公开(公告)号：US20070264597A1

公开(公告)日：2007-11-15

申请号：US11803448

申请日：2007-05-14

申请人： Jian-Jhong Fu

发明人： Jian-Jhong Fu

IPC分类号： G03C5/00

CPC分类号： G02F1/133555 ,  G02F2001/13625 ,  H01L27/124 ,  H01L27/1288

摘要： An exemplary method for fabricating a transflective liquid crystal display device includes: (1) forming a first metal layer on a substrate and conducting a lithography and etching process so as to define a gate and protrusions within a thin film transistor (TFT) region and a reflection region separately; (2) forming a gate insulator over the substrate; (3) forming a semiconductor pattern within the TFT region; (4) forming a source and a drain of the thin film transistor; (5) forming a passivation layer and a contact hole so as to expose the drain through the contact hole; and (6) forming a transmission pixel electrode within a transmission region and a reflection pixel electrode within the reflection region.

摘要翻译： 用于制造半透射型液晶显示装置的示例性方法包括：（1）在基板上形成第一金属层并进行光刻和蚀刻工艺，以在薄膜晶体管（TFT）区域内限定栅极和突起，并且 反射区域; （2）在衬底上形成栅极绝缘体; （3）在TFT区域内形成半导体图案; （4）形成薄膜晶体管的源极和漏极; （5）形成钝化层和接触孔，以便通过接触孔露出排水口; 以及（6）在透射区域内形成透射像素电极和反射区域内的反射像素电极。

公开(公告)号：US20130002997A1

公开(公告)日：2013-01-03

申请号：US13536209

申请日：2012-06-28

申请人： Chao-Liang LU ,  Hsin-Li CHEN ,  Jian-Jhong FU ,  Hao-Ching CHIEN ,  Tsau-Hua HSIEH ,  Hung-Yu CHEN ,  Chiu-Lien YANG ,  Jia-Pang PANG

发明人： Chao-Liang LU ,  Hsin-Li CHEN ,  Jian-Jhong FU ,  Hao-Ching CHIEN ,  Tsau-Hua HSIEH ,  Hung-Yu CHEN ,  Chiu-Lien YANG ,  Jia-Pang PANG

IPC分类号： G02F1/1335

CPC分类号： G02F1/13338 ,  G02B1/105 ,  G02B1/14 ,  G02F1/133509 ,  G02F1/133528 ,  G02F2001/133302 ,  G06F3/041 ,  G06F3/0412

摘要： A touching display panel and a display device using the same are provided. The touching display panel includes a liquid crystal layer, a first substrate having a hard surface structure, a second substrate, a touch sensor layer, a thin-film transistor layer, and a color filter layer. The first and second substrates are respectively disposed at two sides of the liquid crystal layer. The touch sensor layer is disposed between the first substrate and the liquid crystal layer, and is formed on the first substrate. The thin-film transistor layer and the color filter layer are both disposed between the first substrate and the second substrate. At least one of the thin-film transistor layer and the color filter layer is formed on the first substrate.

公开(公告)号：US07989142B2

公开(公告)日：2011-08-02

申请号：US11725700

申请日：2007-03-19

申请人： Jian-Jhong Fu

发明人： Jian-Jhong Fu

IPC分类号： H01L29/10 ,  H01L21/02

CPC分类号： H01L27/1288 ,  H01L27/12 ,  H01L27/1214

摘要： An exemplary method for fabricating a TFT array substrate includes providing an insulating substrate (201); coating a gate metal layer (202) on the substrate; forming a plurality of gate electrodes (212) using a first photo-mask process; forming a gate insulating layer (203), a semiconducting layer (205), and a source/drain metal layer (206) on the substrate having the gate electrodes; forming a plurality of source electrodes (217) and a plurality of drain electrodes (218) using a second photo-mask process; forming a passivation material layer (209) and a photo resist layer on the gate insulating layer, the source electrodes and the drain electrodes; forming a passivation layer (219) and the photo resist pattern (234) using a third photo-mask process; forming a transparent conductive metal layer (204) on the photo resist pattern, the drain electrode and the gate insulating layer; and forming a pixel electrode (214) through removing the photo resist pattern.

摘要翻译： 一种用于制造TFT阵列基板的示例性方法，包括提供绝缘基板（201）; 在基板上涂覆栅极金属层（202）; 使用第一光掩模工艺形成多个栅电极（212）; 在具有栅电极的基板上形成栅极绝缘层（203），半导体层（205）和源极/漏极金属层（206） 使用第二光掩模工艺形成多个源电极（217）和多个漏电极（218）; 在所述栅极绝缘层，所述源电极和所述漏电极上形成钝化材料层（209）和光致抗蚀剂层; 使用第三光掩模工艺形成钝化层（219）和光刻胶图案（234）; 在所述光致抗蚀剂图案，所述漏电极和所述栅极绝缘层上形成透明导电金属层（204）; 以及通过去除光致抗蚀剂图案形成像素电极（214）。

公开(公告)号：US07697104B2

公开(公告)日：2010-04-13

申请号：US11784945

申请日：2007-04-09

申请人： Jian-Jhong Fu

发明人： Jian-Jhong Fu

IPC分类号： G02F1/1339

CPC分类号： G02F1/1339 ,  G02F1/1345 ,  G02F1/136286

摘要： An exemplary sealing structure of a liquid crystal panel (2) is provided. The liquid crystal panel includes a pair of substrates (21, 22) and a liquid crystal layer (23) between the substrates. The scaling structure includes: a multi-layer structure (25) having a first layer (222) formed above one of the substrates and a second layer (223) formed above the first layer; an opening structure (226) having a first opening (226a) in the first layer and a second opening (226b) in the second layer and formed at the multi-layer structure. The first opening and the second opening are aligned with each other, the first opening is larger than the second opening, and a sealant (23) is sandwiched between the substrates, including in the opening structure. The adherence of the two substrates is improved.

摘要翻译： 提供液晶面板（2）的示例性密封结构。 液晶面板包括在基板之间的一对基板（21,22）和液晶层（23）。 缩放结构包括：具有在一个基板上形成的第一层（222）和形成在第一层之上的第二层（223）的多层结构（25） 在第一层中具有第一开口（226a）的开口结构（226）和在第二层中形成多层结构的第二开口（226b）。 第一开口和第二开口彼此对准，第一开口大于第二开口，并且密封剂（23）夹在基板之间，包括在开口结构中。 改善了两种基材的粘附性。

公开(公告)号：US20070218581A1

公开(公告)日：2007-09-20

申请号：US11725700

申请日：2007-03-19

申请人： Jian-Jhong Fu

发明人： Jian-Jhong Fu

IPC分类号： H01L21/00

CPC分类号： H01L27/1288 ,  H01L27/12 ,  H01L27/1214

摘要： An exemplary method for fabricating a TFT array substrate includes providing an insulating substrate (201); coating a gate metal layer (202) on the substrate; forming a plurality of gate electrodes (212) using a first photo-mask process; forming a gate insulating layer (203), a semiconducting layer (205), and a source/drain metal layer (206) on the substrate having the gate electrodes; forming a plurality of source electrodes (217) and a plurality of drain electrodes (218) using a second photo-mask process; forming a passivation material layer (209) and a photo resist layer on the gate insulating layer, the source electrodes and the drain electrodes; forming a passivation layer (219) and the photo resist pattern (234) using a third photo-mask process; forming a transparent conductive metal layer (204) on the photo resist pattern, the drain electrode and the gate insulating layer; and forming a pixel electrode (214) through removing the photo resist pattern.

摘要翻译： 一种用于制造TFT阵列基板的示例性方法，包括提供绝缘基板（201）; 在所述基板上涂覆栅极金属层（202）; 使用第一光掩模工艺形成多个栅电极（212）; 在具有栅电极的基板上形成栅极绝缘层（203），半导体层（205）和源极/漏极金属层（206） 使用第二光掩模工艺形成多个源电极（217）和多个漏电极（218）; 在所述栅极绝缘层，所述源电极和所述漏电极上形成钝化材料层（209）和光致抗蚀剂层; 使用第三光掩模工艺形成钝化层（219）和光刻胶图案（234）; 在所述光致抗蚀剂图案，所述漏电极和所述栅绝缘层上形成透明导电金属层（204）; 以及通过去除光致抗蚀剂图案形成像素电极（214）。

公开(公告)号：US08749721B2

公开(公告)日：2014-06-10

申请号：US13536209

申请日：2012-06-28

申请人： Chao-Liang Lu ,  Hsin-Li Chen ,  Jian-Jhong Fu ,  Hao-Ching Chien ,  Tsau-Hua Hsieh ,  Hung-Yu Chen ,  Chiu-Lien Yang ,  Jia-Pang Pang

发明人： Chao-Liang Lu ,  Hsin-Li Chen ,  Jian-Jhong Fu ,  Hao-Ching Chien ,  Tsau-Hua Hsieh ,  Hung-Yu Chen ,  Chiu-Lien Yang ,  Jia-Pang Pang

IPC分类号： G02F1/1335

CPC分类号： G02F1/13338 ,  G02B1/105 ,  G02B1/14 ,  G02F1/133509 ,  G02F1/133528 ,  G02F2001/133302 ,  G06F3/041 ,  G06F3/0412

摘要： A touching display panel and a display device using the same are provided. The touching display panel includes a liquid crystal layer, a first substrate having a hard surface structure, a second substrate, a touch sensor layer, a thin-film transistor layer, and a color filter layer. The first and second substrates are respectively disposed at two sides of the liquid crystal layer. The touch sensor layer is disposed between the first substrate and the liquid crystal layer, and is formed on the first substrate. The thin-film transistor layer and the color filter layer are both disposed between the first substrate and the second substrate. At least one of the thin-film transistor layer and the color filter layer is formed on the first substrate.

公开(公告)号：US20070236643A1

公开(公告)日：2007-10-11

申请号：US11784945

申请日：2007-04-09

申请人： Jian-Jhong Fu

发明人： Jian-Jhong Fu

IPC分类号： G02F1/1339

CPC分类号： G02F1/1339 ,  G02F1/1345 ,  G02F1/136286

摘要： An exemplary sealing structure of a liquid crystal panel (2) is provided. The liquid crystal panel includes a pair of substrates (21, 22) and a liquid crystal layer (23) between the substrates. The sealing structure is including: a multi-layer structure (25) having a first layer (222) formed above one of the substrates and a second layer (223) formed above the first layer; an opening structure (226) having a first opening (226a) in the first layer and a second opening (226b) in the second layer and formed at the multi-layer structure; and wherein the first opening and the second opening are aligned with each other, the first opening is larger than the second opening, and a sealant (23) is sandwiched between the substrates, including in the opening structure. The adherence of the two substrates is improved.

摘要翻译： 提供液晶面板（2）的示例性密封结构。 液晶面板包括在基板之间的一对基板（21,22）和液晶层（23）。 密封结构包括：具有形成在一个基板上的第一层（222）和形成在第一层之上的第二层（223）的多层结构（25） 在第一层中具有第一开口（226a）的开口结构（226）和在第二层中形成多层结构的第二开口（226b）; 并且其中所述第一开口和所述第二开口彼此对齐，所述第一开口大于所述第二开口，并且密封剂（23）夹在所述基板之间，包括在所述开口结构中。 改善了两种基材的粘附性。

公开(公告)号：US20070146601A1

公开(公告)日：2007-06-28

申请号：US11644327

申请日：2006-12-22

申请人： Jian-Jhong Fu

发明人： Jian-Jhong Fu

IPC分类号： G02F1/1333

CPC分类号： G02F1/1362 ,  G02F1/133345 ,  G02F2202/103

摘要： An exemplary crystal panel (100) includes a first substrate (110), a second substrate (120) having a common electrode (121), and a liquid crystal layer (130) interposed therebetween. The first substrate defines a plurality of pixel regions. Each of the pixel regions includes a thin film transistor (140), a protection layer (170), a passivation layer (150), a pixel electrode (160). The thin film transistor includes a source (142), a gate (141), and a drain (143). The protection layer is formed at the gate insulating layer at a position corresponding to the drain. The passivation layer is formed at the thin film transistor, and the passivation layer has a contact hole (148) at position corresponding to the drain. The pixel electrode is formed at the passivation layer and the pixel electrode contacts the drain via the contract hole.

摘要翻译： 示例性晶体面板（100）包括第一基板（110），具有公共电极（121）的第二基板（120）和夹在其间的液晶层（130）。 第一衬底限定多个像素区域。 每个像素区域包括薄膜晶体管（140），保护层（170），钝化层（150），像素电极（160）。 薄膜晶体管包括源极（142），栅极（141）和漏极（143）。 保护层形成在与漏极对应的位置处的栅极绝缘层处。 钝化层形成在薄膜晶体管上，钝化层在与漏极对应的位置具有接触孔（148）。 像素电极形成在钝化层处，像素电极经由收缩孔接触排水口。