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    Mechanized retractable pellicles and methods of use
    2.
    发明授权
    Mechanized retractable pellicles and methods of use 失效
    机械化可伸缩薄膜和使用方法

    公开(公告)号：US06734445B2

    公开(公告)日：2004-05-11

    申请号：US09840364

    申请日：2001-04-23

    申请人： Arun Ramamoorthy ,  Hsing-Chien Ma

    发明人： Arun Ramamoorthy ,  Hsing-Chien Ma

    IPC分类号： G03B2762

    CPC分类号： G03F1/64 ,  G03F7/70983

    摘要： Apparatus and methods to protect a photomask that is used for semiconductor photolithography at wavelengths outside the visible spectrum include a pellicle that is readily retracted during exposure or to provide access to the photomask. The pellicle can be transparent at an inspection wavelength and opaque at an exposure wavelength. In various embodiments, the pellicle is slid, retracted, or pivoted relative to a base aligned with the photomask, thus uncovering the photomask. When overlying the photomask, the pellicle can be secured with magnetic elements, such as magnets or electromagnets. In another embodiment, the pellicle includes a diaphragm that can be opened or closed. Methods of using a pellicle are also described.

    摘要翻译： 用于保护在可见光谱外的波长处用于半导体光刻的光掩模的装置和方法包括在曝光期间容易缩回或提供对光掩模的访问的防护薄膜组件。 防护薄膜组件在检测波长下可以是透明的，并且在曝光波长处是不透明的。 在各种实施例中，防护薄膜组件相对于与光掩模对准的底座滑动，缩回或枢转，从而露出光掩模。 当覆盖光掩模时，防护薄膜组件可以用诸如磁体或电磁体的磁性元件固定。 在另一个实施例中，防护薄膜组件包括可打开或关闭的隔膜。 还描述了使用防护薄膜的方法。

    Mechanized retractable pellicles and methods of use
    3.
    发明授权
    Mechanized retractable pellicles and methods of use 有权
    机械化可伸缩薄膜和使用方法

    公开(公告)号：US07102127B2

    公开(公告)日：2006-09-05

    申请号：US10756041

    申请日：2004-01-13

    申请人： Arun Ramamoorthy ,  Hsing-Chien Ma

    发明人： Arun Ramamoorthy ,  Hsing-Chien Ma

    IPC分类号： B01D59/44 ,  H01J49/00

    CPC分类号： G03F1/64 ,  G03F7/70983

    摘要： Apparatus and methods to protect a photomask that is used for semiconductor photolithography at wavelengths outside the visible spectrum include a pellicle that is readily retracted during exposure or to provide access to the photomask. The pellicle can be transparent at an inspection wavelength and opaque at an exposure wavelength. In various embodiments, the pellicle is slid, retracted, or pivoted relative to a base aligned with the photomask, thus uncovering the photomask. When overlying the photomask, the pellicle can be secured with magnetic elements, such as magnets or electromagnets. In another embodiment, the pellicle includes a diaphragm having a plurality of shutter leaves that can be opened or closed. Methods of using a pellicle are also described.

    摘要翻译： 用于保护在可见光谱外的波长处用于半导体光刻的光掩模的装置和方法包括在曝光期间容易缩回或提供对光掩模的访问的防护薄膜组件。 防护薄膜组件在检测波长下可以是透明的，并且在曝光波长处是不透明的。 在各种实施例中，防护薄膜组件相对于与光掩模对准的底座滑动，缩回或枢转，从而露出光掩模。 当覆盖光掩模时，防护薄膜组件可以用诸如磁体或电磁体的磁性元件固定。 在另一个实施例中，防护薄膜组件包括具有可以打开或关闭的多个快门叶片的隔膜。 还描述了使用防护薄膜的方法。

    Double layer photoresist technique for side-wall profile control in plasma etching processes
    6.
    发明授权
    Double layer photoresist technique for side-wall profile control in plasma etching processes 失效
    用于等离子体蚀刻工艺中侧壁轮廓控制的双层光刻胶技术

    公开(公告)号：US4645562A

    公开(公告)日：1987-02-24

    申请号：US728012

    申请日：1985-04-29

    申请人： Kuan Y. Liao ,  Kuang-Yeh Chang ,  Hsing-Chien Ma

    发明人： Kuan Y. Liao ,  Kuang-Yeh Chang ,  Hsing-Chien Ma

    IPC分类号： H01L21/302 ,  H01L21/027 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/3213 ,  B44C1/22 ,  B29C17/08 ,  C03C15/00 ,  C03C25/06

    CPC分类号： H01L21/32137 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/32136

    摘要： A photolithographic process useful for VLSI fabrication is disclosed for achieving side-wall profile control of poly lines, metal lines, contact and via openings. Layers of a first and second photoresist materials are formed on the poly, metal or oxide-covered substrate. The top layer is patterned by conventional processes to define the final device geometry. The bottom layer is exposed and over-developed to form an overhang structure about the line pattern or the contact/via opening. During the subsequent anisotropic plasma-assisted etching step, some ions or particles are passed obliquely over the overhang and bombard the opening corner, the side-wall and the under-cut area. The plasma-assisted etching step not only forms the poly or metal lines, or the contact or via opening, but also results in an opening with rounded corners and a smoothly tapered side-wall profile. The subsequent metal film deposition step results in a uniform film thickness around the edges of the opening. The process thus alleviates the problem of high contact resistance previously encountered as a result of dry etching the contact or via openings.

    摘要翻译： 公开了一种用于VLSI制造的光刻工艺，用于实现多线，金属线，接触和通孔的侧壁轮廓控制。 第一和第二光致抗蚀剂材料的层在多金属或氧化物覆盖的基底上形成。 通过常规方法对顶层进行图案化以定义最终的装置几何形状。 底层暴露并过度显影以形成围绕线图案或接触/通孔开口的悬垂结构。 在随后的各向异性等离子体辅助蚀刻步骤中，一些离子或颗粒倾斜地穿过悬垂物并且轰击开口角，侧壁和下切区域。 等离子体辅助蚀刻步骤不仅形成多个或金属线，或接触或通孔，而且还形成具有圆角和平滑锥形侧壁轮廓的开口。 随后的金属膜沉积步骤导致围绕开口边缘的均匀的膜厚度。 因此，该方法减轻了由于干蚀刻接触或通孔的结果而先前遇到的高接触电阻的问题。