公开(公告)号：US20110045171A1

公开(公告)日：2011-02-24

申请号：US12544110

申请日：2009-08-19

申请人： Fenton Read McFeely ,  Chih-Chao Yang ,  John Jcobs Yurkas

发明人： Fenton Read McFeely ,  Chih-Chao Yang ,  John Jcobs Yurkas

IPC分类号： B05D5/12

CPC分类号： C23C16/16 ,  C23C16/04 ,  C23C16/56 ,  H01L21/02068 ,  H01L21/28562 ,  H01L21/76849 ,  H01L21/7685

摘要： Techniques for forming a ruthenium (Ru) capping layer on a copper (Cu) wire are provided. In one aspect, a method of forming a Ru capping layer on at least one exposed surface of a Cu wire embedded in a dielectric structure includes the following steps. A first Ru layer is selectively deposited onto the Cu wire and the dielectric structure by chemical vapor deposition (CVD) for a period of time during which selective nucleation of the Ru occurs on the surface of the Cu wire. Any nucleated Ru present on the dielectric structure is oxidized. The oxidized Ru and an aqueous acid are contacted to remove the oxidized Ru from the dielectric structure based on a selectivity of the aqueous acid in dissolving the oxidized Ru. A second Ru layer is selectively deposited onto the first Ru layer by CVD to produce a thicker Ru layer. The steps of oxidizing and contacting the oxidized Ru and an aqueous acid are repeated until a Ru layer having a thickness that is suitable for use as a Ru capping layer on at least one exposed surface of the Cu wire embedded in the dielectric structure is achieved.

摘要翻译： 提供了在铜（Cu）线上形成钌（Ru）覆盖层的技术。 一方面，在嵌入电介质结构的Cu线的至少一个露出表面上形成Ru覆盖层的方法包括以下步骤。 通过化学气相沉积（CVD）在Cu线和电介质结构上选择性地将第一Ru层沉积在Cu线的表面上发生Ru的选择性成核的一段时间。 存在于电介质结构上的任何成核Ru被氧化。 接触氧化的Ru和酸水以从介电结构中除去氧化的Ru，这是基于酸水溶解氧化Ru的选择性。 通过CVD将第二Ru层选择性地沉积到第一Ru层上以产生更厚的Ru层。 重复氧化和接触氧化的Ru和酸性水的步骤，直到达到在埋入电介质结构的Cu线的至少一个暴露表面上适合用作Ru覆盖层的厚度的Ru层。