公开(公告)号：US20080093388A1

公开(公告)日：2008-04-24

申请号：US11427147

申请日：2006-06-28

Applicant: Justin K. Markunas

Inventor： Justin K. Markunas

IPC: G01F11/00

CPC classification number: G01F11/023 ,  G01F15/068

Abstract: An attachment provides automatic control to a repetitive syringe drip dispenser. The dispenser has a push button which when pushed causes a shaft inside the body of the dispenser to travel a precisely-controlled distance thereby pushing the piston of a syringe and dispensing a controlled amount of liquid. The attachment includes a push-type solenoid disposed within the body of the attachment and having a plunger adapted to lie directly over the push button. The attachment further includes a logic circuit comprising timer, counter, and relay integrated circuits connected to the solenoid for feeding power to the solenoid from an external power source, a plurality of push buttons connected to the logic circuit for setting the rate and number of times the push button of the dispenser is to be pushed by the solenoid, and a plurality of light emitting diodes connected to the logic circuit for displaying the set values.

Abstract translation: 附件为重复注射器滴注机提供自动控制。 分配器具有按钮，当按压时，使得分配器主体内的轴行进精确控制的距离，从而推动注射器的活塞并分配受控量的液体。 附件包括设置在附件的主体内的推式螺线管，并且具有适于直接位于按钮上方的柱塞。 该附件还包括逻辑电路，其包括连接到螺线管的定时器，计数器和继电器集成电路，用于从外部电源向螺线管供电，连接到逻辑电路的多个按钮用于设定速率和次数 分配器的按钮被螺线管推动，并且连接到逻辑电路的多个发光二极管用于显示设定值。

公开(公告)号：US08456004B2

公开(公告)日：2013-06-04

申请号：US13414781

申请日：2012-03-08

Applicant: Justin K. Markunas ,  Eric F. Schulte

Inventor： Justin K. Markunas ,  Eric F. Schulte

IPC: H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC classification number: H01L21/76885 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/742 ,  H01L2224/11003 ,  H01L2224/111 ,  H01L2224/11334 ,  H01L2224/13109 ,  H01L2224/16148 ,  H01L2224/742 ,  H01L2224/81203 ,  H01L2924/00013 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01019 ,  H01L2924/01027 ,  H01L2924/01033 ,  H01L2924/01049 ,  H01L2924/01072 ,  H01L2924/01078 ,  H01L2924/14 ,  H01L2924/01204 ,  H01L2224/13099 ,  H01L2224/05099 ,  H01L2224/13599 ,  H01L2224/05599 ,  H01L2224/29099 ,  H01L2224/29599

Abstract: A process is disclosed for high density indium bumping of microchips by using an innovative template wafer upon which the bumps are initially fabricated. Once fabricated, these bumps are transferred to the microchip, after which can be hybridized to another microchip. Such a template wafer is reusable, and thus provides an economical way to fabricate indium bumps. Reusability also eliminates nonuniformities in bump shape and size in serial processing of separate microchips, which is not the case for other indium bump fabrication processes. Such a fabrication process provides a way to form relatively tall indium bumps and accomplishes this without the standard thick photoresist liftoff process. The described process can be suitable for bump pitches under 10 microns, and is only limited by the resolution of the photolithography equipment used.

Abstract translation: 公开了一种通过使用最初制造凸起的创新模板晶片来实现微芯片的高密度铟凸起的工艺。 一旦制造，这些凸块被转移到微芯片，之后可以与另一个微芯片杂交。 这样的模板晶片是可重复使用的，因此提供了制造铟凸块的经济方法。 可再利用性还消除了单独的微芯片的串联处理中的凸起形状和尺寸的不均匀性，对于其它铟凸块制造工艺不是这种情况。 这种制造工艺提供了形成相对较高的铟凸块的方法，并且在没有标准的厚光致抗蚀剂剥离工艺的情况下实现了这一点。 所描述的工艺可适用于10微米以下的凸起间距，并且仅受所使用的光刻设备的分辨率的限制。

公开(公告)号：US20120161314A1

公开(公告)日：2012-06-28

申请号：US13414781

申请日：2012-03-08

Applicant: Justin K. Markunas ,  Eric F. Schulte

Inventor： Justin K. Markunas ,  Eric F. Schulte

IPC: H01L23/498 ,  H01L21/768

CPC classification number: H01L21/76885 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/742 ,  H01L2224/11003 ,  H01L2224/111 ,  H01L2224/11334 ,  H01L2224/13109 ,  H01L2224/16148 ,  H01L2224/742 ,  H01L2224/81203 ,  H01L2924/00013 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01019 ,  H01L2924/01027 ,  H01L2924/01033 ,  H01L2924/01049 ,  H01L2924/01072 ,  H01L2924/01078 ,  H01L2924/14 ,  H01L2924/01204 ,  H01L2224/13099 ,  H01L2224/05099 ,  H01L2224/13599 ,  H01L2224/05599 ,  H01L2224/29099 ,  H01L2224/29599

Abstract: A process is disclosed for high density indium bumping of microchips by using an innovative template wafer upon which the bumps are initially fabricated. Once fabricated, these bumps are transferred to the microchip, after which can be hybridized to another microchip. Such a template wafer is reusable, and thus provides an economical way to fabricate indium bumps. Reusability also eliminates nonuniformities in bump shape and size in serial processing of separate microchips, which is not the case for other indium bump fabrication processes. Such a fabrication process provides a way to form relatively tall indium bumps and accomplishes this without the standard thick photoresist liftoff process. The described process can be suitable for bump pitches under 10 microns, and is only limited by the resolution of the photolithography equipment used.

Abstract translation: 公开了一种通过使用最初制造凸起的创新模板晶片来实现微芯片的高密度铟凸起的工艺。 一旦制造，这些凸块被转移到微芯片，之后可以与另一个微芯片杂交。 这样的模板晶片是可重复使用的，因此提供了制造铟凸块的经济方法。 可再利用性还消除了单独的微芯片的串联处理中的凸起形状和尺寸的不均匀性，对于其它铟凸块制造工艺不是这种情况。 这种制造工艺提供了形成相对较高的铟凸块的方法，并且在没有标准的厚光致抗蚀剂剥离工艺的情况下实现了这一点。 所描述的工艺可适用于10微米以下的凸起间距，并且仅受所使用的光刻设备的分辨率的限制。

公开(公告)号：US20110079894A1

公开(公告)日：2011-04-07

申请号：US12571812

申请日：2009-10-01

Applicant: Justin K. Markunas ,  Eric F. Schulte

Inventor： Justin K. Markunas ,  Eric F. Schulte

IPC: H01L23/48 ,  H01L21/60

CPC classification number: H01L21/76885 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/742 ,  H01L2224/11003 ,  H01L2224/111 ,  H01L2224/11334 ,  H01L2224/13109 ,  H01L2224/16148 ,  H01L2224/742 ,  H01L2224/81203 ,  H01L2924/00013 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01019 ,  H01L2924/01027 ,  H01L2924/01033 ,  H01L2924/01049 ,  H01L2924/01072 ,  H01L2924/01078 ,  H01L2924/14 ,  H01L2924/01204 ,  H01L2224/13099 ,  H01L2224/05099 ,  H01L2224/13599 ,  H01L2224/05599 ,  H01L2224/29099 ,  H01L2224/29599

Abstract: A process is disclosed for high density indium bumping of microchips by using an innovative template wafer upon which the bumps are initially fabricated. Once fabricated, these bumps are transferred to the microchip, after which can be hybridized to another microchip. Such a template wafer is reusable, and thus provides an economical way to fabricate indium bumps. Reusability also eliminates nonuniformities in bump shape and size in serial processing of separate microchips, which is not the case for other indium bump fabrication processes. Such a fabrication process provides a way to form relatively tall indium bumps and accomplishes this without the standard thick photoresist liftoff process. The described process can be suitable for bump pitches under 10 microns, and is only limited by the resolution of the photolithography equipment used.

Abstract translation: 公开了一种通过使用最初制造凸起的创新模板晶片来实现微芯片的高密度铟凸起的工艺。 一旦制造，这些凸块被转移到微芯片，之后可以与另一个微芯片杂交。 这样的模板晶片是可重复使用的，因此提供了制造铟凸块的经济方法。 可再利用性还消除了单独的微芯片的串联处理中的凸起形状和尺寸的不均匀性，对于其它铟凸块制造工艺不是这种情况。 这种制造工艺提供了形成相对较高的铟凸块的方法，并且在没有标准的厚光致抗蚀剂剥离工艺的情况下实现了这一点。 所描述的工艺可适用于10微米以下的凸起间距，并且仅受所使用的光刻设备的分辨率的限制。

公开(公告)号：US08163644B2

公开(公告)日：2012-04-24

申请号：US12571812

申请日：2009-10-01

Applicant: Justin K. Markunas ,  Eric F. Schulte

Inventor： Justin K. Markunas ,  Eric F. Schulte

IPC: H01L21/44

CPC classification number: H01L21/76885 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/742 ,  H01L2224/11003 ,  H01L2224/111 ,  H01L2224/11334 ,  H01L2224/13109 ,  H01L2224/16148 ,  H01L2224/742 ,  H01L2224/81203 ,  H01L2924/00013 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01019 ,  H01L2924/01027 ,  H01L2924/01033 ,  H01L2924/01049 ,  H01L2924/01072 ,  H01L2924/01078 ,  H01L2924/14 ,  H01L2924/01204 ,  H01L2224/13099 ,  H01L2224/05099 ,  H01L2224/13599 ,  H01L2224/05599 ,  H01L2224/29099 ,  H01L2224/29599

Abstract: A process is disclosed for high density indium bumping of microchips by using an innovative template wafer upon which the bumps are initially fabricated. Once fabricated, these bumps are transferred to the microchip, after which can be hybridized to another microchip. Such a template wafer is reusable, and thus provides an economical way to fabricate indium bumps. Reusability also eliminates nonuniformities in bump shape and size in serial processing of separate microchips, which is not the case for other indium bump fabrication processes. Such a fabrication process provides a way to form relatively tall indium bumps and accomplishes this without the standard thick photoresist liftoff process. The described process can be suitable for bump pitches under 10 microns, and is only limited by the resolution of the photolithography equipment used.

Abstract translation: 公开了一种通过使用最初制造凸起的创新模板晶片来实现微芯片的高密度铟凸起的工艺。 一旦制造，这些凸块被转移到微芯片，之后可以与另一个微芯片杂交。 这样的模板晶片是可重复使用的，因此提供了制造铟凸块的经济方法。 可再利用性还消除了单独的微芯片的串联处理中的凸起形状和尺寸的不均匀性，对于其它铟凸块制造工艺不是这种情况。 这种制造工艺提供了形成相对较高的铟凸块的方法，并且在没有标准的厚光致抗蚀剂剥离工艺的情况下实现了这一点。 所描述的工艺可适用于10微米以下的凸起间距，并且仅受所使用的光刻设备的分辨率的限制。