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    Nonvolatile memory devices and data reading methods
    1.
    发明授权
    Nonvolatile memory devices and data reading methods 有权
    非易失性存储器件和数据读取方法

    公开(公告)号：US07839694B2

    公开(公告)日：2010-11-23

    申请号：US12076706

    申请日：2008-03-21

    申请人： In-sung Joe ,  Young-gu Jin ,  Jae-woong Hyun ,  Yoon-dong Park

    发明人： In-sung Joe ,  Young-gu Jin ,  Jae-woong Hyun ,  Yoon-dong Park

    IPC分类号： G11C16/06

    CPC分类号： G11C16/3418

    摘要： Methods of reading memory cell data and nonvolatile memory devices, which apply a low voltage to memory cells adjacent to a memory cell from which data may be read are provided. Methods of reading memory cell data of nonvolatile memory device include applying a first voltage to a control gate of a read memory cell from among the plurality of memory cells, applying a third voltage to control gates of memory cell adjacent to the read memory cell, and applying a second voltage to control gates of memory cells other than the read memory cell and the adjacent memory cells.

    摘要翻译： 提供将存储单元数据和非易失性存储器件读取的方法，该存储单元数据和非易失性存储器件将低电压施加到与可读取数据的存储器单元相邻的存储器单元。 读取非易失性存储器件的存储单元数据的方法包括从多个存储器单元向读存储器单元的控制栅极施加第一电压，将第三电压施加到与读存储单元相邻的存储单元的控制栅极，以及 将第二电压施加到除了读存储器单元和相邻存储单元之外的存储单元的控制栅极。

    Nonvolatile memory devices and data reading methods
    2.
    发明申请
    Nonvolatile memory devices and data reading methods 有权
    非易失性存储器件和数据读取方法

    公开(公告)号：US20090052239A1

    公开(公告)日：2009-02-26

    申请号：US12076706

    申请日：2008-03-21

    申请人： In-sung Joe ,  Young-gu Jin ,  Jae-woong Hyun ,  Yoon-dong Park

    发明人： In-sung Joe ,  Young-gu Jin ,  Jae-woong Hyun ,  Yoon-dong Park

    IPC分类号： G11C16/28

    CPC分类号： G11C16/3418

    摘要： Methods of reading memory cell data and nonvolatile memory devices, which apply a low voltage to memory cells adjacent to a memory cell from which data may be read are provided. Methods of reading memory cell data of nonvolatile memory device include applying a first voltage to a control gate of a read memory cell from among the plurality of memory cells, applying a third voltage to control gates of memory cell adjacent to the read memory cell, and applying a second voltage to control gates of memory cells other than the read memory cell and the adjacent memory cells.

    摘要翻译： 提供将存储单元数据和非易失性存储器件读取的方法，该存储单元数据和非易失性存储器件将低电压施加到与可读取数据的存储器单元相邻的存储器单元。 读取非易失性存储器件的存储单元数据的方法包括从多个存储器单元向读存储器单元的控制栅极施加第一电压，将第三电压施加到与读存储单元相邻的存储单元的控制栅极，以及 将第二电压施加到除了读存储器单元和相邻存储单元之外的存储单元的控制栅极。

    Distance measuring sensors including vertical photogate and three-dimensional color image sensors including distance measuring sensors
    3.
    发明授权
    Distance measuring sensors including vertical photogate and three-dimensional color image sensors including distance measuring sensors 有权
    距离测量传感器包括垂直光栅和三维彩色图像传感器，包括距离测量传感器

    公开(公告)号：US07626685B2

    公开(公告)日：2009-12-01

    申请号：US12222208

    申请日：2008-08-05

    申请人： Young-gu Jin ,  Yoon-dong Park ,  Won-joo Kim ,  Seung-hoon Lee ,  In-sung Joe

    发明人： Young-gu Jin ,  Yoon-dong Park ,  Won-joo Kim ,  Seung-hoon Lee ,  In-sung Joe

    IPC分类号： G01C3/08 ,  H01L31/062

    CPC分类号： G01C3/08 ,  G01S7/4863 ,  G01S17/89

    摘要： A distance measuring sensor may include: a photoelectric conversion region; first and second charge storage regions; first and second trenches; and/or first and second vertical photogates. The photoelectric conversion region may be in a substrate and/or may be doped with a first impurity in order to generate charges in response to received light. The first and second charge storage regions may be in the substrate and/or may be doped with a second impurity in order to collect charges. The first and second trenches may be formed to have depths in the substrate that correspond to the first and second charge storage regions, respectively. The first and second vertical photogates may be respectively in the first and second trenches. A three-dimensional color image sensor may include a plurality of unit pixels. Each unit pixel may include a plurality of color pixels and the distance measuring sensor.

    摘要翻译： 距离测量传感器可以包括：光电转换区域; 第一和第二电荷存储区域; 第一和第二壕沟; 和/或第一和第二垂直摄影门。 光电转换区域可以在衬底中和/或可以掺杂第一杂质，以响应于接收的光产生电荷。 第一和第二电荷存储区域可以在衬底中和/或可以掺杂第二杂质以便收集电荷。 第一沟槽和第二沟槽可以形成为分别对应于第一和第二电荷存储区域的衬底中的深度。 第一和第二垂直摄影门可以分别在第一和第二沟槽中。 三维彩色图像传感器可以包括多个单位像素。 每个单位像素可以包括多个彩色像素和距离测量传感器。

    Methods of operating memory devices
    4.
    发明申请
    Methods of operating memory devices 有权
    操作存储设备的方法

    公开(公告)号：US20100008136A1

    公开(公告)日：2010-01-14

    申请号：US12458294

    申请日：2009-07-08

    申请人： Kwang-soo Seol ,  Sung-Il Park ,  Yoon-dong Park ,  Young-gu Jin ,  In-sung Joe

    发明人： Kwang-soo Seol ,  Sung-Il Park ,  Yoon-dong Park ,  Young-gu Jin ,  In-sung Joe

    IPC分类号： G11C16/06 ,  G11C16/04

    CPC分类号： G11C16/3454 ,  G11C11/5628 ,  G11C11/5642 ,  G11C16/0483 ,  G11C16/3418 ,  G11C16/3427 ,  G11C16/3459 ,  G11C2211/5621

    摘要： Provided are methods of operating NAND nonvolatile memory devices. The operating methods include applying a read voltage or a verify voltage to a selected memory cell from among a plurality of memory cells of a cell string to verify or read a programmed state of the selected memory cell; applying a first pass voltage to non-selected memory cells closest to the selected memory cell of the cell string; applying a second pass voltage to second closest non-selected memory cells to the selected memory cell; and applying a third pass voltage to other non-selected memory cells, where the first pass voltage is less than each of the second and third pass voltages and the second pass voltage is greater than the third pass voltage.

    摘要翻译： 提供了操作NAND非易失性存储器件的方法。 操作方法包括从单元串的多个存储单元中向所选存储单元施加读取电压或验证电压以验证或读取所选存储单元的编程状态; 对最靠近所述单元串的选定存储单元的未选择存储单元施加第一通过电压; 将第二通过电压施加到所选择的存储器单元的第二最近的未选择的存储器单元; 以及向其他未选择的存储单元施加第三通过电压，其中第一通过电压小于第二和第三通过电压中的每一个，并且第二通过电压大于第三通过电压。

    Near-infrared photodetectors, image sensors employing the same, and methods of manufacturing the same
    5.
    发明授权
    Near-infrared photodetectors, image sensors employing the same, and methods of manufacturing the same 有权
    近红外光电探测器，采用其的图像传感器及其制造方法

    公开(公告)号：US08193497B2

    公开(公告)日：2012-06-05

    申请号：US12656684

    申请日：2010-02-12

    申请人： Yoon-dong Park ,  David Andrew Barclay Miller ,  Young-gu Jin ,  In-sung Joe

    发明人： Yoon-dong Park ,  David Andrew Barclay Miller ,  Young-gu Jin ,  In-sung Joe

    IPC分类号： H01L27/148

    CPC分类号： H01L31/1804 ,  H01L31/107 ,  Y02E10/547 ,  Y02P70/521

    摘要： Silicon photodetectors using near-infrared dipole antennas. The photodetectors include a silicon region formed on a semiconductor substrate, dipole antenna forming two arms that are spaced apart with the silicon region therebetween and inducing an electromagnetic wave signal of incident light, and electrodes disposed in a vertical direction of the dipole antenna and spaced apart with the silicon region therebetween, where a critical bias voltage is applied to the electrodes to induce an avalanche gain operation in the silicon region.

    摘要翻译： 使用近红外偶极天线的硅光电探测器。 光电探测器包括形成在半导体衬底上的硅区，形成两个臂的偶极天线，两个臂与它们之间的硅区间隔开，并引起入射光的电磁波信号，以及设置在偶极子天线的垂直方向上并间隔开的电极 其间的硅区域，其中向电极施加临界偏置电压以在硅区域中引起雪崩增益操作。

    DISTANCE MEASURING SENSORS INCLUDING VERTICAL PHOTOGATE AND THREE-DIMENSIONAL COLOR IMAGE SENSORS INCLUDING DISTANCE MEASURING SENSORS
    6.
    发明申请
    DISTANCE MEASURING SENSORS INCLUDING VERTICAL PHOTOGATE AND THREE-DIMENSIONAL COLOR IMAGE SENSORS INCLUDING DISTANCE MEASURING SENSORS 有权
    距离测量传感器包括垂直光子和三维彩色图像传感器，包括距离测量传感器

    公开(公告)号：US20090244514A1

    公开(公告)日：2009-10-01

    申请号：US12222208

    申请日：2008-08-05

    申请人： Young-gu Jin ,  Yoon-dong Park ,  Woo-joo Kim ,  Seung-hoon Lee ,  In-sung Joe

    发明人： Young-gu Jin ,  Yoon-dong Park ,  Woo-joo Kim ,  Seung-hoon Lee ,  In-sung Joe

    IPC分类号： G01C3/08

    CPC分类号： G01C3/08 ,  G01S7/4863 ,  G01S17/89

    摘要： A distance measuring sensor may include: a photoelectric conversion region; first and second charge storage regions; first and second trenches; and/or first and second vertical photogates. The photoelectric conversion region may be in a substrate and/or may be doped with a first impurity in order to generate charges in response to received light. The first and second charge storage regions may be in the substrate and/or may be doped with a second impurity in order to collect charges. The first and second trenches may be formed to have depths in the substrate that correspond to the first and second charge storage regions, respectively. The first and second vertical photogates may be respectively in the first and second trenches. A three-dimensional color image sensor may include a plurality of unit pixels. Each unit pixel may include a plurality of color pixels and the distance measuring sensor.

    摘要翻译： 距离测量传感器可以包括：光电转换区域; 第一和第二电荷存储区域; 第一和第二壕沟; 和/或第一和第二垂直摄影门。 光电转换区域可以在衬底中和/或可以掺杂第一杂质，以响应于接收的光产生电荷。 第一和第二电荷存储区域可以在衬底中和/或可以掺杂第二杂质以便收集电荷。 第一沟槽和第二沟槽可以形成为分别对应于第一和第二电荷存储区域的衬底中的深度。 第一和第二垂直摄影门可以分别在第一和第二沟槽中。 三维彩色图像传感器可以包括多个单位像素。 每个单位像素可以包括多个彩色像素和距离测量传感器。

    Methods of operating memory devices
    9.
    发明授权
    Methods of operating memory devices 有权
    操作存储设备的方法

    公开(公告)号：US07995396B2

    公开(公告)日：2011-08-09

    申请号：US12458294

    申请日：2009-07-08

    申请人： Kwang-soo Seol ,  Sung-II Park ,  Yoon-dong Park ,  Young-gu Jin ,  In-sung Joe

    发明人： Kwang-soo Seol ,  Sung-II Park ,  Yoon-dong Park ,  Young-gu Jin ,  In-sung Joe

    IPC分类号： G11C11/34

    CPC分类号： G11C16/3454 ,  G11C11/5628 ,  G11C11/5642 ,  G11C16/0483 ,  G11C16/3418 ,  G11C16/3427 ,  G11C16/3459 ,  G11C2211/5621

    摘要： Provided are methods of operating NAND nonvolatile memory devices. The operating methods include applying a read voltage or a verify voltage to a selected memory cell from among a plurality of memory cells of a cell string to verify or read a programmed state of the selected memory cell; applying a first pass voltage to non-selected memory cells closest to the selected memory cell of the cell string; applying a second pass voltage to second closest non-selected memory cells to the selected memory cell; and applying a third pass voltage to other non-selected memory cells, where the first pass voltage is less than each of the second and third pass voltages and the second pass voltage is greater than the third pass voltage.

    摘要翻译： 提供了操作NAND非易失性存储器件的方法。 操作方法包括从单元串的多个存储单元中向所选存储单元施加读取电压或验证电压以验证或读取所选存储单元的编程状态; 对最靠近所述单元串的选定存储单元的未选择存储单元施加第一通过电压; 将第二通过电压施加到所选择的存储器单元的第二最近的未选择的存储器单元; 以及向其他未选择的存储单元施加第三通过电压，其中第一通过电压小于第二和第三通过电压中的每一个，并且第二通过电压大于第三通过电压。

    Information storage devices using magnetic domain wall motion and methods of operating the same
    10.
    发明授权
    Information storage devices using magnetic domain wall motion and methods of operating the same 失效
    使用磁畴壁运动的信息存储设备及其操作方法

    公开(公告)号：US07855908B2

    公开(公告)日：2010-12-21

    申请号：US12213856

    申请日：2008-06-25

    申请人： In-sung Joe ,  Yoon-dong Park ,  Seung-hoon Lee

    发明人： In-sung Joe ,  Yoon-dong Park ,  Seung-hoon Lee

    IPC分类号： G11C19/00

    CPC分类号： G11C19/0841 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/1675

    摘要： An information storage device using magnetic domain wall motion and a method of operating the same are provided. The information storage device includes a magnetic track having a plurality of magnetic domains and magnetic domain walls arranged alternately. A current supply unit is configured to apply current to the magnetic track, and a plurality of reading/writing units are arranged on the magnetic track. The information storage device further includes a plurality of storage units. Each of the plurality of storage units is connected to a corresponding one of the plurality of reading/writing units for storing data temporarily.

    摘要翻译： 提供了使用磁畴壁运动的信息存储装置及其操作方法。 信息存储装置包括具有多个交替设置的多个磁畴和磁畴壁的磁迹。 电流供给单元被配置为向磁道施加电流，并且在磁道上布置多个读/写单元。 信息存储装置还包括多个存储单元。 多个存储单元中的每一个连接到用于临时存储数据的多个读/写单元中的对应的一个。