公开(公告)号：US06613693B1

公开(公告)日：2003-09-02

申请号：US09696741

申请日：2000-10-26

申请人： Yong-woo Heo ,  Heoung-bin Lim ,  Jun-ing Gil ,  Eun-mi Bae

发明人： Yong-woo Heo ,  Heoung-bin Lim ,  Jun-ing Gil ,  Eun-mi Bae

IPC分类号： H01L21302

CPC分类号： H01L21/31111

摘要： A nitride film etchant used in the manufacture semiconductor devices, and an etching method using the etchant, are provided. A wafer having a nitride film formed thereon is introduced into a bathing tube containing an etchant which is a water solution containing phosphoric acid (H3PO4) of a concentration of 50-70% by weight and hydrofluoric acid (HF), and the nitride film is etched by the etchant. When the concentration of HF is 0.005 to 0.05% by weight, the etch rate of the nitride film is increased, and the selectivity between the nitride film and an oxide film is kept very high. Also, an etchant containing HF of a concentration of 0.05% by weight is provided as a water solution mixed with H3PO4 and HF. Addition of HF of 0.05% by weight or less increases the etch rate of the nitride film, and a high selectivity of the nitride film with respect to an oxide film is maintained.

公开(公告)号：US06960265B2

公开(公告)日：2005-11-01

申请号：US10104094

申请日：2002-03-21

申请人： Yong-Woo Heo ,  June-Ing Gill ,  Mi-Kyoung Lee ,  Hyun-Gi Cho

发明人： Yong-Woo Heo ,  June-Ing Gill ,  Mi-Kyoung Lee ,  Hyun-Gi Cho

IPC分类号： H01L21/02 ,  G01N1/32 ,  G01N1/34 ,  H01L21/00 ,  B08B7/04

CPC分类号： H01L21/67051 ,  G01N1/32 ,  G01N2001/4061 ,  Y10S134/902

摘要： An apparatus and method for automatically collecting metallic impurities of a semiconductor wafer. In one aspect, an apparatus includes an air tight process chamber including a loading unit for loading the semiconductor wafer and unloading unit for unloading the semiconductor wafer; a vapor phase decomposition unit disposed in the process chamber for decomposing a silicon oxide layer on the semiconductor wafer; and a scanning unit disposed in the process chamber for scanning the semiconductor wafer to collect the metallic impurities. The scanning unit includes a scanning solution bottle for obtaining scanning solution that is used for absorbing metallic impurities on the semiconductor wafer; a scanning arm capable of downward, upward, and rotational movement; and a nozzle coupled to the scanning arm for drawing in scanning solution from the scanning solution bottle, and for forming a droplet of scanning solution that cohers to the nozzle when scanning a semiconductor wafer to collect metallic impurities.

摘要翻译： 一种用于自动收集半导体晶片的金属杂质的装置和方法。 一方面，一种装置包括：气密处理室，包括用于装载半导体晶片的装载单元和用于卸载半导体晶片的卸载单元; 设置在所述处理室中用于分解所述半导体晶片上的氧化硅层的气相分解单元; 以及设置在处理室中用于扫描半导体晶片以收集金属杂质的扫描单元。 扫描单元包括用于获得用于吸收半导体晶片上的金属杂质的扫描溶液的扫描溶液瓶; 能够向下，向上和旋转运动的扫描臂; 以及联接到所述扫描臂的喷嘴，用于从所述扫描溶液瓶吸取扫描溶液，并且在扫描半导体晶片以形成金属杂质时，形成与所述喷嘴相邻的扫描溶液液滴。

公开(公告)号：US07081182B2

公开(公告)日：2006-07-25

申请号：US10205621

申请日：2002-07-26

申请人： Jae-Jun Ryu ,  Kyung-Dae Kim ,  June-Ing Gill ,  Yong-Woo Heo

发明人： Jae-Jun Ryu ,  Kyung-Dae Kim ,  June-Ing Gill ,  Yong-Woo Heo

IPC分类号： C23F1/00 ,  H01L21/306

CPC分类号： H01L22/26

摘要： The present invention relates to a method and apparatus for automatically measuring the concentration of total organic carbon (TOC) in chemicals and ultra-pure water that are used in a wet etch process. The apparatus includes a sampling line extending from a processing bath, and a pump, for extracting a fluid sample from the processing bath, a buffer for filtering foreign material or air bubbles from the fluid, and an analyzer for analyzing the concentration of TOC in the fluid.

公开(公告)号：US06398904B1

公开(公告)日：2002-06-04

申请号：US09323014

申请日：1999-06-01

申请人： Yong-woo Heo ,  Heoung-bin Lim

发明人： Yong-woo Heo ,  Heoung-bin Lim

IPC分类号： C23F102

CPC分类号： H01L21/30604 ,  H01L21/31111 ,  H01L21/32134 ,  H01L21/67086

摘要： A wet etching system includes a tank for containing a chemical and having an open top portion, and a heater disposed in the tank for heating the chemical contained therein. A cover is arranged on the open top portion of the tank, and the cover includes a cooling apparatus formed therein. The wet etching method includes placing a semiconductor substrate, having a layer thereon to be etched, into the tank, and then driving the heater to maintain the chemical within a temperature range. Deionized water in the chemical evaporates when the temperature range is greater than a boiling point of the deionized water. The evaporated deionized water condenses on the cooler cover and then flows back into the tank to maintain a constant chemical concentration.

摘要翻译： 湿蚀刻系统包括用于容纳化学品并具有开口顶部的罐，以及设置在罐中用于加热其中所含化学品的加热器。 一个盖子布置在罐的敞开的顶部上，盖子包括形成在其中的冷却装置。 湿式蚀刻方法包括将具有要蚀刻的层的半导体衬底放置到罐中，然后驱动加热器以将化学品保持在温度范围内。 当温度范围大于去离子水的沸点时，化学物质中的去离子水蒸发。 蒸发的去离子水冷凝在冷却器盖上，然后流回罐中以保持恒定的化学品浓度。

公开(公告)号：US06548419B2

公开(公告)日：2003-04-15

申请号：US10050840

申请日：2002-01-18

申请人： Yong-woo Heo ,  Heoung-bin Lim

发明人： Yong-woo Heo ,  Heoung-bin Lim

IPC分类号： B05D100

CPC分类号： H01L21/30604 ,  H01L21/31111 ,  H01L21/32134 ,  H01L21/67086

摘要： A wet etching system includes a tank for containing a chemical and having an open top portion, and a heater disposed in the tank for heating the chemical contained therein. A cover is arranged on the open top portion of the tank, and the cover includes a cooling apparatus formed therein. The wet etching method includes placing a semiconductor substrate, having a layer thereon to be etched, into the tank, and then driving the heater to maintain the chemical within a temperature range. Deionized water in the chemical evaporates when the temperature range is greater than a boiling point of the deionized water. The evaporated deionized water condenses on the cooler cover and then flows back into the tank to maintain a constant chemical concentration.

摘要翻译： 湿蚀刻系统包括用于容纳化学品并具有开口顶部的罐，以及设置在罐中用于加热其中所含化学品的加热器。 一个盖子布置在罐的敞开的顶部上，盖子包括形成在其中的冷却装置。 湿式蚀刻方法包括将具有要蚀刻的层的半导体衬底放置到罐中，然后驱动加热器以将化学品保持在温度范围内。 当温度范围大于去离子水的沸点时，化学物质中的去离子水蒸发。 蒸发的去离子水冷凝在冷却器盖上，然后流回罐中以保持恒定的化学品浓度。