ION IMPLANTATION APPARATUS
    1.
    发明申请
    ION IMPLANTATION APPARATUS 失效
    离子植入装置

    公开(公告)号:US20110073781A1

    公开(公告)日:2011-03-31

    申请号:US12894229

    申请日:2010-09-30

    Abstract: An ion implanter has an implant wheel with a plurality of wafer carriers distributed about a periphery of the wheel. Each wafer carrier has a heat sink for removing heat from a wafer on the carrier during the implant process by thermal contact between the wafer and the heat sink. The wafer carriers have wafer retaining fences formed as cylindrical rollers with axes in the respective wafer support planes of the wafer carriers. The cylindrical surfaces of the rollers provide wafer abutment surfaces which can move transversely to the wafer support surfaces so that no transverse loading is applied by the fences to wafer edges as the wafer is pushed against the heat sink by centrifugal force. The wafer support surfaces comprise layers of elastomeric material and the movable abutment surfaces of the fences allow even thermal coupling with the heat sink over the whole area of the wafer.

    Abstract translation: 离子注入机具有植入轮,其具有围绕轮的周边分布的多个晶片载体。 每个晶片载体具有散热器,用于在植入过程期间通过晶片和散热器之间的热接触从载体上的晶片去除热量。 晶片载体具有晶片保持栅栏,其形成为具有在晶片载体的相应晶片支撑平面中的轴线的圆柱形辊。 辊的圆柱形表面提供可以横向移动到晶片支撑表面的晶片邻接表面,使得当晶片通过离心力推靠在散热片上时,栅栏不会向晶片边缘施加横向负载。 晶片支撑表面包括弹性体材料层,并且栅栏的可移动邻接表面允许在晶片的整个区域上均匀地与散热器的热耦合。

    ION IMPLANTATION APPARATUS
    2.
    发明申请
    ION IMPLANTATION APPARATUS 有权
    离子植入装置

    公开(公告)号:US20110073779A1

    公开(公告)日:2011-03-31

    申请号:US12568923

    申请日:2009-09-29

    CPC classification number: H01J37/3171 H01J37/20 H01J2237/2001

    Abstract: An ion implanter has an implant wheel with a plurality of wafer carriers distributed about a periphery of the wheel. Each wafer carrier has a heat sink for removing heat from a wafer on the carrier during the implant process by thermal contact between the wafer and the heat sink. A respective wafer lift structure on each carrier is moveable between first and second positions, with the wafer supported spaced away from the heat sink and in thermal contact with the heat sink respectively. The lift structure is operated to move between the first and second positions wheel the implant is rotating. This allows control of wafer temperature during the implant process by adjusting the thermal contact between wafers and heat sinks.

    Abstract translation: 离子注入机具有植入轮,其具有围绕轮的周边分布的多个晶片载体。 每个晶片载体具有散热器,用于在植入过程期间通过晶片和散热器之间的热接触从载体上的晶片去除热量。 每个载体上的相应的晶片提升结构可在第一和第二位置之间移动,晶片分别与散热器间隔开并与散热片热接触。 电梯结构被操作以在植入物旋转的第一和第二位置轮之间移动。 这允许通过调整晶片和散热器之间的热接触来控制植入过程中的晶片温度。

    Ion implantation apparatus
    3.
    发明授权
    Ion implantation apparatus 失效
    离子注入装置

    公开(公告)号:US08426829B2

    公开(公告)日:2013-04-23

    申请号:US12894229

    申请日:2010-09-30

    Abstract: An ion implanter has an implant wheel with a plurality of wafer carriers distributed about a periphery of the wheel. Each wafer carrier has a heat sink for removing heat from a wafer on the carrier during the implant process by thermal contact between the wafer and the heat sink. The wafer carriers have wafer retaining fences formed as cylindrical rollers with axes in the respective wafer support planes of the wafer carriers. The cylindrical surfaces of the rollers provide wafer abutment surfaces which can move transversely to the wafer support surfaces so that no transverse loading is applied by the fences to wafer edges as the wafer is pushed against the heat sink by centrifugal force. The wafer support surfaces comprise layers of elastomeric material and the movable abutment surfaces of the fences allow even thermal coupling with the heat sink over the whole area of the wafer.

    Abstract translation: 离子注入机具有植入轮,其具有围绕轮的周边分布的多个晶片载体。 每个晶片载体具有散热器,用于在植入过程期间通过晶片和散热器之间的热接触从载体上的晶片去除热量。 晶片载体具有晶片保持栅栏,其形成为具有在晶片载体的相应晶片支撑平面中的轴线的圆柱形辊。 辊的圆柱形表面提供可以横向移动到晶片支撑表面的晶片邻接表面,使得当晶片通过离心力推靠在散热片上时,栅栏不会向晶片边缘施加横向负载。 晶片支撑表面包括弹性体材料层,并且栅栏的可移动邻接表面允许在晶片的整个区域上与散热器的均匀热耦合。

    GAS BEARING ELECTROSTATIC CHUCK
    4.
    发明申请
    GAS BEARING ELECTROSTATIC CHUCK 有权
    气体轴承静电卡盘

    公开(公告)号:US20090273878A1

    公开(公告)日:2009-11-05

    申请号:US12113091

    申请日:2008-04-30

    CPC classification number: H01L21/6831

    Abstract: An electrostatic clamp is provided having a clamping plate, wherein the clamping plate has a central region and an annulus region. A plurality of gas supply orifices are defined in the central region of the clamping plate, wherein the plurality of gas supply orifices are in fluid communication with a pressurized gas supply, and wherein the pressurized gas supply is configured to provide a cushion of gas between the clamping surface and the workpiece in the central region of the clamping plate via the plurality of gas supply orifices. One or more gas return orifices defined in one or more of the central region and annulus region of the clamping plate, wherein the one or more gas return orifices are in fluid communication with a vacuum source, therein generally defining an exhaust path for the cushion of gas. A seal is disposed in the annulus region of the clamping plate, wherein the seal is configured to generally prevent a leakage of the cushion of gas from the central region to an environment external to the annulus region. One or more electrodes are further electrically connected to a first voltage potential to provide a first clamping force.

    Abstract translation: 提供具有夹板的静电夹具,其中夹持板具有中心区域和环形区域。 多个气体供给孔限定在夹紧板的中心区域中,其中多个气体供应孔与加压气体源流体连通,并且其中,加压气体供应构造成在气体供应孔之间提供气垫 通过多个气体供应孔在夹紧板的中心区域中夹持表面和工件。 限定在夹板的一个或多个中心区域和环形区域中的一个或多个气体返回孔,其中一个或多个气体返回孔与真空源流体连通,其中通常限定用于衬垫的衬垫的排气路径 加油站。 密封件设置在夹紧板的环空区域中,其中密封件构造成大体上防止气垫从中心区域泄漏到环形区域外部的环境。 一个或多个电极进一步电连接到第一电压电位以提供第一夹紧力。

    Gas bearing electrostatic chuck
    5.
    发明授权
    Gas bearing electrostatic chuck 有权
    气体轴承静电吸盘

    公开(公告)号:US09036326B2

    公开(公告)日:2015-05-19

    申请号:US12113091

    申请日:2008-04-30

    CPC classification number: H01L21/6831

    Abstract: An electrostatic clamp is provided having a clamping plate, wherein the clamping plate has a central region and an annulus region. A plurality of gas supply orifices are defined in the central region of the clamping plate, wherein the plurality of gas supply orifices are in fluid communication with a pressurized gas supply, and wherein the pressurized gas supply is configured to provide a cushion of gas between the clamping surface and the workpiece in the central region of the clamping plate via the plurality of gas supply orifices. One or more gas return orifices defined in one or more of the central region and annulus region of the clamping plate, wherein the one or more gas return orifices are in fluid communication with a vacuum source, therein generally defining an exhaust path for the cushion of gas. A seal is disposed in the annulus region of the clamping plate, wherein the seal is configured to generally prevent a leakage of the cushion of gas from the central region to an environment external to the annulus region. One or more electrodes are further electrically connected to a first voltage potential to provide a first clamping force.

    Abstract translation: 提供具有夹板的静电夹具,其中夹持板具有中心区域和环形区域。 多个气体供给孔限定在夹紧板的中心区域中,其中多个气体供应孔与加压气体源流体连通,并且其中加压气体供应构造成在气体供应孔之间提供气垫 通过多个气体供应孔在夹紧板的中心区域中夹持表面和工件。 限定在夹板的一个或多个中心区域和环形区域中的一个或多个气体返回孔,其中一个或多个气体返回孔与真空源流体连通,其中通常限定用于衬垫的衬垫的排气路径 加油站。 密封件设置在夹紧板的环空区域中,其中密封件构造成大体上防止气垫从中心区域泄漏到环形区域外部的环境。 一个或多个电极进一步电连接到第一电压电位以提供第一夹紧力。

    Ion implantation apparatus
    6.
    发明授权
    Ion implantation apparatus 有权
    离子注入装置

    公开(公告)号:US08324599B2

    公开(公告)日:2012-12-04

    申请号:US12568923

    申请日:2009-09-29

    CPC classification number: H01J37/3171 H01J37/20 H01J2237/2001

    Abstract: An ion implanter has an implant wheel with a plurality of wafer carriers distributed about a periphery of the wheel. Each wafer carrier has a heat sink for removing heat from a wafer on the carrier during the implant process by thermal contact between the wafer and the heat sink. A respective wafer lift structure on each carrier is moveable between first and second positions, with the wafer supported spaced away from the heat sink and in thermal contact with the heat sink respectively. The lift structure is operated to move between the first and second positions wheel the implant is rotating. This allows control of wafer temperature during the implant process by adjusting the thermal contact between wafers and heat sinks.

    Abstract translation: 离子注入机具有植入轮,其具有围绕轮的周边分布的多个晶片载体。 每个晶片载体具有散热器,用于在植入过程期间通过晶片和散热器之间的热接触从载体上的晶片去除热量。 每个载体上的相应的晶片提升结构可在第一和第二位置之间移动,晶片分别与散热器间隔开并与散热片热接触。 电梯结构被操作以在植入物旋转的第一和第二位置轮之间移动。 这允许通过调整晶片和散热器之间的热接触来控制植入过程中的晶片温度。

    Ion implantation apparatus and a method for fluid cooling
    7.
    发明授权
    Ion implantation apparatus and a method for fluid cooling 有权
    离子注入装置和流体冷却方法

    公开(公告)号:US07982197B2

    公开(公告)日:2011-07-19

    申请号:US12494268

    申请日:2009-06-30

    CPC classification number: H01J37/3171 H01J37/20 H01J2237/184 H01J2237/2001

    Abstract: A hydrogen ion implanter for the exfoliation of silicon from silicon wafers uses a large scan wheel carrying 50+ wafers around its periphery and rotating about an axis. In one embodiment, the axis of rotation of the wheel is fixed and the wheel is formed with tensioned spokes supporting a rim carrying the wafer supports. The spokes may be used for carrying cooling fluid to and from the wafer supports. Detachable connections in the cooling fluid conduits in the vacuum chamber may comprise tandem seals with an intermediate chamber between them which can be vented outside the vacuum chamber, or independently vacuum pumped. In one embodiment, a ribbon beam of hydrogen ions is directed down on a peripheral edge of the wheel. The ribbon beam extends over the full radial width of wafers on the wheel.

    Abstract translation: 用于从硅晶片剥离硅的氢离子注入机使用大的扫描轮,围绕其周边承载50个以上的晶圆并围绕一个轴线旋转。 在一个实施例中,车轮的旋转轴线是固定的,并且车轮形成有支撑承载晶片支架的轮辋的张紧轮辐。 轮辐可以用于将冷却流体携带到晶片支撑件和从晶片支撑件传送冷却流体。 真空室中的冷却流体管道中的可分离连接可以包括串联密封件,其间具有中间室,其可以在真空室外排气,或独立地抽真空。 在一个实施例中,氢离子的带状光束被向下指向轮的外围边缘。 带状束在轮上的晶片的整个径向宽度上延伸。

    ION IMPLANTATION APPARATUS AND A METHOD FOR FLUID COOLING
    8.
    发明申请
    ION IMPLANTATION APPARATUS AND A METHOD FOR FLUID COOLING 有权
    离子植入装置和流体冷却方法

    公开(公告)号:US20100327189A1

    公开(公告)日:2010-12-30

    申请号:US12494268

    申请日:2009-06-30

    CPC classification number: H01J37/3171 H01J37/20 H01J2237/184 H01J2237/2001

    Abstract: A hydrogen ion implanter for the exfoliation of silicon from silicon wafers uses a large scan wheel carrying 50+ wafers around its periphery and rotating about an axis. In one embodiment, the axis of rotation of the wheel is fixed and the wheel is formed with tensioned spokes supporting a rim carrying the wafer supports. The spokes may be used for carrying cooling fluid to and from the wafer supports. Detachable connections in the cooling fluid conduits in the vacuum chamber may comprise tandem seals with an intermediate chamber between them which can be vented outside the vacuum chamber, or independently vacuum pumped. In one embodiment, a ribbon beam of hydrogen ions is directed down on a peripheral edge of the wheel. The ribbon beam extends over the full radial width of wafers on the wheel.

    Abstract translation: 用于从硅晶片剥离硅的氢离子注入机使用大的扫描轮,围绕其周边承载50个以上的晶圆并围绕一个轴线旋转。 在一个实施例中,车轮的旋转轴线是固定的,并且车轮形成有支撑承载晶片支架的轮辋的张紧轮辐。 轮辐可以用于将冷却流体携带到晶片支撑件和从晶片支撑件传送冷却流体。 真空室中的冷却流体管道中的可分离连接可以包括串联密封件,其间具有中间室,其可以在真空室外排气,或独立地抽真空。 在一个实施例中,氢离子的带状光束被向下指向轮的外围边缘。 带状束在轮上的晶片的整个径向宽度上延伸。

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