SRAM layout for relaxing mechanical stress in shallow trench isolation technology
    1.
    发明授权
    SRAM layout for relaxing mechanical stress in shallow trench isolation technology 有权
    在浅沟槽隔离技术中放松机械应力的SRAM布局

    公开(公告)号:US06635936B1

    公开(公告)日:2003-10-21

    申请号:US09616975

    申请日:2000-07-14

    IPC分类号: H01L2976

    CPC分类号: H01L27/1112 Y10S257/903

    摘要: An SRAM device has STI regions separated by mesas and doped regions including source/drain regions, active areas, wordline conductors and contacts in a semiconductor substrate is made with a source region has 90° transitions in critical locations. Form a dielectric layer above the active areas. Form the wordline conductors above the active areas transverse to the active areas. The source and drain regions of a pass gate transistor are on the opposite sides of a wordline conductor. Form the sidewalls along the crystal plane. Form the contacts extending down through to the dielectric layer to the mesas. Substrate stress is reduced because the large active area region formed in the substrate assures that the contacts are formed on the surfaces of the mesas are in contact with the mesas formed on the substrate and that the surfaces of the silicon of the mesas are shielded from the contacts.

    摘要翻译: SRAM器件具有通过台面分隔的STI区域,并且包括源极/漏极区域,有源区域,字线导体和半导体衬底中的触点的掺杂区域由源区域在关键位置具有90°转变而制成。 在有效区域之上形成介电层。 在横向于有效区域的有效区域之上形成字线导体。 栅极晶体管的源极和漏极区域位于字线导体的相对侧。 沿着<100>晶面形成侧壁。 形成触点向下延伸到电介质层到台面。 衬底应力减小,因为形成在衬底中的大的有源区域区域确保在台面的<100>表面上形成的触点与形成在衬底上的台面接触,并且硅的<110>表面 台面与触点屏蔽。

    Micro probing tip made by micro machine method
    2.
    发明授权
    Micro probing tip made by micro machine method 失效
    微型探针微探针法制成

    公开(公告)号:US06797528B2

    公开(公告)日:2004-09-28

    申请号:US10053224

    申请日:2002-01-17

    IPC分类号: G01R3126

    CPC分类号: G01R3/00

    摘要: A method and apparatus for forming a micro tip for a micro probe utilized in testing semiconductor integrated circuit devices. A thick oxide layer is deposited upon a substrate initially to form the micro tip. The micro tip for the micro probe can be defined from the thick oxide layer upon the substrate through a plurality of subsequent semiconductor manufacturing operations performed upon the substrate and layers thereof. A plurality of micro tips can be mass produced and efficiently utilized in association with increasingly smaller sizes of semiconductor integrated circuit devices.

    摘要翻译: 一种用于形成用于测试半导体集成电路器件的微探头微尖的方法和装置。 最初将厚氧化层沉积在基底上以形成微尖端。 用于微探针的微尖端可以通过在衬底及其层上执行的多个随后的半导体制造操作从衬底上的厚氧化物层定义。 可以与越来越小尺寸的半导体集成电路器件相关联地大量生产和有效地利用多个微尖端。

    Primary ion or electron current adjustment to enhance voltage contrast effect
    3.
    发明授权
    Primary ion or electron current adjustment to enhance voltage contrast effect 有权
    初级离子或电子电流调节以增强电压对比效果

    公开(公告)号:US06573736B1

    公开(公告)日:2003-06-03

    申请号:US10042571

    申请日:2002-01-09

    IPC分类号: G01R31305

    摘要: A new method is provided for identifying Voltage Contrast that is applied for the evaluation of characteristics of deposition of thin layers of semiconductor material. The voltage contrast is enhanced by applying increased electron beam current, provided by either E-beam or ion-beam current, to the point under investigation.

    摘要翻译: 提供了一种用于识别用于评估半导体材料薄层沉积特性的电压对比度的新方法。 通过将电子束或离子束电流提供的电子束电流增加到被调查点来增强电压对比度。

    Inkjet apparatus and calibration methods thereof
    4.
    发明授权
    Inkjet apparatus and calibration methods thereof 有权
    喷墨装置及其校准方法

    公开(公告)号:US07891752B2

    公开(公告)日:2011-02-22

    申请号:US12056234

    申请日:2008-03-26

    IPC分类号: B41J29/393

    摘要: An Inkjet apparatus is provided. An Inkjet apparatus includes a piezoelectric inkjet print head, a plurality of driving unit, a detection unit and a control unit. The piezoelectric inkjet print head comprises a plurality of nozzles, wherein each the nozzle outputs an ink drop according to a driving voltage. The driving unit generates the driving voltage according to a control signal. The detection unit detects a state of the ink drop corresponding to the nozzle to generate a detection signal. The control unit generates the control signal to control the driving voltage according to the detection signal.

    摘要翻译: 提供喷墨装置。 喷墨装置包括压电喷墨打印头,多个驱动单元,检测单元和控制单元。 压电喷墨打印头包括多个喷嘴,其中每个喷嘴根据驱动电压输出墨滴。 驱动单元根据控制信号产生驱动电压。 检测单元检测与喷嘴相对应的墨滴的状态以产生检测信号。 控制单元根据检测信号产生控制信号以控制驱动电压。

    INKJET APPARATUS AND CALIBRATION METHODS THEREOF
    5.
    发明申请
    INKJET APPARATUS AND CALIBRATION METHODS THEREOF 有权
    喷墨设备及其校准方法

    公开(公告)号:US20090073205A1

    公开(公告)日:2009-03-19

    申请号:US12056234

    申请日:2008-03-26

    IPC分类号: B41J29/38 B41J2/045

    摘要: An Inkjet apparatus is provided. An Inkjet apparatus includes a piezoelectric inkjet print head, a plurality of driving unit, a detection unit and a control unit. The piezoelectric inkjet print head comprises a plurality of nozzles, wherein each the nozzle outputs an ink drop according to a driving voltage. The driving unit generates the driving voltage according to a control signal. The detection unit detects a state of the ink drop corresponding to the nozzle to generate a detection signal. The control unit generates the control signal to control the driving voltage according to the detection signal.

    摘要翻译: 提供喷墨装置。 喷墨装置包括压电喷墨打印头,多个驱动单元,检测单元和控制单元。 压电喷墨打印头包括多个喷嘴,其中每个喷嘴根据驱动电压输出墨滴。 驱动单元根据控制信号产生驱动电压。 检测单元检测与喷嘴相对应的墨滴的状态以产生检测信号。 控制单元根据检测信号产生控制信号以控制驱动电压。

    SRAM layout for relaxing mechanical stress in shallow trench isolation
technology and method of manufacture thereof
    6.
    发明授权
    SRAM layout for relaxing mechanical stress in shallow trench isolation technology and method of manufacture thereof 有权
    用于在浅沟槽隔离技术中放松机械应力的SRAM布局及其制造方法

    公开(公告)号:US6117722A

    公开(公告)日:2000-09-12

    申请号:US252464

    申请日:1999-02-18

    IPC分类号: H01L27/11 H01L21/8234

    CPC分类号: H01L27/1112 Y10S257/903

    摘要: An SRAM device has STI regions separated by mesas and doped regions including source/drain regions, active areas, wordline conductors and contacts in a semiconductor substrate is made with a source region has 90.degree. transitions in critical locations. Form a dielectric layer above the active areas. Form the wordline conductors above the active areas transverse to the active areas. The source and drain regions of a pass gate transistor are on the opposite sides of a wordline conductor. Form the sidewalls along the crystal plane. Form the contacts extending down through to the dielectric layer to the mesas. Substrate stress is reduced because the large active area region formed in the substrate assures that the contacts are formed on the surfaces of the mesas are in contact with the mesas formed on the substrate and that the surfaces of the silicon of the mesas are shielded from the contacts.

    摘要翻译: SRAM器件具有通过台面分隔的STI区域,并且包括源极/漏极区域,有源区域,字线导体和半导体衬底中的触点的掺杂区域由源区域在关键位置具有90°转变而制成。 在有效区域之上形成介电层。 在横向于有效区域的有效区域之上形成字线导体。 栅极晶体管的源极和漏极区域位于字线导体的相对侧。 沿着<100>晶面形成侧壁。 形成触点向下延伸到电介质层到台面。 衬底应力减小,因为形成在衬底中的大的有源区域区域确保在台面的<100>表面上形成的触点与形成在衬底上的台面接触,并且硅的<110>表面 台面与触点屏蔽。