Lateral flow atomic layer deposition apparatus and atomic layer deposition method using the same
    2.
    发明授权
    Lateral flow atomic layer deposition apparatus and atomic layer deposition method using the same 有权
    横流原子层沉积装置和使用其的原子层沉积方法

    公开(公告)号:US09062375B2

    公开(公告)日:2015-06-23

    申请号:US13587061

    申请日:2012-08-16

    IPC分类号: C23C16/00 C23C16/455

    摘要: A lateral flow atomic layer deposition (ALD) apparatus has two gas inflow channels and two gas outflow channels that are connected to two gas outlets that are symmetrically formed based on a substrate in which a thin film is deposited, thereby differently guiding a flow direction of a gas flowing on the substrate. Therefore, uniformity of a deposited film is improved, compared with the conventional lateral flow ALD apparatus in which a supplied source gas and reaction gas constantly flow in only one direction on the substrate.

    摘要翻译: 侧流原子层沉积(ALD)装置具有两个气体流入通道和两个气体流出通道,其连接到基于其中沉积薄膜的基底对称形成的两个气体出口,从而不同地引导流动方向 在基板上流动的气体。 因此,与供给的原料气体和反应气体在基板上仅沿一个方向恒定流动的常规侧流ALD装置相比,沉积膜的均匀性得到改善。

    Light-guiding structure, image sensor including the light-guiding structure, and processor-based system including the image sensor
    3.
    发明授权
    Light-guiding structure, image sensor including the light-guiding structure, and processor-based system including the image sensor 有权
    导光结构,包括导光结构的图像传感器和包括图像传感器的基于处理器的系统

    公开(公告)号:US08785992B2

    公开(公告)日:2014-07-22

    申请号:US13186667

    申请日:2011-07-20

    CPC分类号: H01L27/14629

    摘要: An example embodiment relates to a light-guiding structure. The light-guiding structure may include a bottom surface and a sidewall defined by a first, a second, and a third insulating layer disposed on a semiconductor substrate. The bottom surface may be parallel to a main surface of the semiconductor substrate and may be disposed in the first insulating layer. The sidewall may penetrate the second and third insulating layers to extend to the first insulating layer, and the sidewall may be tapered with respect to the main surface of semiconductor substrate. The light-guiding structure may be included in a image sensor. The image sensor may be included in a processor-based system.

    摘要翻译: 示例性实施例涉及导光结构。 导光结构可以包括由设置在半导体衬底上的第一,第二和第三绝缘层限定的底表面和侧壁。 底表面可以平行于半导体衬底的主表面并且可以设置在第一绝缘层中。 侧壁可以穿透第二和第三绝缘层以延伸到第一绝缘层,并且侧壁可以相对于半导体衬底的主表面是锥形的。 导光结构可以包括在图像传感器中。 图像传感器可以包括在基于处理器的系统中。

    Stiffener for vehicle
    5.
    发明授权
    Stiffener for vehicle 有权
    汽车增强器

    公开(公告)号:US08651558B2

    公开(公告)日:2014-02-18

    申请号:US12952813

    申请日:2010-11-23

    申请人: Jeong Ho Lee

    发明人: Jeong Ho Lee

    IPC分类号: B60R19/26 B60R19/18 B60J7/00

    摘要: A stiffener for a vehicle, may include a coupling stiffener part, an upper stiffener part extending integrally from an upper end of the coupling stiffener part, and protruding to a forward direction of the vehicle with a predetermined length, and a lower stiffener part extending integrally from a lower end of the coupling stiffener part, and protruding to the forward direction of the vehicle, with a predetermined length, wherein the coupling stiffener is secured to a bumper back beam, and wherein the upper stiffener part and the lower stiffener part are complementarily operated about the coupling stiffener part serving as a support shaft in a seesaw type manner to absorb shocks, in the event of a collision between the vehicle and a pedestrian.

    摘要翻译: 用于车辆的加强件可以包括联接加强件部分,从联接加强件部分的上端整体延伸并且以预定长度向车辆前方突出的上加强件部分和整体延伸的下加强件部分 从联轴器加强件部分的下端,以预定的长度向车辆的前方突出,其中,联接加强件固定在保险杠后梁上,并且其中上加强件和下加强件部分互补地 在车辆和行人之间发生碰撞的情况下,围绕作为支撑轴的联接加强件部件以跷跷板型方式操作以吸收冲击。

    THIN FILM TRANSISTOR AND METHOD OF MANUFACTURING THE SAME
    7.
    发明申请
    THIN FILM TRANSISTOR AND METHOD OF MANUFACTURING THE SAME 有权
    薄膜晶体管及其制造方法

    公开(公告)号:US20130175505A1

    公开(公告)日:2013-07-11

    申请号:US13584938

    申请日:2012-08-14

    IPC分类号: H01L29/78 H01L21/441

    CPC分类号: H01L51/0541

    摘要: A thin film transistor (“TFT”) includes a gate electrode, a gate insulating layer, a source electrode, a drain electrode and a semiconductor layer. The gate insulating layer is disposed on the gate electrode. The source electrode is disposed on the gate insulating layer. The drain electrode is disposed on the gate insulating layer. The drain electrode is spaced apart from the source electrode. The semiconductor layer is disposed on the gate insulating layer. The semiconductor layer makes contact with a side surface of the source electrode and a side surface of the drain electrode.

    摘要翻译: 薄膜晶体管(“TFT”)包括栅电极,栅极绝缘层,源电极,漏电极和半导体层。 栅极绝缘层设置在栅电极上。 源电极设置在栅极绝缘层上。 漏电极设置在栅极绝缘层上。 漏电极与源电极间隔开。 半导体层设置在栅极绝缘层上。 半导体层与源电极的侧面和漏电极的侧面接触。

    Anti-reflective image sensor
    8.
    发明授权
    Anti-reflective image sensor 有权
    防反射图像传感器

    公开(公告)号:US08471311B2

    公开(公告)日:2013-06-25

    申请号:US12836108

    申请日:2010-07-14

    IPC分类号: H01L31/062 H01L31/113

    摘要: An anti-reflective image sensor and method of fabrication are provided, the sensor including a substrate; first color sensing pixels disposed in the substrate; second color sensing pixels disposed in the substrate; third color sensing pixels disposed in the substrate; a first layer disposed directly on the first, second and third color sensing pixels; a second layer disposed directly on the first layer overlying the first, second and third color sensing pixels; and a third layer disposed directly on portions of the second layer overlying at least one of the first or second color sensing pixels, wherein the first layer has a first refractive index, the second layer has a second refractive index greater than the first refractive index, and the third layer has a third refractive index greater than the second refractive index.

    摘要翻译: 提供了抗反射图像传感器和制造方法,所述传感器包括基板; 设置在基板中的第一颜色感测像素; 设置在所述基板中的第二颜色感测像素; 设置在基板中的第三颜色感测像素; 直接设置在第一,第二和第三颜色感测像素上的第一层; 直接设置在覆盖第一,第二和第三颜色感测像素的第一层上的第二层; 以及第三层,其直接设置在所述第二层的覆盖所述第一或第二颜色感测像素中的至少一个的部分上,其中所述第一层具有第一折射率,所述第二层具有大于所述第一折射率的第二折射率, 并且第三层具有大于第二折射率的第三折射率。

    STORAGE APPARATUS FOR VEHICLE
    9.
    发明申请
    STORAGE APPARATUS FOR VEHICLE 有权
    车辆存放装置

    公开(公告)号:US20130088034A1

    公开(公告)日:2013-04-11

    申请号:US13323460

    申请日:2011-12-12

    IPC分类号: B60R11/00

    CPC分类号: B60R3/02 B60R7/00 B60R19/48

    摘要: A storage apparatus for a vehicle may include a rear back beam installed to be drawn out from a rear bumper while sliding to a rear side of the vehicle, and a pair of left and right storage boxes installed to be seated on the rear back beam and extending while sliding in a traverse direction of the vehicle when the rear back beam may be drawn out to the rear side of the vehicle.

    摘要翻译: 一种用于车辆的存储装置可以包括安装成从后保险杠引出的后后梁,同时滑动到车辆的后侧,以及一对安装在后后梁上的左右存储箱, 当后后梁可以被拉出到车辆的后侧时,在车辆的横向方向上滑动时延伸。