公开(公告)号：US20220407286A1

公开(公告)日：2022-12-22

申请号：US17774808

申请日：2019-03-21

申请人： Jeongsoo KIM

发明人： Jeongsoo KIM

IPC分类号： H01S5/00 ,  H01S5/02326

摘要： Disclosed are an optical device capable of precise adjustment of optical output intensity, and a method for manufacturing an optical device. An optical device including a laser diode, according to one aspect of the present embodiment, comprises: a laser diode for outputting light having a predetermined wavelength; an optical output unit in which output light of the laser diode is optically coupled and the output of the optical device takes place; and an optical isolator disposed between the laser diode and the optical output unit. The output light of the laser diode passes through the optical isolator and the output of the optical device takes place through the optical output unit, and the intensity of the output light of the optical device is determined by the rotation of the optical isolator.

公开(公告)号：US20200213010A1

公开(公告)日：2020-07-02

申请号：US16634157

申请日：2018-07-27

申请人： Jeongsoo KIM

发明人： Jeongsoo KIM

IPC分类号： H04B10/564 ,  H04B10/50 ,  H04B10/69 ,  H04B10/572

摘要： The present invention provides an optical transmitter including a semiconductor laser and a control method thereof for preventing crosstalk between channels in an NG-PON2 with a 100 GHz channel spacing by reducing a wavelength drift of the semiconductor laser. The wavelength drift occurs between a few nanoseconds and a few hundreds nanoseconds from the beginning of a burst when the semiconductor laser is operated in a burst-mode.

公开(公告)号：US09947684B2

公开(公告)日：2018-04-17

申请号：US15241781

申请日：2016-08-19

申请人： Joyoung Park ,  Yong-Hyun Kwon ,  Jeongsoo Kim ,  Seok-Won Lee ,  Jinwoo Park ,  Oik Kwon ,  Seungpil Chung

发明人： Joyoung Park ,  Yong-Hyun Kwon ,  Jeongsoo Kim ,  Seok-Won Lee ,  Jinwoo Park ,  Oik Kwon ,  Seungpil Chung

IPC分类号： H01L27/11 ,  H01L27/11582 ,  H01L27/11568

CPC分类号： H01L27/11582 ,  H01L27/11565 ,  H01L27/11568 ,  H01L27/1157 ,  H01L27/11575

摘要： A semiconductor device includes a substrate including a cell region and a connection region. A stack is disposed on the substrate. A vertical channel structure penetrates the stack in the cell region. The stack includes electrode patterns and insulating patterns which are alternatingly and repeatedly stacked on the substrate. Each of the electrode patterns may extend in a first direction and include a pad portion. The pad portion is positioned in the connection region. The pad portion includes a first sidewall and a second sidewall that extend in the first direction on opposite sides of the pad portion. The first sidewall has a recessed portion that is recessed in a second direction crossing the first direction toward the second sidewall.

公开(公告)号：US11444698B2

公开(公告)日：2022-09-13

申请号：US17118625

申请日：2020-12-11

申请人： Jeongsoo Kim ,  PICadvanced S.A.

发明人： Jeongsoo Kim

IPC分类号： H04B10/08 ,  H04B10/564 ,  H04B10/50 ,  H04B10/572 ,  H04B10/69 ,  H01S5/024 ,  H01S5/042 ,  H01S5/06 ,  H01S5/062 ,  H01S5/0683

摘要： The present invention provides an optical transmitter including a semiconductor laser and a control method thereof for preventing crosstalk between channels in an NG-PON2 with a 100 GHz channel spacing by reducing a wavelength drift of the semiconductor laser. The wavelength drift occurs between a few nanoseconds and a few hundreds of nanoseconds from the beginning of a burst when the semiconductor laser is operated in a burst-mode.

公开(公告)号：US20210111536A1

公开(公告)日：2021-04-15

申请号：US17118625

申请日：2020-12-11

申请人： Jeongsoo KIM ,  PICadvanced S.A.

发明人： Jeongsoo KIM

IPC分类号： H01S5/062 ,  H01S5/024 ,  H01S5/042 ,  H01S5/06 ,  H01S5/0683 ,  H04B10/564

摘要： The present invention provides an optical transmitter including a semiconductor laser and a control method thereof for preventing crosstalk between channels in an NG-PON2 with a 100 GHz channel spacing by reducing a wavelength drift of the semiconductor laser. The wavelength drift occurs between a few nanoseconds and a few hundreds of nanoseconds from the beginning of a burst when the semiconductor laser is operated in a burst-mode.

公开(公告)号：US20170179149A1

公开(公告)日：2017-06-22

申请号：US15241781

申请日：2016-08-19

申请人： JOYOUNG PARK ,  YONG-HYUN KWON ,  JEONGSOO KIM ,  SEOK-WON LEE ,  JINWOO PARK ,  OIK KWON ,  SEUNGPIL CHUNG

发明人： JOYOUNG PARK ,  YONG-HYUN KWON ,  JEONGSOO KIM ,  SEOK-WON LEE ,  JINWOO PARK ,  OIK KWON ,  SEUNGPIL CHUNG

IPC分类号： H01L27/115

CPC分类号： H01L27/11582 ,  H01L27/11565 ,  H01L27/11568 ,  H01L27/1157 ,  H01L27/11575

摘要： A semiconductor device includes a substrate including a cell region and a connection region. A stack is disposed on the substrate. A vertical channel structure penetrates the stack in the cell region. The stack includes electrode patterns and insulating patterns which are alternatingly and repeatedly stacked on the substrate. Each of the electrode patterns may extend in a first direction and include a pad portion. The pad portion is positioned in the connection region. The pad portion includes a first sidewall and a second sidewall that extend in the first direction on opposite sides of the pad portion. The first sidewall has a recessed portion that is recessed in a second direction crossing the first direction toward the second sidewall.

公开(公告)号：US10931378B2

公开(公告)日：2021-02-23

申请号：US16634157

申请日：2018-07-27

申请人： Jeongsoo Kim

发明人： Jeongsoo Kim

IPC分类号： H04B10/04 ,  H04B10/564 ,  H04B10/50 ,  H04B10/572 ,  H04B10/69

摘要： The present invention provides an optical transmitter including a semiconductor laser and a control method thereof for preventing crosstalk between channels in an NG-PON2 with a 100 GHz channel spacing by reducing a wavelength drift of the semiconductor laser. The wavelength drift occurs between a few nanoseconds and a few hundreds nanoseconds from the beginning of a burst when the semiconductor laser is operated in a burst-mode.