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37 条记录 (耗时 0.092 秒)

    Image sensors for performing thermal reset, methods thereof, and devices including the same
    1.
    发明授权
    Image sensors for performing thermal reset, methods thereof, and devices including the same 有权
    用于执行热复位的图像传感器，其方法和包括其的装置

    公开(公告)号：US09294702B2

    公开(公告)日：2016-03-22

    申请号：US14074035

    申请日：2013-11-07

    申请人： Tae Yon Lee ,  Jung Kyu Jung ,  Yoon Dong Park ,  Hyun Seok Lee

    发明人： Tae Yon Lee ,  Jung Kyu Jung ,  Yoon Dong Park ,  Hyun Seok Lee

    IPC分类号： H01L27/00 ,  H04N5/378 ,  H04N5/374 ,  H04N5/3745

    CPC分类号： H04N5/378 ,  H01L2924/0002 ,  H04N5/374 ,  H04N5/3745 ,  H01L2924/00

    摘要： A method of operating an image sensor includes: thermoelectrically cooling a pixel using a thermoelectric element having a thermoelectric-junction integrated to the pixel; and performing a photoelectric conversion operation using the thermoelectric element. An image sensor includes a pixel and a readout circuit. The pixel includes a thermoelectric element having a thermoelectric-junction, and the readout circuit is configured to control the pixel such that the thermoelectric element performs a thermoelectric-cooling operation and a photoelectric conversion operation.

    摘要翻译： 操作图像传感器的方法包括：使用具有与像素集成的热电结的热电元件对像素进行热电冷却; 以及使用该热电元件进行光电转换操作。 图像传感器包括像素和读出电路。 像素包括具有热电结的热电元件，并且读出电路被配置为控制像素，使得热电元件执行热电冷却操作和光电转换操作。

    IMAGE-SENSING DEVICES AND METHODS OF OPERATING THE SAME
    5.
    发明申请
    IMAGE-SENSING DEVICES AND METHODS OF OPERATING THE SAME 有权
    图像感测装置及其操作方法

    公开(公告)号：US20130020463A1

    公开(公告)日：2013-01-24

    申请号：US13550838

    申请日：2012-07-17

    申请人： Tae-Yon Lee ,  Yoon-Dong Park ,  Yong-Jei Lee ,  Seoung-Hyun Kim ,  Joo-Yeong Gong ,  Sung-Kwon Hong

    发明人： Tae-Yon Lee ,  Yoon-Dong Park ,  Yong-Jei Lee ,  Seoung-Hyun Kim ,  Joo-Yeong Gong ,  Sung-Kwon Hong

    IPC分类号： G01J1/44

    CPC分类号： H04N5/357 ,  H04N5/3696 ,  H04N5/3745 ,  H04N5/378

    摘要： In a method of operating an image sensor, a noise voltage of a floating diffusion region is sampled after a reset voltage is applied to the floating diffusion region. A storage region, in which a photo-charge is stored, is electrically connected to the floating diffusion region after sampling the noise voltage, and a demodulation voltage of the floating diffusion region is sampled after the storage region and the floating diffusion region are electrically-connected. A voltage is determined based on the noise voltage and the demodulation voltage.

    摘要翻译： 在操作图像传感器的方法中，在对浮动扩散区域施加复位电压之后，对浮动扩散区域的噪声电压进行采样。 在对噪声电压进行采样之后，存储光电荷的存储区域与浮动扩散区域电连接，并且在存储区域和浮动扩散区域电气化之后对浮动扩散区域的解调电压进行采样， 连接的。 基于噪声电压和解调电压确定电压。

    Multi-level phase change random access memory device
    10.
    发明申请
    Multi-level phase change random access memory device 有权
    多级相变随机存取存储器件

    公开(公告)号：US20100012913A1

    公开(公告)日：2010-01-21

    申请号：US12459155

    申请日：2009-06-26

    申请人： Tae-Yon Lee

    发明人： Tae-Yon Lee

    IPC分类号： H01L47/00

    CPC分类号： H01L45/00 ,  G11C11/56 ,  G11C11/5678 ,  G11C13/0004

    摘要： A multi-level phase change random access memory device includes a first electrode, a second electrode, and a phase change material disposed between the first electrode and the second electrode. The multi-level phase change random access memory device also includes a variable bias source coupled to the first electrode. The variable bias source provides a respective bias applied at the first electrode to form a portion of the phase change material to have one of an amorphous state and different crystal states for storing multi-bits data.

    摘要翻译： 多级相变随机存取存储器件包括第一电极，第二电极和设置在第一电极和第二电极之间的相变材料。 多电平相变随机存取存储器件还包括耦合到第一电极的可变偏置源。 可变偏置源提供施加在第一电极处的相应偏置，以形成相变材料的一部分以具有用于存储多位数据的非晶状态和不同晶体状态之一。