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公开(公告)号：US20100013441A1
公开(公告)日：2010-01-21
申请号：US12356705
申请日：2009-01-21
Applicant: Hu Peng , Haiqing Li
Inventor： Hu Peng , Haiqing Li
CPC classification number: H02J7/0068
Abstract: A temperature controller is provided, which comprises a control circuit. The temperature controller further comprises a charging circuit and a chargeable battery. The charging circuit functions to charge the chargeable battery and at the same time supply power to the control circuit. In the temperature controller according to the present invention, the chargeable battery is charged by an external power source, and the chargeable battery can be reused, thereby reducing cost of the temperature controller and environmental pollution caused by using alkaline batteries.
Abstract translation: 提供了一种温度控制器，其包括控制电路。 温度控制器还包括充电电路和可充电电池。 充电电路用于对可充电电池充电，同时为控制电路供电。 在根据本发明的温度控制器中，可充电电池由外部电源充电，并且可再充电电池，从而降低了温度控制器的成本和使用碱性电池引起的环境污染。
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公开(公告)号：US07496498B2
公开(公告)日：2009-02-24
申请号：US10396944
申请日：2003-03-24
CPC classification number: G10L13/08
Abstract: A text processing system for processing multi-lingual text for a speech synthesizer includes a first language dependent module for performing at least one of text and prosody analysis on a portion of input text comprising a first language. A second language dependent module performs at least one of text and prosody analysis on a second portion of input text comprising a second language. A third module is adapted to receive outputs from the first and second dependent module and performs prosodic and phonetic context abstraction over the outputs based on multi-lingual text.
Abstract translation: 用于处理语音合成器的多语言文本的文本处理系统包括第一语言相关模块，用于对包括第一语言的输入文本的一部分执行文本和韵律分析中的至少一个。 第二语言相关模块在包括第二语言的输入文本的第二部分上执行文本和韵律分析中的至少一个。 第三模块适于接收来自第一和第二从属模块的输出，并且基于多语言文本在输出上执行韵律和语音上下文抽象。
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公开(公告)号：US06978239B2
公开(公告)日：2005-12-20
申请号：US09850527
申请日：2001-05-07
CPC classification number: G10L13/07
Abstract: A speech synthesizer is provided that concatenates stored samples of speech units without modifying the prosody of the samples. The present invention is able to achieve a high level of naturalness in synthesized speech with a carefully designed training speech corpus by storing samples based on the prosodic and phonetic context in which they occur. In particular, some embodiments of the present invention limit the training text to those sentences that will produce the most frequent sets of prosodic contexts for each speech unit. Further embodiments of the present invention also provide a multi-tier selection mechanism for selecting a set of samples that will produce the most natural sounding speech.
Abstract translation: 提供语音合成器，其连接所存储的语音单元的样本，而不修改样本的韵律。 本发明通过存储基于他们发生的韵律和语音语境的样本，能够通过精心设计的训练语音语料库来实现合成语音的高水平的自然性。 特别地，本发明的一些实施例将训练文本限制于将为每个语音单元产生最频繁的韵律上下文集合的句子。 本发明的另外的实施例还提供了一种用于选择将产生最自然的声音语音的一组样本的多层选择机制。
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公开(公告)号：US20130183439A1
公开(公告)日：2013-07-18
申请号：US13351759
申请日：2012-01-17
Applicant: John A. Starkovich , Edward M. Silverman , Hsiao-Hu Peng
Inventor： John A. Starkovich , Edward M. Silverman , Hsiao-Hu Peng
CPC classification number: H01B13/0036 , B05D5/12 , B05D7/20 , B05D2256/00 , C23C14/00 , C23C14/48 , H01B1/04
Abstract: A method includes the steps of receiving a conductor element formed from a plurality of carbon nanotubes; and exposing the conductor element to a controlled amount of a dopant so as to increase the conductance of the conductor element to a desired value, wherein the dopant is one of bromine, iodine, chloroauric acid, hydrochloric acid, hydroiodic acid, nitric acid, and potassium tetrabromoaurate. A method includes the steps of receiving a conductor element formed from a plurality of carbon nanotubes; and exposing the conductor element to a controlled amount of a dopant solution comprising one of chloroauric acid, hydrochloric acid, nitric acid, and potassium tetrabromoaurate, so as to increase the conductance of the conductor element to a desired value.
Abstract translation: 一种方法包括以下步骤：接收由多个碳纳米管形成的导体元件; 并且将导体元件暴露于受控量的掺杂剂，以便将导体元件的电导增加到所需值，其中掺杂剂是溴，碘，氯金酸，盐酸，氢碘酸，硝酸和 四溴月桂酸钾。 一种方法包括以下步骤：接收由多个碳纳米管形成的导体元件; 并且将导体元件暴露于受控量的包含氯金酸，盐酸，硝酸和四溴代钛酸钾之中的一种的掺杂剂溶液，以便将导体元件的电导率增加到期望值。
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5.发明申请SIGE HETEROJUNCTION BIPOLAR TRANSISTOR HAVING LOW COLLECTOR/BASE CAPACITANCE AND MANUFACTURING METHOD OF THE SAME 有权具有低收集器/基极电容的异常双极双极晶体管及其制造方法公开(公告)号：US20120098039A1
公开(公告)日：2012-04-26
申请号：US13280226
申请日：2011-10-24
Applicant: Yan Miu , Changwa Yao , Hu Peng
Inventor： Yan Miu , Changwa Yao , Hu Peng
IPC: H01L29/737 , H01L21/331
CPC classification number: H01L29/7371 , H01L29/0649 , H01L29/66242
Abstract: A SiGe HBT having low collector-base capacitance is disclosed, which includes: a silicon substrate, including isolation trenches, a collector region situated between the isolation trenches, and lateral trenches; a SiGe base layer formed on the silicon substrate; and an emitter region formed on the SiGe base layer. Each lateral trench is situated in the collector region on one side of an isolation trench, and is connected to the isolation trench. Moreover, a manufacturing method of a SiGe HBT having low collector-base capacitance is disclosed, which includes: performing ion implantation to predetermined regions in a silicon substrate before trench isolations are formed; forming lateral trenches by etching ion implantation regions after the trench isolations are formed; then forming a SiGe HBT device by an ordinary semiconductor process. The present invention can reduce the collector-base capacitance and therefore improve high-frequency characteristics of the device.
Abstract translation: 公开了一种具有低集电极 - 基极电容的SiGe HBT，其包括：硅衬底，包括隔离沟槽，位于隔离沟槽之间的集电极区域和横向沟槽; 形成在硅衬底上的SiGe基层; 以及形成在SiGe基极层上的发射极区域。 每个横向沟槽位于隔离沟槽的一侧上的集电极区域中，并且连接到隔离沟槽。 此外，公开了具有低集电极 - 基极电容的SiGe HBT的制造方法，其包括：在形成沟槽隔离之前对硅衬底中的预定区域进行离子注入; 在形成沟槽隔离之后通过蚀刻离子注入区形成横向沟槽; 然后通过普通半导体工艺形成SiGe HBT器件。 本发明可以降低集电极基极电容，从而提高器件的高频特性。
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Patent Agency Ranking
公开(公告)号：US20090251105A1
公开(公告)日：2009-10-08
申请号：US12203150
申请日：2008-09-03
Applicant: Hu Peng , Haiqing Li
Inventor： Hu Peng , Haiqing Li
IPC: H02J7/00
CPC classification number: F24F11/30 , F24F11/65 , F24F2110/10
Abstract: A temperature controller is disclosed in the invention, and the temperature controller includes one dry battery, a voltage conversion circuit connected with outputs of the battery and a temperature controller control circuit connected with the voltage conversion circuit. The voltage conversion circuit provides a power supply for the temperature controller control circuit. The temperature controller in the invention requires only one battery as the power supply, so that energies are saved, and the temperature controller is reduced in size and can be mounted more easily.
Abstract translation: 在本发明中公开了一种温度控制器，温度控制器包括一个干电池，与电池的输出连接的电压转换电路和与电压转换电路连接的温度控制器控制电路。 电压转换电路为温度控制器控制电路提供电源。 本发明的温度控制器仅需要一个电池作为电源，从而节省能量，并且温度控制器的尺寸减小并且可以更容易地安装。
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7.发明授权公开(公告)号：US07386451B2
公开(公告)日：2008-06-10
申请号：US10660388
申请日：2003-09-11
Abstract: A method is provided for optimizing an objective measure used to estimate mean opinion score or naturalness of synthesized speech from a speech synthesizer. The method includes using an objective measure that has components derived directly from textual information used to form synthesized utterances. The objective measure has a high correlation with mean opinion score such that a relationship can be formed between the objective measure and corresponding mean opinion score. The objective measure is altered to provide a different function of textual information derived from the utterances so as to improve the relationship between the scores of the objective measure and subjective ratings of the synthesized utterances.
Abstract translation: 提供了一种用于优化用于估计来自语音合成器的合成语音的平均意见分数或自然度的客观测量的方法。 该方法包括使用具有直接从用于形成合成话语的文本信息导出的成分的客观度量。 客观量度与平均意见分数具有很高的相关性，从而可以在客观量度和相应的平均意见得分之间形成关系。 改变客观量度以提供从话语中得出的文本信息的不同功能，以改善客观测量的分数与合成话语的主观评级之间的关系。
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公开(公告)号：US5354488A
公开(公告)日：1994-10-11
申请号：US957693
申请日：1992-10-07
Applicant: Emil M. Shtarkman , John A. Starkovich , William W. Davison , Hsiao-Hu Peng , Thomas J. Fitzgerald
Inventor： Emil M. Shtarkman , John A. Starkovich , William W. Davison , Hsiao-Hu Peng , Thomas J. Fitzgerald
Abstract: A rheological fluid composition which is responsive to a magnetic field. The composition comprises a vehicle, magnetizable particles suspended in the vehicle and a dispersant. The dispersant comprises particles having no dimension greater than 10 nanometers. The dispersant is preferably carbon.
Abstract translation: 响应于磁场的流变液组合物。 组合物包含载体，悬浮在载体中的可磁化颗粒和分散剂。 分散剂包括没有尺寸大于10纳米的颗粒。 分散剂优选为碳。
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公开(公告)号：US08808792B2
公开(公告)日：2014-08-19
申请号：US13351759
申请日：2012-01-17
Applicant: John A. Starkovich , Edward M. Silverman , Hsiao-Hu Peng
Inventor： John A. Starkovich , Edward M. Silverman , Hsiao-Hu Peng
CPC classification number: H01B13/0036 , B05D5/12 , B05D7/20 , B05D2256/00 , C23C14/00 , C23C14/48 , H01B1/04
Abstract: A method includes the steps of receiving a conductor element formed from a plurality of carbon nanotubes; and exposing the conductor element to a controlled amount of a dopant so as to increase the conductance of the conductor element to a desired value, wherein the dopant is one of bromine, iodine, chloroauric acid, hydrochloric acid, hydroiodic acid, nitric acid, and potassium tetrabromoaurate. A method includes the steps of receiving a conductor element formed from a plurality of carbon nanotubes; and exposing the conductor element to a controlled amount of a dopant solution comprising one of chloroauric acid, hydrochloric acid, nitric acid, and potassium tetrabromoaurate, so as to increase the conductance of the conductor element to a desired value.
Abstract translation: 一种方法包括以下步骤：接收由多个碳纳米管形成的导体元件; 并且将导体元件暴露于受控量的掺杂剂，以便将导体元件的电导增加到所需值，其中掺杂剂是溴，碘，氯金酸，盐酸，氢碘酸，硝酸和 四溴月桂酸钾。 一种方法包括以下步骤：接收由多个碳纳米管形成的导体元件; 并且将导体元件暴露于受控量的包含氯金酸，盐酸，硝酸和四溴代钛酸钾之中的一种的掺杂剂溶液，以便将导体元件的电导率增加到期望值。
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10.发明授权SiGe heterojunction bipolar transistor having low collector/base capacitance and manufacturing method of the same 有权具有低集电极/基极电容的SiGe异质结双极晶体管及其制造方法公开(公告)号：US08754450B2
公开(公告)日：2014-06-17
申请号：US13280226
申请日：2011-10-24
Applicant: Yan Miu , Changwa Yao , Hu Peng
Inventor： Yan Miu , Changwa Yao , Hu Peng
IPC: H01L29/737 , H01L21/331
CPC classification number: H01L29/7371 , H01L29/0649 , H01L29/66242
Abstract: A SiGe HBT having low collector-base capacitance is disclosed, which includes: a silicon substrate, including isolation trenches, a collector region situated between the isolation trenches, and lateral trenches; a SiGe base layer formed on the silicon substrate; and an emitter region formed on the SiGe base layer. Each lateral trench is situated in the collector region on one side of an isolation trench, and is connected to the isolation trench. Moreover, a manufacturing method of a SiGe HBT having low collector-base capacitance is disclosed, which includes: performing ion implantation to predetermined regions in a silicon substrate before trench isolations are formed; forming lateral trenches by etching ion implantation regions after the trench isolations are formed; then forming a SiGe HBT device by an ordinary semiconductor process. The present invention can reduce the collector-base capacitance and therefore improve high-frequency characteristics of the device.
Abstract translation: 公开了一种具有低集电极 - 基极电容的SiGe HBT，其包括：硅衬底，包括隔离沟槽，位于隔离沟槽之间的集电极区域和横向沟槽; 形成在硅衬底上的SiGe基层; 以及形成在SiGe基极层上的发射极区域。 每个横向沟槽位于隔离沟槽的一侧上的集电极区域中，并且连接到隔离沟槽。 此外，公开了具有低集电极 - 基极电容的SiGe HBT的制造方法，其包括：在形成沟槽隔离之前对硅衬底中的预定区域进行离子注入; 在形成沟槽隔离之后通过蚀刻离子注入区形成横向沟槽; 然后通过普通半导体工艺形成SiGe HBT器件。 本发明可以降低集电极基极电容，从而提高器件的高频特性。
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