公开(公告)号：US20130062719A1

公开(公告)日：2013-03-14

申请号：US13614730

申请日：2012-09-13

Applicant: Pil-Kyu KANG ,  Joong-Han SHIN ,  Byung-Lyul PARK ,  Gil-Heyun CHOI

Inventor： Pil-Kyu KANG ,  Joong-Han SHIN ,  Byung-Lyul PARK ,  Gil-Heyun CHOI

IPC: H01L31/0232

CPC classification number: G02B6/4206 ,  G02B6/12004 ,  G02B6/42 ,  G02B6/4201 ,  G02B6/4204 ,  H01L31/0232

Abstract: An optical input/output (I/O) device is provided. The device includes a substrate including an upper trench; a waveguide disposed within the upper trench of the substrate; a photodetector disposed within the upper trench of the substrate and comprising a first end surface optically connected to an end surface of the waveguide; and a light-transmitting insulating layer interposed between the end surface of the waveguide and the first end surface of the photodetector.

Abstract translation: 提供光输入/输出（I / O）设备。 该装置包括：包括上沟槽的衬底; 布置在所述衬底的上沟槽内的波导; 光电检测器，设置在所述衬底的上沟槽内，并且包括光学连接到所述波导的端面的第一端面; 以及插入在波导的端面与光检测器的第一端面之间的透光绝缘层。

公开(公告)号：US20160056171A1

公开(公告)日：2016-02-25

申请号：US14804338

申请日：2015-07-21

Applicant: Wanit MANOROTKUL ,  Joong-han SHIN ,  Bong-jin KUH ,  Han-mei CHOI ,  Dmitry MIKULIK

Inventor： Wanit MANOROTKUL ,  Joong-han SHIN ,  Bong-jin KUH ,  Han-mei CHOI ,  Dmitry MIKULIK

IPC: H01L27/115

CPC classification number: H01L27/11575 ,  H01L21/02532 ,  H01L21/02592 ,  H01L21/02675 ,  H01L21/32055 ,  H01L23/528 ,  H01L27/11519 ,  H01L27/11526 ,  H01L27/11548 ,  H01L27/11556 ,  H01L27/11565 ,  H01L27/11573 ,  H01L27/11582

Abstract: An IC device includes a polycrystalline silicon thin film interposed between a first level semiconductor circuit and a second level semiconductor circuit which are formed on a substrate and disposed to vertically overlap each other. The polycrystalline silicon thin film includes at least one silicon single crystal. The at least one silicon single crystal includes a flat horizontal portion, which provides an active region of the second level semiconductor device, and a pin-shaped protruding portion protruding from the flat horizontal portion toward the first level semiconductor device.

Abstract translation: IC器件包括插入在第一级半导体电路和第二级半导体电路之间的多晶硅薄膜，其形成在基板上并且彼此垂直重叠。 多晶硅薄膜包括至少一个硅单晶。 所述至少一个硅单晶包括提供所述第二电平半导体器件的有源区的平坦水平部分和从所述平坦水平部分向所述第一电平半导体器件突出的销状突出部分。

公开(公告)号：US08901694B2

公开(公告)日：2014-12-02

申请号：US13614730

申请日：2012-09-13

Applicant: Pil-Kyu Kang ,  Joong-Han Shin ,  Byung-Lyul Park ,  Gil-Heyun Choi

Inventor： Pil-Kyu Kang ,  Joong-Han Shin ,  Byung-Lyul Park ,  Gil-Heyun Choi

IPC: H01L31/0232 ,  H01L27/14 ,  H01L31/00 ,  G02B6/00 ,  G02B6/12 ,  G02B6/42

CPC classification number: G02B6/4206 ,  G02B6/12004 ,  G02B6/42 ,  G02B6/4201 ,  G02B6/4204 ,  H01L31/0232

Abstract: An optical input/output (I/O) device is provided. The device includes a substrate including an upper trench; a waveguide disposed within the upper trench of the substrate; a photodetector disposed within the upper trench of the substrate and comprising a first end surface optically connected to an end surface of the waveguide; and a light-transmitting insulating layer interposed between the end surface of the waveguide and the first end surface of the photodetector.

Abstract translation: 提供光输入/输出（I / O）设备。 该装置包括：包括上沟槽的衬底; 布置在所述衬底的上沟槽内的波导; 光电检测器，设置在所述衬底的上沟槽内，并且包括光学连接到所述波导的端面的第一端面; 以及插入在波导的端面与光检测器的第一端面之间的透光绝缘层。