公开(公告)号：US07504664B2

公开(公告)日：2009-03-17

申请号：US11373167

申请日：2006-03-13

Applicant: Tohru Takiguchi

Inventor： Tohru Takiguchi

IPC: H01L27/15

CPC classification number: H01S5/227 ,  B82Y20/00 ,  H01L33/145 ,  H01S5/2201 ,  H01S5/221 ,  H01S5/2222 ,  H01S5/2223 ,  H01S5/2224 ,  H01S5/305 ,  H01S5/3054 ,  H01S5/34313 ,  H01S2304/04

Abstract: A semiconductor optical device includes an active layer, a current blocking layer on both sides of the active layer, and a cladding layer on both the active layer and the current blocking layer. The current blocking layer includes a buried layer, at least one intermediate layer of Al(Ga)InAs and a cover blocking layer. The cover blocking layer is located between the cladding layer and the Al(Ga)InAs layers and has a higher oxidation resistance than the Al(Ga)InAs layer. The current blocking layer is grown such that each Al(Ga)InAs layer is not exposed at the surface of the current blocking layer.

Abstract translation: 半导体光学器件包括有源层，有源层两侧的电流阻挡层以及有源层和电流阻挡层两者上的覆层。 电流阻挡层包括掩埋层，Al（Ga）InAs的至少一个中间层和覆盖物阻挡层。 覆盖阻挡层位于包覆层和Al（Ga）InAs层之间，并且具有比Al（Ga）InAs层更高的抗氧化性。 生长电流阻挡层，使得每个Al（Ga）InAs层不暴露在电流阻挡层的表面。

公开(公告)号：US20070045633A1

公开(公告)日：2007-03-01

申请号：US11373167

申请日：2006-03-13

Applicant: Tohru Takiguchi

Inventor： Tohru Takiguchi

IPC: H01L33/00

CPC classification number: H01S5/227 ,  B82Y20/00 ,  H01L33/145 ,  H01S5/2201 ,  H01S5/221 ,  H01S5/2222 ,  H01S5/2223 ,  H01S5/2224 ,  H01S5/305 ,  H01S5/3054 ,  H01S5/34313 ,  H01S2304/04

Abstract: A semiconductor optical device includes an active layer, a current blocking layer on both sides of the active layers and a cladding layer on both the active layer and the current blocking layer. The current blocking layer includes a buried layer, at least one intermediate layer of Al(Ga)InAs and a cover blocking layer. The cover blocking layer is located between the cladding layer and the Al(Ga)InAs layers and has a higher oxidation resistance than the Al(Ga)InAs layer. The current blocking layer is grown such that each Al(Ga)InAs layer is not exposed at the surface of the current blocking layer.

Abstract translation: 半导体光学器件包括有源层，有源层两侧的电流阻挡层和有源层和电流阻挡层两者上的覆层。 电流阻挡层包括掩埋层，Al（Ga）InAs的至少一个中间层和覆盖物阻挡层。 覆盖阻挡层位于包覆层和Al（Ga）InAs层之间，并且具有比Al（Ga）InAs层更高的抗氧化性。 生长电流阻挡层，使得每个Al（Ga）InAs层不暴露在电流阻挡层的表面。

公开(公告)号：US06741630B2

公开(公告)日：2004-05-25

申请号：US10245495

申请日：2002-09-18

Applicant: Tohru Takiguchi

Inventor： Tohru Takiguchi

IPC: H01S500

CPC classification number: H01S5/12 ,  H01S5/22 ,  H01S5/3054

Abstract: A ridge waveguide distributed feedback laser includes a p-type InGaAsP grating layer having a p-type carrier density ranging from 1.5×1018 cm−3 to 4.0×10−3 cm−3 and preferably from 2.0×1018 cm−3 to 3.0×1018 cm−3. In combination with such raised levels of p-type carrier density in the InGaAsP grating layer, the p-type carrier density may also be enhanced both in a p-type InP layer between the grating layer and a contact layer, and in another p-type InP layer between the grating layer and a quantum well active layer, the density ranging from 1.5×1018 cm−3 to 4.0×1018 cm−3 and preferably from 2.0×1018 cm−3 to 3.0×1018 cm−3.

Abstract translation: 脊波导分布反馈激光器包括p型InGaAsP光栅层，其具有范围为1.5×10 18 cm -3至4.0×10 -3 cm -3的p型载流子密度，优选为2.0×10 <18>厘米-3 -3.0×10 18 cm -3。 结合InGaAsP光栅层中p型载流子浓度的这种升高的水平，p型载流子密度也可以在光栅层和接触层之间的p型InP层中增强， 在光栅层和量子阱活性层之间的InP层的密度范围为1.5×10 18 cm -3至4.0×10 18 cm -3，优选为2.0×10 18 cm -3， 3> 3.0×10 18 cm -3。

公开(公告)号：US5198370A

公开(公告)日：1993-03-30

申请号：US830852

申请日：1992-02-04

Applicant: Yuji Ohkura ,  Tohru Takiguchi

Inventor： Yuji Ohkura ,  Tohru Takiguchi

IPC: H01L31/10 ,  H01L31/18

CPC classification number: H01L31/1832 ,  Y10S438/919 ,  Y10S438/971

Abstract: In a method of producing an infrared detector, a first conductivity type semiconductor layer, in which lattice vacancies acting as first conductivity type carriers are formed by evaporation of an element during annealing, is formed on a substrate and dopant impurities producing a second conductivity type are diffused in an annealing step from the impurity layer into the first conductivity type semiconductor layer to form pixel regions. During the diffusion, the surface of the first conductivity type compound semiconductor layer corresponding to non-pixel regions is exposed. In the regions of the first conductivity type semiconductor layer which becomes non-pixel regions, the first conductivity type carrier concentration increases due to the lattice vacancies generated by the evaporation of an element and, even when the dopant impurity is diffused into these regions, these regions remain first conductivity type regions.

Abstract translation: 在制造红外线检测器的方法中，在基板上形成第一导电型半导体层，其中，作为第一导电型载流子的晶格空位由退火时的元素蒸发而形成，产生第二导电型的掺杂杂质为 在从杂质层到第一导电型半导体层的退火步骤中扩散以形成像素区域。 在扩散期间，暴露与非像素区对应的第一导电型化合物半导体层的表面。 在成为非像素区域的第一导电型半导体层的区域中，由于元素的蒸发产生的晶格空位，第一导电型载流子浓度增加，并且即使当掺杂剂杂质扩散到这些区域中时，这些 区域保持第一导电类型区域。

公开(公告)号：US08792756B2

公开(公告)日：2014-07-29

申请号：US13572753

申请日：2012-08-13

Applicant: Tohru Takiguchi

Inventor： Tohru Takiguchi

IPC: G02B6/12

CPC classification number: H01S5/026 ,  G02B6/122 ,  G02B6/4202 ,  G02B2006/121 ,  H01S5/1014 ,  H01S5/1017 ,  H01S5/2275

Abstract: An optical semiconductor device includes an optical semiconductor element and an optical waveguide butt-joined to the optical semiconductor element. The optical semiconductor element has a mesa structure including an active layer and a burying layer coating side faces of the active layer. The optical waveguide has a mesa structure including an optical waveguide layer having a layer structure different from the active layer, and a burying layer coating side faces of the optical waveguide layer. Mesa width of the optical waveguide is narrower than mesa width of the optical semiconductor element.

Abstract translation: 光半导体器件包括光半导体元件和与该光半导体元件对接的光波导。 光学半导体元件具有包括有源层和覆盖层的台面结构，该掩埋层涂覆有源层的侧面。 光波导具有包括具有不同于有源层的层结构的光波导层的台面结构，以及涂覆光波导层的侧面的掩埋层。 光波导的台面宽度比光半导体元件的台面宽度窄。

公开(公告)号：US06618411B1

公开(公告)日：2003-09-09

申请号：US09632908

申请日：2000-08-04

Applicant: Tohru Takiguchi ,  Kyosuke Kuramoto

Inventor： Tohru Takiguchi ,  Kyosuke Kuramoto

IPC: H01S319

CPC classification number: H01S5/22 ,  H01S5/0425 ,  H01S5/06226 ,  H01S5/2063 ,  H01S5/209

Abstract: A ridge waveguide semiconductor laser that is excellent in optical output characteristic and high-frequency characteristic is provided. A p-type InP cladding layer having a ridge shape is formed over a p-type AlInAs cladding layer via a p-type InP layer and a p-type GaInAsP etching stopper layer, thereby suppressing the increase in the series resistance due to discontinuous band structure between an etching stopper layer and the AlGaInAs cladding layer and reducing the threshold current of the laser. Also the InP cladding layer is formed in a ridge shape with the portion near the base thereof being splayed like a skirt, thereby keeping the p-type metal electrode from the light emitting region and suppressing the absorption loss of light due to the p-type metal electrode. Further, by increasing the resistance of the active layers in the region that interposes a main current path, parasitic capacitance formed by the active layer in the region where current does not flow can be decreased thereby improving the high-frequency characteristic of the laser.

Abstract translation: 提供了具有优异的光输出特性和高频特性的脊波导半导体激光器。 通过p型InP层和p型GaInAsP蚀刻阻挡层在p型AlInAs覆盖层上形成具有脊形的p型InP覆盖层，由此抑制由于不连续带导致的串联电阻的增加 蚀刻停止层与AlGaInAs覆层之间的结构，并且降低激光器的阈值电流。 此外，InP包层形成为脊状，其基部附近的部分像裙部一样地露出，从而保持p型金属电极不受发光区域的影响，并且抑制由于p型而导致的光的吸收损失 金属电极。 此外，通过增加插入主电流路径的区域中的有源层的电阻，可以减小由有源层在电流不流动的区域形成的寄生电容，从而提高激光器的高频特性。

公开(公告)号：US5452383A

公开(公告)日：1995-09-19

申请号：US188233

申请日：1994-01-28

Applicant: Tohru Takiguchi

Inventor： Tohru Takiguchi

IPC: G02F1/017 ,  G02F1/313 ,  H01S5/026 ,  H01S5/227 ,  H01S5/343 ,  H01S5/50 ,  H04Q3/52 ,  G02B6/10 ,  H01L21/70 ,  H01L27/12

CPC classification number: B82Y20/00 ,  G02F1/3138 ,  H01S5/50 ,  G02F1/01708 ,  H01S5/026 ,  H01S5/2272 ,  H01S5/34306 ,  H01S5/3434

Abstract: An optical switch includes a semiconductor substrate having a surface, a ridge waveguide disposed on the surface of the semiconductor substrate and including an optical waveguide layer having an MQW structure, first and second cladding layers sandwiching the optical waveguide layer, and a switch disposed in a part of the ridge waveguide. A part of the MQW optical waveguide layer included in the switch is thicker than the other part of the optical waveguide layer, whereby the energy band gap of the optical waveguide layer of the switch is smaller than the energy band gap of the other part of the optical waveguide layer and larger than the energy of the signal light. Therefore, the absorption loss of the signal light traveling through the optical waveguide layer is reduced. Furthermore, since the variation in the refractive index of the switch when current is applied to the switch is increased, the ON/OFF ratio of the switch is increased.

Abstract translation: 一种光开关包括具有表面的半导体衬底，设置在半导体衬底的表面上的脊波导，并且包括具有MQW结构的光波导层，夹着光波导层的第一和第二覆层以及设置在该光波导层中的开关 脊波导的一部分。 包含在开关中的MQW光波导层的一部分比光波导层的另一部分厚，由此开关的光波导层的能带隙比其他部分的能带隙小 光波导层和大于信号光的能量。 因此，通过光波导层传播的信号光的吸收损耗降低。 此外，由于当电流施加到开关时开关的折射率的变化增加，所以开关的开/关比增加。

公开(公告)号：US5187378A

公开(公告)日：1993-02-16

申请号：US739507

申请日：1991-08-02

Applicant: Tohru Takiguchi

Inventor： Tohru Takiguchi

IPC: H01L31/10 ,  H01L31/103 ,  H01L31/18

CPC classification number: H01L31/1032 ,  H01L31/1035 ,  H01L31/1832

Abstract: A photodetector includes a compound semiconductor substrate including first and second elements and having a first energy band gap, a first conductivity type compound semiconductor light absorbing layer including at least one of the first and second elements and having a second energy band gap narrower than the first energy band gap, a transition layer having an energy band gap at least as wide as the second energy band gap and no wider than the first energy band gap disposed between and contacting the substrate and the light absorbing layer, at least a first recess extending through the substrate and the transition layer to the light absorbing layer, a second conductivity type region disposed in the light absorbing layer at the first recess, a first electrode disposed in the first recess in contact with the second conductivity type region, and a second electrode disposed in contact with the first conductivity type light absorbing layer.

Abstract translation: 光电检测器包括包括第一和第二元件并具有第一能带隙的化合物半导体衬底，第一导电类型化合物半导体光吸收层，其包括第一和第二元件中的至少一个，并且具有比第一能带窄的第一能带隙 能带隙，具有至少与第二能带隙一样宽的能带隙的过渡层，并且不比设置在衬底和光吸收层之间并接触衬底和光吸收层之间的第一能带隙宽，至少延伸穿过第一凹槽 所述基板和到所述光吸收层的过渡层，设置在所述第一凹部处的所述光吸收层中的第二导电类型区域，设置在与所述第二导电类型区域接触的所述第一凹部中的第一电极和设置在所述第二凹部中的第二电极 与第一导电型光吸收层接触。

公开(公告)号：US20140056556A1

公开(公告)日：2014-02-27

申请号：US13832559

申请日：2013-03-15

Applicant: Yoshifumi Sasahata ,  Tohru Takiguchi ,  Keisuke Matsumoto ,  Masakazu Takabayashi

Inventor： Yoshifumi Sasahata ,  Tohru Takiguchi ,  Keisuke Matsumoto ,  Masakazu Takabayashi

IPC: F21V8/00

CPC classification number: G02B6/0001 ,  B82Y20/00 ,  G02B6/122 ,  G02B6/2813 ,  G02B2006/1215 ,  H01S5/026 ,  H01S5/0265 ,  H01S5/227 ,  H01S5/34306 ,  H01S5/4031

Abstract: An optical semiconductor device includes: semiconductor lasers separated into two groups; an optical coupler combining light output from the semiconductor lasers; an optical amplifier amplifying light output from the optical coupler; and waveguides respectively connecting the semiconductor lasers to the optical coupler. Each of the waveguides includes a respective bent waveguide. The bent waveguides have the same radius of curvature.

Abstract translation: 光学半导体器件包括：分成两组的半导体激光器; 组合来自半导体激光器的光输出的光耦合器; 放大从光耦合器输出的光的光放大器; 以及分别将半导体激光器连接到光耦合器的波导管。 每个波导包括相应的弯曲波导。 弯曲的波导具有相同的曲率半径。

公开(公告)号：US08233515B2

公开(公告)日：2012-07-31

申请号：US12713215

申请日：2010-02-26

Applicant: Tohru Takiguchi

Inventor： Tohru Takiguchi

IPC: H01S3/04 ,  H01S5/00

CPC classification number: H01S5/026 ,  G02B6/12004 ,  G02B2006/12078 ,  H01L21/02538 ,  H01L21/0262 ,  H01S5/2218 ,  H01S5/2275

Abstract: An optical waveguide integrated semiconductor optical device includes a laser and an optical waveguide. The laser includes an active layer and a first cladding layer which are stacked on a second cladding layer. The optical waveguide includes an optical guiding layer and an undoped InP layer which are also stacked on the second cladding layer. A high resistance layer is located between the top surface of the optical guiding layer and a surface of the undoped InP layer and between a side of the first cladding layer and a side of the undoped InP layer.

Abstract translation: 光波导集成半导体光学器件包括激光器和光波导。 激光器包括层叠在第二覆层上的有源层和第一覆层。 光波导包括也被层叠在第二覆层上的光引导层和未掺杂的InP层。 高电阻层位于光导层的顶表面和未掺杂的InP层的表面之间，并且位于第一包层的一侧和未掺杂的InP层的一侧之间。