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公开(公告)号:US12046541B2
公开(公告)日:2024-07-23
申请号:US18301807
申请日:2023-04-17
申请人: ROHM CO., LTD.
发明人: Katsuhiro Iwai
IPC分类号: H01L23/495 , H01L23/00 , H01L23/31
CPC分类号: H01L23/49548 , H01L23/3107 , H01L23/3121 , H01L23/3142 , H01L23/4952 , H01L23/49541 , H01L23/49551 , H01L23/49582 , H01L23/562 , H01L24/06 , H01L24/32 , H01L24/48 , H01L24/49 , H01L24/73 , H01L2224/04026 , H01L2224/04042 , H01L2224/0603 , H01L2224/06181 , H01L2224/32245 , H01L2224/48247 , H01L2224/48465 , H01L2224/49111 , H01L2224/49113 , H01L2224/49431 , H01L2224/73265 , H01L2924/00014 , H01L2924/181 , H01L2924/18301 , H01L2924/3512 , H01L2924/181 , H01L2924/00012 , H01L2224/73265 , H01L2224/32245 , H01L2224/48247 , H01L2924/00012 , H01L2924/00014 , H01L2224/45099 , H01L2224/48465 , H01L2224/48247 , H01L2924/00012 , H01L2924/00014 , H01L2224/05599 , H01L2924/00014 , H01L2224/29099 , H01L2224/48465 , H01L2224/48247 , H01L2924/00
摘要: A semiconductor device includes a plurality of leads, a semiconductor element electrically connected to the leads and supported by one of the leads, and a sealing resin covering the semiconductor element and a part of each lead. The sealing resin includes a first edge, a second edge perpendicular to the first edge, and a center line parallel to the first edge. The reverse surfaces of the respective leads include parts exposed from the sealing resin, and the exposed parts include an outer reverse-surface mount portion and an inner reverse-surface mount portion that are disposed along the second edge of the sealing resin. The inner reverse-surface mount portion is closer to the center line of the sealing resin than is the outer reverse-surface mount portion. The outer reverse-surface mount portion is greater in area than the inner reverse-surface mount portion.
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公开(公告)号:US11942581B2
公开(公告)日:2024-03-26
申请号:US17902035
申请日:2022-09-02
发明人: David Clark , Curtis Zwenger
CPC分类号: H01L33/58 , H01L21/563 , H01L21/6835 , H01L24/00 , H01L33/44 , H01L24/16 , H01L24/32 , H01L24/73 , H01L24/92 , H01L33/62 , H01L2221/68345 , H01L2224/13101 , H01L2224/16225 , H01L2224/73204 , H01L2224/73253 , H01L2224/81005 , H01L2224/81203 , H01L2224/81224 , H01L2224/81815 , H01L2224/92125 , H01L2924/00014 , H01L2924/15311 , H01L2924/18161 , H01L2924/3511 , H01L2224/73204 , H01L2224/32225 , H01L2224/16225 , H01L2924/00012 , H01L2224/81815 , H01L2924/00014 , H01L2224/81224 , H01L2924/00014 , H01L2224/13101 , H01L2924/014 , H01L2924/00014 , H01L2224/81203 , H01L2924/00014 , H01L2924/3511 , H01L2924/00012 , H01L2924/00014 , H01L2224/29099 , H01L2924/15311 , H01L2224/73204 , H01L2224/16225 , H01L2224/32225 , H01L2924/00012
摘要: A method for manufacturing a semiconductor device and a semiconductor device produced thereby. For example and without limitation, various aspects of this disclosure provide a method for manufacturing a semiconductor device, and a semiconductor device produced thereby, that that comprises a transparent, translucent, non-opaque, or otherwise optically-transmissive, external surface.
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公开(公告)号:US20190244928A1
公开(公告)日:2019-08-08
申请号:US16387958
申请日:2019-04-18
CPC分类号: H01L24/97 , H01L21/02021 , H01L21/4821 , H01L21/4828 , H01L21/561 , H01L21/78 , H01L23/3107 , H01L23/4952 , H01L23/49541 , H01L23/49548 , H01L23/49582 , H01L24/05 , H01L24/32 , H01L24/48 , H01L24/49 , H01L24/73 , H01L2224/0401 , H01L2224/05553 , H01L2224/05599 , H01L2224/16245 , H01L2224/32245 , H01L2224/48091 , H01L2224/48247 , H01L2224/49171 , H01L2224/73265 , H01L2224/97 , H01L2924/00014 , H01L2924/10161 , H01L2924/19107 , H01L2924/00012 , H01L2224/45099 , H01L2224/29099
摘要: Methods of forming a semiconductor package. Implementations include providing a leadframe, coupling a semiconductor die or an electronic component to the leadframe, and encapsulating at least a portion of the semiconductor die or the electronic component using a mold compound leaving two or more leads of the leadframe exposed. The method may also include coating the two or more leads of the leadframe with an electrically conductive layer. The method may include fully electrically and physically singulating one or more tie bars between two or more leads of the leadframe, a lead of the two or more leads and a leadframe flag, or any combination thereof. The method may also include singulating the leadframe to form one or more semiconductor packages.
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公开(公告)号:US20190237385A1
公开(公告)日:2019-08-01
申请号:US16380197
申请日:2019-04-10
发明人: CHIN-LIANG CHEN , CHI-YANG YU , KUAN-LIN HO , YU-MIN LIANG
IPC分类号: H01L23/373 , H01L21/683 , H01L21/56 , H01L23/00 , H01L21/78 , H01L23/31 , H01L23/36 , H01L21/48
CPC分类号: H01L23/3736 , H01L21/4846 , H01L21/561 , H01L21/563 , H01L21/565 , H01L21/6835 , H01L21/78 , H01L23/147 , H01L23/3128 , H01L23/36 , H01L23/3731 , H01L23/49816 , H01L23/5383 , H01L24/16 , H01L24/32 , H01L24/73 , H01L24/83 , H01L24/97 , H01L2221/68327 , H01L2221/68359 , H01L2224/131 , H01L2224/13147 , H01L2224/16225 , H01L2224/16238 , H01L2224/29099 , H01L2224/32225 , H01L2224/32245 , H01L2224/73204 , H01L2224/73253 , H01L2224/97 , H01L2924/18161 , H01L2924/3511 , H01L2924/00014 , H01L2924/0105 , H01L2224/81 , H01L2924/014 , H01L2924/00
摘要: A method for manufacturing a semiconductor structure is disclosed. The method includes: providing a semiconductor substrate having a plurality of dies thereon; dispensing an underfill material and a molding compound to fill spaces beneath and between the dies; disposing a temporary carrier over the dies; thinning a thickness of the semiconductor substrate; performing back side metallization upon the thinned semiconductor substrate; removing the temporary carrier; and attaching a plate over the dies. An associated semiconductor structure is also disclosed.
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公开(公告)号:US10062608B2
公开(公告)日:2018-08-28
申请号:US15584226
申请日:2017-05-02
发明人: Salman Akram , James M. Wark , William Mark Hiatt
IPC分类号: H01L21/768 , C23C18/18 , C23C18/16 , H01L21/288 , C23C18/34 , C23C18/36
CPC分类号: H01L21/76879 , C23C18/1607 , C23C18/1637 , C23C18/1831 , C23C18/1834 , C23C18/34 , C23C18/36 , H01L21/288 , H01L21/76898 , H01L2924/00013 , Y10T428/12528 , Y10T428/24917 , H01L2224/29099
摘要: A method of activating a metal structure on an intermediate semiconductor device structure toward metal plating. The method comprises providing an intermediate semiconductor device structure comprising at least one first metal structure and at least one second metal structure on a semiconductor substrate. The at least one first metal structure comprises at least one aluminum structure, at least one copper structure, or at least one structure comprising a mixture of aluminum and copper and the at least one second metal structure comprises at least one tungsten structure. One of the at least one first metal structure and the at least one second metal structure is activated toward metal plating without activating the other of the at least one first metal structure and the at least one second metal structure. An intermediate semiconductor device structure is also disclosed.
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公开(公告)号:US20180240748A1
公开(公告)日:2018-08-23
申请号:US15961973
申请日:2018-04-25
发明人: Chu-Chin Hu , Shih-Ping Hsu , Che-Wei Hsu , Chin-Ming Liu , Chih-Kuai Yang
IPC分类号: H01L23/498 , H01L21/48 , H01L21/683 , H05K1/02 , H05K1/18 , H05K1/11 , H01L23/00 , H01L23/31
CPC分类号: H01L23/49838 , H01L21/4853 , H01L21/486 , H01L21/6835 , H01L23/145 , H01L23/3128 , H01L23/49811 , H01L23/49816 , H01L23/49822 , H01L23/49827 , H01L24/16 , H01L24/17 , H01L24/32 , H01L24/73 , H01L2221/68345 , H01L2221/68359 , H01L2224/13101 , H01L2224/16238 , H01L2224/32225 , H01L2224/73204 , H01L2224/83385 , H01L2924/00014 , H01L2924/01022 , H01L2924/01028 , H01L2924/01079 , H01L2924/0665 , H01L2924/07025 , H01L2924/15311 , H01L2924/15738 , H01L2924/15747 , H01L2924/15763 , H01L2924/1579 , H01L2924/181 , H01L2924/19041 , H01L2924/19042 , H01L2924/19043 , H01L2924/19105 , H05K1/0284 , H05K1/0298 , H05K1/111 , H05K1/181 , H05K2201/0367 , H01L2224/16225 , H01L2924/00012 , H01L2924/014 , H01L2224/29099
摘要: A packaging substrate is provided, which includes: an insulating layer; a plurality of conductive bumps formed on the insulating layer, wherein each of the conductive bumps has a post body exposed from the insulating layer and a conductive pad embedded in the insulating layer, the post body being integrally formed with and less in width than the conductive pad; and a plurality of conductive posts disposed on the conductive pads and embedded in the insulating layer. As such, a semiconductor chip can be bonded to the packaging substrate through the conductive bumps. The present disclosure further provides a method for fabricating the packaging substrate.
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公开(公告)号:US20180226321A1
公开(公告)日:2018-08-09
申请号:US15943047
申请日:2018-04-02
发明人: CHIN-LIANG CHEN , CHI-YANG YU , KUAN-LIN HO , YU-MIN LIANG
IPC分类号: H01L23/373 , H01L21/56 , H01L21/78 , H01L23/00 , H01L21/683
CPC分类号: H01L23/3736 , H01L21/4846 , H01L21/561 , H01L21/563 , H01L21/565 , H01L21/6835 , H01L21/78 , H01L23/3128 , H01L23/36 , H01L23/3731 , H01L24/16 , H01L24/32 , H01L24/73 , H01L24/83 , H01L24/97 , H01L2221/68327 , H01L2221/68359 , H01L2224/131 , H01L2224/13147 , H01L2224/16225 , H01L2224/16238 , H01L2224/29099 , H01L2224/32225 , H01L2224/32245 , H01L2224/73204 , H01L2224/73253 , H01L2224/97 , H01L2924/18161 , H01L2924/3511 , H01L2924/00014 , H01L2924/0105 , H01L2224/81 , H01L2924/014 , H01L2924/00
摘要: A method for manufacturing a semiconductor structure is disclosed. The method includes: providing a semiconductor substrate having a plurality of dies thereon; dispensing an underfill material and a molding compound to fill spaces beneath and between the dies; disposing a temporary carrier over the dies; thinning a thickness of the semiconductor substrate; performing back side metallization upon the thinned semiconductor substrate; removing the temporary carrier; and attaching a plate over the dies. An associated semiconductor structure is also disclosed.
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公开(公告)号:US20180226320A1
公开(公告)日:2018-08-09
申请号:US15429024
申请日:2017-02-09
发明人: Ian HU , Jia-Rung HO , Jin-Feng YANG , Chih-Pin HUNG , Ping-Feng YANG
IPC分类号: H01L23/373 , H01L23/367 , H01L23/31 , H01L23/04 , H01L23/00
CPC分类号: H01L24/48 , H01L23/04 , H01L23/3121 , H01L23/3135 , H01L23/3142 , H01L23/367 , H01L23/373 , H01L24/13 , H01L24/16 , H01L24/32 , H01L24/73 , H01L2224/131 , H01L2224/13101 , H01L2224/16225 , H01L2224/16227 , H01L2224/32225 , H01L2224/48091 , H01L2224/48106 , H01L2224/48227 , H01L2224/48228 , H01L2224/49175 , H01L2224/49431 , H01L2224/49433 , H01L2224/73204 , H01L2224/73265 , H01L2224/83493 , H01L2224/8592 , H01L2224/92125 , H01L2924/00014 , H01L2924/15321 , H01L2924/16195 , H01L2924/181 , H01L2924/00 , H01L2924/00012 , H01L2224/45099 , H01L2924/014 , H01L2224/29099
摘要: A semiconductor package includes a substrate, a semiconductor chip and a heat dissipation structure. The semiconductor chip includes a first surface, a second surface opposite to the first surface, and at least one chip pad disposed adjacent to the first surface. The chip pad is electrically connected to the substrate. The heat dissipation structure is disposed adjacent to the second surface of the semiconductor chip and a portion of the substrate. An area of the heat dissipation structure is greater than an area of the semiconductor chip.
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公开(公告)号:US10002851B2
公开(公告)日:2018-06-19
申请号:US15248435
申请日:2016-08-26
申请人: SK hynix Inc.
发明人: Ki Yong Lee , Sang Hwan Kim , Hyung Ju Choi
IPC分类号: H01L23/48 , H01L25/065 , H01L21/105 , H01L25/18 , H01L23/00
CPC分类号: H01L25/0657 , H01L21/105 , H01L23/49816 , H01L23/5383 , H01L24/05 , H01L24/06 , H01L24/48 , H01L24/49 , H01L25/065 , H01L25/0652 , H01L25/18 , H01L2224/04042 , H01L2224/05554 , H01L2224/0612 , H01L2224/32145 , H01L2224/48091 , H01L2224/48145 , H01L2224/48227 , H01L2224/49109 , H01L2224/73265 , H01L2225/06506 , H01L2225/0651 , H01L2225/0652 , H01L2225/06548 , H01L2225/06562 , H01L2924/00014 , H01L2924/1431 , H01L2924/1433 , H01L2924/1434 , H01L2924/1436 , H01L2924/1437 , H01L2924/15311 , H01L2924/00012 , H01L2224/32225 , H01L2224/45099 , H01L2224/29099 , H01L2224/05599
摘要: A semiconductor package includes a package substrate and semiconductor chips stacked on the package substrate. The package substrate may include at least one first chip enablement finger, at least one second chip enablement finger, and a chip enablement pad selection finger. Each of the semiconductor chips includes a first chip enablement pad connected to the at least one first chip enablement finger, a second chip enablement pad connected to the at least one second chip enablement finger, and a chip enablement pad selection pad connected to the chip enablement pad selection finger. The first chip enablement pads of the semiconductor chips or the second chip enablement pads of the semiconductor chips are optionally activated by a signal applied to the chip enablement pad selection finger.
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公开(公告)号:US09997485B2
公开(公告)日:2018-06-12
申请号:US15663802
申请日:2017-07-30
发明人: Shutesh Krishnan , Yun Sung Won
IPC分类号: H01L23/00 , H01L23/495
CPC分类号: H01L24/27 , H01L23/49513 , H01L23/49524 , H01L24/29 , H01L24/36 , H01L24/40 , H01L24/48 , H01L24/73 , H01L24/83 , H01L2224/16225 , H01L2224/27318 , H01L2224/27334 , H01L2224/29 , H01L2224/29006 , H01L2224/29101 , H01L2224/29199 , H01L2224/2929 , H01L2224/29299 , H01L2224/293 , H01L2224/32013 , H01L2224/32145 , H01L2224/32225 , H01L2224/32245 , H01L2224/33181 , H01L2224/40245 , H01L2224/48091 , H01L2224/48227 , H01L2224/48235 , H01L2224/48247 , H01L2224/73263 , H01L2224/73265 , H01L2224/83048 , H01L2224/83101 , H01L2224/83192 , H01L2224/83203 , H01L2224/838 , H01L2224/8384 , H01L2224/92 , H01L2224/92247 , H01L2924/00013 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01024 , H01L2924/01025 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01051 , H01L2924/01057 , H01L2924/01058 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/14 , H01L2924/15311 , H01L2924/15747 , H01L2924/15787 , H01L2924/181 , H01L2924/19105 , H01L2924/351 , H01L2224/45099 , H01L2924/00012 , H01L2924/00 , H01L2224/29099 , H01L2224/37099
摘要: A bonding structure and a method for bonding components, wherein the bonding structure includes a nanoparticle preform. In accordance with embodiments, the nanoparticle preform is placed on a substrate and a workpiece is placed on the nanoparticle preform.
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