公开(公告)号：US6046659A

公开(公告)日：2000-04-04

申请号：US080326

申请日：1998-05-15

申请人： Robert Y. Loo ,  Adele Schmitz ,  Julia Brown ,  Jonathan Lynch ,  Debabani Choudhury ,  James Foschaar ,  Daniel J. Hyman ,  Brett Warneke ,  Juan Lam ,  Tsung-Yuan Hsu ,  Jae Lee ,  Mehran Mehregany

发明人： Robert Y. Loo ,  Adele Schmitz ,  Julia Brown ,  Jonathan Lynch ,  Debabani Choudhury ,  James Foschaar ,  Daniel J. Hyman ,  Brett Warneke ,  Juan Lam ,  Tsung-Yuan Hsu ,  Jae Lee ,  Mehran Mehregany

IPC分类号： H01H1/50 ,  H01H59/00 ,  H01P1/12 ,  H01P1/10 ,  H01H57/00

CPC分类号： B81B3/0072 ,  H01G5/18 ,  H01G5/38 ,  H01G5/40 ,  H01H59/0009 ,  H01P1/12 ,  B81B2201/014 ,  B81B2203/0118 ,  H01H1/50

摘要： Methods for the design and fabrication of micro-electro-mechanical switches are disclosed. Two different switch designs with three different switch fabrication techniques are presented for a total of six switch structures. Each switch has a multiple-layer armature with a suspended biasing electrode and a conducting transmission line affixed to the structural layer of the armature. A conducting dimple is connected to the conducting line to provide a reliable region of contact for the switch. The switch is fabricated using silicon nitride as the armature structural layer and silicon dioxide as the sacrificial layer supporting the armature during fabrication. Hydrofluoric acid is used to remove the silicon dioxide layer with post-processing in a critical point dryer to increase yield.

摘要翻译： 公开了微机电开关的设计和制造方法。 提出了三种不同的开关制造技术的两种不同的开关设计，共有六种开关结构。 每个开关具有多层电枢，其具有悬置的偏置电极和固定到电枢的结构层的导电传输线。 导电凹坑连接到导线，为开关提供可靠的接触区域。 该开关使用氮化硅作为电枢结构层和二氧化硅作为在制造期间支撑电枢的牺牲层制造。 氢氟酸用于在临界点干燥器中进行后处理以去除二氧化硅层以提高产率。

公开(公告)号：US20050082652A1

公开(公告)日：2005-04-21

申请号：US10716196

申请日：2003-11-17

申请人： Debabani Choudhury ,  Ross Bowen ,  James Foschaar

发明人： Debabani Choudhury ,  Ross Bowen ,  James Foschaar

IPC分类号： H01L23/04 ,  H01L23/10 ,  H01L23/552 ,  H01L23/66 ,  H01L23/02

CPC分类号： H01L23/66 ,  H01L23/04 ,  H01L23/10 ,  H01L23/552 ,  H01L2924/0002 ,  H01L2924/01079 ,  H01L2924/1423 ,  H01L2924/1616 ,  H01L2924/1617 ,  H01L2924/3011 ,  H01L2924/00

摘要： A housing for an integrated circuit, comprising a base for securing a substrate with an integrated circuit thereon, a top cover, and a body with a cavity for receiving the substrate and at least a portion of the top cover therein to form an enclosed housing therewith, the body including at least one connector extending from within the cavity to outside of the body and configured to contact the integrated circuit when the substrate is in the cavity.

摘要翻译： 一种用于集成电路的壳体，包括用于固定其上具有集成电路的基板的基座，顶盖和具有用于接收基板的空腔的主体以及其中的顶盖的至少一部分以与其形成封闭壳体 所述主体包括至少一个连接器，所述至少一个连接器从所述空腔内延伸到所述主体外部，并且被配置为当所述基板处于所述空腔中时与所述集成电路接触。

公开(公告)号：US07105924B2

公开(公告)日：2006-09-12

申请号：US10716196

申请日：2003-11-17

申请人： Debabani Choudhury ,  Ross Bowen ,  James Foschaar

发明人： Debabani Choudhury ,  Ross Bowen ,  James Foschaar

IPC分类号： H01L23/34

CPC分类号： H01L23/66 ,  H01L23/04 ,  H01L23/10 ,  H01L23/552 ,  H01L2924/0002 ,  H01L2924/01079 ,  H01L2924/1423 ,  H01L2924/1616 ,  H01L2924/1617 ,  H01L2924/3011 ,  H01L2924/00

摘要： A housing for an integrated circuit, comprising a base for securing a substrate with an integrated circuit thereon, a top cover, and a body with a cavity for receiving the substrate and at least a portion of the top cover therein to form an enclosed housing therewith, the body including at least one connector extending from within the cavity to outside of the body and configured to contact the integrated circuit when the substrate is in the cavity.

摘要翻译： 一种用于集成电路的壳体，包括用于固定其上具有集成电路的基板的基座，顶盖和具有用于接收基板的空腔的主体以及其中的顶盖的至少一部分以与其形成封闭壳体 所述主体包括至少一个连接器，所述至少一个连接器从所述空腔内延伸到所述主体外部，并且被配置为当所述基板处于所述空腔中时与所述集成电路接触。

公开(公告)号：US06331257B1

公开(公告)日：2001-12-18

申请号：US09452052

申请日：1999-11-30

申请人： Robert Y. Loo ,  Adele Schmitz ,  Julia Brown ,  James Foschaar ,  Daniel J. Hyman ,  Tsung-Yuan Hsu

发明人： Robert Y. Loo ,  Adele Schmitz ,  Julia Brown ,  James Foschaar ,  Daniel J. Hyman ,  Tsung-Yuan Hsu

IPC分类号： H01B1300

CPC分类号： B81B3/0072 ,  B81B2201/014 ,  B81B2203/0118 ,  H01G5/18 ,  H01G5/38 ,  H01G5/40 ,  H01H1/50 ,  H01H59/0009 ,  H01P1/12

摘要： Methods for the design and fabrication of micro-electro-mechanical switches are disclosed. Two different switch designs with three different switch fabrication techniques are presented for a total of six switch structures. Each switch has a multiple-layer armature with a suspended biasing electrode and a conducting transmission line affixed to the structural layer of the armature. A conducting dimple is connected to the conducting line to provide a reliable region of contact for the switch. The switch is fabricated using silicon nitride as the armature structural layer and silicon dioxide as the sacrificial layer supporting the armature during fabrication. Hydrofluoric acid is used to remove the silicon dioxide layer with post-processing in a critical point dryer to increase yield.

摘要翻译： 公开了微机电开关的设计和制造方法。 提出了三种不同的开关制造技术的两种不同的开关设计，共有六种开关结构。 每个开关具有多层电枢，其具有悬置的偏置电极和固定到电枢的结构层的导电传输线。 导电凹坑连接到导线，为开关提供可靠的接触区域。 该开关使用氮化硅作为电枢结构层和二氧化硅作为在制造期间支撑电枢的牺牲层制造。 氢氟酸用于在临界点干燥器中进行后处理以去除二氧化硅层以提高产率。