公开(公告)号：US06593655B1

公开(公告)日：2003-07-15

申请号：US09639410

申请日：2000-08-14

申请人： Mark Jon Loboda ,  Jeffrey Alan Seifferly

发明人： Mark Jon Loboda ,  Jeffrey Alan Seifferly

IPC分类号： H01L2348

CPC分类号： H01L21/02126 ,  C23C16/30 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/31633

摘要： This invention pertains to a method for producing hydrogenated silicon oxycarbide (H:SiOC) films having low dielectric constant. The method comprises reacting an methyl-containing silane in a controlled oxygen environment using plasma enhanced or ozone assisted chemical vapor deposition to produce the films. The resulting films are useful in the formation of semiconductor devices and have a dielectric constant of 3.6 or less.

摘要翻译： 本发明涉及具有低介电常数的氢化硅氧化碳（H：SiOC）薄膜的制造方法。 该方法包括使用等离子体增强或臭氧辅助化学气相沉积在受控的氧环境中使含甲基的硅烷反应以产生膜。 所得膜可用于半导体器件的形成并具有3.6或更小的介电常数。

公开(公告)号：US6159871A

公开(公告)日：2000-12-12

申请号：US86811

申请日：1998-05-29

申请人： Mark Jon Loboda ,  Jeffrey Alan Seifferly

发明人： Mark Jon Loboda ,  Jeffrey Alan Seifferly

IPC分类号： C01B31/36 ,  C23C16/30 ,  C23C16/42 ,  H01B3/02 ,  H01L21/285 ,  H01L21/316 ,  H01L21/31 ,  H01L21/469

CPC分类号： H01L21/02126 ,  C23C16/30 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/31633

摘要： This invention pertains to a method for producing hydrogenated silicon oxycarbide (H:SiOC) films having low dielectric constant. The method comprises reacting an methyl-containing silane in a controlled oxygen environment using plasma enhanced or ozone assisted chemical vapor deposition to produce the films. The resulting films are useful in the formation of semiconductor devices and have a dielectric constant of 3.6 or less.