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    Aqueous acidic etching solution and method for texturing the surface of single crystal and polycrystal silicon substrates
    2.
    发明授权
    Aqueous acidic etching solution and method for texturing the surface of single crystal and polycrystal silicon substrates 有权
    酸性酸性蚀刻溶液和用于纹理化单晶和多晶硅衬底表面的方法

    公开(公告)号：US08969276B2

    公开(公告)日：2015-03-03

    申请号：US13394349

    申请日：2010-09-09

    申请人： Simon Braun ,  Julian Proelss ,  Ihor Melnyk ,  Michael Michel ,  Stefan Mathijssen

    发明人： Simon Braun ,  Julian Proelss ,  Ihor Melnyk ,  Michael Michel ,  Stefan Mathijssen

    IPC分类号： H01L31/0236 ,  C09K13/08 ,  C11D11/00

    CPC分类号： C09K13/08 ,  C11D11/0047 ,  H01L31/02363 ,  Y02E10/50

    摘要： An aqueous acidic etching solution suitable for texturing the surface of single crystal and polycrystal silicon substrates and containing, based on the complete weight of the solution, 3 to 10% by weight of hydrofluoric acid; 10 to 35% by weight of nitric acid; 5 to 40% by weight of sulfuric acid; and 55 to 82% by weight of water; a method for texturing the surface of single crystal and polycrystal silicon substrates comprising the step of (1) contacting at least one major surface of a substrate with the said aqueous acidic etching solution; (2) etching the at least one major surface of the substrate for a time and at a temperature sufficient to obtain a surface texture consisting of recesses and protrusions; and (3) removing the at least one major surface of the substrate from the contact with the aqueous acidic etching solution; and a method for manufacturing photovoltaic cells and solar cells using the said solution and the said texturing method.

    摘要翻译： 一种适用于对单晶和多晶硅衬底的表面进行纹理化的含水酸性蚀刻溶液，并且基于溶液的完全重量含有3至10重量％的氢氟酸; 10至35重量％的硝酸; 5至40重量％的硫酸; 和55〜82重量％的水; 一种用于纹理化单晶和多晶硅衬底的表面的方法，包括以下步骤：（1）使基底的至少一个主表面与所述酸性酸性蚀刻溶液接触; （2）蚀刻所述基板的所述至少一个主表面一段时间并且足以获得由凹陷和突起组成的表面纹理的温度; 和（3）将所述基材的至少一个主表面与所述酸性蚀刻溶液接触; 以及使用所述溶液和所述纹理化方法制造光伏电池和太阳能电池的方法。

    AQUEOUS ACIDIC ETCHING SOLUTION AND METHOD FOR TEXTURING THE SURFACE OF SINGLE CRYSTAL AND POLYCRYSTAL SILICON SUBSTRATES
    3.
    发明申请
    AQUEOUS ACIDIC ETCHING SOLUTION AND METHOD FOR TEXTURING THE SURFACE OF SINGLE CRYSTAL AND POLYCRYSTAL SILICON SUBSTRATES 有权
    水性酸蚀刻溶液和单晶和多晶硅基材表面的方法

    公开(公告)号：US20120160320A1

    公开(公告)日：2012-06-28

    申请号：US13394349

    申请日：2010-09-09

    申请人： Simon Braun ,  Julian Proelss ,  Ihor Melnyk ,  Michael Michel ,  Stefan Mathijssen

    发明人： Simon Braun ,  Julian Proelss ,  Ihor Melnyk ,  Michael Michel ,  Stefan Mathijssen

    IPC分类号： H01L31/0236 ,  H01L21/306 ,  H01L31/18 ,  C09K13/08

    CPC分类号： C09K13/08 ,  C11D11/0047 ,  H01L31/02363 ,  Y02E10/50

    摘要： An aqueous acidic etching solution suitable for texturing the surface of single crystal and polycrystal silicon substrates and containing, based on the complete weight of the solution, 3 to 10% by weight of hydrofluoric acid; 10 to 35% by weight of nitric acid; 5 to 40% by weight of sulfuric acid; and 55 to 82% by weight of water; a method for texturing the surface of single crystal and polycrystal silicon substrates comprising the step of (1) contacting at least one major surface of a substrate with the said aqueous acidic etching solution; (2) etching the at least one major surface of the substrate for a time and at a temperature sufficient to obtain a surface texture consisting of recesses and protrusions; and (3) removing the at least one major surface of the substrate from the contact with the aqueous acidic etching solution; and a method for manufacturing photovoltaic cells and solar cells using the said solution and the said texturing method.

    摘要翻译： 一种适用于对单晶和多晶硅衬底的表面进行纹理化的含水酸性蚀刻溶液，并且基于溶液的完全重量含有3至10重量％的氢氟酸; 10至35重量％的硝酸; 5至40重量％的硫酸; 和55〜82重量％的水; 一种用于纹理化单晶和多晶硅衬底的表面的方法，包括以下步骤：（1）使基底的至少一个主表面与所述酸性酸性蚀刻溶液接触; （2）蚀刻所述基板的所述至少一个主表面一段时间并且足以获得由凹陷和突起组成的表面纹理的温度; 和（3）将所述基材的至少一个主表面与所述酸性蚀刻溶液接触; 以及使用所述溶液和所述纹理化方法制造光伏电池和太阳能电池的方法。