公开(公告)号：US06436809B1

公开(公告)日：2002-08-20

申请号：US09645615

申请日：2000-08-25

申请人： Gyu-hwan Kwag ,  Se-jong Ko ,  Kyung-seuk Hwang ,  Jun-ing Gil ,  Sang-o Park ,  Dae-hoon Kim ,  Sang-moon Chon ,  Ho-Kyoon Chung

发明人： Gyu-hwan Kwag ,  Se-jong Ko ,  Kyung-seuk Hwang ,  Jun-ing Gil ,  Sang-o Park ,  Dae-hoon Kim ,  Sang-moon Chon ,  Ho-Kyoon Chung

IPC分类号： H01L214763

CPC分类号： H01L21/7684 ,  C09K13/04 ,  H01L21/3212 ,  Y10S438/981

摘要： A method of manufacturing semiconductor devices is provided for forming a tungsten plug or polysilicon plug and minimizing the step-height of the intermediate insulating layer. An etching composition for this process is also provided as are semiconductor devices manufactured by this process. The method of manufacturing semiconductor devices includes the steps of forming a tungsten film having a certain thickness on an insulating layer and burying contact holes formed in the insulating layer constituting a specific semiconductor structure, and spin-etching the tungsten film using a certain etching composition such that the tungsten film is present only inside the contact holes not existing on the insulating film. The etching composition includes at least one oxidant selected from the group comprising H2O2, O2, IO4−, BrO3, ClO3, S2O8−, KlO3, H5IO6, KOH, and HNO3, at least one enhancer selected from the group comprising HF, NH4OH, H3PO4, H2SO4, and HCl, and a buffer solution formed by mixing them at certain rates.

摘要翻译： 提供一种制造半导体器件的方法，用于形成钨插塞或多晶硅插塞，并使中间绝缘层的阶梯高度最小化。 还提供了用于该工艺的蚀刻组合物，与通过该工艺制造的半导体器件一样。 制造半导体器件的方法包括以下步骤：在绝缘层上形成具有一定厚度的钨膜，并且在构成特定半导体结构的绝缘层中形成的埋入接触孔，并使用一定的蚀刻组合物旋转蚀刻钨膜 钨膜仅存在于不存在于绝缘膜上的接触孔内。 蚀刻组合物包括至少一种选自H 2 O 2，O 2，O 4 - ，BrO 3，ClO 3，S 2-8 - ，KIO 3，H 5 O 6，KOH和HNO 3的氧化剂，至少一种选自HF，NH 4 OH，H 3 PO 4 ，H 2 SO 4和HCl，以及通过以一定速率混合形成的缓冲溶液。

公开(公告)号：US5866305A

公开(公告)日：1999-02-02

申请号：US771774

申请日：1996-12-20

申请人： Sang-moon Chon ,  Boo-sup Lee ,  Sung-il Kim ,  Jun-ing Gil ,  Pil-kwon Jun ,  Me-suk Jun

发明人： Sang-moon Chon ,  Boo-sup Lee ,  Sung-il Kim ,  Jun-ing Gil ,  Pil-kwon Jun ,  Me-suk Jun

IPC分类号： G03F7/38 ,  C11D7/26 ,  C11D7/50 ,  G03F7/16 ,  G03F7/32 ,  G03F7/42 ,  H01L21/027 ,  H01L21/306 ,  G03C5/00

CPC分类号： G03F7/168 ,  G03F7/422

摘要： A thinner composition used in a washing process for manufacturing semiconductor devices includes at least ethyl lactate (EL) and ethyl-3-ethoxy propionate (EEP), and preferably, additionally includes Gamma-butyrolactone. The thinner composition has high volatility and low viscosity as well as a sufficient solubility rate for rinsing photoresist on the wafer when spraying the thinner through nozzles. Photoresist at the edge or backside of a wafer can be effectively removed at a sufficiently rapid rate, so that the yield of the semiconductor devices is enhanced. In addition, any remaining photoresist attached to the surface can be completely removed to enable the reuse of the wafer, with resulting economic benefits.

摘要翻译： 用于制造半导体器件的洗涤方法中使用的更薄的组合物至少包括乳酸乙酯（EL）和3-乙氧基丙酸乙酯（EEP），优选还包括γ-丁内酯。 较薄的组合物具有高挥发性和低粘度，以及当通过喷嘴进行稀释剂时，在晶片上冲洗光致抗蚀剂时具有足够的溶解度。 可以以足够快的速率有效地去除在晶片的边缘或背面的光致抗蚀剂，从而提高半导体器件的产量。 此外，可以完全除去附着在表面上的任何剩余光致抗蚀剂，从而可以重新利用晶片，从而带来经济效益。

公开(公告)号：US6140233A

公开(公告)日：2000-10-31

申请号：US109922

申请日：1998-07-02

申请人： Gyu-hwan Kwag ,  Se-jong Ko ,  Kyung-seuk Hwang ,  Jun-ing Gil ,  Sang-o Park ,  Dae-hoon Kim ,  Sang-moon Chon ,  Ho-Kyoon Chung

发明人： Gyu-hwan Kwag ,  Se-jong Ko ,  Kyung-seuk Hwang ,  Jun-ing Gil ,  Sang-o Park ,  Dae-hoon Kim ,  Sang-moon Chon ,  Ho-Kyoon Chung

IPC分类号： C09K13/04 ,  H01L21/321 ,  H01L21/768 ,  H01L21/44

CPC分类号： H01L21/7684 ,  C09K13/04 ,  H01L21/3212 ,  Y10S438/981

摘要： A method of manufacturing semiconductor devices is provided for forming a tungsten plug or polysilicon plug and minimizing the step-height of the intermediate insulating layer. An etching composition for this process is also provided as are semiconductor devices manufactured by this process. The method of manufacturing semiconductor devices includes the steps of forming a tungsten film having a certain thickness on an insulating layer and burying contact holes formed in the insulating layer constituting a specific semiconductor structure, and spin-etching the tungsten film using a certain etching composition such that the tungsten film is present only inside the contact holes not existing on the insulating film. The etching composition includes at least one oxidant selected from the group comprising H.sub.2 O.sub.2, O.sub.2, IO.sub.4.sup.-, BrO.sub.3, ClO.sub.3, S.sub.2 O.sub.8.sup.-, KlO.sub.3, H.sub.5 IO.sub.6, KOH, and HNO.sub.3, at least one enhancer selected from the group comprising HF, NH.sub.4 OH, H.sub.3 PO.sub.4, H.sub.2 SO.sub.4, and HCl, and a buffer solution formed by mixing them at certain rates.

摘要翻译： 提供一种制造半导体器件的方法，用于形成钨插塞或多晶硅插塞，并使中间绝缘层的阶梯高度最小化。 还提供了用于该工艺的蚀刻组合物，与通过该工艺制造的半导体器件一样。 制造半导体器件的方法包括以下步骤：在绝缘层上形成具有一定厚度的钨膜，并且在构成特定半导体结构的绝缘层中形成的埋入接触孔，并使用一定的蚀刻组合物旋转蚀刻钨膜 钨膜仅存在于不存在于绝缘膜上的接触孔内。 蚀刻组合物包括至少一种选自H 2 O 2，O 2，O 4 - ，BrO 3，ClO 3，S 2-8 - ，KIO 3，H 5 O 6，KOH和HNO 3的氧化剂，至少一种选自HF，NH 4 OH，H 3 PO 4 ，H 2 SO 4和HCl，以及通过以一定速率混合形成的缓冲溶液。

公开(公告)号：US06232228B1

公开(公告)日：2001-05-15

申请号：US09325389

申请日：1999-06-04

申请人： Gyu-hwan Kwag ,  Se-jong Ko ,  Kyung-seuk Hwang ,  Jun-ing Gil ,  Sang-o Park ,  Dae-hoon Kim ,  Sang-moon Chon ,  Ho-Kyoon Chung

发明人： Gyu-hwan Kwag ,  Se-jong Ko ,  Kyung-seuk Hwang ,  Jun-ing Gil ,  Sang-o Park ,  Dae-hoon Kim ,  Sang-moon Chon ,  Ho-Kyoon Chung

IPC分类号： H01L2144

CPC分类号： C09K13/04 ,  H01L21/3212 ,  H01L21/7684

摘要： A method of manufacturing semiconductor devices is provided, including the formation of a conductive plug and the minimizing of the step-height of an interlayer dielectric layer. An etching composition is also provided for such a manufacturing method. The method of manufacturing semiconductor devices includes the steps of forming an insulating layer over a semiconductor substrate, forming contact holes in the insulating layer, forming a conductive layer over the insulating layer to burying the contact holes, rotating the semiconductor substrate, and etching the conductive layer by supplying an etching composition on the rotating semiconductor substrate, and spin-etching the tungsten layer using an etching composition such that the conductive layer remains only inside the contact holes and does not remain over the insulating layer. The etching composition includes at least one oxidant selected from H2O2, O2, IO4−, BrO3, ClO3, S2O8−, KIO3, H5IO6, KOH and HNO3, at least enhancer selected from HF, NH4OH, H3PO4, H2SO4, NH4F and HCl, and a buffer solution, mixed together in certain amounts.

摘要翻译： 提供一种制造半导体器件的方法，包括形成导电插塞并使层间绝缘层的阶梯高度最小化。 还提供了用于这种制造方法的蚀刻组合物。 制造半导体器件的方法包括以下步骤：在半导体衬底上形成绝缘层，在绝缘层中形成接触孔，在绝缘层上形成导电层以埋入接触孔，旋转半导体衬底，并蚀刻导电 通过在旋转半导体衬底上提供蚀刻组合物，并且使用蚀刻组合物旋转蚀刻钨层，使得导电层仅保留在接触孔内部，并且不保留在绝缘层上。 蚀刻组合物包括至少一种选自H 2 O 2，O 2，O 4 - ，BrO 3，ClO 3，S 2-8 - ，KIO 3，H 5 O 6，KOH和HNO 3的氧化剂，至少选自HF，NH 4 OH，H 3 PO 4，H 2 SO 4，NH 4 F和HCl的增强剂， 缓冲溶液，以一定量混合在一起。

公开(公告)号：US06613693B1

公开(公告)日：2003-09-02

申请号：US09696741

申请日：2000-10-26

申请人： Yong-woo Heo ,  Heoung-bin Lim ,  Jun-ing Gil ,  Eun-mi Bae

发明人： Yong-woo Heo ,  Heoung-bin Lim ,  Jun-ing Gil ,  Eun-mi Bae

IPC分类号： H01L21302

CPC分类号： H01L21/31111

摘要： A nitride film etchant used in the manufacture semiconductor devices, and an etching method using the etchant, are provided. A wafer having a nitride film formed thereon is introduced into a bathing tube containing an etchant which is a water solution containing phosphoric acid (H3PO4) of a concentration of 50-70% by weight and hydrofluoric acid (HF), and the nitride film is etched by the etchant. When the concentration of HF is 0.005 to 0.05% by weight, the etch rate of the nitride film is increased, and the selectivity between the nitride film and an oxide film is kept very high. Also, an etchant containing HF of a concentration of 0.05% by weight is provided as a water solution mixed with H3PO4 and HF. Addition of HF of 0.05% by weight or less increases the etch rate of the nitride film, and a high selectivity of the nitride film with respect to an oxide film is maintained.