Microwave integrated circuit package and method for forming such package
    2.
    发明授权
    Microwave integrated circuit package and method for forming such package 有权
    微波集成电路封装及其形成方法

    公开(公告)号:US08153449B2

    公开(公告)日:2012-04-10

    申请号:US13113317

    申请日:2011-05-23

    Abstract: A method for packaging a semiconductor device. The method includes: providing a dielectric layer over the semiconductor device; determining patterns and placement of material on the dielectric layer to provide a predetermined magnetic or electric effect for the device, such effects being provided on the device from such patterned and placed material solely by electrical or magnetic waves coupled between such material and the device; and forming the material in the determined patterns and placement to provide the predetermined effects.

    Abstract translation: 一种用于封装半导体器件的方法。 该方法包括:在半导体器件上提供介电层; 确定材料在电介质层上的图案和放置以为器件提供预定的磁或电效应,这种效果仅通过耦合在这种材料和器件之间的电或磁波从这种图案化和放置的材料提供在器件上; 并以确定的图案和放置形成材料以提供预定的效果。

    Electronic component comprising a metallic case provided with a magnetic loss material
    10.
    发明授权
    Electronic component comprising a metallic case provided with a magnetic loss material 失效
    电子元件包括设置有磁损耗材料的金属外壳

    公开(公告)号:US06635819B2

    公开(公告)日:2003-10-21

    申请号:US09825949

    申请日:2001-04-04

    Abstract: In an electronic component (11) comprising an electronic circuit or a circuit element in a metallic case including a case (13) and a cover (39), a magnetic thin film (51) made of a magnetic loss material is provided on at least one part of an inner wall surface of the metallic case. In the magnetic loss material, its composition is represented by M-X—Y, wherein M denotes at least one of Fe, Co and Ni, X denotes at least one of elements other than M and Y, and Y denotes at least one of F, N and O. The maximum value &mgr;″max of an imaginary part &mgr;″, which is an imaginary number component of a complex permeability of the magnetic loss material, exists within a frequency range from 100 MHz to 10 GHz. A relative bandwidth bwr is not greater than 200% where the relative bandwidth bwr is obtained by extracting a frequency bandwidth between two frequencies at which the value of &mgr;″ is 50% of the maximum &mgr;″max and normalizing the frequency bandwidth at the center frequency thereof. It is possible to provide an electronic component including a metallic case, which contains a high-speed operation type of semiconductor device and/or an electronic circuit and in which undesired radiation is reduced.

    Abstract translation: 在包括壳体(13)和盖(39)的金属壳体中的电子电路或电路元件的电子部件(11)中,至少设置由磁损耗材料制成的磁性薄膜(51) 金属外壳的内壁表面的一部分。 在磁损耗材料中,其组成由MXY表示,其中M表示Fe,Co和Ni中的至少一种,X表示除M和Y以外的元素中的至少一种,Y表示F,N和 作为磁损耗材料的复磁导率的虚数分量的虚数μ“的最大值mu''max存在于从100MHz到10GHz的频率范围内。 相对带宽bwr不大于200%,其中通过提取两个频率之间的频率带宽获得相对带宽bwr,其中mu“的值是最大mu''max的50%,并且将频带宽度归一化 中心频率。 可以提供包括金属外壳的电子部件,其包含高速操作型半导体器件和/或电子电路,并且其中不期望的辐射被减少。

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