公开(公告)号：US07659979B2

公开(公告)日：2010-02-09

申请号：US11869969

申请日：2007-10-10

Applicant: Martin Edward Murtagh ,  Patrick Vincent Kelly ,  Houssam Chouaib ,  Vincent Guénebaut

Inventor： Martin Edward Murtagh ,  Patrick Vincent Kelly ,  Houssam Chouaib ,  Vincent Guénebaut

IPC: G01N21/00 ,  G01J3/28

CPC classification number: G01N21/1717 ,  G01N21/9501

Abstract: Performing modulation spectroscopy by directing a probe beam and a pump beam at a strained semiconductor sample, modulating the pump beam, and reflecting the probe beam into a detector. The detector produces a direct current signal proportional to reflectance R of the probe beam and an alternating current signal proportional to the modulation of the reflectance ΔR of the probe beam. Both R and ΔR are measured at a multiplicity of probe beam photon energies, to provide a spectrum having at least one line shape. The spectrum is analyzed to measure energy differences between interband electronic transitions of the sample, and the strain of the sample is determined from the energy differences.

Abstract translation: 通过将探针光束和泵浦光束引导到应变半导体样品，调制泵浦光束并将探测光束反射到检测器中来执行调制光谱。 检测器产生与探针光束的反射率R成比例的直流信号和与探测光束的反射率DeltaR的调制成比例的交流信号。 在多个探测光束光子能量下测量R和DeltaR，以提供具有至少一个线形的光谱。 分析频谱以测量样品的带间电子跃迁之间的能量差，并且样品的应变由能量差确定。

公开(公告)号：US08804106B2

公开(公告)日：2014-08-12

申请号：US13530774

申请日：2012-06-22

Applicant: NanChang Zhu ,  Derrick Shaughnessy ,  Houssam Chouaib ,  Yaolei Zheng ,  Lu Yu ,  Jianli Cui ,  Jin An ,  Jianou Shi

Inventor： NanChang Zhu ,  Derrick Shaughnessy ,  Houssam Chouaib ,  Yaolei Zheng ,  Lu Yu ,  Jianli Cui ,  Jin An ,  Jianou Shi

IPC: G01N21/00 ,  G01B11/28

CPC classification number: G01B11/0633 ,  G01N21/1717 ,  G01N21/55 ,  G01N21/8422 ,  G01N21/9501 ,  G01N2021/1719 ,  G01N2021/8427

Abstract: The disclosure is directed to nondestructive systems and methods for simultaneously measuring active carrier concentration and thickness of one or more doped semiconductor layers. Reflectance signals may be defined as functions of active carrier concentration and thickness varying over different wavelengths and over different incidence angles of analyzing illumination reflected off the surface of an analyzed sample. Systems and methods are provided for collecting a plurality of reflectance signals having either different wavelengths or different incidence angle ranges to extract active carrier density and thickness of one or more doped semiconductor layers.

Abstract translation: 本公开涉及用于同时测量一个或多个掺杂半导体层的有源载流子浓度和厚度的非破坏性系统和方法。 反射信号可以被定义为在不同波长上变化的有效载流子浓度和厚度的函数以及从分析样品的表面反射的分析照射的不同入射角的函数。 提供了系统和方法来收集具有不同波长或不同入射角范围的多个反射信号，以提取一个或多个掺杂半导体层的有效载流子密度和厚度。

公开(公告)号：US20130003050A1

公开(公告)日：2013-01-03

申请号：US13530774

申请日：2012-06-22

Applicant: NanChang Zhu ,  Derrick Shaughnessy ,  Houssam Chouaib ,  Yaolei Zheng ,  Lu Yu ,  Jianli Cui ,  Jin An ,  Jianou Shi

Inventor： NanChang Zhu ,  Derrick Shaughnessy ,  Houssam Chouaib ,  Yaolei Zheng ,  Lu Yu ,  Jianli Cui ,  Jin An ,  Jianou Shi

IPC: G01B11/06 ,  G01N21/88 ,  G01N21/47

CPC classification number: G01B11/0633 ,  G01N21/1717 ,  G01N21/55 ,  G01N21/8422 ,  G01N21/9501 ,  G01N2021/1719 ,  G01N2021/8427

Abstract: The disclosure is directed to nondestructive systems and methods for simultaneously measuring active carrier concentration and thickness of one or more doped semiconductor layers. Reflectance signals may be defined as functions of active carrier concentration and thickness varying over different wavelengths and over different incidence angles of analyzing illumination reflected off the surface of an analyzed sample. Systems and methods are provided for collecting a plurality of reflectance signals having either different wavelengths or different incidence angle ranges to extract active carrier density and thickness of one or more doped semiconductor layers.

Abstract translation: 本公开涉及用于同时测量一个或多个掺杂半导体层的有源载流子浓度和厚度的非破坏性系统和方法。 反射信号可以被定义为在不同波长上变化的有效载流子浓度和厚度的函数以及从分析样品的表面反射的分析照射的不同入射角的函数。 提供了系统和方法来收集具有不同波长或不同入射角范围的多个反射信号，以提取一个或多个掺杂半导体层的有效载流子密度和厚度。

公开(公告)号：US20080218741A1

公开(公告)日：2008-09-11

申请号：US11869969

申请日：2007-10-10

Applicant: Martin Edward Murtagh ,  Patrick Vincent Kelly ,  Houssam Chouaib ,  Vincent Guenebaut

Inventor： Martin Edward Murtagh ,  Patrick Vincent Kelly ,  Houssam Chouaib ,  Vincent Guenebaut

IPC: G01N21/00

CPC classification number: G01N21/1717 ,  G01N21/9501

Abstract: In one embodiment, a modulation spectroscopy method comprises the steps of directing a probe beam and a pump beam at a sample, modulating the pump beam, and the probe beam is reflected from the sample into a detector. The sample may include a strained semiconductor. The detector may produce as output an electrical signal which comprises a large d.c. signal proportional to reflectance R of the probe beam and a small a.c. modulated signal at the modulation frequency proportional to the modulation of the reflectance ΔR of the probe beam. Both the reflectance R of the probe beam and the modulation of the reflectance ΔR of the probe beam are measured at a multiplicity of probe beam photon energies arising from different wavelengths of the probe beam, to provide a photoreflectance spectrum comprising at least one photoreflectance lineshape. The photoreflectance spectrum is analysed to measure energy differences between interband electronic transitions of the strained semiconductor, and the strain of the strained semiconductor is determined according to said energy differences.

Abstract translation: 在一个实施例中，调制光谱方法包括以下步骤：将探测光束和泵浦光束引导到样品处，调制泵浦光束，并且探测光束从样品反射到检测器中。 样品可以包括应变半导体。 检测器可以产生包括大直流电的电信号作为输出。 与探头光束的反射率R成正比的信号和小的a.c. 调制信号以与探测光束的反射率DeltaR的调制成正比的调制频率。 探测光束的反射率R和探测光束的反射率DeltaR的调制都是在由探测光束的不同波长产生的多个探测光束光子能量下测量的，以提供包括至少一个光反射线条形状的光反射光谱。 分析光反射光谱以测量应变半导体的带间电子跃迁之间的能量差，并且根据所述能量差确定应变半导体的应变。