Semiconductor probe with high resolution resistive tip and method of fabricating the same
    1.
    发明授权
    Semiconductor probe with high resolution resistive tip and method of fabricating the same 有权
    具有高分辨率电阻尖端的半导体探针及其制造方法

    公开(公告)号:US07828981B2

    公开(公告)日:2010-11-09

    申请号:US11835874

    申请日:2007-08-08

    IPC分类号: C23F1/00

    CPC分类号: G01Q60/30 G01Q60/38

    摘要: A semiconductor probe with a high-resolution tip and a method of fabricating the same are provided. The semiconductor probe includes: a cantilever doped with a first impurity; a resistive convex portion projecting from an end portion of the cantilever and lightly doped with a second impurity opposite in polarity to the first impurity; and first and second electrode regions formed on either side of the resistive convex portion and heavily doped with the second impurity.

    摘要翻译: 提供了具有高分辨率尖端的半导体探针及其制造方法。 半导体探针包括:掺杂有第一杂质的悬臂; 从所述悬臂的端部突出并轻微掺杂与所述第一杂质极性相反的第二杂质的电阻凸部; 以及第一和第二电极区域,形成在电阻凸部的任一侧上并且重掺杂有第二杂质。

    Ratiometric fluorescent chemosensor for selective detection of Hg (II) ions
    2.
    发明申请
    Ratiometric fluorescent chemosensor for selective detection of Hg (II) ions 有权
    用于选择性检测Hg(II)离子的比例荧光化学传感器

    公开(公告)号:US20080255346A1

    公开(公告)日:2008-10-16

    申请号:US11973522

    申请日:2007-10-09

    摘要: A mercury selective fluorescent chemosensor for detecting mercury ions (Hg2+) by a compound represented by formula 1 is provided. A novel fluorescent sensitive compound prepared by introducing two aminopyrene functions as a fluorescent sensitive moiety into a binding site of the compound represented by the formula 1, is used for selectively detecting mercury ions (Hg2+) is also provided. The mercury selective fluorescent sensitive chemosensor is a switch type chemosensor having ON-OFF-type Hg2+-selective fluorescence quenching behavior and is not affected by other coexistent metal ions. The changes in fluorescence of the compounds represented by formula 1 were analyzed by ratiometric approach using monomer and excimer emissions of the pyrene fluorophore to selectively signal the concentration of mercury ions (Hg2+). The chemosensor can detect mercury ions in a micromolar unit even in a solution including an excess of water. Accordingly, the mercury selective fluorescent chemosensor for detecting mercury ions (Hg2+) can be used effectively in environmental and medical applications.

    摘要翻译: 提供了通过式1表示的化合物检测汞离子(Hg 2+ +)的汞选择性荧光化学传感器。 通过将两个氨基芘作为荧光敏感部分引入到由式1表示的化合物的结合位点而制备的新型荧光敏感化合物也用于选择性地检测汞离子(Hg 2+) 提供。 汞选择性荧光敏感化学传感器是具有ON-OFF型Hg 2+选择性荧光猝灭行为的开关型化学传感器,并且不受其他共存金属离子的影响。 通过使用芘荧光团的单体和准分子发射的比例法分析由式1表示的化合物的荧光的变化,以选择性地发信号通知汞离子的浓度(Hg 2+)。 化学传感器即使在包含过量的水的溶液中也能检测微摩尔单位的汞离子。 因此,用于检测汞离子的汞选择性荧光化学传感器(Hg 2+)可以在环境和医疗应用中有效地使用。

    Methods of fabricating bipolar junction transistors having an increased
safe operating area
    4.
    发明授权
    Methods of fabricating bipolar junction transistors having an increased safe operating area 有权
    制造具有增加的安全操作区域的双极结型晶体管的方法

    公开(公告)号:US6114212A

    公开(公告)日:2000-09-05

    申请号:US152945

    申请日:1998-09-14

    摘要: A bipolar junction transistor includes a semiconductor substrate having a surface, a base region of first conductivity type in the substrate, and an emitter region of second conductivity type extending from the surface into the base region to form a generally concave semiconductor junction having an apex oriented towards the surface. The emitter region preferably includes a plurality of contiguous emitter subregions extending from the surface into the base region in an arcuate manner and merging to form the generally concave semiconductor junction. The transistor preferably includes an emitter terminal electrically contacting the emitter region at an emitter contact area on the surface, the emitter contact area having a central portion substantially centered with respect to the apex of the semiconductor junction. To produce the bipolar junction transistor, a base layer of first conductivity type is provided in a semiconductor substrate, ions of second conductivity type implanted through the base layer surface in portions of the base layer surface increasing in area from a central portion of the base layer surface laterally towards outer portions of the base layer surface, and the implanted ions diffused into the base layer to thereby create the emitter region and the concave semiconductor junction. Preferably, the ions are implanted by depositing an oxide or other masking layer on the base layer, selectively etching the masking layer to expose the plurality of surface portions, and then implanting the ions into the exposed surface portions.

    摘要翻译: 双极结晶体管包括具有表面的半导体衬底,衬底中的第一导电类型的基极区域和从表面延伸到基极区域的第二导电类型的发射极区域,以形成具有顶点取向的大致凹入的半导体结 朝向表面。 发射极区域优选地包括多个连续的发射极子区域,其以弓形方式从表面延伸到基极区域并且合并以形成大体上凹的半导体结。 晶体管优选地包括在表面上的发射极接触区域处电接触发射极区域的发射极端子,发射极接触区域具有基本上相对于半导体结的顶点居中的中心部分。 为了制造双极结型晶体管,在半导体衬底中设置第一导电型的基极层,从基底层表面的基底层表面的部分注入的基底层表面的部分的离子从基底层的中心部分增加的第二导电型离子 表面横向朝向基底层表面的外部部分,并且注入的离子扩散到基底层中,从而产生发射极区域和凹入的半导体结。 优选地,通过在基底层上沉积氧化物或其它掩蔽层来注入离子,选择性地蚀刻掩模层以暴露多个表面部分,然后将离子注入到暴露的表面部分中。

    NOVEL 8-HYDROXYQUINOLINE ACETAMIDE COMPOUND, 8-HYDROXY QUINOLINE THIOAMIDE COMPOUND AND USE THEREOF
    5.
    发明申请
    NOVEL 8-HYDROXYQUINOLINE ACETAMIDE COMPOUND, 8-HYDROXY QUINOLINE THIOAMIDE COMPOUND AND USE THEREOF 有权
    8-羟基喹啉乙酰胺化合物,8-羟基喹啉硫酮化合物及其用途

    公开(公告)号:US20120077275A1

    公开(公告)日:2012-03-29

    申请号:US13244428

    申请日:2011-09-24

    IPC分类号: G01N21/75

    CPC分类号: C07D417/04

    摘要: Disclosed are a novel 8-hydroxyquinoline acetamide compound, an 8-hydroxyquinoline thioamide and use thereof. More specifically, disclosed are a novel 8-hydroxyquinoline thioamide compound suitable for use as a selective chemodosimeter that shows considerably high detection sensitivity to mercury ions, an 8-hydroxyquinoline acetamide compound as an intermediate thereof, preparation thereof, and a chemodosimeter for mercury ion-selective detection, the chemodosimeter comprising the 8-hydroxyquinoline thioamide compound. The compounds as disclosed herein exhibit considerably effective fluorescence specificity of an off-on type, detect a micromole of mercury ions from chemical and biological aqueous systems, and allow 100% desulfurization within 5 minutes, thus being considerably useful in the chemical industry.

    摘要翻译: 公开了一种新的8-羟基喹啉乙酰胺化合物,8-羟基喹啉硫代酰胺及其用途。 更具体地,公开了一种适用于选择性化学计量仪的新型8-羟基喹啉硫代酰胺化合物,其对汞离子显示出相当高的检测灵敏度,作为其中间体的8-羟基喹啉乙酰胺化合物,其制备方法和用于汞离子交换的化学计量计, 选择性检测,化学计量计包含8-羟基喹啉硫代酰胺化合物。 本文公开的化合物表现出相当有效的脱离型荧光特异性,从化学和生物水性体系检测微量汞离子,并允许在5分钟内进行100%脱硫,因此在化学工业中相当有用。

    8-hydroxyquinoline acetamide compound, 8-hydroxy quinoline thioamide compound and use thereof
    9.
    发明授权
    8-hydroxyquinoline acetamide compound, 8-hydroxy quinoline thioamide compound and use thereof 有权
    8-羟基喹啉乙酰胺化合物,8-羟基喹啉硫代酰胺化合物及其用途

    公开(公告)号:US08377698B2

    公开(公告)日:2013-02-19

    申请号:US13244428

    申请日:2011-09-24

    IPC分类号: G01N33/20

    CPC分类号: C07D417/04

    摘要: Disclosed are a novel 8-hydroxyquinoline acetamide compound, an 8-hydroxyquinoline thioamide and use thereof. More specifically, disclosed are a novel 8-hydroxyquinoline thioamide compound suitable for use as a selective chemodosimeter that shows considerably high detection sensitivity to mercury ions, an 8-hydroxyquinoline acetamide compound as an intermediate thereof, preparation thereof, and a chemodosimeter for mercury ion-selective detection, the chemodosimeter comprising the 8-hydroxyquinoline thioamide compound. The compounds as disclosed herein exhibit considerably effective fluorescence specificity of an off-on type, detect a micromole of mercury ions from chemical and biological aqueous systems, and allow 100% desulfurization within 5 minutes, thus being considerably useful in the chemical industry.

    摘要翻译: 公开了一种新的8-羟基喹啉乙酰胺化合物,8-羟基喹啉硫代酰胺及其用途。 更具体地,公开了一种适用于选择性化学计量仪的新型8-羟基喹啉硫代酰胺化合物,其对汞离子显示出相当高的检测灵敏度,作为其中间体的8-羟基喹啉乙酰胺化合物,其制备方法和用于汞离子的化学计量计, 选择性检测,化学计量计包含8-羟基喹啉硫代酰胺化合物。 本文公开的化合物表现出相当有效的脱离型荧光特异性,从化学和生物水性体系检测微量汞离子,并允许在5分钟内进行100%脱硫,因此在化学工业中相当有用。

    SEMICONDUCTOR PROBE HAVING EMBOSSED RESISTIVE TIP AND METHOD OF FABRICATING THE SAME
    10.
    发明申请
    SEMICONDUCTOR PROBE HAVING EMBOSSED RESISTIVE TIP AND METHOD OF FABRICATING THE SAME 有权
    具有可塑性电阻提示的半导体探针及其制造方法

    公开(公告)号:US20080094089A1

    公开(公告)日:2008-04-24

    申请号:US11772441

    申请日:2007-07-02

    IPC分类号: G01R1/067 H01L21/00

    CPC分类号: G01Q60/30

    摘要: A semiconductor probe having an embossed resistive tip and a method of fabricating the semiconductor probe are provided. The semiconductor probe includes a protrusion portion protruded to a predetermined height on a cantilever in a first direction crossing a length direction of the cantilever, an embossed resistive tip formed on the protrusion portion, and first and second semiconductor electrode regions formed at opposite sides of the embossed resistive tip at the protrusion portion, wherein the cantilever is doped with a first dopant, the first and second semiconductor electrode regions and the embossed resistive tip are doped with a second dopant having a different polarity from the first dopant, and the embossed resistive tip is doped with a concentration lower than the first and second semiconductor electrode regions

    摘要翻译: 提供具有压花电阻端头的半导体探针和制造半导体探针的方法。 半导体探针包括突起部,该突起部在与悬臂的长度方向交叉的第一方向上在悬臂上突出规定的高度,形成在突出部上的压电电阻端子以及形成在突起部的相反侧的第一和第二半导体电极区域 在突出部分处的压电电阻尖端,其中所述悬臂掺杂有第一掺杂剂,所述第一和第二半导体电极区域和所述压电电阻尖端掺杂有与所述第一掺杂剂具有不同极性的第二掺杂剂,并且所述压花电阻尖端 掺杂浓度低于第一和第二半导体电极区域