公开(公告)号：US08779860B2

公开(公告)日：2014-07-15

申请号：US13586218

申请日：2012-08-15

Applicant: Moon Suk Jeon ,  Jung Rin Woo ,  Sang Hwa Jung ,  Jung Hyun Kim ,  Young Kwon

Inventor： Moon Suk Jeon ,  Jung Rin Woo ,  Sang Hwa Jung ,  Jung Hyun Kim ,  Young Kwon

IPC: H03F1/22

CPC classification number: H03F1/223 ,  H03F1/0222 ,  H03F2200/102 ,  H03F2200/18

Abstract: A power amplifier comprises a common source amplification stage and a first common gate amplification stage. The common source amplification stage includes a common source transistor for receiving a radio frequency (RF) input signal via a gate. The first common gate amplification stage is connected in cascode between a variable supply voltage source and the common source amplification stage, and amplifies an output of the common source amplification stage. The first common gate amplification stage includes a first common gate transistor, and a first gate bias controller configured to generate a first divided voltage based on a variable supply voltage of the variable supply voltage source, and to supply a first gate bias voltage generated by buffering the first divided voltage to a gate of the first common gate transistor.

Abstract translation: 功率放大器包括公共源极放大级和第一公共栅极放大级。 公共源极放大级包括用于经由栅极接收射频（RF）输入信号的公共源极晶体管。 第一公共栅极放大级以可变电源电压源和公共源极放大级之间的级联连接，并放大公共源极放大级的输出。 第一公共栅极放大级包括第一公共栅极晶体管和第一栅极偏置控制器，其被配置为基于可变电源电压源的可变电源电压产生第一分压，并且提供由缓冲产生的第一栅极偏置电压 第一公共栅极晶体管的栅极的第一分压。

公开(公告)号：US20140049322A1

公开(公告)日：2014-02-20

申请号：US13586218

申请日：2012-08-15

Applicant: Moon Suk JEON ,  Jung-Rin WOO ,  Sang Hwa JUNG ,  Jung Hyun KIM ,  Young KWON

Inventor： Moon Suk JEON ,  Jung-Rin WOO ,  Sang Hwa JUNG ,  Jung Hyun KIM ,  Young KWON

IPC: H03G3/30 ,  H03F1/22

CPC classification number: H03F1/223 ,  H03F1/0222 ,  H03F2200/102 ,  H03F2200/18

Abstract: A power amplifier comprises a common source amplification stage and a first common gate amplification stage. The common source amplification stage includes a common source transistor for receiving a radio frequency (RF) input signal via a gate. The first common gate amplification stage is connected in cascode between a variable supply voltage source and the common source amplification stage, and amplifies an output of the common source amplification stage. The first common gate amplification stage includes a first common gate transistor, and a first gate bias controller configured to generate a first divided voltage based on a variable supply voltage of the variable supply voltage source, and to supply a first gate bias voltage generated by buffering the first divided voltage to a gate of the first common gate transistor.

Abstract translation: 功率放大器包括公共源极放大级和第一公共栅极放大级。 公共源极放大级包括用于经由栅极接收射频（RF）输入信号的公共源极晶体管。 第一公共栅极放大级以可变电源电压源和公共源极放大级之间的级联连接，并放大公共源极放大级的输出。 第一公共栅极放大级包括第一公共栅极晶体管和第一栅极偏置控制器，其被配置为基于可变电源电压源的可变电源电压产生第一分压，并且提供由缓冲产生的第一栅极偏置电压 第一公共栅极晶体管的栅极的第一分压。

公开(公告)号：US08692620B2

公开(公告)日：2014-04-08

申请号：US13541049

申请日：2012-07-03

Applicant: Moon Suk Jeon ,  Jung-Rin Woo ,  Sang Hwa Jung ,  Jung Hyun Kim ,  Young Kwon ,  Il Do Jung

Inventor： Moon Suk Jeon ,  Jung-Rin Woo ,  Sang Hwa Jung ,  Jung Hyun Kim ,  Young Kwon ,  Il Do Jung

IPC: H03F3/04

CPC classification number: H03F3/211 ,  H03F1/0211

Abstract: A power amplifier including a MOSFET including a source supplied with a first DC power, a gate connected to an RF input signal, and a drain connected to a power supply terminal of an RF power amplification unit; a supply voltage modulation control unit that determines a DC gate voltage of the MOSFET based on an envelope of the RF input signal; and a bypass circuit connected between the drain and the power supply terminal. The MOSFET outputs a second DC power via the drain and amplifies the RF input signal based on a third DC power substantially identical to a differential between the first and the second DC power, and also outputs an RF power via the drain. The bypass circuit receives and rectifies the RF power to supply a recycled DC power to the power supply terminal of the RF power amplification unit.

Abstract translation: 一种功率放大器，包括：包括提供有第一直流电源的源极的MOSFET，连接到RF输入信号的栅极和连接到RF功率放大单元的电源端子的漏极; 电源电压调制控制单元，其基于RF输入信号的包络确定MOSFET的DC栅极电压; 以及连接在漏极和电源端子之间的旁路电路。 MOSFET通过漏极输出第二直流电源，并且基于与第一和第二直流电力之间的差分基本相同的第三直流功率放大RF输入信号，并且还经由漏极输出RF功率。 旁路电路接收并整流RF功率以将再循环的DC电力提供给RF功率放大单元的电源端子。

公开(公告)号：US20140009232A1

公开(公告)日：2014-01-09

申请号：US13541049

申请日：2012-07-03

Applicant: Moon Suk Jeon ,  Jung-Rin Woo ,  Sang Hwa Jung ,  Jung Hyun Kim ,  Young Kwon ,  Il Do Jung

Inventor： Moon Suk Jeon ,  Jung-Rin Woo ,  Sang Hwa Jung ,  Jung Hyun Kim ,  Young Kwon ,  Il Do Jung

IPC: H03F3/45

CPC classification number: H03F3/211 ,  H03F1/0211

Abstract: A power amplifier including a MOSFET including a source supplied with a first DC power, a gate connected to an RF input signal, and a drain connected to a power supply terminal of an RF power amplification unit; a supply voltage modulation control unit that determines a DC gate voltage of the MOSFET based on an envelope of the RF input signal; and a bypass circuit connected between the drain and the power supply terminal. The MOSFET outputs a second DC power via the drain and amplifies the RF input signal based on a third DC power substantially identical to a differential between the first and the second DC power, and also outputs an RF power via the drain. The bypass circuit receives and rectifies the RF power to supply a recycled DC power to the power supply terminal of the RF power amplification unit.

Abstract translation: 一种功率放大器，包括：包括提供有第一直流电源的源极的MOSFET，连接到RF输入信号的栅极和连接到RF功率放大单元的电源端子的漏极; 电源电压调制控制单元，其基于RF输入信号的包络确定MOSFET的DC栅极电压; 以及连接在漏极和电源端子之间的旁路电路。 MOSFET通过漏极输出第二直流电源，并且基于与第一和第二直流电力之间的差分基本相同的第三直流功率放大RF输入信号，并且还经由漏极输出RF功率。 旁路电路接收并整流RF功率以将再循环的DC电力提供给RF功率放大单元的电源端子。

公开(公告)号：US08680928B2

公开(公告)日：2014-03-25

申请号：US13433957

申请日：2012-03-29

Applicant: Moon Suk Jeon ,  Jung-Rin Woo ,  Sang Hwa Jung ,  Young Kwon

Inventor： Moon Suk Jeon ,  Jung-Rin Woo ,  Sang Hwa Jung ,  Young Kwon

IPC: H03F1/22

CPC classification number: H03F1/223 ,  H03F1/3205 ,  H03F3/193 ,  H03F2200/61

Abstract: A power amplifier includes first and second amplification stages. The first amplification stage is configured to amplify a radio frequency (RF) input signal. The second amplification stage includes at least one transistor configured to amplify an output of the first amplification stage, the second amplification stage being configured to have a capacitance between a gate of the at least one transistor and a first power supply voltage. The capacitance automatically varies with amplitude of the output of the first amplification stage.

Abstract translation: 功率放大器包括第一和第二放大级。 第一放大级被配置为放大射频（RF）输入信号。 第二放大级包括被配置为放大第一放大级的输出的至少一个晶体管，第二放大级被配置为具有至少一个晶体管的栅极与第一电源电压之间的电容。 电容随着第一放大级的输出的幅度而自动变化。

公开(公告)号：US20130257545A1

公开(公告)日：2013-10-03

申请号：US13433957

申请日：2012-03-29

Applicant: Moon Suk Jeon ,  Jung-Rin Woo ,  Sang Hwa Jung ,  Young Kwon

Inventor： Moon Suk Jeon ,  Jung-Rin Woo ,  Sang Hwa Jung ,  Young Kwon

IPC: H03F3/68 ,  H03F1/22

CPC classification number: H03F1/223 ,  H03F1/3205 ,  H03F3/193 ,  H03F2200/61

Abstract: A power amplifier includes first and second amplification stages. The first amplification stage is configured to amplify a radio frequency (RF) input signal. The second amplification stage includes at least one transistor configured to amplify an output of the first amplification stage, the second amplification stage being configured to have a capacitance between a gate of the at least one transistor and a first power supply voltage. The capacitance automatically varies with amplitude of the output of the first amplification stage.

Abstract translation: 功率放大器包括第一和第二放大级。 第一放大级被配置为放大射频（RF）输入信号。 第二放大级包括被配置为放大第一放大级的输出的至少一个晶体管，第二放大级被配置为具有至少一个晶体管的栅极与第一电源电压之间的电容。 电容随着第一放大级的输出的幅度而自动变化。