公开(公告)号：US06811714B1

公开(公告)日：2004-11-02

申请号：US09680777

申请日：2000-10-06

申请人： Jonathan F. Gorrell ,  Gordana S. Nielsen

发明人： Jonathan F. Gorrell ,  Gordana S. Nielsen

IPC分类号： C23F100

CPC分类号： B81C1/00928

摘要： A method of manufacturing a micromachined component includes using a first liquid to etch a first layer (140) located underneath a second layer (150), exposing the second layer to a second liquid that is inorganic and miscible in carbon dioxide, and supercritical drying the micromachined component with carbon dioxide.

摘要翻译： 一种制造微加工部件的方法包括使用第一液体来蚀刻位于第二层（150）下方的第一层（140），将第二层暴露于无机和可混溶于二氧化碳中的第二液体，并且超临界干燥 微加工成分与二氧化碳。

公开(公告)号：US06673667B2

公开(公告)日：2004-01-06

申请号：US09929021

申请日：2001-08-15

申请人： Jonathan F. Gorrell ,  Kenneth D. Cornett

发明人： Jonathan F. Gorrell ,  Kenneth D. Cornett

IPC分类号： H01L218244

CPC分类号： H01L21/8258 ,  H01L21/02381 ,  H01L21/02488 ,  H01L21/02505 ,  H01L21/02513 ,  H01L21/02521 ,  H01L27/0605

摘要： A method for manufacturing a monolithic apparatus including a plurality of materials presenting a plurality of coplanar lands includes the steps of: (a) providing a substrate constructed of a first material and presenting a first land; (b) trenching the substrate to effect a cavity appropriately dimensioned to receive a semiconductor structure in an orientation presenting a second land generally coplanar with the first land; (c) depositing an accommodating layer constructed of a second material on the substrate and within the cavity to establish a workpiece; (d) depositing a composition layer constructed of a third material on the substrate; (e) selectively removing portions of the composition layer and the accommodating layer to establish the semiconductor structure; (f) depositing a cap layer constructed of a fourth material on the workpiece; and (g) removing the cap layer to establish a substantially planar face displaced from the plurality of lands by a predetermined distance.

摘要翻译： 一种用于制造包括多个共面平面的多个材料的整体式装置的方法包括以下步骤：（a）提供由第一材料构成并呈现第一焊盘的基板; （b）将衬底开沟以实现适当尺寸的接纳半导体结构的空腔，所述半导体结构呈现出与第一焊盘大致共面的第二焊盘; （c）在所述基底上并在所述腔内沉积由第二材料构成的容纳层以建立工件; （d）在基板上沉积由第三材料构成的组合物层; （e）选择性地去除组合物层和容纳层的部分以建立半导体结构; （f）在工件上沉积由第四材料构成的盖层; 和（g）去除所述盖层以建立从所述多个焊盘移位预定距离的基本平坦的面。

公开(公告)号：US06228275B1

公开(公告)日：2001-05-08

申请号：US09208924

申请日：1998-12-10

申请人： Daniel J. Koch ,  Jonathan H. Hammond ,  Daniel N. Koury, Jr. ,  Jonathan F. Gorrell

发明人： Daniel J. Koch ,  Jonathan H. Hammond ,  Daniel N. Koury, Jr. ,  Jonathan F. Gorrell

IPC分类号： H01L21302

CPC分类号： G01P15/0802 ,  G01P15/125 ,  G01P2015/0814

摘要： A sensor has a support substrate (200), an electrode (110, 510, 710) movable relative to a surface (201) of the support substrate (200) and comprised of a first material, a structure (160, 460, 560, 760) over a portion of the electrode (110, 510, 710) to limit mobility of the electrode (110, 510, 710) and comprised of a second material different from the first material, and bonding pads (170, 470) outside a perimeter of the electrode (110, 510, 710) and comprised of the second material.

摘要翻译： 传感器具有支撑衬底（200），可相对于支撑衬底（200）的表面（201）移动并且由第一材料，结构（160,460,560， 760）覆盖所述电极（110,510,710）的一部分以限制所述电极（110,510,710）的移动性，并且包括不同于所述第一材料的第二材料，以及在所述电极 电极（110,510,710）的周边并且由第二材料构成。

公开(公告)号：US06707351B2

公开(公告)日：2004-03-16

申请号：US10107697

申请日：2002-03-27

申请人： Jonathan F. Gorrell

发明人： Jonathan F. Gorrell

IPC分类号： H03H946

CPC分类号： H03H3/0077

摘要： MEMS resonators (100, 400, 500) include a source of material that is capable of sublimation (128, 130, 406, 408, 502, 504). Conductive pathways (132, 134, 402, 404, 502, 504) to the material are used to supply current of ohmically heat the material in order to cause the material to sublimate. The material may be located either on or in close proximity to a resonant member (114) of the resonator. By sublimating the material, the mass of the resonant member is either increased or decreased thereby altering the resonant frequency of the resonant member. The resonant member is preferably located in a recess that is capped by a cap (202) forming a vacuum enclosure, and the material capable of sublimation preferably comprises a material that serves to getter any residual gases in the vacuum enclosure.

摘要翻译： MEMS谐振器（100,400,500）包括能够升华的材料源（128,130,406,408,502,504）。 用于材料的导电路径（132,134,402,404,502,504）用于提供材料的欧姆加热电流，以使材料升华。 材料可以位于谐振器的谐振构件（114）上或紧邻谐振器的谐振构件（114）。 通过使材料升华，共振构件的质量增加或减少，从而改变谐振构件的谐振频率。 共振构件优选地位于由形成真空外壳的盖（202）盖住的凹部中，并且能够升华的材料优选地包括用于吸入真空外壳中的任何残留气体的材料。