公开(公告)号：US20140287592A1

公开(公告)日：2014-09-25

申请号：US14189367

申请日：2014-02-25

申请人： Sukjin CHUNG ,  JongCheol LEE ,  Younsoo KIM ,  Chayoung YOO ,  Geunkyu CHOI

发明人： Sukjin CHUNG ,  JongCheol LEE ,  Younsoo KIM ,  Chayoung YOO ,  Geunkyu CHOI

IPC分类号： H01L21/02

CPC分类号： H01L21/02219 ,  C23C16/45529 ,  H01L21/02159 ,  H01L21/022 ,  H01L21/0228

摘要： According to example embodiments, a method of forming a layer includes: forming a dielectric layer using a metal precursor expressed by one of R3yM(NR1R2)x-y and M(OR1R2) and using a silicon precursor expressed by HzSi(NR4R5)4-z. Each of “R1”, “R2”, “R3”, “R4”, and “R5” are hydrogen or hydrocarbon; “R3” is different than “R1” and “R2”; “x” is in the range of 3 to 5; “y” is in the range of 1 to 4; “z” is in the range of 2 to 3; and “M” is a metal. The dielectric layer is a metal silicate layer or a metal nitride layer doped with silicon.

摘要翻译： 根据示例性实施例，形成层的方法包括：使用由R yy（NR 1 R 2）x-y和M（OR 1 R 2）之一表示的金属前体形成介电层，并使用由HzSi（NR4R5）4-z表示的硅前体。 “R1”，“R2”，“R3”，“R4”和“R5”分别为氢或烃; “R3”不同于“R1”和“R2”; “x”在3至5的范围内; “y”在1到4的范围内; “z”在2至3的范围内; “M”是金属。 电介质层是掺杂有硅的金属硅酸盐层或金属氮化物层。

公开(公告)号：US09082611B2

公开(公告)日：2015-07-14

申请号：US14189367

申请日：2014-02-25

申请人： Sukjin Chung ,  JongCheol Lee ,  Younsoo Kim ,  Chayoung Yoo ,  Geunkyu Choi

发明人： Sukjin Chung ,  JongCheol Lee ,  Younsoo Kim ,  Chayoung Yoo ,  Geunkyu Choi

IPC分类号： H01L21/02

CPC分类号： H01L21/02219 ,  C23C16/45529 ,  H01L21/02159 ,  H01L21/022 ,  H01L21/0228

摘要： According to example embodiments, a method of forming a layer includes: forming a dielectric layer using a metal precursor expressed by one of R3yM(NR1R2)x-y and M(OR1R2) and using a silicon precursor expressed by HzSi(NR4R5)4-z. Each of “R1”, “R2”, “R3”, “R4”, and “R5” are hydrogen or hydrocarbon; “R3” is different than “R1” and “R2”; “x” is in the range of 3 to 5; “y” is in the range of 1 to 4; “z” is in the range of 2 to 3; and “M” is a metal. The dielectric layer is a metal silicate layer or a metal nitride layer doped with silicon.

摘要翻译： 根据示例性实施例，形成层的方法包括：使用由R yy（NR 1 R 2）x-y和M（OR 1 R 2）之一表示的金属前体形成介电层，并使用由HzSi（NR4R5）4-z表示的硅前体。 “R1”，“R2”，“R3”，“R4”和“R5”分别为氢或烃; “R3”不同于“R1”和“R2”; “x”在3至5的范围内; “y”在1到4的范围内; “z”在2至3的范围内; “M”是金属。 电介质层是掺杂有硅的金属硅酸盐层或金属氮化物层。

公开(公告)号：US20100227479A1

公开(公告)日：2010-09-09

申请号：US12660793

申请日：2010-03-04

申请人： Sunjung Kim ,  JongCheol Lee ,  Bonyoung Koo ,  Wansik Hwang ,  Joon Gon Lee ,  JungHyeon Kim

发明人： Sunjung Kim ,  JongCheol Lee ,  Bonyoung Koo ,  Wansik Hwang ,  Joon Gon Lee ,  JungHyeon Kim

IPC分类号： H01L21/3105

CPC分类号： H01L21/3143 ,  H01L21/02175 ,  H01L21/022 ,  H01L29/40114 ,  H01L29/40117 ,  H01L29/42332 ,  H01L29/513 ,  H01L29/788 ,  H01L29/792

摘要： Provided are a semiconductor device and a method of fabricating the same. The method includes forming a metal nitride layer and a metal oxide layer on a semiconductor substrate to be in contact with each other, and annealing the substrate including the metal nitride layer and the metal oxide layer to form a metal oxynitride layer.

摘要翻译： 提供半导体器件及其制造方法。 该方法包括在半导体衬底上形成金属氮化物层和金属氧化物层以彼此接触，并且使包括金属氮化物层和金属氧化物层的衬底退火以形成金属氧氮化物层。