公开(公告)号：US20130011969A1

公开(公告)日：2013-01-10

申请号：US13529820

申请日：2012-06-21

Applicant: Kuang-Jung CHEN ,  Isaac Wing-Tak CHAN

Inventor： Kuang-Jung CHEN ,  Isaac Wing-Tak CHAN

IPC: H01L21/78

CPC classification number: H01L51/003 ,  H01L51/0097 ,  H01L2227/326 ,  H01L2251/5338 ,  H01L2251/566

Abstract: The disclosure provides a method for fabricating the flexible electronic devices, including: providing a first rigid carrier substrate and a second rigid carrier substrate, wherein at least one flexible electronic device is formed between the first rigid carrier substrate and the second rigid carrier substrate, and a plurality of first de-bonding areas, a first flexible substrate, the flexible electronic device, a second flexible substrate, a plurality of second de-bonding areas and the second rigid carrier substrate are formed on the first rigid carrier substrate; performing a first cutting step to cut through the first de-bonding areas; separating the first rigid carrier substrate from the first de-bonding areas; removing the first rigid carrier substrate from the first de-bonding areas; and performing a second cutting step to cut through the second de-bonding areas; separating and removing the second rigid carrier substrate from the second de-bonding areas.

Abstract translation: 本公开提供了一种制造柔性电子器件的方法，包括：提供第一刚性载体衬底和第二刚性载体衬底，其中在第一刚性载体衬底和第二刚性载体衬底之间形成至少一个柔性电子器件，以及 多个第一解除接合区域，第一柔性基板，柔性电子器件，第二柔性基板，多个第二解除接合区域和第二刚性载体基板形成在第一刚性载体基板上; 执行第一切割步骤以切割第一去粘合区域; 将第一刚性载体基板与第一去粘合区域分离; 从所述第一去粘合区域移除所述第一刚性载体衬底; 以及执行第二切割步骤以切割所述第二去粘合区域; 从第二去接合区域分离和去除第二刚性载体衬底。

公开(公告)号：US09256306B2

公开(公告)日：2016-02-09

申请号：US13439871

申请日：2012-04-05

Applicant: Isaac Wing-Tak Chan ,  Chen-Wei Lin ,  Chih-Chieh Hsu

Inventor： Isaac Wing-Tak Chan ,  Chen-Wei Lin ,  Chih-Chieh Hsu

IPC: G06F3/041

CPC classification number: G06F3/041 ,  G06F3/0412 ,  G06F3/0416

Abstract: A sensing apparatus including a first scan line, a second scan line, a readout line, a first sensing device and a second sensing device is provided. The first sensing device is coupled to the first scan line and the readout line, and senses a first energy, and outputs a first readout signal corresponding to the first energy to the readout line in response to a first scan signal on the first scan line. The first sensing device is reset in response to the first scan signal and a reference signal on the readout line. The first sensing device includes a first reset unit configured for resetting the first sensing device, where a first terminal of the first reset unit is coupled to the first scan line, and a control terminal of the first reset unit is coupled to the readout line. A driving method thereof is also provided.

Abstract translation: 提供了包括第一扫描线，第二扫描线，读出线，第一感测装置和第二感测装置的感测装置。 第一感测装置耦合到第一扫描线和读出线，并且感测第一能量，并且响应于第一扫描线上的第一扫描信号，将对应于第一能量的第一读出信号输出到读出线。 第一感测装置响应于第一扫描信号和读出线上的参考信号被复位。 第一感测装置包括第一复位单元，其被配置用于复位第一感测装置，其中第一复位单元的第一端耦合到第一扫描线，并且第一复位单元的控制端耦合到读出线。 还提供了其驱动方法。

公开(公告)号：US20130162587A1

公开(公告)日：2013-06-27

申请号：US13439871

申请日：2012-04-05

Applicant: Isaac Wing-Tak Chan ,  Chen-Wei Lin ,  Chih-Chieh Hsu

Inventor： Isaac Wing-Tak Chan ,  Chen-Wei Lin ,  Chih-Chieh Hsu

IPC: G06F3/044 ,  G06F3/042 ,  G06F3/041

CPC classification number: G06F3/041 ,  G06F3/0412 ,  G06F3/0416

Abstract: A sensing apparatus including a first scan line, a second scan line, a readout line, a first sensing device and a second sensing device is provided. The first sensing device is coupled to the first scan line and the readout line, and senses a first energy, and outputs a first readout signal corresponding to the first energy to the readout line in response to a first scan signal on the first scan line. The first sensing device is reset in response to the first scan signal and a reference signal on the readout line. The first sensing device includes a first reset unit configured for resetting the first sensing device, where a first terminal of the first reset unit is coupled to the first scan line, and a control terminal of the first reset unit is coupled to the readout line. A driving method thereof is also provided.

Abstract translation: 提供了包括第一扫描线，第二扫描线，读出线，第一感测装置和第二感测装置的感测装置。 第一感测装置耦合到第一扫描线和读出线，并且感测第一能量，并且响应于第一扫描线上的第一扫描信号，将对应于第一能量的第一读出信号输出到读出线。 第一感测装置响应于第一扫描信号和读出线上的参考信号被复位。 第一感测装置包括第一复位单元，其被配置用于复位第一感测装置，其中第一复位单元的第一端耦合到第一扫描线，并且第一复位单元的控制端耦合到读出线。 还提供了其驱动方法。

公开(公告)号：US20130050138A1

公开(公告)日：2013-02-28

申请号：US13348609

申请日：2012-01-11

Applicant: Isaac Wing-Tak Chan ,  Chen-Wei Lin ,  Chih-Chieh Hsu

Inventor： Isaac Wing-Tak Chan ,  Chen-Wei Lin ,  Chih-Chieh Hsu

IPC: G06F3/044

CPC classification number: G06F3/0421 ,  G06F3/044

Abstract: A sensing device including first and second scan lines, a readout line, first and second sensing units is provided. The first sensing unit is coupled to the first scan line, the second scan line, and the readout line and configured to sense a first energy. The first sensing unit outputs a first readout signal corresponding to the first energy to the readout line in response to a first scan signal on the first scan line. The second sensing unit is coupled to the second scan line and the readout line and configured to sense a second energy. The second sensing unit outputs a second readout signal corresponding to the second energy to the readout line in response to a second scan signal on the second scan line. The second scan signal works in cooperation with the first scan signal to reset the first sensing unit.

Abstract translation: 提供包括第一和第二扫描线的感测装置，读出线，第一和第二感测单元。 第一感测单元耦合到第一扫描线，第二扫描线和读出线，并且被配置为感测第一能量。 响应于第一扫描线上的第一扫描信号，第一感测单元将对应于第一能量的第一读出信号输出到读出线。 第二感测单元耦合到第二扫描线和读出线并且被配置为感测第二能量。 响应于第二扫描线上的第二扫描信号，第二感测单元将对应于第二能量的第二读出信号输出到读出线。 第二扫描信号与第一扫描信号协同工作，以复位第一感测单元。

公开(公告)号：US08557637B2

公开(公告)日：2013-10-15

申请号：US13529820

申请日：2012-06-21

Applicant: Kuang-Jung Chen ,  Isaac Wing-Tak Chan

Inventor： Kuang-Jung Chen ,  Isaac Wing-Tak Chan

IPC: H01L21/00 ,  H01L21/30

CPC classification number: H01L51/003 ,  H01L51/0097 ,  H01L2227/326 ,  H01L2251/5338 ,  H01L2251/566

Abstract: The disclosure provides a method for fabricating the flexible electronic devices, including: providing a first rigid carrier substrate and a second rigid carrier substrate, wherein at least one flexible electronic device is formed between the first rigid carrier substrate and the second rigid carrier substrate, and a plurality of first de-bonding areas, a first flexible substrate, the flexible electronic device, a second flexible substrate, a plurality of second de-bonding areas and the second rigid carrier substrate are formed on the first rigid carrier substrate; performing a first cutting step to cut through the first de-bonding areas; separating the first rigid carrier substrate from the first de-bonding areas; removing the first rigid carrier substrate from the first de-bonding areas; and performing a second cutting step to cut through the second de-bonding areas; separating and removing the second rigid carrier substrate from the second de-bonding areas.

Abstract translation: 本公开提供了一种制造柔性电子器件的方法，包括：提供第一刚性载体衬底和第二刚性载体衬底，其中在第一刚性载体衬底和第二刚性载体衬底之间形成至少一个柔性电子器件，以及 多个第一解除接合区域，第一柔性基板，柔性电子器件，第二柔性基板，多个第二解除接合区域和第二刚性载体基板形成在第一刚性载体基板上; 执行第一切割步骤以切割第一去粘合区域; 将第一刚性载体基板与第一去粘合区域分离; 从第一去粘合区域移除第一刚性载体衬底; 以及执行第二切割步骤以切割所述第二去粘合区域; 从第二去接合区域分离和去除第二刚性载体衬底。

公开(公告)号：US20120154335A1

公开(公告)日：2012-06-21

申请号：US12972548

申请日：2010-12-20

Applicant: Isaac Wing-Tak Chan

Inventor： Isaac Wing-Tak Chan

IPC: G06F3/042 ,  H01L31/20 ,  H01L33/00 ,  H01L31/0376

CPC classification number: H01L27/1214 ,  H01L31/12

Abstract: A photoelectric element including a transparent bottom electrode, a photosensitive layer, a first electrode, a second electrode and a transparent top electrode is provided. The photosensitive layer is located above the transparent bottom electrode. The first electrode and the second electrode are disposed on the photosensitive layer. The transparent top electrode is located above the photosensitive layer.

Abstract translation: 提供了包括透明底部电极，感光层，第一电极，第二电极和透明顶部电极的光电元件。 感光层位于透明底部电极的上方。 第一电极和第二电极设置在感光层上。 透明顶部电极位于感光层上方。

公开(公告)号：US20130068954A1

公开(公告)日：2013-03-21

申请号：US13327739

申请日：2011-12-15

Applicant: Isaac Wing-Tak CHAN

Inventor： Isaac Wing-Tak CHAN

IPC: G01T1/24 ,  H01L31/0224 ,  H01L31/0352

CPC classification number: H01L27/14676 ,  G01T1/241

Abstract: Disclosed is a non-planar energy transducer, including a substrate and a switching device disposed thereon. An elastomer having a periodic structure is disposed on the switching device. A bottom electrode is conformally disposed on the elastomer to electrically connect to the switching device. An energy conversion layer is conformally disposed on the bottom electrode, and a top electrode is conformally disposed on the energy conversion layer, wherein the top electrode connects to a positive voltage or a negative voltage.

Abstract translation: 公开了一种非平面能量换能器，包括基板和设置在其上的开关装置。 具有周期性结构的弹性体设置在开关装置上。 底部电极保形地设置在弹性体上以电连接到开关装置。 能量转换层保形地设置在底部电极上，并且顶部电极保形地设置在能量转换层上，其中顶部电极连接到正电压或负电压。

公开(公告)号：US20120153392A1

公开(公告)日：2012-06-21

申请号：US13053691

申请日：2011-03-22

Applicant: Chih-Hung CHENG ,  Isaac Wing-Tak Chan

Inventor： Chih-Hung CHENG ,  Isaac Wing-Tak Chan

IPC: H01L29/786 ,  H01L21/336 ,  H01L21/20

CPC classification number: H01L27/1288 ,  H01L27/1251 ,  H01L27/14658 ,  H01L27/3244

Abstract: A manufacturing method for a semiconductor structure, and a pixel structure and a manufacturing method for the same are provided. The manufacturing method for the semiconductor structure includes following steps. A substrate is provided. A first conductive layer is formed and patterned by using a first mask patterned. A first material film, including a first semiconductor layer, is formed and patterned by using a second mask. A second conductive layer is formed and patterned by using a third mask. A second material film, including a first dielectric layer, a second semiconductor layer and a second dielectric layer, is formed and patterned with using a fourth mask. The second dielectric layer is pattern by using a fifth mask. A third material film, including a third conductive layer, is formed and patterned by using a sixth mask.

Abstract translation: 提供了半导体结构的制造方法以及像素结构及其制造方法。 半导体结构的制造方法包括以下步骤。 提供基板。 通过使用图案化的第一掩模来形成和图案化第一导电层。 通过使用第二掩模形成包括第一半导体层的第一材料膜并构图。 通过使用第三掩模形成并图案化第二导电层。 使用第四掩模形成并图案化包括第一介电层，第二半导体层和第二介电层的第二材料膜。 第二介电层通过使用第五掩模进行图案化。 通过使用第六掩模，形成并图案化包括第三导电层的第三材料膜。

公开(公告)号：US09257590B2

公开(公告)日：2016-02-09

申请号：US12972548

申请日：2010-12-20

Applicant: Isaac Wing-Tak Chan

Inventor： Isaac Wing-Tak Chan

IPC: G06F3/042 ,  H01L31/20 ,  H01L31/12 ,  H01L27/12

CPC classification number: H01L27/1214 ,  H01L31/12

Abstract: A photoelectric element including a transparent bottom electrode, a photosensitive layer, a first electrode, a second electrode and a transparent top electrode is provided. The photosensitive layer is located above the transparent bottom electrode. The first electrode and the second electrode are disposed on the photosensitive layer. The transparent top electrode is located above the photosensitive layer.

Abstract translation: 提供了包括透明底部电极，感光层，第一电极，第二电极和透明顶部电极的光电元件。 感光层位于透明底部电极的上方。 第一电极和第二电极设置在感光层上。 透明顶部电极位于感光层上方。

公开(公告)号：US07629633B2

公开(公告)日：2009-12-08

申请号：US11332483

申请日：2006-01-17

Applicant: Isaac Wing Tak Chan ,  Arokia Nathan

Inventor： Isaac Wing Tak Chan ,  Arokia Nathan

IPC: H01L31/112

CPC classification number: H01L29/78642 ,  H01L29/66787 ,  H01L29/78696

Abstract: A vertical thin film transistor (TFT) structure allows for a channel length to be scaled down, below that allowed by lateral TFT structures, to nanoscale (i.e., below 100 nm). However, while reducing the channel length, short-channel effects have been found in previous VTFT structures. Aspects of the new vertical TFT structure allow for the suppression of some of the short-channel effects. Advantageously, the capability of defining nanoscale channel length with short-channel effect suppression allows for p-channel vertical TFTs, where previously these were impractical. Furthermore, in aspects of the vertical TFT structure, the gate electrode is entirely vertical and by eliminating the horizontal overlap of the gate electrode over the drain electrode that present in earlier vertical TFT structures, parasitic gate-to-drain capacitance is eliminated. The vertical TFT structure provides size advantages over lateral TFTs and, furthermore, allows a TFT to be built at the intersection of electrode lines in an active-matrix configuration.

Abstract translation: 垂直薄膜晶体管（TFT）结构允许将沟道长度按比例缩小到低于横向TFT结构允许的长度，达到纳米尺度（即，低于100nm）。 然而，在减少通道长度的同时，在以前的VTFT结构中也发现了短通道效应。 新的垂直TFT结构的方面允许抑制一些短信道效应。 有利地，通过短沟道效应抑制来限定纳米尺度通道长度的能力允许p沟道垂直TFT，其中先前是不切实际的。 此外，在垂直TFT结构的方面，栅极完全是垂直的，并且通过消除在较早的垂直TFT结构中存在的漏极上的栅电极的水平重叠，消除了寄生栅 - 漏电容。 垂直TFT结构提供了超过横向TFT的尺寸优点，此外，允许在有源矩阵配置的电极线的交叉处构建TFT。