公开(公告)号：US06699760B2

公开(公告)日：2004-03-02

申请号：US10179806

申请日：2002-06-25

申请人： Julia Wan-Ping Hsu ,  Michael James Manfra ,  Nils Guenter Weimann

发明人： Julia Wan-Ping Hsu ,  Michael James Manfra ,  Nils Guenter Weimann

IPC分类号： H01L21336

CPC分类号： C30B29/40 ,  H01L21/02178 ,  H01L21/02241 ,  H01L21/02258 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02631 ,  H01L21/31679 ,  H01L29/2003 ,  H01L29/7371 ,  H01L29/7786 ,  H01L29/78

摘要： One method includes epitaxially growing a layer of group III-nitride semiconductor under growth conditions that cause a growth surface to be rough. The method also includes performing an epitaxial growth of a second layer of group III-nitride semiconductor on the first layer under growth conditions that cause the growth surface to become smooth. The two-step growth produces a lower density of threading defects. Another method includes epitaxially growing a layer of group III-nitride semiconductor on a lattice-mismatched crystalline substrate and then, chemically treating a growth surface of the layer to selectively electrically passivate defects that thread the layer.

摘要翻译： 一种方法包括在使生长表面粗糙的生长条件下外延生长III族氮化物半导体层。 该方法还包括在使生长表面变得光滑的生长条件下，在第一层上执行第III族氮化物半导体的第二层的外延生长。 两步生长产生较低密度的穿线缺陷。另一种方法包括在晶格失配的晶体衬底上外延生长III族氮化物半导体层，然后化学处理该层的生长表面以选择性地电钝化缺陷， 螺纹层。

公开(公告)号：US07229847B2

公开(公告)日：2007-06-12

申请号：US10307642

申请日：2002-12-02

申请人： Julia Wan-Ping Hsu ,  Yueh-Lin Loo ,  John A. Rogers

发明人： Julia Wan-Ping Hsu ,  Yueh-Lin Loo ,  John A. Rogers

IPC分类号： H01L51/40 ,  H01L21/00 ,  H01L21/84

CPC分类号： H01L51/0595 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002 ,  H01L21/2007 ,  H01L21/76251 ,  H01L27/283 ,  H01L51/0001 ,  H01L51/0004 ,  H01L51/0013 ,  H01L51/0021 ,  H01L51/0024 ,  H01L51/0036 ,  H01L51/0052 ,  H01L51/0053 ,  H01L51/0078 ,  H01L51/0512 ,  H01L51/0516 ,  H01L51/0541 ,  H01L51/0545 ,  H01L51/105

摘要： The present invention provides a process for forming electrical contacts to a molecular layer in a nanoscale device, the nanoscale device, and a method of manufacturing an integrated circuit comprise such devices. The process includes coating a surface of a stamp with a metal layer and forming an attached layer of anchored molecules by coupling first ends of the anchored molecules to a conductive or semiconductive substrate. The process also includes placing the metal layer in contact with the attached layer of anchored molecules such that the metal layer chemically bonds to free ends of the anchored molecules. The resulting devices produced have superior reliability as compared to conventional prepared devices.

摘要翻译： 本发明提供了一种用于在纳米级器件中形成与分子层的电接触的方法，纳米级器件，以及制造集成电路的方法包括这样的器件。 该方法包括用金属层涂覆印模的表面并通过将锚定分子的第一端耦合到导电或半导电基底而形成附着的锚定分子层。 该方法还包括使金属层与附着的锚定分子层接触，使得金属层化学键合到锚定分子的自由端。 所制造的装置与传统的制备装置相比具有优异的可靠性。