摘要:
A device includes a semiconductor substrate and a gate insulation film lining a trench in an active region of the substrate. A gate electrode pattern is recessed in the trench on the gate insulation film and has an upper surface that has a nonuniform height. A dielectric pattern may be disposed on the gate electrode pattern in the trench.
摘要:
A method of operating an image sensor includes: thermoelectrically cooling a pixel using a thermoelectric element having a thermoelectric-junction integrated to the pixel; and performing a photoelectric conversion operation using the thermoelectric element. An image sensor includes a pixel and a readout circuit. The pixel includes a thermoelectric element having a thermoelectric-junction, and the readout circuit is configured to control the pixel such that the thermoelectric element performs a thermoelectric-cooling operation and a photoelectric conversion operation.
摘要:
A unit pixel of an image sensor is provided. The unit pixel includes a visible light detection layer and an infrared light detection layer disposed on the visible light detection layer. The visible light detection layer includes visible light pixels and color filters configured to detect visible light to output first charges. The infrared light detection layer includes at least one infrared light pixel configured to detect infrared light to output second charges.
摘要:
A method of operating an image sensor includes: thermoelectrically cooling a pixel using a thermoelectric element having a thermoelectric-junction integrated to the pixel; and performing a photoelectric conversion operation using the thermoelectric element. An image sensor includes a pixel and a readout circuit. The pixel includes a thermoelectric element having a thermoelectric-junction, and the readout circuit is configured to control the pixel such that the thermoelectric element performs a thermoelectric-cooling operation and a photoelectric conversion operation.