利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

11 条记录 (耗时 0.025 秒)

    Method and apparatus for removing metallic nanotubes without transferring carbon nanotubes from one substrate to another substrate
    8.
    发明授权
    Method and apparatus for removing metallic nanotubes without transferring carbon nanotubes from one substrate to another substrate 有权
    用于去除金属纳米管而不将碳纳米管从一个基底转移到另一个基底的方法和装置

    公开(公告)号：US08836033B1

    公开(公告)日：2014-09-16

    申请号：US13357796

    申请日：2012-01-25

    申请人： Silai Krishnaswamy ,  Joseph Payne ,  Jeffrey Hartman

    发明人： Silai Krishnaswamy ,  Joseph Payne ,  Jeffrey Hartman

    IPC分类号： G02B5/30

    CPC分类号： B82Y30/00 ,  B82Y40/00

    摘要： Embodiments of a method and apparatus for removing metallic nanotubes without transferring CNTs from one substrate to another substrate provide two methods of transferring a thin layer of crystalline ST-cut quartz wafer to the surface of a carrier silicon wafer for subsequent CNT growth, without resorting to CNT transfer. In other words, embodiments of a method and apparatus allow CNTs to be grown on the same substrate that metallic nanotube removal is performed, therefore eliminating the costly and messy step of transferring CNTs from one substrate to another. This is achieved through a residual thin layer of crystalline ST-cut quartz layer on a silicon wafer. The ST-cut quartz wafer promotes aligned growth of CNTs, while the underlying silicon wafer allows backgate burnout.

    摘要翻译： 用于去除金属纳米管而不将CNT从一个衬底转移到另一个衬底的方法和设备的实施例提供了将晶体ST切割石英晶片的薄层转移到载体硅晶片的表面以用于随后的CNT生长的两种方法，而不诉诸于 CNT转移。 换句话说，方法和装置的实施例允许CNT在相同的衬底上生长金属纳米管去除，因此消除了将碳纳米管从一个衬底转移到另一个衬底的昂贵和混乱的步骤。 这通过在硅晶片上的晶体ST切割石英层的残留薄层来实现。 ST切割的石英晶片促进CNT的对准生长，而下面的硅晶片允许背栅板烧尽。