公开(公告)号：US08786276B2

公开(公告)日：2014-07-22

申请号：US12995618

申请日：2009-06-02

申请人： Sebastian Faehler ,  Michael Thomas ,  Oleg Heczko ,  Joerg Buschbeck ,  Jeffrey McCord

发明人： Sebastian Faehler ,  Michael Thomas ,  Oleg Heczko ,  Joerg Buschbeck ,  Jeffrey McCord

IPC分类号： G01R33/02

CPC分类号： H01L41/12 ,  F03G7/065 ,  H01L41/125 ,  H01L41/20 ,  H01L41/47

摘要： The invention relates to the field of materials science and relates to a component, which can be used, for example, for microcomponents, microsensors and microactuators. The object of the present invention is to disclose a component in which a clearly greater relative length change occurs. The object is attained through a component of a ferromagnetic shape memory material, produced by a method in which at least one sacrificial layer is applied onto a single-crystalline or biaxially textured substrate, onto which sacrificial layer an epitaxial or textured layer of a ferromagnetic shape memory material with a layer thickness of ≦50 μm is applied, subsequently the sacrificial layer is removed at least partially, and during or after the layer application a structuring at least of the ferromagnetic shape memory material is realized such that an aspect ratio is achieved in which at least one length is greater by at least a factor of 3 than the thickness of the layer or the shortest dimension of the component.

摘要翻译： 本发明涉及材料科学领域，涉及可用于例如微型部件，微型传感器和微型致动器的部件。 本发明的目的是公开其中发生明显更大的相对长度变化的部件。 该目的是通过铁磁形状记忆材料的一个部件来实现的，该方法是通过一种方法产生的，其中至少一个牺牲层被施加到单晶或双轴织构的衬底上，牺牲层上形成铁磁形状的外延或纹理化层 施加层厚度为＆lt; nlE;50μm的记忆材料，随后至少部分去除牺牲层，并且在层施加之间或之后，实现至少铁磁形状记忆材料的结构，使得实现纵横比 其中至少一个长度比层的厚度或部件的最短尺寸大至少3倍。

公开(公告)号：US20050052791A1

公开(公告)日：2005-03-10

申请号：US10934713

申请日：2004-09-03

申请人： Jeffrey McCord

发明人： Jeffrey McCord

IPC分类号： G01R33/09 ,  G11B5/012 ,  G11B5/31 ,  G11B5/39 ,  G11B5/33 ,  G11B5/127

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G11B5/012 ,  G11B5/313 ,  G11B5/3163 ,  G11B5/3903 ,  G11B2005/3996 ,  Y10T29/49032 ,  Y10T29/49039 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T29/49052 ,  Y10T428/32

摘要： A magneto-resistive (MR) sensor is provided including a pinned layer, and a free layer disposed above the pinned layer. Also included is a pair of leads disposed over portions of the free layer. Further, a pinning layer is disposed below the pinned layer. Disposed below the pinning layer is an underlayer. For enhanced operation, first portions of the pinned layer disposed below the leads have a first pinned layer magnetization parallel with a free layer magnetization associated with the free layer in the absence of an external field. Further, a second portion of the pinned layer has a second pinned layer magnetization perpendicular with the free layer magnetization in the absence of the external field.

摘要翻译： 提供了一种磁阻（MR）传感器，其包括被钉扎层和设置在钉扎层上方的自由层。 还包括设置在自由层的部分上的一对引线。 此外，钉扎层设置在被钉扎层的下方。 在钉扎层下方设置底层。 为了增强操作，布置在引线下方的被钉扎层的第一部分在没有外部场的情况下具有与自由层相关联的自由层磁化平行的第一固定层磁化。 此外，钉扎层的第二部分具有在不存在外部场的情况下与自由层磁化垂直的第二钉扎层的磁化。