公开(公告)号：US06344777B1

公开(公告)日：2002-02-05

申请号：US09618391

申请日：2000-07-18

申请人： Daisy L. Ingram ,  Yaochung Chen ,  William M. Brunner ,  Huan-Chun Yen

发明人： Daisy L. Ingram ,  Yaochung Chen ,  William M. Brunner ,  Huan-Chun Yen

IPC分类号： H03F368

CPC分类号： H03F3/602

摘要： Greater levels of microwave and millimeter microwave frequency power is achieved in a new power amplifier structure in which sixteen MMIC amplifiers are supported in a 4×4 row by column matrix and the output (and input) manifold is of a “crazy-H” power combining structure. Even greater output power, on the order of 100 watts at 35 GHz, is achieved by combining multiple numbers of such power amplifier units through a radial combiner.

摘要翻译： 在一个新的功率放大器结构中实现了更高水平的微波和毫米微波频率功率，其中十六个MMIC放大器以4×4行列式支持，并且输出（和输入）歧管是“疯狂H”功率组合结构 。 通过组合多个这样的功率放大器单元通过径向组合器实现更大的输出功率，在35GHz时为100瓦特。

公开(公告)号：US06259335B1

公开(公告)日：2001-07-10

申请号：US09371396

申请日：1999-08-10

申请人： Daisy L. Ingram ,  Huan-Chun Yen ,  Yaochung Chen

发明人： Daisy L. Ingram ,  Huan-Chun Yen ,  Yaochung Chen

IPC分类号： H01P308

CPC分类号： H03F1/565 ,  H01P5/028 ,  H01P5/12 ,  H03F3/604

摘要： An umbrella-shaped matching network (10, 14, 16) for matching phase and impedance in a power amplifier (2). The matching network (10, 14, 16) employs rounded corners (22). The rounded corners (22) reduce microwave signal scattering losses, because they are less prone to signal radiation than square corner power combining networks. The matching network (10, 14, 16) includes slits (24) defining separated arms (26). The slits (24) are positioned in such a way that they provide phase and amplitude balance for the signal presented to the amplifiers (2). The slits (24) also prevent current from traveling transversely.

摘要翻译： 一种用于在功率放大器（2）中匹配相位和阻抗的伞形匹配网络（10,14,16）。 匹配网络（10,14,16）使用圆角（22）。 圆角（22）减小了微波信号散射损失，因为它们比平方角功率组合网络更不容易发生信号辐射。 匹配网络（10,14,16）包括限定分离的臂（26）的狭缝（24）。 狭缝（24）以这样的方式定位，使得它们为呈现给放大器（2）的信号提供相位和幅度平衡。 狭缝（24）也防止电流横向行进。

公开(公告)号：US06201283B1

公开(公告)日：2001-03-13

申请号：US09391339

申请日：1999-09-08

申请人： Richard Lai ,  Yaochung Chen ,  Huan-Chun Yen ,  James C. K. Lau

发明人： Richard Lai ,  Yaochung Chen ,  Huan-Chun Yen ,  James C. K. Lau

IPC分类号： H01L2976

CPC分类号： H01L23/4821 ,  H01L29/42316 ,  H01L2924/0002 ,  H01L2924/3011 ,  H01L2924/00

摘要： A field effect transistor with a double sided airbridge comprises a substrate containing a conductive region and source, drain and gate electrodes disposed on the substrate. The gate electrode has a finger portion with a first end secured to the substrate between the source and drain electrodes and a second end, and a double sided airbridge portion flaring outwardly from the second end and having opposed first and second extremities. A first gate pad is disposed on said substrate outwardly from the source electrode and is connected to the first extremity. A second gate pad is disposed on said substrate outwardly from the drain electrodes and is connected to the second extremity. The gate pads serve to support the airbridge gate finger so as to reduce stress on the gate finger. The first and second gate pads receive and transmit signals through the airbridge and to and from the gate finger.

摘要翻译： 具有双面气桥的场效应晶体管包括含有导电区域的基板和设置在基板上的源极，漏极和栅电极。 栅电极具有手指部分，其第一端固定在源极和漏极之间的衬底上，第二端和从第二端向外扩张并具有相对的第一和第二端的双面气桥部分。 第一栅极焊盘从源电极向外设置在所述衬底上并连接到第一末端。 第二栅极焊盘从漏电极向外设置在所述衬底上，并连接到第二末端。 闸板用于支撑空中桥闸手指，以减轻闸手指的压力。 第一和第二栅极焊盘通过空中桥梁接收和传送信号，并且与门指接收和传送信号。

公开(公告)号：US5463275A

公开(公告)日：1995-10-31

申请号：US911581

申请日：1992-07-10

申请人： Chung-Hsu Chen ,  Huan-Chun Yen

发明人： Chung-Hsu Chen ,  Huan-Chun Yen

IPC分类号： H01J1/308 ,  H01J1/30

CPC分类号： H01J1/308

摘要： This invention discloses an emitter for a vacuum microelectronic device. The emitter includes a heterojunction step-doped barrier comprised of a first gallium arsenide region, an aluminum gallium arsenide region adjacent the first gallium arsenide region, and a second gallium arsenide region adjacent the aluminum gallium region and opposite to the first gallium arsenide region. The first gallium arsenide region includes a layer of heavily doped n-type gallium arsenide. The aluminum gallium arsenide region includes an intrinsic layer and a heavily doped p-type layer. The second gallium arsenide region includes a heavily doped p-type layer adjacent the aluminum gallium arsenide region, an intrinsic layer and a heavily doped n-type layer adjacent a vacuum region. In addition, a graded layer between the first gallium arsenide layer region and the aluminum gallium arsenide region is provided. Ohmic contacts are fabricated on the outer surfaces of the first gallium arsenide layer and the second gallium arsenide layer. An appropriate potential is applied across the ohmic contacts such that most of the electrons from the first gallium arsenide region have enough kinetic energy to transcend the vacuum barrier potential and be emitted into the vacuum region.

摘要翻译： 本发明公开了一种用于真空微电子器件的发射器。 发射极包括由第一砷化镓区域，与第一砷化镓区域相邻的砷化镓砷化镓区域和与铝镓区域相邻并与第一砷化镓区域相对的第二砷化镓区域的异质结阶跃掺杂势垒。 第一砷化镓区域包括重掺杂的n型砷化镓的层。 砷化镓铝区域包括本征层和重掺杂的p型层。 第二砷化镓区域包括与砷化铝砷化镓区域相邻的重掺杂p型层，邻近真空区域的本征层和重掺杂的n型层。 此外，提供了在第一砷化镓层区域和砷化镓镓区域之间的渐变层。 在第一砷化镓层和第二砷化镓层的外表面上制造欧姆接触。 在欧姆接触之间施加适当的电势，使得来自第一砷化镓区域的大部分电子具有足够的动能来超越真空势垒电位并被发射到真空区域。

公开(公告)号：US4583055A

公开(公告)日：1986-04-15

申请号：US566254

申请日：1983-12-28

申请人： Huan-Chun Yen ,  Danilo Radovich

发明人： Huan-Chun Yen ,  Danilo Radovich

IPC分类号： H03B9/14 ,  H03B25/00

CPC分类号： H03B9/143

摘要： The spatial power combiner disclosed here is used to efficiently combine the power sources, which incorporate two-terminal negative resistance devices, in a coherent manner such that a high power output with a stable and definite frequency and phase is obtained, the sources to be combined being arranged in an array configuration.

摘要翻译： 这里公开的空间功率合成器用于以相干的方式有效地组合并入两端负电阻器件的电源，从而获得具有稳定和确定的频率和相位的高功率输出，要组合的源 被布置成阵列配置。