公开(公告)号：US20050117443A1

公开(公告)日：2005-06-02

申请号：US10997835

申请日：2004-11-24

Applicant: Weon-ho Park ,  Byoung-ho Kim ,  Hyun-khe Yoo ,  Seung-beom Yoon ,  Sung-chul Park ,  Ju-ri Kim ,  Kwang-tae Kim ,  Jeong-wook Han

Inventor： Weon-ho Park ,  Byoung-ho Kim ,  Hyun-khe Yoo ,  Seung-beom Yoon ,  Sung-chul Park ,  Ju-ri Kim ,  Kwang-tae Kim ,  Jeong-wook Han

IPC: H01L27/115 ,  G11C8/02 ,  H01L21/8247

CPC classification number: H01L27/11524 ,  H01L27/105 ,  H01L27/11521 ,  H01L27/11526 ,  H01L27/11546

Abstract: Provided are an EEPROM cell, an EEPROM device, and methods of manufacturing the EEPROM cell and the EEPROM device. The EEPROM cell is formed on a substrate including a first region and a second region. A first EEPROM device having a first select transistor and a first memory transistor is disposed in the first region, while a second EEPROM device having a second select transistor and a second memory transistor is disposed in the second region. In the first region, a first drain region and a second floating region are formed apart from each other. In the second region, a second drain region and a second floating region are formed apart from each other. A first impurity region, a second impurity region, and a third impurity region are disposed in a common source region between the first and second regions of the substrate. The first and third impurity regions form a DDD structure, and the first and second impurity region form an LDD structure. That is, the first impurity region completely surrounds the second and third impurity regions in horizontal and vertical directions, the second impurity region surrounds the third impurity region in a horizontal direction, and the junction depth of the third impurity is greater than that of the second impurity region.

Abstract translation: 提供了EEPROM单元，EEPROM器件以及EEPROM单元和EEPROM器件的制造方法。 EEPROM单元形成在包括第一区域和第二区域的衬底上。 具有第一选择晶体管和第一存储晶体管的第一EEPROM器件设置在第一区域中，而具有第二选择晶体管和第二存储晶体管的第二EEPROM器件设置在第二区域中。 在第一区域中，第一漏极区域和第二浮动区域彼此分开地形成。 在第二区域中，第二漏极区域和第二浮动区域彼此分开地形成。 第一杂质区域，第二杂质区域和第三杂质区域设置在基板的第一和第二区域之间的公共源极区域中。 第一和第三杂质区形成DDD结构，第一和第二杂质区形成LDD结构。 也就是说，第一杂质区域在水平和垂直方向上完全围绕第二和第三杂质区域，第二杂质区域在水平方向上包围第三杂质区域，并且第三杂质的结深度大于第二杂质区域的结深度 杂质区。

公开(公告)号：US20080132014A1

公开(公告)日：2008-06-05

申请号：US12012593

申请日：2008-02-04

Applicant: Weon-ho Park ,  Byoung-ho Kim ,  Hyun-khe Yoo ,  Seung-beom Yoon ,  Sung-chul Park ,  Ju-ri Kim ,  Kwang-tae Kim ,  Jeong-wook Han

Inventor： Weon-ho Park ,  Byoung-ho Kim ,  Hyun-khe Yoo ,  Seung-beom Yoon ,  Sung-chul Park ,  Ju-ri Kim ,  Kwang-tae Kim ,  Jeong-wook Han

IPC: H01L21/336

CPC classification number: H01L27/11524 ,  H01L27/105 ,  H01L27/11521 ,  H01L27/11526 ,  H01L27/11546

Abstract: Provided are an EEPROM cell, an EEPROM device, and methods of manufacturing the EEPROM cell and the EEPROM device. The EEPROM cell is formed on a substrate including a first region and a second region. A first EEPROM device having a first select transistor and a first memory transistor is disposed in the first region, while a second EEPROM device having a second select transistor and a second memory transistor is disposed in the second region. In the first region, a first drain region and a second floating region are formed apart from each other. In the second region, a second drain region and a second floating region are formed apart from each other. A first impurity region, a second impurity region, and a third impurity region are disposed in a common source region between the first and second regions of the substrate. The first and third impurity regions form a DDD structure, and the first and second impurity region form an LDD structure. That is, the first impurity region completely surrounds the second and third impurity regions in horizontal and vertical directions, the second impurity region surrounds the third impurity region in a horizontal direction, and the junction depth of the third impurity is greater than that of the second impurity region.

Abstract translation: 提供了EEPROM单元，EEPROM器件以及EEPROM单元和EEPROM器件的制造方法。 EEPROM单元形成在包括第一区域和第二区域的基板上。 具有第一选择晶体管和第一存储晶体管的第一EEPROM器件设置在第一区域中，而具有第二选择晶体管和第二存储晶体管的第二EEPROM器件设置在第二区域中。 在第一区域中，分开形成第一漏极区域和第二浮动区域。 在第二区域中，第二漏极区域和第二浮动区域彼此分开地形成。 第一杂质区域，第二杂质区域和第三杂质区域设置在基板的第一和第二区域之间的公共源极区域中。 第一和第三杂质区形成DDD结构，第一和第二杂质区形成LDD结构。 也就是说，第一杂质区域在水平和垂直方向上完全围绕第二和第三杂质区域，第二杂质区域在水平方向上包围第三杂质区域，并且第三杂质的结深度大于第二杂质区域的结深度 杂质区。

公开(公告)号：US07352026B2

公开(公告)日：2008-04-01

申请号：US10997835

申请日：2004-11-24

Applicant: Weon-ho Park ,  Byoung-ho Kim ,  Hyun-khe Yoo ,  Seung-beom Yoon ,  Sung-chul Park ,  Ju-ri Kim ,  Kwang-tae Kim ,  Jeong-wook Han

Inventor： Weon-ho Park ,  Byoung-ho Kim ,  Hyun-khe Yoo ,  Seung-beom Yoon ,  Sung-chul Park ,  Ju-ri Kim ,  Kwang-tae Kim ,  Jeong-wook Han

IPC: H01L29/788 ,  H01L29/76

CPC classification number: H01L27/11524 ,  H01L27/105 ,  H01L27/11521 ,  H01L27/11526 ,  H01L27/11546

Abstract: Provided are an EEPROM cell, an EEPROM device, and methods of manufacturing the EEPROM cell and the EEPROM device. The EEPROM cell is formed on a substrate including a first region and a second region. A first EEPROM device having a first select transistor and a first memory transistor is disposed in the first region, while a second EEPROM device having a second select transistor and a second memory transistor is disposed in the second region. In the first region, a first drain region and a second floating region are formed apart from each other. In the second region, a second drain region and a second floating region are formed apart from each other. A first impurity region, a second impurity region, and a third impurity region are disposed in a common source region between the first and second regions of the substrate. The first and third impurity regions form a DDD structure, and the first and second impurity region form an LDD structure. That is, the first impurity region completely surrounds the second and third impurity regions in horizontal and vertical directions, the second impurity region surrounds the third impurity region in a horizontal direction, and the junction depth of the third impurity is greater than that of the second impurity region.

公开(公告)号：US07588983B2

公开(公告)日：2009-09-15

申请号：US12012593

申请日：2008-02-04

Applicant: Weon-ho Park ,  Byoung-ho Kim ,  Hyun-khe Yoon ,  Seung-beom Yoon ,  Sung-chul Park ,  Ju-ri Kim ,  Kwang-Tae Kim ,  Jeong-wook Han

Inventor： Weon-ho Park ,  Byoung-ho Kim ,  Hyun-khe Yoon ,  Seung-beom Yoon ,  Sung-chul Park ,  Ju-ri Kim ,  Kwang-Tae Kim ,  Jeong-wook Han

IPC: H01L21/336 ,  H01L21/8238

CPC classification number: H01L27/11524 ,  H01L27/105 ,  H01L27/11521 ,  H01L27/11526 ,  H01L27/11546

Abstract: Provided are an EEPROM cell, an EEPROM device, and methods of manufacturing the EEPROM cell and the EEPROM device. The EEPROM cell is formed on a substrate including a first region and a second region. A first EEPROM device having a first select transistor and a first memory transistor is disposed in the first region, while a second EEPROM device having a second select transistor and a second memory transistor is disposed in the second region. In the first region, a first drain region and a second floating region are formed apart from each other. In the second region, a second drain region and a second floating region are formed apart from each other. A first impurity region, a second impurity region, and a third impurity region are disposed in a common source region between the first and second regions of the substrate. The first and third impurity regions form a DDD structure, and the first and second impurity region form an LDD structure. That is, the first impurity region completely surrounds the second and third impurity regions in horizontal and vertical directions, the second impurity region surrounds the third impurity region in a horizontal direction, and the junction depth of the third impurity is greater than that of the second impurity region.

Abstract translation: 提供了EEPROM单元，EEPROM器件以及EEPROM单元和EEPROM器件的制造方法。 EEPROM单元形成在包括第一区域和第二区域的基板上。 具有第一选择晶体管和第一存储晶体管的第一EEPROM器件设置在第一区域中，而具有第二选择晶体管和第二存储晶体管的第二EEPROM器件设置在第二区域中。 在第一区域中，分开形成第一漏极区域和第二浮动区域。 在第二区域中，第二漏极区域和第二浮动区域彼此分开地形成。 第一杂质区域，第二杂质区域和第三杂质区域设置在基板的第一和第二区域之间的公共源极区域中。 第一和第三杂质区形成DDD结构，第一和第二杂质区形成LDD结构。 也就是说，第一杂质区域在水平和垂直方向上完全围绕第二和第三杂质区域，第二杂质区域在水平方向上包围第三杂质区域，并且第三杂质的结深度大于第二杂质区域的结深度 杂质区。