公开(公告)号：US06720261B1

公开(公告)日：2004-04-13

申请号：US09586586

申请日：2000-06-02

申请人： Steven Mark Anderson ,  Siddhartha Bhowmik ,  Joseph William Buckfeller ,  Sailesh Mansinh Merchant ,  Frank Minardi

发明人： Steven Mark Anderson ,  Siddhartha Bhowmik ,  Joseph William Buckfeller ,  Sailesh Mansinh Merchant ,  Frank Minardi

IPC分类号： H01L2144

CPC分类号： H01L21/76843 ,  Y02P80/30

摘要： A system and method for eliminating interconnect extrusions in vias that are formed during ionized metal plasma processing. By eliminating interconnect extrusions in vias, reliability failures and yield loss are decreased. The extrusions of interconnect metallization occur while wafers are subject to elevated temperatures that cause the internal stresses in the interconnect metallization to transit from a substantially tensile mode to a substantially compressive mode. By controlling the interconnect temperature to be below the temperature at which the interconnect transits from a tensile to a compressive mode, interconnect extrusions in vias are eliminated. The interconnect temperature is controlled by using an actively cooled pedestal in combination with a low temperature IMP deposition process. In addition, the IMP processing time may also be decreased to limit heating of the interconnect.

公开(公告)号：US07137400B2

公开(公告)日：2006-11-21

申请号：US10675569

申请日：2003-09-30

申请人： William Daniel Bevers ,  Robert Francis Jones ,  Bennett J. Ross ,  Joseph William Buckfeller ,  James L. Flack

发明人： William Daniel Bevers ,  Robert Francis Jones ,  Bennett J. Ross ,  Joseph William Buckfeller ,  James L. Flack

IPC分类号： G01F25/00 ,  G05D7/06

CPC分类号： G05D7/0658 ,  G01F25/003 ,  Y10T137/0318 ,  Y10T137/7759 ,  Y10T137/7761

摘要： Described herein are apparatuses, methods and systems to monitor the performance of one or more mass flow controllers that supply gases to deposition, etching, and other manufacturing processes. A bypass loop is provided in fluid connection from either the process line or the vent line. In the bypass loop is a flow detector, such as a digitized mass flow controller. The flow detector takes one or more measurements of flow of gas from a mass flow controller, and data from such one or more measurements is used to provide information about the accuracy and/or precision of the mass flow controller. Also disclosed are ways to correct for back pressure or back vacuum in the process line.

摘要翻译： 这里描述了监测向沉积，蚀刻和其它制造工艺供应气体的一个或多个质量流量控制器的性能的装置，方法和系统。 旁路回路以流体连接方式从过程管线或排气管线提供。 在旁路回路中是流量检测器，例如数字化质量流量控制器。 流量检测器从质量流量控制器进行一次或多次气体流量测量，并且使用来自这样的一个或多个测量的数据来提供关于质量流量控制器的精度和/或精度的信息。 还公开了在过程管线中校正背压或反真空的方法。

公开(公告)号：US6136159A

公开(公告)日：2000-10-24

申请号：US276086

申请日：1998-11-06

申请人： Joseph William Buckfeller ,  Sailesh Chittipeddi ,  Sailesh Mansinh Merchant

发明人： Joseph William Buckfeller ,  Sailesh Chittipeddi ,  Sailesh Mansinh Merchant

IPC分类号： C23C14/34 ,  C23C14/50 ,  C23C14/54 ,  C23C16/12 ,  C23C16/46 ,  C23C16/50 ,  H01L21/28 ,  H01L21/285 ,  H01L21/3205 ,  H01L21/768

CPC分类号： H01L21/2855 ,  C23C14/50 ,  C23C14/541 ,  H01L21/76877

摘要： A method of depositing aluminum or other metals so that vias are more completely filled is disclosed. The wafer or substrate is preheated to a temperature of approximately 200.degree. C. Then the wafer is placed in an ambient of approximately 350.degree. C. while metal deposition commences. The resulting metal layer has a gradually increasing grain size and exhibits improved via filling. Also disclosed is a method and apparatus (involving cooling of support structures) for deposition of an antireflective coating to prevent rainbowing or spiking of the coating into the underlying metal.

摘要翻译： 公开了一种沉积铝或其它金属使得通孔更完全填充的方法。 将晶片或衬底预热至约200℃的温度。然后将晶片置于约350℃的环境中，同时开始金属沉积。 所得到的金属层具有逐渐增加的晶粒尺寸并表现出改进的通孔填充。 还公开了一种用于沉积抗反射涂层的方法和装置（包括冷却支撑结构），以防止涂层向底层金属中起彩虹或尖峰。

公开(公告)号：US5935396A

公开(公告)日：1999-08-10

申请号：US843125

申请日：1997-04-25

申请人： Joseph William Buckfeller ,  Sailesh Chittipeddi ,  Sailesh Mansinh Merchant

发明人： Joseph William Buckfeller ,  Sailesh Chittipeddi ,  Sailesh Mansinh Merchant

IPC分类号： C23C14/34 ,  C23C14/50 ,  C23C14/54 ,  C23C16/12 ,  C23C16/46 ,  C23C16/50 ,  H01L21/28 ,  H01L21/285 ,  H01L21/3205 ,  H01L21/768

CPC分类号： H01L21/2855 ,  C23C14/50 ,  C23C14/541 ,  H01L21/76877

摘要： A method of depositing aluminum or other metals so that vias are more completely filled is disclosed. The wafer or substrate is preheated to a temperature of approximately 200.degree. C. Then the wafer is placed in an ambient of approximately 350.degree. C. while metal deposition commences. The resulting metal layer has a gradually increasing grain size and exhibits improved via filling. Also disclosed is a method and apparatus (involving cooling of support structures) for deposition of an anti-reflective coating to prevent rainbowing or spiking of the coating into the underlying metal.

摘要翻译： 公开了一种沉积铝或其它金属使得通孔更完全填充的方法。 将晶片或衬底预热至约200℃的温度。然后将晶片置于约350℃的环境中，同时开始金属沉积。 所得到的金属层具有逐渐增加的晶粒尺寸并表现出改进的通孔填充。 还公开了一种方法和装置（包括冷却支撑结构），用于沉积防反射涂层，以防止涂层向底层金属中起彩虹或尖峰。

公开(公告)号：US06169036A

公开(公告)日：2001-01-02

申请号：US09276034

申请日：1999-03-25

申请人： Siddhartha Bhowmik ,  Joseph William Buckfeller ,  G. Craig Clabough ,  Sailesh Mansinh Merchant

发明人： Siddhartha Bhowmik ,  Joseph William Buckfeller ,  G. Craig Clabough ,  Sailesh Mansinh Merchant

IPC分类号： H01L2100

CPC分类号： H01L21/02063 ,  H01L21/32136 ,  H01L21/76804 ,  H01L21/76805 ,  H01L21/76814 ,  H01L21/76838

摘要： A method is for cleaning via openings during manufacturing of integrated circuits. The method preferably comprises the steps of sputter cleaning the via opening at least once, and exposing the via opening to a reducing atmosphere at least once. The method may include alternatingly repeating the sputter cleaning and exposing steps. The step of sputter cleaning is preferably performed prior to the step of exposing, and a sputter cleaning may be performed after a last step of exposing the via opening to the reducing atmosphere. In one embodiment, the exposed metal portion comprises a metal compound, such as an oxide. Accordingly, the step of sputter cleaning removes at least a portion of the metal oxide, and the step of exposing comprises reducing at least a portion of the metal oxide. The invention is particularly applicable when the metal interconnection layer is a copper, as copper readily oxides at its exposed surface.

摘要翻译： 一种用于在集成电路制造期间通孔的清洁方法。 该方法优选地包括以下步骤：将通孔开口至少一次溅射清洗，并将通孔开至少一次暴露于还原气氛。 该方法可以包括交替重复溅射清洗和曝光步骤。 溅射清洗的步骤优选在曝光步骤之前进行，并且可以在将通孔打开至还原气氛的最后步骤之后进行溅射清洗。 在一个实施方案中，暴露的金属部分包括金属化合物，例如氧化物。 因此，溅射清洗的步骤除去至少一部分金属氧化物，并且曝光步骤包括还原金属氧化物的至少一部分。 当金属互连层是铜时，本发明特别适用，因为铜在其暴露的表面容易氧化。

公开(公告)号：US5807760A

公开(公告)日：1998-09-15

申请号：US706932

申请日：1996-09-03

申请人： Joseph William Buckfeller ,  Sailesh Chittipeddi ,  Sailesh Mansinh Merchant

发明人： Joseph William Buckfeller ,  Sailesh Chittipeddi ,  Sailesh Mansinh Merchant

IPC分类号： C23C14/34 ,  C23C14/50 ,  C23C14/54 ,  C23C16/12 ,  C23C16/46 ,  C23C16/50 ,  H01L21/28 ,  H01L21/285 ,  H01L21/3205 ,  H01L21/768 ,  H01L21/283

CPC分类号： H01L21/2855 ,  C23C14/50 ,  C23C14/541 ,  H01L21/76877

摘要： A method of depositing aluminum or other metals so that vias are more completely filled is disclosed. The wafer or substrate is preheated to a temperature of approximately 200.degree. C. Then the wafer is placed in an ambient of approximately 350.degree. C. while metal deposition commences. The resulting metal layer has a gradually increasing grain size and exhibits improved via filling. Also disclosed is a method and apparatus (involving cooling of support structures) for deposition of an anti-reflective coating to prevent rainbowing or spiking of the coating into the underlying metal.

摘要翻译： 公开了一种沉积铝或其它金属使得通孔更完全填充的方法。 将晶片或衬底预热至约200℃的温度。然后将晶片置于约350℃的环境中，同时开始金属沉积。 所得到的金属层具有逐渐增加的晶粒尺寸并表现出改进的通孔填充。 还公开了一种方法和装置（包括冷却支撑结构），用于沉积防反射涂层，以防止涂层向底层金属中起彩虹或尖峰。