公开(公告)号：US08472237B2

公开(公告)日：2013-06-25

申请号：US12943465

申请日：2010-11-10

申请人： Jeong-hoon Oh ,  Kyung-chang Ryoo ,  Byung-gook Park ,  Kyung-seok Oh ,  In-gyu Baek

发明人： Jeong-hoon Oh ,  Kyung-chang Ryoo ,  Byung-gook Park ,  Kyung-seok Oh ,  In-gyu Baek

IPC分类号： G11C11/21

CPC分类号： G11C13/0002 ,  G11C13/0023 ,  G11C2213/71 ,  H01L27/101 ,  H01L27/102 ,  H01L27/2481 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/146

摘要： Example embodiments disclose a semiconductor device using resistive memory material layers and a method of driving the semiconductor device. The semiconductor device includes a plurality of memory cells. At least one memory cell includes a uni-polar variable resistor and a bi-polar variable resistor connected in series and configured to switch between low resistance states and high resistance states, respectively, according to an applied voltage.

摘要翻译： 示例性实施例公开了使用电阻性存储器材料层的半导体器件和驱动该半导体器件的方法。 半导体器件包括多个存储单元。 至少一个存储单元包括单极性可变电阻器和双极可变电阻器，其串联连接并且被配置为根据施加的电压分别在低电阻状态和高电阻状态之间切换。

公开(公告)号：US20070154367A1

公开(公告)日：2007-07-05

申请号：US11525031

申请日：2006-09-22

申请人： Jae Hyuk Jang ,  Woo Jae Kim ,  Jeong Hoon Oh ,  Chan Hwa Chung ,  Young Soo Oh ,  Jae Hyoung Gil

发明人： Jae Hyuk Jang ,  Woo Jae Kim ,  Jeong Hoon Oh ,  Chan Hwa Chung ,  Young Soo Oh ,  Jae Hyoung Gil

IPC分类号： B01J10/00 ,  A62D3/00

CPC分类号： B01J19/0093 ,  B01J2219/00783 ,  B01J2219/00824 ,  B01J2219/00835 ,  B01J2219/00873 ,  B01J2219/00891 ,  C01B3/384 ,  C01B2203/0227 ,  C01B2203/044 ,  C01B2203/047 ,  C01B2203/066 ,  C01B2203/085 ,  C01B2203/1041 ,  C01B2203/107 ,  C01B2203/1076 ,  C01B2203/1288 ,  C01B2203/1604

摘要： The invention relates to a reforming apparatus made of LTCC and a manufacturing method therefor. The reforming apparatus includes an upper cover made of ceramic material, having a fuel inlet at one side thereof, and an evaporator made of ceramic layers formed integrally with the upper cover, having a flow path to gasify fuel introduced through the upper cover. In the reforming apparatus, a reformer made of ceramic layers is formed at one side of the evaporator, having a catalyst in a flow path thereof to reform fuel gas entering from the evaporator into hydrogen. A CO remover made of ceramic layers is formed integrally with the reformer, having a catalyst to remove CO from reformed gas entering from the reformer. A lower cover is formed integrally at one side of the CO remover, having a reformed gas outlet to emit the reformed gas to the outside.

摘要翻译： 本发明涉及一种由LTCC制成的重整装置及其制造方法。 重整装置包括由陶瓷材料制成的上盖，在其一侧具有燃料入口，以及由与上盖一体形成的陶瓷层制成的蒸发器，具有使通过上盖引入的燃料气化的流路。 在重整装置中，在蒸发器的一侧形成由陶瓷层构成的重整器，在其流路中具有催化剂，将从蒸发器进入的燃料气体重整成氢。 与重整器一体地形成由陶瓷层制成的CO去除剂，其具有从重整器进入的重整气体中除去CO的催化剂。 在CO去除剂的一侧整体地形成下盖，其具有重整气体出口，以将重整气体排出到外部。

公开(公告)号：US20110170331A1

公开(公告)日：2011-07-14

申请号：US12943465

申请日：2010-11-10

申请人： Jeong-hoon OH ,  Kyung-chang Ryoo ,  Byung-gook Park ,  Kyung-seok Oh ,  In-gyu Baek

发明人： Jeong-hoon OH ,  Kyung-chang Ryoo ,  Byung-gook Park ,  Kyung-seok Oh ,  In-gyu Baek

IPC分类号： G11C11/00 ,  H01L45/00

CPC分类号： G11C13/0002 ,  G11C13/0023 ,  G11C2213/71 ,  H01L27/101 ,  H01L27/102 ,  H01L27/2481 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/146

摘要： Example embodiments disclose a semiconductor device using resistive memory material layers and a method of driving the semiconductor device. The semiconductor device includes a plurality of memory cells. At least one memory cell includes a uni-polar variable resistor and a bi-polar variable resistor connected in series and configured to switch between low resistance states and high resistance states, respectively, according to an applied voltage.

摘要翻译： 示例性实施例公开了使用电阻性存储器材料层的半导体器件和驱动该半导体器件的方法。 半导体器件包括多个存储单元。 至少一个存储单元包括单极性可变电阻器和双极可变电阻器，其串联连接并且被配置为根据施加的电压分别在低电阻状态和高电阻状态之间切换。

公开(公告)号：US06607983B1

公开(公告)日：2003-08-19

申请号：US09707353

申请日：2000-11-06

申请人： Kwang-Youl Chun ,  Yun-Jae Lee ,  Won-Seong Lee ,  Jeong-Hoon Oh ,  Kyu-Hyun Lee

发明人： Kwang-Youl Chun ,  Yun-Jae Lee ,  Won-Seong Lee ,  Jeong-Hoon Oh ,  Kyu-Hyun Lee

IPC分类号： H01L21461

CPC分类号： H01L21/02063 ,  H01L21/31116 ,  H01L21/76802 ,  H01L21/76838 ,  H01L27/10852 ,  H01L27/10894 ,  H01L28/91

摘要： The present invention provides a method of eliminating or covering a defect source in a wafer edge region for semiconductor fabrication. During the etching process of a sacrificial oxide layer for storage node openings, the sacrificial oxide layer has a rumple topology in the wafer edge region due to etching non-uniformity of a photoresist layer formed on the sacrificial oxide layer. Subsequent deposition of a conductive layer and planarization etching, the conductive layer undesirably remains at the wafer edge region as a defect source. Such conductive contaminant particles dislodge, causing many problems in the wafer main region. The present invention removes such a defect source via two methods. One is to directly remove the defect source using a photoresist pattern exposing thereof. The other is to fix the defect source in place in the wafer edge region by protecting thereof by a photoresist pattern during subsequent cleaning processes.

摘要翻译： 本发明提供一种消除或覆盖用于半导体制造的晶片边缘区域中的缺陷源的方法。 在用于存储节点开口的牺牲氧化物层的蚀刻工艺期间，由于蚀刻在牺牲氧化物层上形成的光致抗蚀剂层的不均匀性，牺牲氧化物层在晶片边缘区域中具有隆起的拓扑结构。 随后沉积导电层和平坦化蚀刻，导电层不期望地保留在晶片边缘区域作为缺陷源。 这种导电性污染物颗粒移动，在晶片主区域引起许多问题。 本发明通过两种方法去除这种缺陷源。 一个是使用其曝光的光致抗蚀剂图案直接去除缺陷源。 另一种是通过在随后的清洁过程中通过光致抗蚀剂图案的保护来将缺陷源固定在晶片边缘区域中。