ATOMIC EMISSION SPECTROSCOPY ON A CHIP
    4.
    发明申请
    ATOMIC EMISSION SPECTROSCOPY ON A CHIP 审中-公开
    芯片上的原子发射光谱

    公开(公告)号:US20090298193A1

    公开(公告)日:2009-12-03

    申请号:US12433448

    申请日:2009-04-30

    CPC分类号: G01N21/67

    摘要: A method of inducing explosive atomization of materials is provided using a metal-oxide-semiconductor (MOS)-based structure under electrical excitation. Explosive atomization of the gate electrode and surrounding dielectric materials creates a microplasma that is substantially confined with the device at the metal/dielectric interface. The device can generate a microplasma in either the accumulation or inversion regime. The high degree of confinement of the microplasma allows chip-scale implementation of atomic emission spectroscopy and detection using a minimal amount of analyte.

    摘要翻译: 在电激励下使用金属氧化物半导体(MOS)的结构提供了引起材料爆炸性雾化的方法。 栅电极和周围电介质材料的爆炸性雾化产生了基本上与金属/电介质界面处的器件限制的微等离子体。 该装置可以在积累或反转方式中产生微量等级。 微量级的高度限制允许使用最少量的分析物进行原子发射光谱和检测的芯片级实施。