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    Memory system, memory test system and method of testing memory system and memory test system
    1.
    发明授权
    Memory system, memory test system and method of testing memory system and memory test system 有权
    内存系统，内存测试系统和测试内存系统和内存测试系统的方法

    公开(公告)号：US08750061B2

    公开(公告)日：2014-06-10

    申请号：US13235162

    申请日：2011-09-16

    申请人： Soo-Haeng Cho ,  Ki-jae Song ,  Sung-dong Suh ,  Kyoung-ho Ha ,  Seong-gu Kim ,  Yeoung-kum Kim ,  In-sung Joe

    发明人： Soo-Haeng Cho ,  Ki-jae Song ,  Sung-dong Suh ,  Kyoung-ho Ha ,  Seong-gu Kim ,  Yeoung-kum Kim ,  In-sung Joe

    IPC分类号： G11C7/00 ,  G11C29/00 ,  G01R31/308

    CPC分类号： G11C29/56 ,  G11C29/56012 ,  G11C2029/5602 ,  Y10T29/49004

    摘要： A memory test system is disclosed. The memory system includes a memory device, a tester generating a clock signal and a test signal for testing the memory device, and an optical splitting module. The optical splitting module comprises an electrical-optical signal converting unit which converts each of the clock signal and the test signal into an optical signal to output the clock signal and the test signal as an optical clock signal and an optical test signal. The optical splitting unit further comprises an optical signal splitting unit which splits each of the optical clock signal and the optical test signal into n signals (n being at least two), and an optical-electrical signal converting unit which receives the split optical clock signal and the split optical test signal to convert the split optical clock signal and the split optical test signal into electrical signals used in the memory device.

    摘要翻译： 记录测试系统被公开。 存储器系统包括存储器件，产生时钟信号的测试器和用于测试存储器件的测试信号，以及光分离模块。 光分路模块包括电光信号转换单元，其将时钟信号和测试信号中的每一个转换为光信号，以输出时钟信号和测试信号作为光时钟信号和光测试信号。 光分路单元还包括光信号分离单元，其将每个光时钟信号和光测试信号分解为n个信号（n至少为2个）;以及光电信号转换单元，其接收分离的光时钟信号 以及分离的光学测试信号，以将分离的光时钟信号和分割的光学测试信号转换成在存储器件中使用的电信号。

    Information storage devices using magnetic domain wall motion and methods of operating the same
    3.
    发明授权
    Information storage devices using magnetic domain wall motion and methods of operating the same 失效
    使用磁畴壁运动的信息存储设备及其操作方法

    公开(公告)号：US07855908B2

    公开(公告)日：2010-12-21

    申请号：US12213856

    申请日：2008-06-25

    申请人： In-sung Joe ,  Yoon-dong Park ,  Seung-hoon Lee

    发明人： In-sung Joe ,  Yoon-dong Park ,  Seung-hoon Lee

    IPC分类号： G11C19/00

    CPC分类号： G11C19/0841 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/1675

    摘要： An information storage device using magnetic domain wall motion and a method of operating the same are provided. The information storage device includes a magnetic track having a plurality of magnetic domains and magnetic domain walls arranged alternately. A current supply unit is configured to apply current to the magnetic track, and a plurality of reading/writing units are arranged on the magnetic track. The information storage device further includes a plurality of storage units. Each of the plurality of storage units is connected to a corresponding one of the plurality of reading/writing units for storing data temporarily.

    摘要翻译： 提供了使用磁畴壁运动的信息存储装置及其操作方法。 信息存储装置包括具有多个交替设置的多个磁畴和磁畴壁的磁迹。 电流供给单元被配置为向磁道施加电流，并且在磁道上布置多个读/写单元。 信息存储装置还包括多个存储单元。 多个存储单元中的每一个连接到用于临时存储数据的多个读/写单元中的对应的一个。

    Nonvolatile memory devices and data reading methods
    4.
    发明授权
    Nonvolatile memory devices and data reading methods 有权
    非易失性存储器件和数据读取方法

    公开(公告)号：US07839694B2

    公开(公告)日：2010-11-23

    申请号：US12076706

    申请日：2008-03-21

    申请人： In-sung Joe ,  Young-gu Jin ,  Jae-woong Hyun ,  Yoon-dong Park

    发明人： In-sung Joe ,  Young-gu Jin ,  Jae-woong Hyun ,  Yoon-dong Park

    IPC分类号： G11C16/06

    CPC分类号： G11C16/3418

    摘要： Methods of reading memory cell data and nonvolatile memory devices, which apply a low voltage to memory cells adjacent to a memory cell from which data may be read are provided. Methods of reading memory cell data of nonvolatile memory device include applying a first voltage to a control gate of a read memory cell from among the plurality of memory cells, applying a third voltage to control gates of memory cell adjacent to the read memory cell, and applying a second voltage to control gates of memory cells other than the read memory cell and the adjacent memory cells.

    摘要翻译： 提供将存储单元数据和非易失性存储器件读取的方法，该存储单元数据和非易失性存储器件将低电压施加到与可读取数据的存储器单元相邻的存储器单元。 读取非易失性存储器件的存储单元数据的方法包括从多个存储器单元向读存储器单元的控制栅极施加第一电压，将第三电压施加到与读存储单元相邻的存储单元的控制栅极，以及 将第二电压施加到除了读存储器单元和相邻存储单元之外的存储单元的控制栅极。

    Distance measuring sensors including vertical photogate and three-dimensional color image sensors including distance measuring sensors
    5.
    发明授权
    Distance measuring sensors including vertical photogate and three-dimensional color image sensors including distance measuring sensors 有权
    距离测量传感器包括垂直光栅和三维彩色图像传感器，包括距离测量传感器

    公开(公告)号：US07626685B2

    公开(公告)日：2009-12-01

    申请号：US12222208

    申请日：2008-08-05

    申请人： Young-gu Jin ,  Yoon-dong Park ,  Won-joo Kim ,  Seung-hoon Lee ,  In-sung Joe

    发明人： Young-gu Jin ,  Yoon-dong Park ,  Won-joo Kim ,  Seung-hoon Lee ,  In-sung Joe

    IPC分类号： G01C3/08 ,  H01L31/062

    CPC分类号： G01C3/08 ,  G01S7/4863 ,  G01S17/89

    摘要： A distance measuring sensor may include: a photoelectric conversion region; first and second charge storage regions; first and second trenches; and/or first and second vertical photogates. The photoelectric conversion region may be in a substrate and/or may be doped with a first impurity in order to generate charges in response to received light. The first and second charge storage regions may be in the substrate and/or may be doped with a second impurity in order to collect charges. The first and second trenches may be formed to have depths in the substrate that correspond to the first and second charge storage regions, respectively. The first and second vertical photogates may be respectively in the first and second trenches. A three-dimensional color image sensor may include a plurality of unit pixels. Each unit pixel may include a plurality of color pixels and the distance measuring sensor.

    摘要翻译： 距离测量传感器可以包括：光电转换区域; 第一和第二电荷存储区域; 第一和第二壕沟; 和/或第一和第二垂直摄影门。 光电转换区域可以在衬底中和/或可以掺杂第一杂质，以响应于接收的光产生电荷。 第一和第二电荷存储区域可以在衬底中和/或可以掺杂第二杂质以便收集电荷。 第一沟槽和第二沟槽可以形成为分别对应于第一和第二电荷存储区域的衬底中的深度。 第一和第二垂直摄影门可以分别在第一和第二沟槽中。 三维彩色图像传感器可以包括多个单位像素。 每个单位像素可以包括多个彩色像素和距离测量传感器。

    Optical links, manufacturing methods thereof, and memory systems having the same
    7.
    发明授权
    Optical links, manufacturing methods thereof, and memory systems having the same 有权
    光链路，其制造方法和具有该光链路的存储系统

    公开(公告)号：US09176277B2

    公开(公告)日：2015-11-03

    申请号：US13549845

    申请日：2012-07-16

    申请人： Sung Dong Suh ,  In Sung Joe ,  Seong Gu Kim ,  Kyoung Won Na ,  Kyoung Ho Ha ,  Yong Hwack Shin

    发明人： Sung Dong Suh ,  In Sung Joe ,  Seong Gu Kim ,  Kyoung Won Na ,  Kyoung Ho Ha ,  Yong Hwack Shin

    IPC分类号： G02B6/12

    CPC分类号： H04B10/25 ,  G02B6/107 ,  G02B6/12004 ,  G02B6/12007 ,  G02B6/14 ,  G02B6/29344 ,  G02B6/2938 ,  Y10T29/49

    摘要： An optical link may include a main optical waveguide; N sub-optical waveguides, where N is a natural number; N mode couplers, each configured to perform a mode coupling operation between the main optical waveguide and a respective one of the N sub-optical waveguide; and an optical wavelength filter connected to an output terminal of the main optical waveguide and an output terminal of each of the N sub-optical waveguides. A memory system may include a memory device, a memory controller, and the optical link. A data processing system may include the memory system and a central processing unit connected to the memory system through a bus.

    摘要翻译： 光链路可以包括主光波导; N个子光波导，其中N是自然数; N模耦合器，其被配置为在所述主光波导与所述N个子光波导中的相应一个之间执行模式耦合操作; 以及连接到主光波导的输出端子和N个子光波导中的每一个的输出端子的光波长滤波器。 存储器系统可以包括存储器设备，存储器控制器和光学链路。 数据处理系统可以包括存储器系统和通过总线连接到存储器系统的中央处理单元。