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30 条记录 (耗时 0.014 秒)

    Protective coating for print head feed slots
    1.
    发明授权
    Protective coating for print head feed slots 有权
    打印头进纸槽的保护涂层

    公开(公告)号：US08585180B2

    公开(公告)日：2013-11-19

    申请号：US13389709

    申请日：2009-10-28

    申请人： Siddhartha Bhowmik ,  Rio Rivas ,  Gerald R. Wonnacott

    发明人： Siddhartha Bhowmik ,  Rio Rivas ,  Gerald R. Wonnacott

    IPC分类号： B41J2/135

    CPC分类号： B41J2/135 ,  B41J2/1404 ,  B41J2/1603 ,  B41J2/1623 ,  B41J2/1628 ,  B41J2/1629 ,  B41J2/1631 ,  B41J2/1646 ,  B41J2/17563

    摘要： A method of method of making a corrosion resistant print head die comprises creating a self-ionized plasma (SIP) of a coating material; establishing a bias on a print head die comprising a plurality of feed slots (40), each feed slot (40) comprising side wall surfaces (61); and causing the coating material plasma to be deposited on the surfaces to form a protective coating, wherein at least a portion of the coating material is deposited on at least a portion of the surfaces by resputtering. In some cases, the feed slots have an aspect ratio greater than 2. In some cases, the feed slot comprises at least one rib (41), each rib (41) comprising a top surface (68), two side surfaces (66), and an under surface (69), and the formed protective coating is deposited on the top surface (68), two side surfaces (66), and under surface (69) of each rib (41).

    摘要翻译： 一种制造耐腐蚀印刷头模头的方法包括制造涂覆材料的自离子等离子体（SIP）; 在包括多个进料槽（40）的打印头模头上建立偏压，每个进料槽（40）包括侧壁表面（61）; 并且使涂层材料等离子体沉积在表面上以形成保护涂层，其中至少一部分涂层材料通过再溅射沉积在表面的至少一部分上。 在一些情况下，进料槽包括至少一个肋（41），每个肋（41）包括顶表面（68），两个侧表面（66） 和下表面（69），并且形成的保护涂层沉积在每个肋（41）的顶表面（68），两个侧表面（66）和下表面（69）处。

    Method of forming metal oxide metal capacitors using multi-step rapid thermal process and a device formed thereby
    6.
    发明授权
    Method of forming metal oxide metal capacitors using multi-step rapid thermal process and a device formed thereby 有权
    使用多步快速热处理形成金属氧化物金属电容器的方法和由此形成的器件

    公开(公告)号：US06323078B1

    公开(公告)日：2001-11-27

    申请号：US09418106

    申请日：1999-10-14

    申请人： Siddhartha Bhowmik ,  Sailesh M. Merchant ,  Pradip K. Roy ,  Sidhartha Sen

    发明人： Siddhartha Bhowmik ,  Sailesh M. Merchant ,  Pradip K. Roy ,  Sidhartha Sen

    IPC分类号： H01L218234

    CPC分类号： H01L28/40

    摘要： The present invention provides a method of forming a metal oxide metal (MOM) capacitor on a substrate, such as a silicon substrate, of a semiconductor wafer in a rapid thermal process (RTP) machine. The MOM capacitor is fabricated by forming a metal layer on the semiconductor substrate. The metal layer is then subjected to a first rapid thermal process in a substantially inert but nitrogen-free atmosphere that consumes a portion of the metal layer to form a first metal electrode layer and a silicide layer between the first metal electrode and the semiconductor substrate. The semiconductor wafer is then subjected to a second rapid thermal process. During this process, the remaining portion of the metal layer is oxidized to form a metal oxide on the first metal electrode, which serves as the dielectric layer of the MOM capacitor. Following the formation of the dielectric layer, a second metal electrode layer is then conventionally formed on the metal oxide, which completes the formation of the MOM capacitor. Preferably, the first electrode layer and the metal oxide layer are formed in a single RTP machine.

    摘要翻译： 本发明提供了一种在快速热处理（RTP）机器中在半导体晶片的衬底（例如硅衬底）上形成金属氧化物金属（MOM）电容器的方法。 通过在半导体衬底上形成金属层来制造MOM电容器。 然后在基本惰性但无氮的气氛中对金属层进行第一快速热处理，其消耗金属层的一部分以在第一金属电极和半导体衬底之间形成第一金属电极层和硅化物层。 然后对半导体晶片进行第二快速热处理。 在该过程中，金属层的剩余部分被氧化，在作为MOM电容器的电介质层的第一金属电极上形成金属氧化物。 在形成电介质层之后，通常在金属氧化物上形成第二金属电极层，从而完成MOM电容器的形成。 优选地，第一电极层和金属氧化物层在单个RTP机器中形成。

    Method of coil preparation for ionized metal plasma process and method of manufacturing integrated circuits
    10.
    发明授权
    Method of coil preparation for ionized metal plasma process and method of manufacturing integrated circuits 有权
    电离金属等离子体工艺制备线圈的方法及集成电路制造方法

    公开(公告)号：US06699372B2

    公开(公告)日：2004-03-02

    申请号：US09836365

    申请日：2001-04-16

    申请人： Siddhartha Bhowmik ,  Sailesh M. Merchant ,  Frank Minardi

    发明人： Siddhartha Bhowmik ,  Sailesh M. Merchant ,  Frank Minardi

    IPC分类号： C23C1434

    CPC分类号： H01J37/321 ,  C23C14/32 ,  C23C14/3471 ,  C23C14/564

    摘要： The present invention provides a method of depositing a film on a surface of a coil that includes depositing a metal from a target onto a surface of a coil to form a first film on the surface and forming a second film over the first film at a low pressure and at a first power at the target that is substantially higher than a first power at the component's surface. The conditioned deposition tool is well suited for manufacturing integrated circuits.

    摘要翻译： 本发明提供了一种在线圈表面上沉积薄膜的方法，该方法包括将金属从靶材沉积到线圈的表面上以在表面上形成第一薄膜，并在低温下在第一薄膜上形成第二薄膜 并且在目标处的第一功率基本上高于组件表面处的第一功率。 调理沉积工具非常适合制造集成电路。