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    Data storage devices using magnetic domain wall movement and methods of operating the same
    1.
    发明授权
    Data storage devices using magnetic domain wall movement and methods of operating the same 失效
    使用磁畴壁运动的数据存储设备和操作方法相同

    公开(公告)号：US08102692B2

    公开(公告)日：2012-01-24

    申请号：US12222504

    申请日：2008-08-11

    申请人： In-sung Joe ,  Yoon-dong Park ,  Seung-hoon Lee

    发明人： In-sung Joe ,  Yoon-dong Park ,  Seung-hoon Lee

    IPC分类号： G11C19/00

    CPC分类号： G11C19/0808 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/1675 ,  G11C11/1677 ,  Y10S977/933

    摘要： Data storage devices using movement of magnetic domain walls and methods of operating the same are provided. A data storage device includes a magnetic track having a verifying region. Within the verifying region, first and second magnetic domains are arranged alternately. The first magnetic domains correspond to first data and the second magnetic domains correspond to second data. A verification sensor is arranged at an end of the verifying region. A current applying element is configured to apply one or more pulse currents to the magnetic track. A first counter is connected to the verification sensor and configured to count the number of magnetic domains passing through the verification sensor.

    摘要翻译： 提供使用磁畴壁移动的数据存储装置及其操作方法。 数据存储装置包括具有验证区域的磁迹。 在验证区域内，交替排列第一和第二磁畴。 第一磁畴对应于第一数据，第二磁畴对应于第二数据。 验证传感器布置在验证区域的末端。 电流施加元件被配置为向磁道施加一个或多个脉冲电流。 第一计数器连接到验证传感器并且被配置为对通过验证传感器的磁畴的数量进行计数。

    Information storage devices using magnetic domain wall motion and methods of operating the same
    2.
    发明申请
    Information storage devices using magnetic domain wall motion and methods of operating the same 失效
    使用磁畴壁运动的信息存储设备及其操作方法

    公开(公告)号：US20090207718A1

    公开(公告)日：2009-08-20

    申请号：US12213856

    申请日：2008-06-25

    申请人： In-sung Joe ,  Yoon-dong Park ,  Seung-hoon Lee

    发明人： In-sung Joe ,  Yoon-dong Park ,  Seung-hoon Lee

    IPC分类号： G11B9/00

    CPC分类号： G11C19/0841 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/1675

    摘要： An information storage device using magnetic domain wall motion and a method of operating the same are provided. The information storage device includes a magnetic track having a plurality of magnetic domains and magnetic domain walls arranged alternately. A current supply unit is configured to apply current to the magnetic track, and a plurality of reading/writing units are arranged on the magnetic track. The information storage device further includes a plurality of storage units. Each of the plurality of storage units is connected to a corresponding one of the plurality of reading/writing units for storing data temporarily.

    摘要翻译： 提供了使用磁畴壁运动的信息存储装置及其操作方法。 信息存储装置包括具有多个交替设置的多个磁畴和磁畴壁的磁迹。 电流供给单元被配置为向磁道施加电流，并且在磁道上布置多个读/写单元。 信息存储装置还包括多个存储单元。 多个存储单元中的每一个连接到用于临时存储数据的多个读/写单元中的对应的一个。

    DISTANCE MEASURING SENSORS INCLUDING VERTICAL PHOTOGATE AND THREE-DIMENSIONAL COLOR IMAGE SENSORS INCLUDING DISTANCE MEASURING SENSORS
    3.
    发明申请
    DISTANCE MEASURING SENSORS INCLUDING VERTICAL PHOTOGATE AND THREE-DIMENSIONAL COLOR IMAGE SENSORS INCLUDING DISTANCE MEASURING SENSORS 有权
    距离测量传感器包括垂直光子和三维彩色图像传感器，包括距离测量传感器

    公开(公告)号：US20090244514A1

    公开(公告)日：2009-10-01

    申请号：US12222208

    申请日：2008-08-05

    申请人： Young-gu Jin ,  Yoon-dong Park ,  Woo-joo Kim ,  Seung-hoon Lee ,  In-sung Joe

    发明人： Young-gu Jin ,  Yoon-dong Park ,  Woo-joo Kim ,  Seung-hoon Lee ,  In-sung Joe

    IPC分类号： G01C3/08

    CPC分类号： G01C3/08 ,  G01S7/4863 ,  G01S17/89

    摘要： A distance measuring sensor may include: a photoelectric conversion region; first and second charge storage regions; first and second trenches; and/or first and second vertical photogates. The photoelectric conversion region may be in a substrate and/or may be doped with a first impurity in order to generate charges in response to received light. The first and second charge storage regions may be in the substrate and/or may be doped with a second impurity in order to collect charges. The first and second trenches may be formed to have depths in the substrate that correspond to the first and second charge storage regions, respectively. The first and second vertical photogates may be respectively in the first and second trenches. A three-dimensional color image sensor may include a plurality of unit pixels. Each unit pixel may include a plurality of color pixels and the distance measuring sensor.

    摘要翻译： 距离测量传感器可以包括：光电转换区域; 第一和第二电荷存储区域; 第一和第二壕沟; 和/或第一和第二垂直摄影门。 光电转换区域可以在衬底中和/或可以掺杂第一杂质，以响应于接收的光产生电荷。 第一和第二电荷存储区域可以在衬底中和/或可以掺杂第二杂质以便收集电荷。 第一沟槽和第二沟槽可以形成为分别对应于第一和第二电荷存储区域的衬底中的深度。 第一和第二垂直摄影门可以分别在第一和第二沟槽中。 三维彩色图像传感器可以包括多个单位像素。 每个单位像素可以包括多个彩色像素和距离测量传感器。

    Data storage devices using magnetic domain wall movement and methods of operating the same
    4.
    发明申请
    Data storage devices using magnetic domain wall movement and methods of operating the same 失效
    使用磁畴壁运动的数据存储设备和操作方法相同

    公开(公告)号：US20090207643A1

    公开(公告)日：2009-08-20

    申请号：US12222504

    申请日：2008-08-11

    申请人： In-sung Joe ,  Yoon-dong Park ,  Seung-hoon Lee

    发明人： In-sung Joe ,  Yoon-dong Park ,  Seung-hoon Lee

    IPC分类号： G11C19/02

    CPC分类号： G11C19/0808 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/1675 ,  G11C11/1677 ,  Y10S977/933

    摘要： Data storage devices using movement of magnetic domain walls and methods of operating the same are provided. A data storage device includes a magnetic track having a verifying region. Within the verifying region, first and second magnetic domains are arranged alternately. The first magnetic domains correspond to first data and the second magnetic domains correspond to second data. A verification sensor is arranged at an end of the verifying region. A current applying element is configured to apply one or more pulse currents to the magnetic track. A first counter is connected to the verification sensor and configured to count the number of magnetic domains passing through the verification sensor.

    摘要翻译： 提供使用磁畴壁移动的数据存储装置及其操作方法。 数据存储装置包括具有验证区域的磁迹。 在验证区域内，交替排列第一和第二磁畴。 第一磁畴对应于第一数据，第二磁畴对应于第二数据。 验证传感器布置在验证区域的末端。 电流施加元件被配置为向磁道施加一个或多个脉冲电流。 第一计数器连接到验证传感器并且被配置为对通过验证传感器的磁畴的数量进行计数。

    Information storage devices using magnetic domain wall motion and methods of operating the same
    5.
    发明授权
    Information storage devices using magnetic domain wall motion and methods of operating the same 失效
    使用磁畴壁运动的信息存储设备及其操作方法

    公开(公告)号：US07855908B2

    公开(公告)日：2010-12-21

    申请号：US12213856

    申请日：2008-06-25

    申请人： In-sung Joe ,  Yoon-dong Park ,  Seung-hoon Lee

    发明人： In-sung Joe ,  Yoon-dong Park ,  Seung-hoon Lee

    IPC分类号： G11C19/00

    CPC分类号： G11C19/0841 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/1675

    摘要： An information storage device using magnetic domain wall motion and a method of operating the same are provided. The information storage device includes a magnetic track having a plurality of magnetic domains and magnetic domain walls arranged alternately. A current supply unit is configured to apply current to the magnetic track, and a plurality of reading/writing units are arranged on the magnetic track. The information storage device further includes a plurality of storage units. Each of the plurality of storage units is connected to a corresponding one of the plurality of reading/writing units for storing data temporarily.

    摘要翻译： 提供了使用磁畴壁运动的信息存储装置及其操作方法。 信息存储装置包括具有多个交替设置的多个磁畴和磁畴壁的磁迹。 电流供给单元被配置为向磁道施加电流，并且在磁道上布置多个读/写单元。 信息存储装置还包括多个存储单元。 多个存储单元中的每一个连接到用于临时存储数据的多个读/写单元中的对应的一个。

    Distance measuring sensors including vertical photogate and three-dimensional color image sensors including distance measuring sensors
    6.
    发明授权
    Distance measuring sensors including vertical photogate and three-dimensional color image sensors including distance measuring sensors 有权
    距离测量传感器包括垂直光栅和三维彩色图像传感器，包括距离测量传感器

    公开(公告)号：US07626685B2

    公开(公告)日：2009-12-01

    申请号：US12222208

    申请日：2008-08-05

    申请人： Young-gu Jin ,  Yoon-dong Park ,  Won-joo Kim ,  Seung-hoon Lee ,  In-sung Joe

    发明人： Young-gu Jin ,  Yoon-dong Park ,  Won-joo Kim ,  Seung-hoon Lee ,  In-sung Joe

    IPC分类号： G01C3/08 ,  H01L31/062

    CPC分类号： G01C3/08 ,  G01S7/4863 ,  G01S17/89

    摘要： A distance measuring sensor may include: a photoelectric conversion region; first and second charge storage regions; first and second trenches; and/or first and second vertical photogates. The photoelectric conversion region may be in a substrate and/or may be doped with a first impurity in order to generate charges in response to received light. The first and second charge storage regions may be in the substrate and/or may be doped with a second impurity in order to collect charges. The first and second trenches may be formed to have depths in the substrate that correspond to the first and second charge storage regions, respectively. The first and second vertical photogates may be respectively in the first and second trenches. A three-dimensional color image sensor may include a plurality of unit pixels. Each unit pixel may include a plurality of color pixels and the distance measuring sensor.

    摘要翻译： 距离测量传感器可以包括：光电转换区域; 第一和第二电荷存储区域; 第一和第二壕沟; 和/或第一和第二垂直摄影门。 光电转换区域可以在衬底中和/或可以掺杂第一杂质，以响应于接收的光产生电荷。 第一和第二电荷存储区域可以在衬底中和/或可以掺杂第二杂质以便收集电荷。 第一沟槽和第二沟槽可以形成为分别对应于第一和第二电荷存储区域的衬底中的深度。 第一和第二垂直摄影门可以分别在第一和第二沟槽中。 三维彩色图像传感器可以包括多个单位像素。 每个单位像素可以包括多个彩色像素和距离测量传感器。

    Resistive memory device for programming resistance conversion layers and method thereof
    7.
    发明授权
    Resistive memory device for programming resistance conversion layers and method thereof 有权
    用于编程电阻转换层的电阻式存储器件及其方法

    公开(公告)号：US07940547B2

    公开(公告)日：2011-05-10

    申请号：US12379158

    申请日：2009-02-13

    申请人： Seung-hoon Lee ,  Yoon-dong Park ,  Young-soo Park ,  Myung-jae Lee

    发明人： Seung-hoon Lee ,  Yoon-dong Park ,  Young-soo Park ,  Myung-jae Lee

    IPC分类号： G11C11/00 ,  G11C17/00

    CPC分类号： G11C13/0007 ,  G11C13/0064 ,  G11C13/0069 ,  G11C2013/009 ,  G11C2013/0092 ,  G11C2213/32

    摘要： Example embodiments provide a method for programming a resistive memory device that includes a resistance conversion layer. The method may include applying multiple pulses to the resistance conversion layer. The multiple pulses may include at least two pulses, where a magnitude of each pulse of the at least two pulses is the same. A first pulse of the at least two pulses may be applied on one side of the resistance conversion layer and a second pulse of the at least two pulses may be applied on the other side of the resistance conversion layer. The applying step may be performed during a set programming operation or a reset programming operation. A resistive memory device for programming a resistance conversion layer may include a first and second electrode, a lower structure, and the resistance conversion layer coupled between the first and second electrodes. The resistance conversion layer may be configured to receive multiple pulses, where the multiple pulses include at least two pulses having the same magnitude.

    摘要翻译： 示例性实施例提供了一种用于对包括电阻转换层的电阻式存储器件进行编程的方法。 该方法可以包括将多个脉冲施加到电阻转换层。 多个脉冲可以包括至少两个脉冲，其中至少两个脉冲的每个脉冲的幅度相同。 至少两个脉冲的第一脉冲可以施加在电阻转换层的一侧，并且至少两个脉冲的第二脉冲可以施加在电阻转换层的另一侧上。 施加步骤可以在设定的编程操作或复位编程操作期间执行。 用于编程电阻转换层的电阻性存储器件可以包括第一和第二电极，下部结构以及耦合在第一和第二电极之间的电阻转换层。 电阻转换层可以被配置为接收多个脉冲，其中多个脉冲包括具有相同幅度的至少两个脉冲。