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    INHIBITORS OF HISTONE DEACETYLASE FOR THE TREATMENT OF DISEASE
    3.
    发明申请
    INHIBITORS OF HISTONE DEACETYLASE FOR THE TREATMENT OF DISEASE 审中-公开
    用于治疗疾病的组织脱乙酰酶的抑制剂

    公开(公告)号：US20070135438A1

    公开(公告)日：2007-06-14

    申请号：US11608736

    申请日：2006-12-08

    申请人： Joseph Payne ,  Nicholas Smith ,  Shawn Scranton ,  Christian Hassig

    发明人： Joseph Payne ,  Nicholas Smith ,  Shawn Scranton ,  Christian Hassig

    IPC分类号： A61K31/53 ,  A61K31/4965 ,  C07D253/08 ,  A61K31/505

    CPC分类号： C07D213/76 ,  C07D405/12

    摘要： Disclosed herein are carbonyl compounds of having the structural formula: or a pharmaceutically acceptable salt, ester, or prodrug thereof, Methods and compositions are disclosed for treating disease states including, but not limited to cancers, autoimmune diseases, tissue damage, central nervous system disorders, neurodegenerative disorders, fibrosis, bone disorders, polyglutamine-repeat disorders, anemias, thalassemias, inflammatory conditions, cardiovascular conditions, and disorders in which angiogenesis play a role in pathogenesis, using the compounds of the invention. In addition, methods of modulating the activity of histone deacetylase (HDAC) are also disclosed.

    摘要翻译： 本文公开了具有以下结构式的羰基化合物：或其药学上可接受的盐，酯或前药。公开了用于治疗疾病状态的方法和组合物，包括但不限于癌症，自身免疫疾病，组织损伤，中枢神经系统疾病 使用本发明的化合物，神经变性疾病，纤维化，骨病，聚谷氨酰胺重复病症，贫血，地热病，炎性病症，心血管病症和血管生成在发病机理中发挥作用的病症。 此外，还公开了调节组蛋白脱乙酰酶（HDAC）的活性的方法。

    Method and apparatus for removing metallic nanotubes without transferring carbon nanotubes from one substrate to another substrate
    8.
    发明授权
    Method and apparatus for removing metallic nanotubes without transferring carbon nanotubes from one substrate to another substrate 有权
    用于去除金属纳米管而不将碳纳米管从一个基底转移到另一个基底的方法和装置

    公开(公告)号：US08836033B1

    公开(公告)日：2014-09-16

    申请号：US13357796

    申请日：2012-01-25

    申请人： Silai Krishnaswamy ,  Joseph Payne ,  Jeffrey Hartman

    发明人： Silai Krishnaswamy ,  Joseph Payne ,  Jeffrey Hartman

    IPC分类号： G02B5/30

    CPC分类号： B82Y30/00 ,  B82Y40/00

    摘要： Embodiments of a method and apparatus for removing metallic nanotubes without transferring CNTs from one substrate to another substrate provide two methods of transferring a thin layer of crystalline ST-cut quartz wafer to the surface of a carrier silicon wafer for subsequent CNT growth, without resorting to CNT transfer. In other words, embodiments of a method and apparatus allow CNTs to be grown on the same substrate that metallic nanotube removal is performed, therefore eliminating the costly and messy step of transferring CNTs from one substrate to another. This is achieved through a residual thin layer of crystalline ST-cut quartz layer on a silicon wafer. The ST-cut quartz wafer promotes aligned growth of CNTs, while the underlying silicon wafer allows backgate burnout.

    摘要翻译： 用于去除金属纳米管而不将CNT从一个衬底转移到另一个衬底的方法和设备的实施例提供了将晶体ST切割石英晶片的薄层转移到载体硅晶片的表面以用于随后的CNT生长的两种方法，而不诉诸于 CNT转移。 换句话说，方法和装置的实施例允许CNT在相同的衬底上生长金属纳米管去除，因此消除了将碳纳米管从一个衬底转移到另一个衬底的昂贵和混乱的步骤。 这通过在硅晶片上的晶体ST切割石英层的残留薄层来实现。 ST切割的石英晶片促进CNT的对准生长，而下面的硅晶片允许背栅板烧尽。