/028 ,  H01S5/0283 ,  H01S5/0287

摘要： A semiconductor laser device includes a cavity extending in a propagation direction of a laser beam (X-direction). A front facet is on one end of the cavity through which the laser beam is emitted. A rear facet is on the other end of the cavity. An anodic oxide film is provided on at least one of the front facet and the rear facet, and the anodic oxide film preferably has a thickness of λ/4n or an odd integer multiple thereof, where λ is the wavelength of the laser beam and n is the refractive index of the anodic oxide film.

摘要翻译： 半导体激光装置包括沿激光束（X方向）的传播方向延伸的空腔。 前面是在空腔的一端，激光束通过该端面发射。 后面是在腔的另一端。 阳极氧化膜设置在前面和后面的至少一个上，阳极氧化膜优选具有λ/ 4n的厚度或其奇数整数倍，其中λ是激光束的波长，n是 是阳极氧化膜的折射率。

公开(公告)号：US20080054277A1

公开(公告)日：2008-03-06

申请号：US11923751

申请日：2007-10-25

申请人： Masayoshi Takemi ,  Kenichi Ono ,  Yoshihiko Hanamaki ,  Chikara Watatani ,  Tetsuya Yagi ,  Harumi Nishiguchi ,  Motoko Sasaki ,  Shinji Abe ,  Yasuaki Yoshida

发明人： Masayoshi Takemi ,  Kenichi Ono ,  Yoshihiko Hanamaki ,  Chikara Watatani ,  Tetsuya Yagi ,  Harumi Nishiguchi ,  Motoko Sasaki ,  Shinji Abe ,  Yasuaki Yoshida

IPC分类号： H01L27/15

CPC分类号： B82Y20/00 ,  H01S5/0421 ,  H01S5/2226 ,  H01S5/2231 ,  H01S5/34326 ,  H01S5/3436

摘要： The semiconductor laser device includes an active layer, a p-type cladding layer, and a p-type cap layer. The layers are sequentially stacked so that the semiconductor laser device is provided. The p-type cap layer includes both a p-type dopant and an n-type dopant. In another aspect, the p-type cap layer includes a first layer including a first p-type dopant and a second layer including a second p-type dopant having a diffusion coefficient smaller than that of the first p-type dopant. The first layer is far from the active layer, and the second layer is close to the active layer. In further aspect, the p-type cap layer includes carbon (C) as a p-type dopant. According to these configuration, the p-type dopant can be prevented from being diffused in the active layer and the p-type cladding layer.

摘要翻译： 半导体激光器件包括有源层，p型覆层和p型覆盖层。 依次叠层这些层以提供半导体激光器件。 p型覆盖层包括p型掺杂剂和n型掺杂剂。 在另一方面，p型覆盖层包括包含第一p型掺杂剂的第一层和包含扩散系数小于第一p型掺杂剂的扩散系数的第二p型掺杂剂的第二层。 第一层远离有源层，第二层靠近有源层。 在另一方面，p型覆盖层包括作为p型掺杂剂的碳（C）。 根据这些结构，可以防止p型掺杂剂扩散到有源层和p型覆层中。

公开(公告)号：US07173273B2

公开(公告)日：2007-02-06

申请号：US10700047

申请日：2003-11-04

申请人： Harumi Nishiguchi ,  Tetsuya Yagi ,  Yasuaki Yoshida

发明人： Harumi Nishiguchi ,  Tetsuya Yagi ,  Yasuaki Yoshida

IPC分类号： H01L29/06 ,  H01L27/15 ,  H01L29/22

CPC分类号： B82Y20/00 ,  H01S5/162 ,  H01S5/209 ,  H01S5/22 ,  H01S5/2216 ,  H01S5/34326 ,  H01S5/3436

摘要： A semiconductor laser device has an n-GaAs substrate. On the n-GaAs substrate, by turns, are an n-AlGaInP cladding layer, an AlGaInP/GaInP MQW active layer, a p-AlGaInP first cladding layer, a single layer p-AlxGa1-xAs etching stopping layer, a p-AlGaInP second cladding layer with a stripe protrusion, and a p-GaAs contact layer. The portion, other than the stripe-form protrusion, of the p-AlGaInP second cladding layer is covered with an insulating film. The refractive index of the p-AlxGa1-xAs-ESL is nearly equal to the refractive index of each of the lower, first upper, and second upper cladding layers.

摘要翻译： 半导体激光器件具有n-GaAs衬底。 在n-GaAs衬底上，依次为n-AlGaInP包覆层，AlGaInP / GaInP MQW有源层，p-AlGaInP第一覆层，单层p-Al x Ga 作为蚀刻停止层，具有条纹突起的p-AlGaInP第二包覆层和p-GaAs接触层。 p-AlGaInP第二包层的除了条状突起之外的部分被绝缘膜覆盖。 p-Al x Ga 1-x As As ESL的折射率几乎等于下，第一上和第二上部包层中的每一个的折射率 层。

公开(公告)号：US06862311B2

公开(公告)日：2005-03-01

申请号：US10459530

申请日：2003-06-12

申请人： Yasuaki Yoshida

发明人： Yasuaki Yoshida

IPC分类号： H01S5/20 ,  H01S5/00 ,  H01S5/16 ,  H01S5/223 ,  H01S5/30 ,  H01S5/32 ,  H01S5/343

CPC分类号： B82Y20/00 ,  H01S5/162 ,  H01S5/2231 ,  H01S5/305 ,  H01S5/3211 ,  H01S5/3213 ,  H01S5/34326 ,  H01S5/3436 ,  H01S2301/18

摘要： A semiconductor laser device includes a lower cladding layer of n-(Al0.66Ga0.34)0.5In0.5P, an active layer having a window structure which has a disordered MQW structure, a first upper cladding layer of p-(Al0.7Ga0.3)0.5In0.5P, and a second upper cladding layer of (Al0.66Ga0.34)0.5In0.5P sequentially disposed on an n-GaAs substrate. The refractive index of the first upper cladding layer is smaller than that of the lower cladding layer, and refractive index of the second upper cladding layer is larger than that of the first upper cladding layer and identical to that of the lower cladding layer. The position of peak light intensity at the window structure of the active layer coincides with or very closely approaches the position of the active layer.

摘要翻译： 半导体激光器件包括n型（Al 0.66 Ga 0.34）0.5 In 0.5 P的下包层，具有无序MQW结构的窗结构的有源层，p（Al0.7Ga0 .3）0.5In0.5P，和依次设置在n-GaAs衬底上的（Al 0.66 Ga 0.34）0.5 In 0.5 P的第二上包层。 第一上包层的折射率小于下包层的折射率，第二上包层的折射率大于第一上包层的折射率，并且与下包层的折射率相同。 有源层的窗口结构处的峰值光强度的位置与活性层的位置一致或非常接近。

公开(公告)号：US5371352A

公开(公告)日：1994-12-06

申请号：US85990

申请日：1993-07-06

申请人： Yasuaki Yoshida

发明人： Yasuaki Yoshida

IPC分类号： G01R31/26 ,  G01R31/28 ,  H01L21/66 ,  H01L23/544 ,  H01L27/14 ,  H01L27/146 ,  H01L31/10 ,  H01L31/18

CPC分类号： H01L22/14 ,  G01R31/2635 ,  G01R31/2831 ,  H01L22/34 ,  H01L27/14623 ,  H01L27/1465

摘要： A photodetector includes a light responsive element including a semiconductor layer having a plurality of first spaced apart p-n junctions for generating electrical signals in response to incident light, a test element group (TEG) for testing an electrical characteristic of the first p-n junctions, the test element group including a plurality of second spaced apart p-n junctions in the semiconductor layer, and a light shielding mask covering the second spaced apart p-n junctions and preventing incident light from reaching the second spaced apart p-n junctions. The light shielding mask includes at least one window transmitting light, and the window is spaced from each of the second spaced apart p-n junctions. During testing of the electrical characteristics of the photodetector using the TEG, light is not incident directly on the second p-n junctions of the TEG but incident on the semiconductor layer through the window spaced from the second p-n junctions, and the maximum diffusion length of the minority charge carriers in the light responsive element is detected from the result of the test using the TEG. Therefore, the spatial resolution of the photodetector included in a wafer is monitored, and the photodetector is distinguished as defective and nondefective according to the monitored spatial resolution.

摘要翻译： 光检测器包括光响应元件，其包括具有多个第一间隔开的pn结的半导体层，用于响应于入射光产生电信号;测试元件组（TEG），用于测试第一pn结的电特性，测试 在半导体层中包括多个第二间隔开的pn结的元件组，以及覆盖第二间隔开的pn结的防光掩模，并防止入射光到达第二间隔开的pn结。 遮光掩模包括至少一个透光的窗口，并且窗口与每个第二间隔开的p-n结线分开。 在使用TEG的光电检测器的电特性测试期间，光不直接入射到TEG的第二pn结上，而是通过与第二pn结隔开的窗口入射到半导体层上，并且少数的最大扩散长度 从使用TEG的测试结果中检测光响应元件中的电荷载体。 因此，监视包括在晶片中的光电检测器的空间分辨率，并且根据监视的空间分辨率将光电检测器区分为有缺陷且无缺陷。

公开(公告)号：US5168338A

公开(公告)日：1992-12-01

申请号：US884762

申请日：1992-05-18

申请人： Norimasa Kumada ,  Yoshihiro Hisa ,  Yasuaki Yoshida

发明人： Norimasa Kumada ,  Yoshihiro Hisa ,  Yasuaki Yoshida

IPC分类号： H01L27/14 ,  H01L27/146 ,  H01L31/10

CPC分类号： H01L27/1465

摘要： A solid-state imaging device includes a photodiode array having a plurality of pixels, each pixel including a second conductivity type region formed in a first conductivity type semiconductor layer, an electrode common to all the pixels and disposed on the first conductivity type semiconductor layer, a signal transfer part for transferring signal charges generated in the pixels and a DC voltage source for applying a DC voltage in a forward direction to the pixels. The reverse bias voltage applied to a photodiode due to the voltage applied by the signal input stage of the signal transfer part is canceled by the forward DC voltage applied to the common electrode. As a result, the operating points of the pixels are uniform when nearly zero bias voltage is applied to the pixels.

摘要翻译： 固态成像装置包括具有多个像素的光电二极管阵列，每个像素包括形成在第一导电类型半导体层中的第二导电类型区域，所有像素共同设置并设置在第一导电类型半导体层上的电极， 用于传送在像素中生成的信号电荷的信号传送部分和用于向正方向施加直流电压的直流电压源。 由于由信号传输部分的信号输入级施加的电压而施加到光电二极管的反向偏置电压被施加到公共电极的正向直流电压抵消。 结果，当将近零偏压施加到像素时，像素的工作点是均匀的。

公开(公告)号：US5003565A

公开(公告)日：1991-03-26

申请号：US439325

申请日：1989-11-21

申请人： Yasuaki Yoshida

发明人： Yasuaki Yoshida

IPC分类号： H04N5/33 ,  H01L27/148 ,  H04N5/335 ,  H04N5/341 ,  H04N5/357 ,  H04N5/369 ,  H04N5/372 ,  H04N5/378

CPC分类号： H04N5/365 ,  H01L27/14831 ,  H04N5/359 ,  H04N5/372

摘要： A solid state imaging array for generating a plurality of electrical imaging signals includes photodiodes for producing electrical charges in response to incident light, a signal processing circuit including a charge skimming electrode associated with each sensor for receiving and storing electrical charges from the associated sensor and for transferring a skimmed portion of the stored electrical charge to a respective charge coupled device. The skimmed portion of the electrical charge is determined by the magnitude of a skimming voltage applied to the respective skimming electrode. The array includes a second charge coupled device for applying different magnitude skimming voltages to each of the skimming electrodes in order to compensate for variations in the sensitivities of the photodiodes. The individual compensation is achieved for all of the photodiodes through only two external terminals.