Method for Preparing Biomedical Magnesium Alloy Wires

    公开(公告)号:US20250051886A1

    公开(公告)日:2025-02-13

    申请号:US18073097

    申请日:2024-08-26

    Abstract: The disclosure relates to the technical field of preparing the metal material of magnesium alloy, and particularly provides a method for preparing biomedical magnesium alloy wires. The magnesium, zinc, and neodymium alloys are subject to smelting, casting, rolling, and other processes to prepare plates. The plates are subjected to a special mechanical stirring process to prepare a processing zone with the same thickness as the plates. After machining, the processing zone is used as the final product of the wire or drawn in multiple passes to finally form the wire with the required diameter. By introducing rolling and mechanical stirring processes, the disclosure improves the forming property of the wire, so that the alloy grains are significantly refined, the size of the second phase is greatly reduced and most of them are solid-soluble in the matrix, the strength of the obtained wire, and especially the elongation, is greatly improved, and better corrosion resistance is obtained, which meet the performance requirements of medical magnesium alloy wire.

    Coating method for continuous preparation of diamond thin film with HFCVD device

    公开(公告)号:US11939669B2

    公开(公告)日:2024-03-26

    申请号:US17627754

    申请日:2019-11-26

    CPC classification number: C23C16/271 C23C16/4587 C23C16/52 C23C16/54

    Abstract: A coating method for preparing diamond thin film continuously by HFCVD device includes the steps of: (a) carbonizing left and right chamber hot filaments; (b) disposing a substrate on a platform along with a trolley in a sample access chamber under vacuum condition; opening a left chamber gate valve and moving the substrate to left thin film growth chamber; closing the left chamber gate valve to grow diamond thin film on the substrate; (c) repeating step (b) by using a right chamber gate valve and right thin film growth chamber to grow diamond thin film; (d) opening the left chamber gate valve and moving the substrate to the sample access chamber; closing the left chamber gate valve and dropping to room temperature while under vacuum condition; releasing the vacuum condition and taking out the substrate with diamond thin film; (e) repeating step (d) for the right chamber gate valve.

    Method for Continuously Preparing Graphene Oxide Nanoplatelet

    公开(公告)号:US20190112195A1

    公开(公告)日:2019-04-18

    申请号:US16087922

    申请日:2017-03-22

    Abstract: Provided is a method for continuously preparing graphene oxide nanoplatelets by electrochemical treatment, comprising using a continuous graphite product, successively processing two step treatments, i.e. an electrochemical intercalation and an electrolytic oxidation stripping. The electrochemical intercalation is carried out in a concentrated acid, using a graphite material as an anode and energizing under a soaking condition such that acid radical ions enter into graphite interlamination under the drive of an electric field, to form an intercalated graphite continuous material with first-order or low-order intercalation. The electrolytic stripping is using the intercalated continuous graphite material as an anode, energizing in an aqueous electrolyte solution, and performing oxidation stripping. The method has the following advantages: a product does not contain a metal impurity, the oxidation degree of graphene is controllable, the process is continuable and automatable, and the method is safe and has low emissions, etc.

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