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    Multiple wavelength light emitting device, electronic apparatus, and interference mirror
    1.
    再颁专利
    Multiple wavelength light emitting device, electronic apparatus, and interference mirror 有权
    多波长发光器件，电子设备和干涉镜

    公开(公告)号：USRE45442E1

    公开(公告)日：2015-03-31

    申请号：US13085129

    申请日：2011-04-12

    申请人： Tatsuya Shimoda ,  Tomoko Koyama ,  Takeo Kaneko ,  Jeremy Henley Burroughes

    发明人： Tatsuya Shimoda ,  Tomoko Koyama ,  Takeo Kaneko ,  Jeremy Henley Burroughes

    IPC分类号： H05B33/00

    摘要： A multiple wavelength light emitting device is provided wherewith the resonance strength and directivity between colors can be easily adjusted for balance. This light emitting device comprises a light emission means 4 for emitting light containing wavelength components to be output, and a semi-reflecting layer group 2 wherein semi-reflecting layers 2R, 2G, and 2B that transmit some light having specific wavelengths emitted from the light emission means and reflect the remainder are stacked up in order in the direction of light advance in association with wavelengths of light to be output. Light emission regions AR, AG, and AB are determined in association with the wavelengths of light to be output. The configuration is such that, in the light emission regions, the distances LR, LG and LB between a reflecting surface for fight from the light emission means side of the semi-reflecting layers 2R, 2G, and 2B that reflect light output from those light emission regions and a point existing in an interval from the end of the light emitting layer on the semi-reflecting layer group side to the reflecting layer are adjusted so as to have an optical path length at which that light resonates.

    摘要翻译： 提供了多波长发光器件，其中可以容易地调节颜色之间的共振强度和方向性。 该发光装置包括用于发射包含要输出的波长分量的光的发光装置4和半反射层组2，其中透射从光发射的具有特定波长的一些光的半反射层2R，2G和2B 发射装置和反射余下部分依次输出的光的波长与光的前进方向重叠。 与要输出的光的波长相关联地确定发光区域AR，AG和AB。 该配置使得在发光区域中，从反射从这些光输出的光的半反射层2R，2G和2B的发光装置侧的反射面之间的距离LR，LG和LB 发光区域和从半反射层组侧的发光层的端部到反射层的间隔中存在的点被调节为具有该光共振的光程长度。

    Method of Fabricating Top Gate Organic Semiconductor Transistors
    3.
    发明申请
    Method of Fabricating Top Gate Organic Semiconductor Transistors 审中-公开
    制造顶栅有机半导体晶体管的方法

    公开(公告)号：US20110053314A1

    公开(公告)日：2011-03-03

    申请号：US12866691

    申请日：2009-02-06

    申请人： Jeremy Henley Burroughes ,  Gregory Whiting ,  Jonathan J. Halls

    发明人： Jeremy Henley Burroughes ,  Gregory Whiting ,  Jonathan J. Halls

    IPC分类号： H01L51/40

    CPC分类号： H01L51/0541 ,  H01L27/283 ,  H01L51/0017

    摘要： The present invention provides a method of fabricating a top-gate organic semiconductor transistor comprising: providing a substrate; depositing a source and drain electrode over the substrate; depositing an organic semiconductor material in a channel between the source and drain electrode and over at least a portion of the source and drain electrodes; depositing a dielectric material over the organic semiconductor material; depositing a gate electrode over the dielectric material and organic semiconductor material in the channel; removing a portion of the dielectric material and organic semiconductor material, wherein the gate electrode acts as a mask to shield the underlying organic semiconductor material and dielectric material during the step of removing.

    摘要翻译： 本发明提供一种制造顶栅有机半导体晶体管的方法，包括：提供衬底; 在所述衬底上沉积源极和漏极; 将有机半导体材料沉积在源电极和漏电极之间的沟道中以及在源电极和漏电极的至少一部分上方; 在所述有机半导体材料上沉积电介质材料; 在沟道中的电介质材料和有机半导体材料上沉积栅电极; 去除介电材料和有机半导体材料的一部分，其中栅极用作掩模以在去除步骤期间屏蔽下面的有机半导体材料和电介质材料。

    Electroluminescent devices
    5.
    发明授权
    Electroluminescent devices 有权
    电致发光器件

    公开(公告)号：US07078251B2

    公开(公告)日：2006-07-18

    申请号：US10682204

    申请日：2003-10-10

    申请人： Jeremy Henley Burroughes ,  Richard Henry Friend ,  Christopher John Bright ,  David John Lacey ,  Peter Devine

    发明人： Jeremy Henley Burroughes ,  Richard Henry Friend ,  Christopher John Bright ,  David John Lacey ,  Peter Devine

    IPC分类号： H01L21/00

    CPC分类号： H01L51/5024 ,  C08G2261/3142 ,  C08G2261/3162 ,  C08G2261/3246 ,  H01L51/0003 ,  H01L51/0039 ,  H01L51/0043 ,  H01L51/5004 ,  H01L51/5056 ,  H01L51/5072 ,  H01L2251/5384

    摘要： An electroluminescent device comprising: a first charge carrier injecting layer for injecting positive charge carriers; a second charge carrier injecting layer for injecting negative charge carriers; and a light-emissive layer located between the charge carrier injecting layers and comprising a mixture of: a first component for accepting positive charge carriers from the first charge carrier injecting layer; a second component for accepting negative charge carriers from the second charge carrier injecting layer; and a third, organic light-emissive component for generating light as a result of combination of charge carriers from the first and second components; at least one of the first, second and third components forming a type II semiconductor interface with another of the first, second and third components.

    摘要翻译： 一种电致发光器件，包括：用于注入正电荷载流子的第一电荷载流子注入层; 用于注入负电荷载流子的第二载流子注入层; 以及位于电荷载体注入层之间并包含以下混合物的发光层：用于从第一电荷载流子注入层接收正电荷载流子的第一组分; 用于从第二电荷载流子注入层接收负电荷载流子的第二组分; 以及第三有机发光部件，用于通过从第一和第二部件组合电荷载体而产生光; 所述第一，第二和第三部件中的至少一个与所述第一，第二和第三部件中的另一个部件形成II型半导体界面。

    Multiple wavelength light emitting device, electronic apparatus, and interference mirror
    6.
    发明授权
    Multiple wavelength light emitting device, electronic apparatus, and interference mirror 有权
    多波长发光器件，电子设备和干涉镜

    公开(公告)号：US06791261B1

    公开(公告)日：2004-09-14

    申请号：US09980100

    申请日：2002-03-08

    申请人： Tatsuya Shimoda ,  Tomoko Koyama ,  Takeo Kaneko ,  Jeremy Henley Burroughes

    发明人： Tatsuya Shimoda ,  Tomoko Koyama ,  Takeo Kaneko ,  Jeremy Henley Burroughes

    IPC分类号： H01L5120

    CPC分类号： H01L51/5265 ,  G02B5/285 ,  H01L27/3211 ,  H01L27/3281 ,  H01L51/5036

    摘要： A multiple wavelength light emitting device is provided wherewith the resonance strength and directivity between colors can be easily adjusted for balance. This light emitting device comprises a light emission means 4 for emitting light containing wavelength components to be output, and a semi-reflecting layer group 2 wherein semi-reflecting layers 2R, 2G, and 2B that transmit some light having specific wavelengths emitted from the light emission means and reflect the remainder are stacked up in order in the direction of light advance in association with wavelengths of light to be output. Light emission regions AR, AG, and AB are determined in association with the wavelengths of light to be output. The configuration is such that, in the light emission regions, the distances LR, LG and LB between a reflecting surface for fight from the light emission means side of the semi-reflecting layers 2R, 2G, and 2B that reflect light output from those light emission regions and a point existing in an interval from the end of the light emitting layer on the semi-reflecting layer group side to the reflecting layer are adjusted so as to have an optical path length at which that light resonates.

    摘要翻译： 提供了多波长发光器件，其中可以容易地调节颜色之间的共振强度和方向性。 该发光装置包括用于发射包含要输出的波长分量的光的发光装置4和半反射层组2，其中透射从光发射的具有特定波长的一些光的半反射层2R，2G和2B 发射装置和反射余下部分依次输出的光的波长与光的前进方向重叠。 与要输出的光的波长相关联地确定发光区域AR，AG和AB。 该配置使得在发光区域中，从反射从这些光输出的光的半反射层2R，2G和2B的发光装置侧的反射面之间的距离LR，LG和LB 发光区域和从半反射层组侧的发光层的端部到反射层的间隔中存在的点被调节为具有该光共振的光程长度。

    Thin film transistor
    8.
    发明授权
    Thin film transistor 有权
    薄膜晶体管

    公开(公告)号：US08642379B2

    公开(公告)日：2014-02-04

    申请号：US12524023

    申请日：2008-04-03

    申请人： Sadayoshi Hotta ,  Jeremy Henley Burroughes ,  Gregory Lewis Whiting

    发明人： Sadayoshi Hotta ,  Jeremy Henley Burroughes ,  Gregory Lewis Whiting

    IPC分类号： H01L51/30

    CPC分类号： H01L27/3274 ,  H01L21/31683 ,  H01L51/0541 ,  H01L51/105 ,  H01L51/5206

    摘要： A method of making a top-gate organic thin film transistor, comprising forming source and drain contacts on a substrate; oxidizing portions of the source and drain contacts; depositing an organic semiconductor layer to form a bridge between the oxidized portions of the source and drain contacts; depositing a gate insulating layer over the organic semiconductor layer; and forming a gate electrode over the gate insulating layer.

    摘要翻译： 一种制造顶栅有机薄膜晶体管的方法，包括在衬底上形成源极和漏极接触; 氧化源极和漏极接触部分; 沉积有机半导体层以在源极和漏极触点的氧化部分之间形成桥; 在所述有机半导体层上沉积栅极绝缘层; 以及在所述栅绝缘层上形成栅电极。