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公开(公告)号：US07620470B1
公开(公告)日：2009-11-17
申请号：US11241023
申请日：2005-09-30
IPC分类号： G06F19/00
CPC分类号： G05B19/41865 , G05B19/4184 , G05B2219/31455 , G05B2219/32243 , G05B2219/32297 , G05B2219/37224 , Y02P90/14 , Y02P90/20
摘要： A method, apparatus and a system, for provided for performing an automated process flow adjustment. A semiconductor wafer is processed based upon a routing plan and a predetermined schedule. A fault detection relating to the processing of the semiconductor wafer is performed. Dynamically modifying the predetermined routing plan or the predetermined schedule based upon the fault detection. A predetermined process material delivery plan is dynamically modified based upon the modifying of the routing plan or modifying of the predetermined schedule.
摘要翻译： 一种用于执行自动化处理流程调整的方法，装置和系统。 基于路由规划和预定时间表处理半导体晶片。 执行与半导体晶片的处理有关的故障检测。 基于故障检测动态地修改预定的路由计划或预定的时间表。 基于修改路由规划或修改预定时间表来动态地修改预定的处理材料传送计划。
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2.发明授权公开(公告)号：US06790680B1
公开(公告)日：2004-09-14
申请号：US10052055
申请日：2002-01-17
IPC分类号： H01L2100
CPC分类号： H01L21/67276
摘要： A method and apparatus for determining a possible cause of a fault in a semiconductor fabrication process. The method includes determining a first fault in a first processing tool executing under first operating conditions and determining a second fault in a second processing tool executing under second operating conditions. The method further includes identifying a possible source of the second fault based on at least the first operating conditions of the first processing tool.
摘要翻译： 一种用于确定半导体制造工艺中的故障的可能原因的方法和装置。 该方法包括确定在第一操作条件下执行的第一处理工具中的第一故障，并确定在第二操作条件下执行的第二处理工具中的第二故障。 该方法还包括基于至少第一处理工具的第一操作条件来识别第二故障的可能来源。
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3.发明授权公开(公告)号：US06763277B1
公开(公告)日：2004-07-13
申请号：US09906519
申请日：2001-07-16
IPC分类号： G06F1900
CPC分类号： G05B19/41865 , G05B2219/32301 , Y02P90/20 , Y02P90/26
摘要： A method, apparatus, and system is provided for a proactive dispatch system to improve line balancing. At least one request for processing a semiconductor wafer is received. A line-balancing analysis based upon the request is performed. At least one semiconductor wafer based upon the line-balancing analysis is processed.
摘要翻译： 提供了一种用于主动调度系统以改善线路平衡的方法，装置和系统。 接收至少一个处理半导体晶片的请求。 执行基于请求的线路平衡分析。 基于线平衡分析的至少一个半导体晶片被处理。
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公开(公告)号：US06787376B1
公开(公告)日：2004-09-07
申请号：US10154274
申请日：2002-05-22
申请人： Jason A. Grover , Mark K. Sze-To
发明人： Jason A. Grover , Mark K. Sze-To
IPC分类号： H01L2166
CPC分类号： H01L22/20
摘要： A method and apparatus is provided for creating a process recipe based on a desired result. The method comprises providing at least one workpiece to a processing tool for processing, providing the desired result for the workpiece to the processing tool, and generating a recipe for processing the workpiece based on the desired result.
摘要翻译： 提供了一种基于期望结果创建过程配方的方法和装置。 该方法包括向处理工具提供至少一个工件用于处理，为工件提供期望的结果给加工工具，以及根据期望的结果生成用于加工工件的配方。
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公开(公告)号：US06895295B1
公开(公告)日：2005-05-17
申请号：US10140468
申请日：2002-05-06
CPC分类号： G03F7/70525 , G03F7/70991
摘要： A method for controlling a processing tool having a plurality of chambers includes processing a wafer in a first chamber of the processing tool; measuring a characteristic of the wafer; and modifying an operating recipe of one of the plurality of chambers based on the measured characteristic. A system for processing semiconductor wafers includes a processing tool, a metrology tool, and a process controller. The processing tool includes a plurality of chambers. The metrology tool is adapted to measure a characteristic of a wafer processed in a first chamber of the processing tool. The process controller is adapted to modify an operating recipe of one of the plurality of chambers based on the measured characteristic.
摘要翻译： 一种用于控制具有多个室的处理工具的方法包括：处理工具的第一室中的晶片; 测量晶片的特性; 以及基于所测量的特性修改所述多个室中的一个室的操作配方。 一种用于处理半导体晶片的系统包括处理工具，计量工具和过程控制器。 处理工具包括多个室。 测量工具适于测量在处理工具的第一室中处理的晶片的特性。 过程控制器适于基于测量的特性来修改多个腔室中的一个腔室的操作配方。
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公开(公告)号：US06754593B1
公开(公告)日：2004-06-22
申请号：US10163566
申请日：2002-06-06
申请人： Edward C. Stewart , Jason A. Grover
发明人： Edward C. Stewart , Jason A. Grover
IPC分类号： G06K900
CPC分类号： H01L22/20 , G01N21/9501
摘要： A method for measuring defects includes receiving a defect characteristic measurement for each measurement site in a first subset of a plurality of measurement sites on a workpiece. A second subset of the plurality of measurement sites is defined. The size of the second subset is based on the defect characteristic measurements of the first subset of the plurality of measurement sites. A metrology tool is directed to measure the defect characteristic at each of the measurement site in the second subset responsive to the size of the second subset being greater than zero. A system includes a metrology tool and a controller. The metrology tool is configured to measure a defect characteristic at each of a first plurality of measurement sites on a workpiece. The controller is configured to compare the measured defect characteristics at the first plurality of measurement sites against a first predetermined threshold and direct the metrology tool to measure the defect characteristic at each of a second plurality of measurement sites on the workpiece responsive to the measured defect characteristics being greater than the first predetermined threshold.
摘要翻译： 用于测量缺陷的方法包括在工件上的多个测量点的第一子集中接收每个测量位置的缺陷特征测量。 定义多个测量点的第二子集。 第二子集的大小基于多个测量点的第一子集的缺陷特征测量。 计量工具用于测量第二子集中的每个测量部位的缺陷特征，响应于第二子集的大小大于零。 系统包括计量工具和控制器。 测量工具被配置为测量工件上的第一多个测量位置中的每一个处的缺陷特性。 控制器被配置为将第一多个测量点处的测量的缺陷特性与第一预定阈值进行比较，并且引导测量工具响应于测量的缺陷特性来测量工件上的第二多个测量位置的每一个处的缺陷特性 大于第一预定阈值。
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7.发明授权Method for determining, tracking and/or controlling processing based upon silicon characteristics 有权用于基于硅特性确定，跟踪和/或控制处理的方法公开(公告)号：US06638778B1
公开(公告)日：2003-10-28
申请号：US10082809
申请日：2002-02-25
IPC分类号： H01L2166
CPC分类号： H01L22/20 , H01L2924/0002 , H01L2924/00
摘要： The present invention is generally directed to various methods for determining, tracking and/or controlling processing based upon wafer characteristics. In one embodiment, the method is directed to selecting a plurality of wafers from the group of wafers based upon the semiconductor device to be manufactured on the wafer and at least one characteristic of the wafers. In another embodiment, the method comprises identifying a source of wafers wherein the device metrology data lies outside of the preselected range based upon the wafer identification mark and the device metrology data. As yet another example, the method comprises determining at least one parameter of a process operation to be performed on a wafer in a processing tool based upon the determined wafer characteristics.
摘要翻译： 本发明一般涉及用于基于晶片特性来确定，跟踪和/或控制处理的各种方法。 在一个实施例中，该方法旨在基于要在晶片上制造的半导体器件和晶片的至少一个特性从晶片组中选择多个晶片。 在另一个实施例中，该方法包括识别晶片源，其中基于晶片识别标记和器件测量数据，器件测量数据位于预选范围之外。 作为另一示例，该方法包括基于所确定的晶片特性来确定在处理工具中在晶片上执行的处理操作的至少一个参数。
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