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公开(公告)号：US07982197B2
公开(公告)日：2011-07-19
申请号：US12494268
申请日：2009-06-30
IPC分类号： H01J37/317 , H01J37/20
CPC分类号： H01J37/3171 , H01J37/20 , H01J2237/184 , H01J2237/2001
摘要： A hydrogen ion implanter for the exfoliation of silicon from silicon wafers uses a large scan wheel carrying 50+ wafers around its periphery and rotating about an axis. In one embodiment, the axis of rotation of the wheel is fixed and the wheel is formed with tensioned spokes supporting a rim carrying the wafer supports. The spokes may be used for carrying cooling fluid to and from the wafer supports. Detachable connections in the cooling fluid conduits in the vacuum chamber may comprise tandem seals with an intermediate chamber between them which can be vented outside the vacuum chamber, or independently vacuum pumped. In one embodiment, a ribbon beam of hydrogen ions is directed down on a peripheral edge of the wheel. The ribbon beam extends over the full radial width of wafers on the wheel.
摘要翻译： 用于从硅晶片剥离硅的氢离子注入机使用大的扫描轮，围绕其周边承载50个以上的晶圆并围绕一个轴线旋转。 在一个实施例中，车轮的旋转轴线是固定的，并且车轮形成有支撑承载晶片支架的轮辋的张紧轮辐。 轮辐可以用于将冷却流体携带到晶片支撑件和从晶片支撑件传送冷却流体。 真空室中的冷却流体管道中的可分离连接可以包括串联密封件，其间具有中间室，其可以在真空室外排气，或独立地抽真空。 在一个实施例中，氢离子的带状光束被向下指向轮的外围边缘。 带状束在轮上的晶片的整个径向宽度上延伸。
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公开(公告)号：US20100327189A1
公开(公告)日：2010-12-30
申请号：US12494268
申请日：2009-06-30
IPC分类号： H01J37/317 , H01J37/20 , H01J37/08 , H01J37/02
CPC分类号： H01J37/3171 , H01J37/20 , H01J2237/184 , H01J2237/2001
摘要： A hydrogen ion implanter for the exfoliation of silicon from silicon wafers uses a large scan wheel carrying 50+ wafers around its periphery and rotating about an axis. In one embodiment, the axis of rotation of the wheel is fixed and the wheel is formed with tensioned spokes supporting a rim carrying the wafer supports. The spokes may be used for carrying cooling fluid to and from the wafer supports. Detachable connections in the cooling fluid conduits in the vacuum chamber may comprise tandem seals with an intermediate chamber between them which can be vented outside the vacuum chamber, or independently vacuum pumped. In one embodiment, a ribbon beam of hydrogen ions is directed down on a peripheral edge of the wheel. The ribbon beam extends over the full radial width of wafers on the wheel.
摘要翻译： 用于从硅晶片剥离硅的氢离子注入机使用大的扫描轮，围绕其周边承载50个以上的晶圆并围绕一个轴线旋转。 在一个实施例中，车轮的旋转轴线是固定的，并且车轮形成有支撑承载晶片支架的轮辋的张紧轮辐。 轮辐可以用于将冷却流体携带到晶片支撑件和从晶片支撑件传送冷却流体。 真空室中的冷却流体管道中的可分离连接可以包括串联密封件，其间具有中间室，其可以在真空室外排气，或独立地抽真空。 在一个实施例中，氢离子的带状光束被向下指向轮的外围边缘。 带状束在轮上的晶片的整个径向宽度上延伸。
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公开(公告)号：US07989784B2
公开(公告)日：2011-08-02
申请号：US12494270
申请日：2009-06-30
IPC分类号： H01J37/317 , H01J37/20
CPC分类号： H01J37/3171 , H01J37/05 , H01J37/08 , H01J37/20 , H01J2237/057 , H01J2237/061 , H01J2237/082 , H01J2237/166 , H01J2237/2001 , H01J2237/2006 , H01J2237/201 , H01J2237/202
摘要： A hydrogen ion implanter for the exfoliation of silicon from silicon wafers uses a large scan wheel carrying 50+ wafers around its periphery and rotating about an axis. In one embodiment, the axis of rotation of the wheel is fixed and a ribbon beam of hydrogen ions is directed down on a peripheral edge of the wheel. The ribbon beam extends over the full radial width of wafers on the wheel. The beam is generated by an ion source providing an extracted ribbon beam having at least 100 mm major cross-sectional diameter. The ribbon beam may be passed through a 90° bending magnet which bends the beam in the plane of the ribbon. The magnet provides intensity correction across the ribbon to compensate for the dependency on the radial distance from the wheel axis of the speed at which parts of the wafers pass through the ribbon beam.
摘要翻译： 用于从硅晶片剥离硅的氢离子注入机使用大的扫描轮，围绕其周边承载50个以上的晶圆并围绕一个轴线旋转。 在一个实施例中，车轮的旋转轴线是固定的，并且带状的氢离子束被向下指向车轮的周缘。 带状束在轮上的晶片的整个径向宽度上延伸。 光束由离子源产生，提供具有至少100mm主横截面直径的抽出的带状束。 带状光束可以穿过将光束弯曲在色带平面中的90°弯曲磁体。 磁体在色带上提供强度校正，以补偿从轮轴的径向距离对晶片的一部分通过带状束的速度的依赖性。
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公开(公告)号：US08044374B2
公开(公告)日：2011-10-25
申请号：US12494269
申请日：2009-06-30
申请人： Geoffrey Ryding , Theodore H. Smick , Kenneth Harry Purser , Hilton Glavish , Joeph Daniel Gillespie
发明人： Geoffrey Ryding , Theodore H. Smick , Kenneth Harry Purser , Hilton Glavish , Joeph Daniel Gillespie
IPC分类号： H01J37/317
CPC分类号： H01J37/20 , H01J37/05 , H01J37/08 , H01J37/3171 , H01J2237/057 , H01J2237/061 , H01J2237/082 , H01J2237/166 , H01J2237/2001 , H01J2237/2005 , H01J2237/201 , H01J2237/202
摘要： A hydrogen ion implanter for the exfoliation of silicon from silicon wafers uses a large scan wheel carrying 50+ wafers around its periphery and rotating about an axis. In one embodiment, the axis of rotation of the wheel is fixed and the wheel is formed with tensioned spokes supporting a rim carrying the wafer supports. The spokes may be used for carrying cooling fluid to and from the wafer supports. In one embodiment, a ribbon beam of hydrogen ions is directed down on a peripheral edge of the wheel. The ribbon beam extends over the full radial width of wafers on the wheel.
摘要翻译： 用于从硅晶片剥离硅的氢离子注入机使用大的扫描轮，围绕其周边承载50个以上的晶圆并围绕一个轴线旋转。 在一个实施例中，车轮的旋转轴线是固定的，并且车轮形成有支撑承载晶片支架的轮辋的张紧轮辐。 轮辐可以用于将冷却流体携带到晶片支撑件和从晶片支撑件传送冷却流体。 在一个实施例中，氢离子的带状光束被向下指向轮的外围边缘。 带状束在轮上的晶片的整个径向宽度上延伸。
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公开(公告)号：US20100327181A1
公开(公告)日：2010-12-30
申请号：US12494269
申请日：2009-06-30
申请人： Geoffrey Ryding , Theodore H. Smick , Kenneth Harry Purser , Hilton Glavish , Joeph Daniel Gillespie
发明人： Geoffrey Ryding , Theodore H. Smick , Kenneth Harry Purser , Hilton Glavish , Joeph Daniel Gillespie
CPC分类号： H01J37/20 , H01J37/05 , H01J37/08 , H01J37/3171 , H01J2237/057 , H01J2237/061 , H01J2237/082 , H01J2237/166 , H01J2237/2001 , H01J2237/2005 , H01J2237/201 , H01J2237/202
摘要： A hydrogen ion implanter for the exfoliation of silicon from silicon wafers uses a large scan wheel carrying 50+ wafers around its periphery and rotating about an axis. In one embodiment, the axis of rotation of the wheel is fixed and the wheel is formed with tensioned spokes supporting a rim carrying the wafer supports. The spokes may be used for carrying cooling fluid to and from the wafer supports. In one embodiment, a ribbon beam of hydrogen ions is directed down on a peripheral edge of the wheel. The ribbon beam extends over the full radial width of wafers on the wheel.
摘要翻译： 用于从硅晶片剥离硅的氢离子注入机使用大的扫描轮，围绕其周边承载50个以上的晶圆并围绕一个轴线旋转。 在一个实施例中，车轮的旋转轴线是固定的，并且车轮形成有支撑承载晶片支架的轮辋的张紧轮辐。 轮辐可以用于将冷却流体携带到晶片支撑件和从晶片支撑件传送冷却流体。 在一个实施例中，氢离子的带状光束被向下指向轮的外围边缘。 带状束在轮上的晶片的整个径向宽度上延伸。
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公开(公告)号：US20100327190A1
公开(公告)日：2010-12-30
申请号：US12494270
申请日：2009-06-30
IPC分类号： H01J37/08
CPC分类号： H01J37/3171 , H01J37/05 , H01J37/08 , H01J37/20 , H01J2237/057 , H01J2237/061 , H01J2237/082 , H01J2237/166 , H01J2237/2001 , H01J2237/2006 , H01J2237/201 , H01J2237/202
摘要： A hydrogen ion implanter for the exfoliation of silicon from silicon wafers uses a large scan wheel carrying 50+ wafers around its periphery and rotating about an axis. In one embodiment, the axis of rotation of the wheel is fixed and a ribbon beam of hydrogen ions is directed down on a peripheral edge of the wheel. The ribbon beam extends over the full radial width of wafers on the wheel. The beam is generated by an ion source providing an extracted ribbon beam having at least 100 mm major cross-sectional diameter. The ribbon beam may be passed through a 90° bending magnet which bends the beam in the plane of the ribbon. The magnet provides intensity correction across the ribbon to compensate for the dependency on the radial distance from the wheel axis of the speed at which parts of the wafers pass through the ribbon beam.
摘要翻译： 用于从硅晶片剥离硅的氢离子注入机使用大的扫描轮，围绕其周边承载50个以上的晶圆并围绕一个轴线旋转。 在一个实施例中，车轮的旋转轴线是固定的，并且带状的氢离子束被向下指向车轮的周缘。 带状束在轮上的晶片的整个径向宽度上延伸。 光束由离子源产生，提供具有至少100mm主横截面直径的抽出的带状束。 带状光束可以穿过将光束弯曲在色带平面中的90°弯曲磁体。 磁体在色带上提供强度校正，以补偿与轮轴的径向距离对晶圆部分通过带状束的速度的依赖性。
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公开(公告)号：US08426829B2
公开(公告)日：2013-04-23
申请号：US12894229
申请日：2010-09-30
申请人： William H Leavitt , Theodore H Smick , Joseph Daniel Gillespie , William H Park , Paul Eide , Drew Arnold , Geoffrey Ryding
发明人： William H Leavitt , Theodore H Smick , Joseph Daniel Gillespie , William H Park , Paul Eide , Drew Arnold , Geoffrey Ryding
IPC分类号： H01J37/317
CPC分类号： H01J37/20 , H01J37/3171 , H01J2237/2001 , H01J2237/2007 , H01J2237/201
摘要： An ion implanter has an implant wheel with a plurality of wafer carriers distributed about a periphery of the wheel. Each wafer carrier has a heat sink for removing heat from a wafer on the carrier during the implant process by thermal contact between the wafer and the heat sink. The wafer carriers have wafer retaining fences formed as cylindrical rollers with axes in the respective wafer support planes of the wafer carriers. The cylindrical surfaces of the rollers provide wafer abutment surfaces which can move transversely to the wafer support surfaces so that no transverse loading is applied by the fences to wafer edges as the wafer is pushed against the heat sink by centrifugal force. The wafer support surfaces comprise layers of elastomeric material and the movable abutment surfaces of the fences allow even thermal coupling with the heat sink over the whole area of the wafer.
摘要翻译： 离子注入机具有植入轮，其具有围绕轮的周边分布的多个晶片载体。 每个晶片载体具有散热器，用于在植入过程期间通过晶片和散热器之间的热接触从载体上的晶片去除热量。 晶片载体具有晶片保持栅栏，其形成为具有在晶片载体的相应晶片支撑平面中的轴线的圆柱形辊。 辊的圆柱形表面提供可以横向移动到晶片支撑表面的晶片邻接表面，使得当晶片通过离心力推靠在散热片上时，栅栏不会向晶片边缘施加横向负载。 晶片支撑表面包括弹性体材料层，并且栅栏的可移动邻接表面允许在晶片的整个区域上与散热器的均匀热耦合。
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公开(公告)号：US20110073781A1
公开(公告)日：2011-03-31
申请号：US12894229
申请日：2010-09-30
申请人： William H. Leavitt , Theodore H. Smick , Joseph Daniel Gillespie , William H. Park , Paul Eide , Drew Arnold , Geoffrey Ryding
发明人： William H. Leavitt , Theodore H. Smick , Joseph Daniel Gillespie , William H. Park , Paul Eide , Drew Arnold , Geoffrey Ryding
IPC分类号： H01L21/265
CPC分类号： H01J37/20 , H01J37/3171 , H01J2237/2001 , H01J2237/2007 , H01J2237/201
摘要： An ion implanter has an implant wheel with a plurality of wafer carriers distributed about a periphery of the wheel. Each wafer carrier has a heat sink for removing heat from a wafer on the carrier during the implant process by thermal contact between the wafer and the heat sink. The wafer carriers have wafer retaining fences formed as cylindrical rollers with axes in the respective wafer support planes of the wafer carriers. The cylindrical surfaces of the rollers provide wafer abutment surfaces which can move transversely to the wafer support surfaces so that no transverse loading is applied by the fences to wafer edges as the wafer is pushed against the heat sink by centrifugal force. The wafer support surfaces comprise layers of elastomeric material and the movable abutment surfaces of the fences allow even thermal coupling with the heat sink over the whole area of the wafer.
摘要翻译： 离子注入机具有植入轮，其具有围绕轮的周边分布的多个晶片载体。 每个晶片载体具有散热器，用于在植入过程期间通过晶片和散热器之间的热接触从载体上的晶片去除热量。 晶片载体具有晶片保持栅栏，其形成为具有在晶片载体的相应晶片支撑平面中的轴线的圆柱形辊。 辊的圆柱形表面提供可以横向移动到晶片支撑表面的晶片邻接表面，使得当晶片通过离心力推靠在散热片上时，栅栏不会向晶片边缘施加横向负载。 晶片支撑表面包括弹性体材料层，并且栅栏的可移动邻接表面允许在晶片的整个区域上均匀地与散热器的热耦合。
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9.发明授权D.C. charged particle accelerator and a method of accelerating charged particles 有权D.C.带电粒子促进剂和加速带电粒子的方法公开(公告)号：US08723452B2
公开(公告)日：2014-05-13
申请号：US13186513
申请日：2011-07-20
IPC分类号： H05H7/22
CPC分类号： H05H5/04
摘要： A d. c. charged particle accelerator comprises accelerator electrodes separated by insulating spacers defining acceleration gaps between adjacent pairs of electrodes. Individually regulated gap voltages are applied across each adjacent pair of accelerator electrodes. In an embodiment, direct connections are provided to gap electrodes from the stage points of a multistage Cockcroft Walton type voltage multiplier circuit. The described embodiment enables an ion beam to be accelerated to high energies and high beam currents, with good accelerator stability.
摘要翻译： 广告。 C。 带电粒子加速器包括通过绝缘垫片间隔开的加速器电极，其限定相邻电极对之间的加速间 单独调节的间隙电压施加在每个相邻的加速器电极对之间。 在一个实施例中，从多级Cockcroft Walton型电压倍增器电路的级点向间隙电极提供直接连接。 所描述的实施例使得能够将离子束加速到高能量和高束流，具有良好的加速器稳定性。
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10.发明授权Ion source assembly for ion implantation apparatus and a method of generating ions therein 有权用于离子注入装置的离子源组件及其中产生离子的方法公开(公告)号：US07939812B2
公开(公告)日：2011-05-10
申请号：US12494272
申请日：2009-06-30
IPC分类号： H01J37/317 , H01J37/08 , H01J27/02 , H01J1/50
CPC分类号： H01J37/3171 , H01J37/08 , H01J2237/083
摘要： A hydrogen ion implanter for the exfoliation of silicon from silicon wafers uses a large scan wheel carrying 50+ wafers around its periphery and rotating about an axis. In one embodiment, the axis of rotation of the wheel is fixed and a ribbon beam of hydrogen ions is directed down on a peripheral edge of the wheel. The ribbon beam extends over the full radial width of wafers on the wheel. The beam is generated by an ion source providing an extracted ribbon beam having at least 100 mm major cross-sectional diameter. The ion source may use core-less saddle type coils to provide a uniform field confining the plasma in the ion source. The ribbon beam may be passed through a 90° bending magnet which bends the beam in the plane of the ribbon.
摘要翻译： 用于从硅晶片剥离硅的氢离子注入机使用大的扫描轮，围绕其周边承载50个以上的晶圆并围绕一个轴线旋转。 在一个实施例中，车轮的旋转轴线是固定的，并且带状的氢离子束被向下指向车轮的周缘。 带状束在轮上的晶片的整个径向宽度上延伸。 光束由离子源产生，提供具有至少100mm主横截面直径的抽出的带状束。 离子源可以使用无芯鞍型线圈来提供限制离子源中的等离子体的均匀场。 带状光束可以穿过将光束弯曲在色带平面中的90°弯曲磁体。
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