公开(公告)号：US20100327276A1

公开(公告)日：2010-12-30

申请号：US12831808

申请日：2010-07-07

申请人： Orin W. Holland ,  Terry D. Golding ,  John H. Dinan ,  Ronald Paul Hellmer

发明人： Orin W. Holland ,  Terry D. Golding ,  John H. Dinan ,  Ronald Paul Hellmer

IPC分类号： H01L29/22 ,  H01L21/30

CPC分类号： H01L31/1832 ,  H01L21/02381 ,  H01L21/0248 ,  H01L21/02562 ,  H01L21/02664 ,  H01L21/67115 ,  H01L31/1868 ,  Y02E10/50 ,  Y02P70/521

摘要： Apparatus and method to improve the operating parameters of HgCdTe-based optoelectric devices by the addition of hydrogen to passivate dislocation defects. A chamber and a UV light source are provided. The UV light source is configured to provide UV radiation within the chamber. The optoelectric device, which may comprise a HgCdTe semiconductor, is placed into the chamber and may be held in position by a sample holder. Hydrogen gas is introduced into the chamber. The material is irradiated within the chamber by the UV light source with the device and hydrogen gas present within the chamber to cause absorption of the hydrogen into the material.

摘要翻译： 通过添加氢来改善HgCdTe基光电器件的工作参数的设备和方法，以钝化位错缺陷。 提供了一个室和一个UV光源。 UV光源被配置为在腔室内提供UV辐射。 可以包括HgCdTe半导体的光电装置被放置在室中并且可以通过样品保持器保持就位。 氢气被引入腔室。 该材料通过UV光源在室内照射，该装置和存在于室内的氢气引起氢气吸收到材料中。

公开(公告)号：US06861208B2

公开(公告)日：2005-03-01

申请号：US10389760

申请日：2003-03-18

申请人： J. David Benson ,  John H. Dinan ,  Michael Martinka ,  Leo Anthony Almeida ,  Phillip R. Boyd ,  Andrew J. Stoltz, Jr. ,  Andrew W. Kaleczyc

发明人： J. David Benson ,  John H. Dinan ,  Michael Martinka ,  Leo Anthony Almeida ,  Phillip R. Boyd ,  Andrew J. Stoltz, Jr. ,  Andrew W. Kaleczyc

IPC分类号： G03F7/023 ,  G03F7/32 ,  G03F7/26

CPC分类号： B82Y30/00 ,  B82Y10/00 ,  G03F7/023 ,  G03F7/322

摘要： A lithographic imaging method of the present invention includes the initial step of providing a substrate made from Mercury, Cadmium and Telluride materials (HgCdTe). The HgCdTe substrate is coated with a diazonaphthoquinone (DNQ) Novolak photoresist material to establish an imaging medium. The imaging medium is exposed to an image pattern and then developed in a tetra-methyl ammonium hydroxide (TMAH) solution. The TMAH solution includes a fullerene (C60) material dissolved therein to retard the subsequent etching of the imaging medium. The incorporation of fullerene into the photoresist material indirectly via the developing solution avoids the solubility and ultraviolet (UV) absorbance disadvantages inherent in adding fullerenes directly to the photoresist prior to placement on the substrate. After development, the imaging medium is etched to transfer the recorded image pattern to the substrate. The fullerene cooperates with the photoresist material to slow the etching process, which allows for a highly reticulated HgCdTe detectors and IR images having greatly enhanced resolution.

摘要翻译： 本发明的平版印刷成像方法包括提供由汞，镉和碲化物材料（HgCdTe）制成的基板的初始步骤。 用重氮萘酚（DNQ）酚醛清漆光致抗蚀剂材料涂覆HgCdTe基板以建立成像介质。 将成像介质暴露于图像图案，然后在四甲基氢氧化铵（TMAH）溶液中显影。 TMAH溶液包括溶解在其中的富勒烯（C60）材料，以延迟随后的成像介质的蚀刻。 通过显影液间接地将富勒烯掺入光致抗蚀剂材料中避免了在放置在基材上之前将富勒烯直接添加到光致抗蚀剂中的溶解度和紫外线（UV）吸收缺点。 显影后，对成像介质进行蚀刻，将记录的图像图案转印到基板上。 富勒烯与光致抗蚀剂材料配合以减缓蚀刻过程，这允许高度网状的HgCdTe检测器和具有大大提高的分辨率的IR图像。

公开(公告)号：US4689650A

公开(公告)日：1987-08-25

申请号：US783702

申请日：1985-10-03

申请人： John H. Dinan

发明人： John H. Dinan

IPC分类号： H01L21/363 ,  H01L31/0296 ,  H01L31/109 ,  H01L31/18 ,  H01L27/14 ,  H01L31/00

CPC分类号： H01L31/109 ,  H01L21/02395 ,  H01L21/02398 ,  H01L21/0248 ,  H01L21/02562 ,  H01L31/02966 ,  H01L31/1836 ,  Y02E10/50

摘要： Successive layers of a II-VI ternary buffer layer and a II-VI ternary nar-bandpass infrared-absorbing layer are grown by MBE on a III-V binary substrate with low surface defect density. The composition of the buffer layer is chosen to lattice match with the infrared-absorbing layer.

摘要翻译： 通过MBE在具有低表面缺陷密度的III-V二元基板上生长II-VI三元缓冲层和II-VI三元窄带通红外线吸收层的连续层。 选择缓冲层的组成以与红外线吸收层进行晶格匹配。

公开(公告)号：US4589192A

公开(公告)日：1986-05-20

申请号：US667699

申请日：1984-11-02

申请人： John H. Dinan ,  William A. Gutierrez

发明人： John H. Dinan ,  William A. Gutierrez

IPC分类号： H01L21/363 ,  H01L31/0296 ,  H01L31/18

CPC分类号： H01L31/02966 ,  H01L21/0248 ,  H01L21/02562 ,  H01L21/02658 ,  H01L21/02661 ,  H01L31/1804 ,  H01L31/1832 ,  Y02E10/547 ,  Y02P70/521

摘要： A method of making infrared detectors on a substrate of mercury cadmium turide (HgCdTe) or mercury zinc telluride (HgZnTe). The steps include those of preparing the substrate, etching and passivating it, and placing it in the ultra-high vaccuum environment of a molecular beam epitaxy apparatus. While in the apparatus, one or more layers of zinc cadmium telluride (ZnCdTe) are deposited. When the ZnCdTe deposition is finished, the substrate is removed from the apparatus and the detectors are delineated lithographically.

摘要翻译： 在碲化镉（HgCdTe）或汞碲化锌（HgZnTe）的基板上制造红外检测器的方法。 这些步骤包括制备基材，蚀刻和钝化它们并将其放置在分子束外延装置的超高真空环境中的步骤。 在该装置中，沉积了一层或多层碲化锌镉（ZnCdTe）层。 当ZnCdTe沉积完成时，将衬底从设备中去除，并且检测器被光刻地描绘。