公开(公告)号：US20080237469A1

公开(公告)日：2008-10-02

申请号：US12056631

申请日：2008-03-27

申请人： Naoki Oda ,  Susumu Komiyama ,  Iwao Hosako

发明人： Naoki Oda ,  Susumu Komiyama ,  Iwao Hosako

IPC分类号： G01J5/02

CPC分类号： G01J5/02 ,  G01J5/0215 ,  G01J5/0235 ,  G01J5/024 ,  G01J5/046 ,  G01J5/08 ,  G01J5/0809 ,  G01J5/0815 ,  G01J5/0837 ,  G01J5/20

摘要： In a bolometer-type THz-wave detector in a micro-bridge structure in which a temperature detecting portion (diaphragm) including a bolometer thin film is supported by a supporting portion in a state suspended from a circuit substrate, a member (dielectric cover) made of a dielectric material for efficiently collecting a THz wave is added to an upper part of the temperature detecting portion, and when a refractive index of the dielectric cover is n, thickness is t, and a wavelength of the THz wave is λ, a setting is made so as to have nt>λ, and a gap between the dielectric cover and the temperature detecting portion is set at integral multiples of λ/2. By this arrangement, an absorption of the THz wave can be improved using a structure and manufacturing method of a bolometer-type infrared detector, and a high-performance bolometer-type THz-wave detector can be manufactured with a high yield.

摘要翻译： 在微型桥结构中的热辐射计式太赫兹波检测器中，其中包括测辐射热计薄膜的温度检测部分（隔膜）以悬挂于电路基板的状态由支撑部分支撑，构件（电介质盖） 由用于有效地收集太赫兹波的电介质材料添加到温度检测部分的上部，并且当电介质盖的折射率为n时，厚度为t，并且THz波的波长为λ，a 使nt>λ设定，电介质盖和温度检测部之间的间隔设为λ/ 2的整数倍。 通过这种布置，可以使用测辐射热计型红外线检测器的结构和制造方法来改善太赫兹波的吸收，并且可以以高产率制造高性能测辐射热计型THz波检测器。

公开(公告)号：US07557349B2

公开(公告)日：2009-07-07

申请号：US12056631

申请日：2008-03-27

申请人： Naoki Oda ,  Susumu Komiyama ,  Iwao Hosako

发明人： Naoki Oda ,  Susumu Komiyama ,  Iwao Hosako

IPC分类号： G01J5/02

CPC分类号： G01J5/02 ,  G01J5/0215 ,  G01J5/0235 ,  G01J5/024 ,  G01J5/046 ,  G01J5/08 ,  G01J5/0809 ,  G01J5/0815 ,  G01J5/0837 ,  G01J5/20

摘要： In a bolometer-type THz-wave detector 1 in a micro-bridge structure in which a temperature detecting portion 14 (diaphragm) including a bolometer thin film 7 is supported by a supporting portion 13 in a state suspended from a circuit substrate, a member (dielectric cover 11) made of a dielectric material for efficiently collecting a THz wave is added to an upper part of the temperature detecting portion 14, and when a refractive index of the dielectric cover 11 is n, thickness is t, and a wavelength of the THz wave is λ, a setting is made so as to have at >λ, and a gap between the dielectric cover 11 and the temperature detecting portion 14 is set at integral multiples of λ/2. By this arrangement, an absorptance of the THz wave can be improved using a structure and manufacturing method of a bolometer-type infrared detector, and a high-performance bolometer-type THz-wave detector can be manufactured with a high yield.

摘要翻译： 在微电桥结构中的热辐射计式太赫兹波检测器1中，其中包括测辐射热计薄膜7的温度检测部分14（隔膜）以悬挂于电路基板的状态由支撑部分13支撑， 由电介质材料构成的用于高效收集太赫兹波的电介质盖11被添加到温度检测部分14的上部，并且当电介质盖11的折射率为n时，厚度为t，波长为 太赫兹波是λ，设定为>λ，电介质盖11和温度检测部分14之间的间隙被设定为λ/ 2的整数倍。 通过这种布置，可以使用测辐射热计型红外检测器的结构和制造方法来提高太赫兹波的吸收率，并且可以以高产率制造高性能测辐射热计型THz波检测器。

公开(公告)号：US20080237467A1

公开(公告)日：2008-10-02

申请号：US12056569

申请日：2008-03-27

申请人： Naoki Oda ,  Susumu Komiyama ,  Iwao Hosako

发明人： Naoki Oda ,  Susumu Komiyama ,  Iwao Hosako

IPC分类号： G01J5/00

CPC分类号： G01J5/02 ,  G01J5/0215 ,  G01J5/0235 ,  G01J5/024 ,  G01J5/046 ,  G01J5/08 ,  G01J5/0809 ,  G01J5/0815 ,  G01J5/0837 ,  G01J5/20

摘要： In a micro-bridge structure in which a temperature detecting portion (diaphragm) including a bolometer thin film is supported by a supporting portion in a state floated from a circuit substrate, a reflective film reflecting a THz wave is formed on the circuit substrate, an absorbing film absorbing the THz wave is formed on the temperature detecting portion, and an optical resonance structure is formed by the reflective film and temperature detecting portion. A gap between the reflective film and temperature detecting portion measures approximately ¼ infrared wavelength (e.g., 1.5 to 2.5 μm). Sheet resistance of the temperature detecting portion is set in a range in which an absorptance of the THz wave becomes a predetermined value or above on the basis of the THz wave (approximately 10-100 Ω/sq.). The absorptance of the THz wave is drastically improved while using the structure and manufacturing technique of a bolometer-type infrared detector.

摘要翻译： 在从电路基板浮起的状态下，由支撑部支承包含测辐射热计薄膜的温度检测部（隔膜）的微桥结构中，在电路基板上形成反射太赫兹波的反射膜， 在温度检测部分上形成吸收太赫兹波的吸收膜，并且通过反射膜和温度检测部分形成光学共振结构。 反射膜和温度检测部之间的间隙测量近似1/4红外波长（例如，1.5至2.5μm）。 温度检测部的薄片电阻设定在基于太赫兹波（约10-100Ω/ sq。）的太赫兹波的吸收率成为规定值以上的范围内。 使用测辐射热计型红外探测器的结构和制造技术，太赫兹波的吸收率大大提高。

公开(公告)号：US20060215718A1

公开(公告)日：2006-09-28

申请号：US11204971

申请日：2005-08-17

申请人： Hiroaki Yasuda ,  Iwao Hosako

发明人： Hiroaki Yasuda ,  Iwao Hosako

IPC分类号： H01S5/00

CPC分类号： H01S5/3402 ,  B82Y20/00 ,  H01S1/02 ,  H01S5/34306 ,  H01S2302/02

摘要： A quantum cascade laser is provided that is constituted as a superlattice device configured by repeatedly overlaying AlSb or GaAlSb layers and GaSb layers and forming electrode layers at the opposite ends thereof, wherein the thickness of the GaSb layers constituting quantum wells for performing stimulated emission of light is defined so that the energy difference formed between the ground state and the first excited state in the GaSb layers becomes the LO phonon energy of GaSb. The quantum cascade laser lases at lower frequency than conventionally and has a structure that is easy to fabricate.

摘要翻译： 提供了一种量子级联激光器，其构成为通过重复地覆盖AlSb或GaAlSb层和GaSb层并在其相对端形成电极层而构成的超晶格器件，其中构成量子阱的GaSb层的厚度用于执行受激发光 被定义为使得GaSb层中的基态和第一激发态之间形成的能量差成为GaSb的LO声子能。 量子级联激光器比传统的频率低，具有易于制造的结构。

公开(公告)号：US20120050743A1

公开(公告)日：2012-03-01

申请号：US13199502

申请日：2011-08-31

申请人： Kenichi Yanai ,  Iwao Hosako ,  Junichi Hamazaki

发明人： Kenichi Yanai ,  Iwao Hosako ,  Junichi Hamazaki

IPC分类号： G01N21/49

CPC分类号： G01N21/3581 ,  G01N21/3504

摘要： An absorption spectroscopy apparatus provides an apparatus for analyzing gaseous sample. A measuring section irradiates the gaseous sample with terahertz radiation. An analysis section calculates a concentration of a specific constituent based on a level of absorbance by the gaseous sample. Terahertz radiation at least contains frequency components where the specific constituent shows an absorbance larger than an absorbance by a background constituent. Terahertz radiation at least contains frequency components where a spectrum of absorbance by the background constituent shows relatively flat profile.

摘要翻译： 吸收光谱装置提供用于分析气态样品的装置。 测量部分用太赫兹辐射照射气态样品。 分析部基于气态样品的吸光度的水平计算特定成分的浓度。 太赫兹辐射至少包含频率分量，其中特定成分显示比背景成分的吸光度大的吸光度。 太赫兹辐射至少包含频率分量，其中背景成分的吸收光谱显示相对平坦的轮廓。

公开(公告)号：US20130076912A1

公开(公告)日：2013-03-28

申请号：US13701701

申请日：2011-05-20

申请人： Naoki Oda ,  Yuichi Ogawa ,  Iwao Hosako ,  Norihiko Sekine

发明人： Naoki Oda ,  Yuichi Ogawa ,  Iwao Hosako ,  Norihiko Sekine

IPC分类号： H04N5/33

CPC分类号： H04N5/33 ,  G01N21/3581

摘要： In order to generate a two-dimensional image of a sample in a short time using THz waves, provided is a reflective imaging device including a sample holder, a THz wave light source, a THz wave camera, a rotation mechanism for rotating the holder and the camera, and a processing unit. A sample unit includes an incidence member, a sample, and a reflection member. The sample includes a first region of only a membrane and a second region including a biopolymer. The camera detects, with regard to respective incident angles, a THz wave in which interference occurs between a component reflected at an interface between the incidence member and the sample and a component reflected at an interface between the sample and the reflection member, of each portion of the sample unit, and outputs a signal. The processing unit specifies an incident angle at which a signal of a first THz wave that interferes in the first region is relatively small and a signal of a second THz that interferes in the second region is relatively large, and generates a two-dimensional image of the sample based on the signal from the camera with regard to the specified incident angle.

摘要翻译： 为了使用太赫兹波在短时间内产生样本的二维图像，提供了一种反射成像装置，其包括样本保持器，太赫兹波光源，太赫兹波相机，用于旋转支架的旋转机构和 相机和处理单元。 样品单元包括入射构件，样品和反射构件。 样品包括只有膜的第一区域和包括生物聚合物的第二区域。 摄像机检测相对于入射角度的THz波，其中在入射构件和样品之间的界面处反射的分量与在样品与反射构件之间的界面处反射的分量之间发生干涉， 并输出信号。 处理单元指定在第一区域中干扰的第一THz波的信号相对较小并且在第二区域中干扰的第二THz的信号相对较大的入射角，并且生成二维图像 该样本基于来自摄像机的信号对于指定的入射角度。

公开(公告)号：US09071776B2

公开(公告)日：2015-06-30

申请号：US13701701

申请日：2011-05-20

申请人： Naoki Oda ,  Yuichi Ogawa ,  Iwao Hosako ,  Norihiko Sekine

发明人： Naoki Oda ,  Yuichi Ogawa ,  Iwao Hosako ,  Norihiko Sekine

IPC分类号： H04N5/33 ,  G01N21/3581

CPC分类号： H04N5/33 ,  G01N21/3581

摘要： In order to generate a two-dimensional image of a sample in a short time using THz waves, provided is a reflective imaging device including a sample holder, a THz wave light source, a THz wave camera, a rotation mechanism for rotating the holder and the camera, and a processing unit. A sample unit includes an incidence member, a sample, and a reflection member. The sample includes a first region of only a membrane and a second region including a biopolymer. The camera detects, with regard to respective incident angles, a THz wave in which interference occurs between a component reflected at an interface between the incidence member and the sample and a component reflected at an interface between the sample and the reflection member, of each portion of the sample unit, and outputs a signal. The processing unit specifies an incident angle at which a signal of a first THz wave that interferes in the first region is relatively small and a signal of a second THz that interferes in the second region is relatively large, and generates a two-dimensional image of the sample based on the signal from the camera with regard to the specified incident angle.

摘要翻译： 为了使用太赫兹波在短时间内产生样本的二维图像，提供了一种反射成像装置，其包括样本保持器，太赫兹波光源，太赫兹波相机，用于旋转支架的旋转机构和 相机和处理单元。 样品单元包括入射构件，样品和反射构件。 样品包括只有膜的第一区域和包括生物聚合物的第二区域。 摄像机检测相对于入射角度的THz波，其中在入射构件和样品之间的界面处反射的分量与在样品与反射构件之间的界面处反射的分量之间发生干涉， 并输出信号。 处理单元指定在第一区域中干扰的第一THz波的信号相对较小并且在第二区域中干扰的第二THz的信号相对较大的入射角，并且生成二维图像 该样本基于来自摄像机的信号对于指定的入射角度。

公开(公告)号：US07741604B2

公开(公告)日：2010-06-22

申请号：US12056569

申请日：2008-03-27

申请人： Naoki Oda ,  Susumu Komiyama ,  Iwao Hosako

发明人： Naoki Oda ,  Susumu Komiyama ,  Iwao Hosako

IPC分类号： G01J5/00

CPC分类号： G01J5/02 ,  G01J5/0215 ,  G01J5/0235 ,  G01J5/024 ,  G01J5/046 ,  G01J5/08 ,  G01J5/0809 ,  G01J5/0815 ,  G01J5/0837 ,  G01J5/20

摘要： In a micro-bridge structure in which a temperature detecting portion 14 (diaphragm) including a bolometer thin film 7 is supported by a supporting portion 13 in a state floated from a circuit substrate 2, a reflective film 3 reflecting a THz wave is formed on the circuit substrate 2, an absorbing film 11 absorbing the THz wave is formed on the temperature detecting portion 14, and an optical resonance structure is formed by the reflective film 3 and the temperature detecting portion 14. And a gap between the reflective film 3 and the temperature detecting portion 14 is set approximately ¼ of a wavelength of an infrared ray on the basis of the wavelength of the infrared ray (in a range of approximately 1.5 to 2.5 μm, for example), and a sheet resistance of the temperature detecting portion 14 is set in a range in which an absorptance of the THz wave becomes a predetermined value or above on the basis of the THz wave (in a range of approximately 10 to 100 Ω/sq.). By this arrangement, the absorptance of the THz wave is drastically improved while using the structure and manufacturing technique of a bolometer-type infrared detector.

摘要翻译： 在从电路基板2浮起的状态下，由支撑部13支撑包括测辐射热计薄膜7的温度检测部14（隔膜）的微桥结构中，形成反射太赫兹波的反射膜3， 电路基板2，吸收THz波的吸收膜11形成在温度检测部分14上，并且由反射膜3和温度检测部分14形成光学共振结构。反射膜3和 基于红外线的波长（例如约1.5〜2.5μm的范围），将温度检测部14设定为红外线的波长的近似1/4，并且温度检测部14的薄层电阻 14设定在THz波的吸收率基于THz波（约10〜100Ω·平方）的范围内成为规定值以上的范围。 通过这种布置，在使用测辐射热计型红外探测器的结构和制造技术的同时，太赫兹波的吸收率得到显着提高。